微波双向智能放大器的设计与研究
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摘要
本文研制了一个可应用在2.4GHz-2.5GHZ遵守IEEE802.11b／g协议的无线局域网微波双向智能放大器，其中包含了检波器，功率放大器，低噪声放大器，射频开关，压控衰减器以及功率控制电路，以期延伸AP(Access Point)及无线局域网的应用范围。功率控制电路用来控制功率放大器工作在线性动态范围之内，并保持恒定输出功率为27dBm，同时控制电路还要自动控制开关切换到发射或接收支路。功率放大部分采用RF2126和RF2128P功率放大器芯片组成两级放大，放大后输出功率≥27dBm。低噪声放大器的设计是本文的重点，本文采用ATF-35143和AT-30511进行两级低噪声放大器的设计，增益将≥20dB，噪声系数1.3dB。发射部分启动电平≥10dBm，扣除切换开关损耗，输出功率约27dBm，接收支路整体增益约17dB，噪声系数≤3.5dB。
A microwave bidirectional smart amplifier applied for wireless local area network of IEEE802. 11b/g agreement in the frequency of 2. 4GHz to 2. 5GHz is designed, fabricated and measured in this thesis. This smart amplifier includes detector, power amplifier, low noise amplifier, voltage-controlled attenuator and power-controlled circuit, to extend Access Point and enlarge application area of wireless local area network. The power-controlled circuit is used to control linear dynamic range of the power amplifier, and keep stable output power 27dBm.
The power-controlled circuit controls the circuit and at the same time it controls the switches to transmitting circuit or receiving circuit automatically. The power amplification part is made up of RF2126 and RF2128P power amplifier IC and the output power is larger than 27dBm after being enlarged. The design of low noise amplifier is the keystone of this thesis, ATF-35143 and AT-30511 are used for two stage low noise amplifier, and the gain is larger than 20dB, noise figure is 1.3dB. The startup voltage of transmitting circuit is larger than 10dBm, after the switch loss is deducted, the output power is about 27dBm, the whole gain of the receiving circuit is about 17dB and the noise figure is smaller than 3. 5dB.
A microwave bidirectional smart amplifier applied for wireless local area network of IEEE802. 11b/g agreement in the frequency of 2. 4GHz to 2. 5GHz is designed, fabricated and measured in this thesis. This smart amplifier includes detector, power amplifier, low noise amplifier, voltage-controlled attenuator and power-controlled circuit, to extend Access Point and enlarge application area of wireless local area network. The power-controlled circuit is used to control linear dynamic range of the power amplifier, and keep stable output power 27dBm.
The power-controlled circuit controls the circuit and at the same time it controls the switches to transmitting circuit or receiving circuit automatically. The power amplification part is made up of RF2126 and RF2128P power amplifier IC and the output power is larger than 27dBm after being enlarged. The design of low noise amplifier is the keystone of this thesis, ATF-35143 and AT-30511 are used for two stage low noise amplifier, and the gain is larger than 20dB, noise figure is 1.3dB. The startup voltage of transmitting circuit is larger than 10dBm, after the switch loss is deducted, the output power is about 27dBm, the whole gain of the receiving circuit is about 17dB and the noise figure is smaller than 3. 5dB.
引文
1 W.A. Davis, Microwave Semiconductor Circuit Design, Van Nostrand Reinhold Company, New York, 1984.
2 N. Dye and H. Granberg, Radio Frequency Transistors: Principles and Practical Applications, But-terworth-Heinemann, 1993.
3 G. Gonzalez, Microwave Transistor Amplifiers: Analysis and Design, Prentice Hall, Upper Saddle River, NJ, 1997.
4 P. Horowitz and W. Hill, The Art of Electronics, Cambridge University Press, Cambridge, UK, 1993.
5 D. Pozar, Microwave Engineering, John Wiley & Sons, New York, 1998.
6 P. Rizzi, Microwave Engineering: Passive Circuit, Prentice Hall, Englewood Cliffs, NJ, 1998.
7 I. Bahil and P. Bhartia, Microwave Solid State Circuit Design, John Wiley, New York, 1998.
8 G. Gonzales, Microwave Transistor Amplifiers: Analysis and Design, 2nd ed., Prentice Hall, UpperSaddle River, NJ, 1997.
9 D. Pozar, Microwave Engineering, 2nd ed, Wiley and Sons, New York, 1998.
10 Paul R. Gray and Robert G. Meyer, Analysis and Design of Analog Integrated Circuits, 3rd ed. Chapter 11, Wiley, 1993.
11 Robert G. Meyer and William D. Mack, "Al-GHz BiCMOS RF Front-End IC," IEEE J. Solid-State Circuits, vol. 29, pp. 350-355, March, 1994.
12 Derek K. Shaeffer and Thomas H. Lee, "A 1.5-V 1.5-GHz CMOS Low Noise Amplifier," IEEE J. Solid-State Circuits, vol. 32, pp. 745-759, May, 1997.
13 Yannis E. Papananos, Radio-Frequency Microelectronic Circuits for Telecommunication Applications, Chapter 1, 2, 5, Kluwer, 1999.
14 顾继慧。微波技术。北京：科学出版社，2004
15 赵国湘，高葆新。微波有源电路。北京：国防工业出版社，1990
16 戴永胜，茅经怀．采用反馈法使微波低噪声放大器同时获得最佳噪声和最小驻波的研究．固体电子学研究与进展，Vol．36，No．2，pp．156-162，1987．
17 赵震．宽频带低噪声放大器优化设计．Ansoft 2003用户通讯，pp22-25．
18 K.H.G. Loh and et. al.. High performance InP-based HEMT millimeter-wave low noise amplifier. IEEE MTT-S, pp. 805-808, 1989.
19 M.W Pospieszalski, et, al.. Millimeter-wave, cryogenically-callable amplifier using AIInAs/InP HEMTs. IEEE MTT-S, pp. 515-518, 1993.
20 党耀国，高文生．C频段常温HEMT-FET低噪声放大器．无线电工程，Vol．16，No．4，pp．12-18，1997．
21 S．雷蒙德，潘杰利．微波场效应晶体管的理论．设计和应用，北京：电子工业出版社，1987．
22 刘美红，陈邦媛，射频通信电路．科学出版社，2002：356-362
23 陈邦媛．射频通信技术．北京：科学出版社，2002．
24 张玉兴．射频模拟电路．北京：电子工业出版社，2002．
25 高葆新．微波集成电路．中国集成电路大全编委会，1992．
2 N. Dye and H. Granberg, Radio Frequency Transistors: Principles and Practical Applications, But-terworth-Heinemann, 1993.
3 G. Gonzalez, Microwave Transistor Amplifiers: Analysis and Design, Prentice Hall, Upper Saddle River, NJ, 1997.
4 P. Horowitz and W. Hill, The Art of Electronics, Cambridge University Press, Cambridge, UK, 1993.
5 D. Pozar, Microwave Engineering, John Wiley & Sons, New York, 1998.
6 P. Rizzi, Microwave Engineering: Passive Circuit, Prentice Hall, Englewood Cliffs, NJ, 1998.
7 I. Bahil and P. Bhartia, Microwave Solid State Circuit Design, John Wiley, New York, 1998.
8 G. Gonzales, Microwave Transistor Amplifiers: Analysis and Design, 2nd ed., Prentice Hall, UpperSaddle River, NJ, 1997.
9 D. Pozar, Microwave Engineering, 2nd ed, Wiley and Sons, New York, 1998.
10 Paul R. Gray and Robert G. Meyer, Analysis and Design of Analog Integrated Circuits, 3rd ed. Chapter 11, Wiley, 1993.
11 Robert G. Meyer and William D. Mack, "Al-GHz BiCMOS RF Front-End IC," IEEE J. Solid-State Circuits, vol. 29, pp. 350-355, March, 1994.
12 Derek K. Shaeffer and Thomas H. Lee, "A 1.5-V 1.5-GHz CMOS Low Noise Amplifier," IEEE J. Solid-State Circuits, vol. 32, pp. 745-759, May, 1997.
13 Yannis E. Papananos, Radio-Frequency Microelectronic Circuits for Telecommunication Applications, Chapter 1, 2, 5, Kluwer, 1999.
14 顾继慧。微波技术。北京：科学出版社，2004
15 赵国湘，高葆新。微波有源电路。北京：国防工业出版社，1990
16 戴永胜，茅经怀．采用反馈法使微波低噪声放大器同时获得最佳噪声和最小驻波的研究．固体电子学研究与进展，Vol．36，No．2，pp．156-162，1987．
17 赵震．宽频带低噪声放大器优化设计．Ansoft 2003用户通讯，pp22-25．
18 K.H.G. Loh and et. al.. High performance InP-based HEMT millimeter-wave low noise amplifier. IEEE MTT-S, pp. 805-808, 1989.
19 M.W Pospieszalski, et, al.. Millimeter-wave, cryogenically-callable amplifier using AIInAs/InP HEMTs. IEEE MTT-S, pp. 515-518, 1993.
20 党耀国，高文生．C频段常温HEMT-FET低噪声放大器．无线电工程，Vol．16，No．4，pp．12-18，1997．
21 S．雷蒙德，潘杰利．微波场效应晶体管的理论．设计和应用，北京：电子工业出版社，1987．
22 刘美红，陈邦媛，射频通信电路．科学出版社，2002：356-362
23 陈邦媛．射频通信技术．北京：科学出版社，2002．
24 张玉兴．射频模拟电路．北京：电子工业出版社，2002．
25 高葆新．微波集成电路．中国集成电路大全编委会，1992．
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