硅基太阳能电池陷光材料及陷光结构的研究
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摘要
降低光伏系统的成本首先要降低组件成本，而要降低组件成本首先要降低材料成本，特别是晶硅材料成本。即一是提高光电转换效率，二是薄膜化(或薄层化、薄片化)。太阳能电池厚度减小时，由于透射光引起的损失随着厚度的减小而增大，对于间接禁带材料硅来说，这种损失比直接禁带材料的大。
电池中光损失主要来源于以下三方面：①表面反射的损失；②进光面电极材料的覆盖面积对入射光总能量的损失；③由于电池厚度过薄而造成的透射损失。
针对光损失引入的陷光结构包括：①电池进光面减反，一般常采用蒸镀减反膜或表面织构；②光线射入电池体内后，增加光在吸收层的路径。例如，使吸收层的折射率大于其上下层织构材料以及加强背反射，使没有吸收的光再次返回电池吸收层，进行二次吸收；③尽量减少进光面栅线电极覆盖的面积，同时以能将光生电流最大限度的输出。计算表明：由于长波光子的低吸收率，材料薄至50μm时，电池的光电流密度随着减小。从光程计算出发来设计高收集效率的陷光结构，可使这种减小得以补偿。
目前国际上晶体硅太阳能电池厚度一般在50μm以上，陷光措施主要采取蒸镀减反膜或在表面制备绒面，单从减反效果上，绒面优于减反膜，因此，晶体硅电池中采用绒面技术是提高电池效率的措施之一。①单晶硅绒面电池的表面常采用碱腐蚀方法在表面构造金字塔结构；②多晶硅电池目前国际上大规模生产时，电池表面减反一般只采用Si_3N_4减反膜的方法。多晶硅绒面电池实验室效率虽已达到16.8％以上，但多晶硅绒面技术还没有广泛地应用于大规模生产，关键在于如何控制多晶硅绒面微结构的均匀性、稳定性和界面接触。
硅基薄膜太阳能电池在陷光上仅采用表面减反是不够的，常采用的陷光结构是：织构透明电极及背表面增反膜等。因此对透明电极材料的研究是很必要的。目前绒面SnO_2透明导电玻璃已产业化，但以此为衬底通过PECVD制备μc：Si：H薄膜时，在氢等离子体中SnO_2膜不稳定，易被还原变黑。而ZnO膜在氢等离子体中具有较好的稳定性，且渗杂ZnO薄膜的性能已可以与ITO和SnO_2薄膜相比。因此，在μc：Si：H薄膜太阳能电池中，采用ZnO：Al膜作为透明电极材料已成为趋势。
To decrease the cost of photovoltaic system, the cost of the modules must be firstly decreased. However, the lower cost of package asks the lower the cost of materials. Firstly, how to increase the efficency; secondly, try to thin the thickness of silicon wafer. When the thickness of solar cells are decreased the light loss from transmitance light increase. To the indirect band gap silicon, these light loss are larger than direct band gap materials.
The light trapping structure should include below: ①the fabrication of antireflection films on the surface of incident light; ②light trapping method should be adopted to enhance light absorption after the light insident, for example, back reflection layer or layers that have lower refraction index be prepared to reflect light back to the absorption layer; ③grids on the front surface should be as few as possible to increase aperture area so as to increase light induced current. Theoretical calculation implied: when material thickness was reduced to 50μm, if high effective light trapping structure which was designed from the optical path calculation was adopted, the light loss caused by decreasing the thickness of the material can be compensated.
Presently, the thickness of the solar cells on the world is generally more than 50μm. And the light trapping structure mostly is surface texture and evaporated antireflection film: ①for solar cells based on single crystalline silicon wafers, diamond textures were mostly adopted using alkali eroding method; ②for solar cells based on multicrystalline silicon wafers, merely S13N4 antireflection films were always prepared for large area commercially manufacturing. Although 16.8% efficiency had been achieved for rough surface multicrystalline silicon wafer based solar cells, rough surface method were not used for large scale manufacturing. The key to this method was to control the stability and surface contact. ③for silicon thin film solar cells, light trapping method was always textured transparent conductive contact and surface antireflection films.
At present, textured SnO_2 transparent conductive glass had been industrialized. But when used as substrate to prepare μc.Si.H thin films in PECVD, it could be deoxidized
电池中光损失主要来源于以下三方面：①表面反射的损失；②进光面电极材料的覆盖面积对入射光总能量的损失；③由于电池厚度过薄而造成的透射损失。
针对光损失引入的陷光结构包括：①电池进光面减反，一般常采用蒸镀减反膜或表面织构；②光线射入电池体内后，增加光在吸收层的路径。例如，使吸收层的折射率大于其上下层织构材料以及加强背反射，使没有吸收的光再次返回电池吸收层，进行二次吸收；③尽量减少进光面栅线电极覆盖的面积，同时以能将光生电流最大限度的输出。计算表明：由于长波光子的低吸收率，材料薄至50μm时，电池的光电流密度随着减小。从光程计算出发来设计高收集效率的陷光结构，可使这种减小得以补偿。
目前国际上晶体硅太阳能电池厚度一般在50μm以上，陷光措施主要采取蒸镀减反膜或在表面制备绒面，单从减反效果上，绒面优于减反膜，因此，晶体硅电池中采用绒面技术是提高电池效率的措施之一。①单晶硅绒面电池的表面常采用碱腐蚀方法在表面构造金字塔结构；②多晶硅电池目前国际上大规模生产时，电池表面减反一般只采用Si_3N_4减反膜的方法。多晶硅绒面电池实验室效率虽已达到16.8％以上，但多晶硅绒面技术还没有广泛地应用于大规模生产，关键在于如何控制多晶硅绒面微结构的均匀性、稳定性和界面接触。
硅基薄膜太阳能电池在陷光上仅采用表面减反是不够的，常采用的陷光结构是：织构透明电极及背表面增反膜等。因此对透明电极材料的研究是很必要的。目前绒面SnO_2透明导电玻璃已产业化，但以此为衬底通过PECVD制备μc：Si：H薄膜时，在氢等离子体中SnO_2膜不稳定，易被还原变黑。而ZnO膜在氢等离子体中具有较好的稳定性，且渗杂ZnO薄膜的性能已可以与ITO和SnO_2薄膜相比。因此，在μc：Si：H薄膜太阳能电池中，采用ZnO：Al膜作为透明电极材料已成为趋势。
To decrease the cost of photovoltaic system, the cost of the modules must be firstly decreased. However, the lower cost of package asks the lower the cost of materials. Firstly, how to increase the efficency; secondly, try to thin the thickness of silicon wafer. When the thickness of solar cells are decreased the light loss from transmitance light increase. To the indirect band gap silicon, these light loss are larger than direct band gap materials.
The light trapping structure should include below: ①the fabrication of antireflection films on the surface of incident light; ②light trapping method should be adopted to enhance light absorption after the light insident, for example, back reflection layer or layers that have lower refraction index be prepared to reflect light back to the absorption layer; ③grids on the front surface should be as few as possible to increase aperture area so as to increase light induced current. Theoretical calculation implied: when material thickness was reduced to 50μm, if high effective light trapping structure which was designed from the optical path calculation was adopted, the light loss caused by decreasing the thickness of the material can be compensated.
Presently, the thickness of the solar cells on the world is generally more than 50μm. And the light trapping structure mostly is surface texture and evaporated antireflection film: ①for solar cells based on single crystalline silicon wafers, diamond textures were mostly adopted using alkali eroding method; ②for solar cells based on multicrystalline silicon wafers, merely S13N4 antireflection films were always prepared for large area commercially manufacturing. Although 16.8% efficiency had been achieved for rough surface multicrystalline silicon wafer based solar cells, rough surface method were not used for large scale manufacturing. The key to this method was to control the stability and surface contact. ③for silicon thin film solar cells, light trapping method was always textured transparent conductive contact and surface antireflection films.
At present, textured SnO_2 transparent conductive glass had been industrialized. But when used as substrate to prepare μc.Si.H thin films in PECVD, it could be deoxidized
引文
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