蓝宝石CMP加工机理与工艺技术的研究
|
摘要
单晶蓝宝石具有良好的物理、化学和光学特性,在微电子、工业、国防、科研以及GaN晶片LED衬底领域得到越来越广泛的作用。随着科学技术的不断发展,对于蓝宝石晶片的加工精度以及表面质量要求越来越高,因此蓝宝石的高效低损加工工艺成为阻碍蓝宝石工业发展的主要障碍。
针对以上问题,本文用超精密双面抛光机对蓝宝石进行双面化学机械抛光加工。该方法加工设备比较简单,利于批量生产,且得到的材料表面精度和加工效率较高,能实现低成本、高效率的精密加工。本文的主要研究工作如下几个方面:
1.在蓝宝石抛光中,从动力学过程分析机械作用与化学作用的互相联系。用接触力学和流体动力学理论来建立抛光垫、工件以及磨粒之间的CMP模型,分析磨粒的机械作用机理。并通过抛光液对蓝宝石的化学作用分析CMP加工对蓝宝石表面的影响。
2.为提高蓝宝石的去除率和改善表面质量,在超精密双面抛光机上进行蓝宝石CMP双面抛光加工实验。选取不同的抛光液对蓝宝石进行CMP加工,得到由SiO2硅溶胶作为磨料的F/AO抛光液比较适合作为蓝宝石加工的抛光液。同时研究了抛光盘转速、抛光压力、抛光液浓度工艺参数对蓝宝石晶片去除率和表面质量的影响,通过实验对比理想的工艺参数。
3.采用BP神经网络和MATLAB的仿真,建立蓝宝石材料去除率的预测模型,可以实现不同的加工参数下的蓝宝石去除率的预测。
4.采用较佳的加工参数对蓝宝石进行优化实验,得到的蓝宝石晶片去除率比较高且表面达到镜面要求。金相显微镜与白光干涉仪对优化抛光后的蓝宝石晶片表面形貌进行了检测与分析,经过优化抛光后的晶片表面质量有了明显的提高,基本没有划痕,腐蚀坑等缺陷,也得到了比较好的表面的粗糙度。
Single crystal sapphire wafer has good physical, chemical and potical properties, so it has a wider role in microelectronics, industrial, defense, scientific research and GaN LED substrate areas. As the continuous development of scinece and technology, the accurate requirement become higher and higher for processing precision and surface quality of the sapphire wafer. So sapphire processing technology with high efficiency and low loss make a major obstacle for the developmetn of the sapphire.
To solve the above problem, ultra-precision doube-sided polishing machine was used to polish the sapphire with double-sided chamical mechanical polishing processing technology. The CMP processing method don’t need complicated processing equipment, was beneficial to batch production, and can get the precise surface and processing efficience, so it can achieve precision processing with low cost and high efficiency. As follow are the main research of this paper:
1. While sapphire polishing the contact between mechanical and chemical action from the Dynamic Process was analyzed. Using contact dynamics and hydrodynamics to establish the CMP model among the polishing pad, work piece and abrasive, and analyze the mechanism of mechanical action of the abrasive. By the chemical action of polishing slurry for sapphire, the effect of CMP processing for the sapphire surface was analyzed.
2. To improve the removal of the sapphire and the quality of the surface, ultra-precison double-sided polishing machine was used to polish the sapphire. Selecting the different polishing slurry for the sapphire CMP processing, FA/O polishing slurry with SiO2 as abrasive was most suitable. Also,the parameters of the polishing speed, polishing pressure and concentratons of the polishign slurry as to the influence of the removal and the surface quality was studied, and the ideal processing parameters were obtained through the experimental comparison.
3. Established a modell to predict the sapphire removal with different processing parameters by BP neural network and MTLAB simulation.
4. By the better processing parameters being adopted to the sapphire optimization experiment, sapphire surface removal get better and reach the mirror requirement. using optical microscope and white light interferometer, the sapphire surface after optimization polishing was tested and analyzed. After optimization polishing, sapphire surface was basically no scratches pits and other defect, and has been significantly improved,at the same time get the good surface roughness.
针对以上问题,本文用超精密双面抛光机对蓝宝石进行双面化学机械抛光加工。该方法加工设备比较简单,利于批量生产,且得到的材料表面精度和加工效率较高,能实现低成本、高效率的精密加工。本文的主要研究工作如下几个方面:
1.在蓝宝石抛光中,从动力学过程分析机械作用与化学作用的互相联系。用接触力学和流体动力学理论来建立抛光垫、工件以及磨粒之间的CMP模型,分析磨粒的机械作用机理。并通过抛光液对蓝宝石的化学作用分析CMP加工对蓝宝石表面的影响。
2.为提高蓝宝石的去除率和改善表面质量,在超精密双面抛光机上进行蓝宝石CMP双面抛光加工实验。选取不同的抛光液对蓝宝石进行CMP加工,得到由SiO2硅溶胶作为磨料的F/AO抛光液比较适合作为蓝宝石加工的抛光液。同时研究了抛光盘转速、抛光压力、抛光液浓度工艺参数对蓝宝石晶片去除率和表面质量的影响,通过实验对比理想的工艺参数。
3.采用BP神经网络和MATLAB的仿真,建立蓝宝石材料去除率的预测模型,可以实现不同的加工参数下的蓝宝石去除率的预测。
4.采用较佳的加工参数对蓝宝石进行优化实验,得到的蓝宝石晶片去除率比较高且表面达到镜面要求。金相显微镜与白光干涉仪对优化抛光后的蓝宝石晶片表面形貌进行了检测与分析,经过优化抛光后的晶片表面质量有了明显的提高,基本没有划痕,腐蚀坑等缺陷,也得到了比较好的表面的粗糙度。
Single crystal sapphire wafer has good physical, chemical and potical properties, so it has a wider role in microelectronics, industrial, defense, scientific research and GaN LED substrate areas. As the continuous development of scinece and technology, the accurate requirement become higher and higher for processing precision and surface quality of the sapphire wafer. So sapphire processing technology with high efficiency and low loss make a major obstacle for the developmetn of the sapphire.
To solve the above problem, ultra-precision doube-sided polishing machine was used to polish the sapphire with double-sided chamical mechanical polishing processing technology. The CMP processing method don’t need complicated processing equipment, was beneficial to batch production, and can get the precise surface and processing efficience, so it can achieve precision processing with low cost and high efficiency. As follow are the main research of this paper:
1. While sapphire polishing the contact between mechanical and chemical action from the Dynamic Process was analyzed. Using contact dynamics and hydrodynamics to establish the CMP model among the polishing pad, work piece and abrasive, and analyze the mechanism of mechanical action of the abrasive. By the chemical action of polishing slurry for sapphire, the effect of CMP processing for the sapphire surface was analyzed.
2. To improve the removal of the sapphire and the quality of the surface, ultra-precison double-sided polishing machine was used to polish the sapphire. Selecting the different polishing slurry for the sapphire CMP processing, FA/O polishing slurry with SiO2 as abrasive was most suitable. Also,the parameters of the polishing speed, polishing pressure and concentratons of the polishign slurry as to the influence of the removal and the surface quality was studied, and the ideal processing parameters were obtained through the experimental comparison.
3. Established a modell to predict the sapphire removal with different processing parameters by BP neural network and MTLAB simulation.
4. By the better processing parameters being adopted to the sapphire optimization experiment, sapphire surface removal get better and reach the mirror requirement. using optical microscope and white light interferometer, the sapphire surface after optimization polishing was tested and analyzed. After optimization polishing, sapphire surface was basically no scratches pits and other defect, and has been significantly improved,at the same time get the good surface roughness.
引文
[1] P. Roussel. GaN 2007-New perspectives for nitride materials and devices[J]. Yole Development, France, 13rd, 2007. 7.
[2] A. ZuKauSkas, M. S. Shur, R. G. aska.黄世华译.固体照明导论[M].化学工业出版社, 2006. 1.
[3]国家新材料行业生产力促进中心,国家半导体照明工程研发及产业联盟编.中国半导体照明产业发展报告(2005)[M].机械工业出版社, 2006. 1.
[4]国家发展和改革委员会高技术产业司,中国材料研究学会编.中国新材料产业发展报告(2005)[M].化学工业出版社, 2006. 1.
[5] Borst C L, Dipto G T, Gill W N, et al. Chemical Mechanical Mechanism of Low Dielectric Constant Polymers in Copper Slurries. Electrochem Soc, 1999, 146(11):4309.
[6] Y. S. Cho, J. Kim, Y. j. Park et a1. The effects of strained sapphire(0001)substrate On the structural quality of GaN epilayer[J]. Phys. stat. sol. 2004, 241(12):2722—2725.
[7] F. A. Ponce, D. P. Bour. Nitride-based semiconductors for blue and green light-emitting devices[J]. Nature, 1 997, 386:35 1-354.
[8]柏德藏.全球LED产业发展动态[J].电子测试, 2007, 8:P 4-7.
[9]晨明. LED的发展走势[J].光源与照明, 2007, 2:P 40.
[10]刘一兵,刘慧荧.高亮度发光二极管HB. LED及应用概况[J].湖南理工学院学报(自然科学版), 2007, 20:P42-45.
[11]蒋大鹏,赵成久,侯凤勤等.白光发光二极管的制备技术及主要特性[J].发光学报, 2003, 24(4):385. 390.
[12]日本半导体照明工程[J].发光与照明, 2003, (11):7-12.
[13]周太明.半导体照明的曙光[J].照明工程学报, 2004, 15(2):1-6.
[14]狄卫国,刘玉岭,司田华,等. ULSI衬底的化学机械抛光技术,半导体技术. 2002, 7(27):18.
[15] T. Saitow, T. Hirayama, T. Yamoto etal. Lattce Strain and Dislocations in Polished Surface Sapphire[J]. J. Am. Ceram. Soc. 2005, 88(8):2277-2285.
[16] NiuXin-huall, Liu Yu—ling, Tan Bai—mei et a1. Method of surface treatment on sapphire substrate[J]. Trans. Nonferrolus Met. S0c. China, 2006, 16:732—734.
[17] T. Takeeuchi, H. Takeuchi, S. Sota et a1. Optical properties of stained AlGaN and G2InN 0n GaN[J]. Japan Journal of applied physics, 1997, 36(2B):Ll77-Ll79.
[18]袁巨龙.功能陶瓷的超精密加工技术[M].哈尔滨:哈尔滨工业大学出版社, 2000.
[19]李圣怡.超精密机床与加工技术的新进展[J].航空精密制造技术. 2009年第45卷第2期26-28.
[20]袁巨龙.功能陶瓷的超精密加工技术[M].哈尔滨:哈尔滨工业大学出版社, 2000.
[21]汪建民主编.陶瓷技术手册(上、下).中华民国粉末冶金学会, 1994. 7.
[22] http:/www. ehinabaike. eom/artiele/316/hx/2007/20071109628367. html.
[23] V. A. Muratov, Trboehemieal polishing, Annual Review of Materials Scienee. 2000(30).
[24]周国安,种宝春.低k材料的化学机械抛光研究,显微、测量、微细加工技术与设备, 2008, 45(5):392—395.
[25] Mazahed A. R. Ahmadi G. Modeling the effect of bumpy abrasive particles on chemical mechanical polishing[J]. J Electrochem Soc, 2002, 149(7):G370. G375.
[26] Jindal A. Hegde S. Babu S. V. Chemical mechanical polishing using mixed abrasive slurries[J]. Electrochem Solid State Letters, 2002, 5(7):G48-G50.
[27]蓝宝石晶片化学机械抛光液的研制.
[28]吕海涛,张维连,左燕,等.化学腐蚀法研究蓝宝石单晶中的位错缺陷.半导体技术, 2004, 29(4):48-51.
[29]秦友兰,倪宗祥.提拉法生长蓝宝石晶体的工艺特性及晶体质量检测.重庆大学学报, 1994, 17(6):129-132.
[30]周国清,李红军,乔景文,等. LIGO计划用大尺寸蓝宝石晶体光学均匀性和弱吸收获得进展.光学学报, 2001, 21(3):383-384.
[31] ParkHyongjoon, Chan Helen M. Anovel proeess for the generation of pristine sapphire surfaees. Thin Solid Films, 2002, 422(1-2):135-140.
[32]陈杨,陈建清,陈志刚.超光滑表面抛光技术.江苏大学学报(自然科学版). 2003, 24(5)55- 59.
[33]魏源迁.国外硬脆材料的最新加工技术.磨床与磨削. 1998, (2)15-19.
[34]任敬心,史兴宽.磨削技术的新进展-硬脆材料光滑表面的超精磨削.中国机械工程, 1997, 8(4)106-110.
[35]阎纪旺,于骏.脆性光学材料超精密加工技术.物理. 1994, 23(2)97-102.
[36] Laertis Eeonomikos. STI Planarization Using Fixed Abrasive Teehnology, FutureFab 2002(12)
[37] Shijian Li, Lizhong Sun, etal. ALow Costand Residue-Free Abrasive-Free Copver CMP Proeess With Low Dishing, Erosion And oxide Loss, IITC2001/IEEE.
[38] V. A. Muratov, T. E. Fiseher. Trbochemiealpolishing, Annual Review of Materials seience 2000(30).
[39]许万生,古振瑭,陈炯彰等.钻石输磨及机械化学抛光复合制程应用于蓝宝石晶圆薄化加工[J].机械工业杂志, 2004, 254:107—115.
[40] Y. Namba, H. Tsuwa, R. Wada. Ultra Precision Float Polishing Maehine. Manufacturing Technology. 1987, 36:211-214.
[41] Henry W. Gutsche, JerryW. Moody. Polishing of sapphire with Colloidal Siliea. J. Eleetroehem. Soe. 1978, 258:136-138.
[42] Prochnow, E. Edwards, D. F Preparing precision ultrafine sapphire surfaces:a practicalmethod. Microeleetronic Engineering. 1986, 25(16):2639-2640.
[43] B. Hader, 0. Weis. Superpolishing sapphire: Amethod to produce atomieally flat and damage free surfaces. SurfaceSeience. 1989(10):118-130.
[44]李冰,郭霞,刘莹等.蓝宝石基LED外延片背减薄与抛光工艺研究.半导体技术, 2005.
[45]袁巨龙,崔丽芬,张如源等.蓝宝石单晶纳米加工技术的研究.仪器仪表学报. 1995, 16.
[46]赵之雯,牛新环,檀柏梅等.蓝宝石衬底材料哪P抛光工艺研究.纳米材料与结构. 2006, 13(1):04.
[47]吴涛,刘世民,高祀建等.蓝宝石ELID超精密磨削表面质量与变质层的研究[J].国际材料科学与工程学术研讨会, 2005:297~298.
[48] R. Jaieath, M. Desai, M. Stell, et a1. Comsumbales for the Chemical Mechanical Polishing of Dielectrics and Conductors[J]. MatRes Soc Symp Preo. 1994, 337:121～133.
[49]解生泽,周超梅,马先贵等.齿轮润滑油泵的润滑状态分析.沈阳工业大学学报, 2005, 25(5):374—377.
[50] F. W. Preston, J. Soc. Glass Tech., XI(1927):214.
[51] J. Patrick, W. L. Guthrie. Planarizing interlevel dielectrics by chemical-mechanical polishing. J. Electrochem. Soc, 138(1992)1778.
[52] [刘玉岭,檀柏梅,张楷亮,等.微电子技术工程材料工艺与测试.北京:电子工业出版社, 2004. 365.
[53]薛冬峰.钽酸锂晶体的结构研究.化学研究, 2002, 13(4):1
[54]孔勇发,许京军,张光寅,等.多功能光电材料-铌酸锂晶体.北京:科学出版社, 2005. 45.
[55]滨川圭弘.半导体器件.北京:科学出版社, OHM社, 2002. 69
[56] Yongwu Zhao, L. Chang. A micro—contact and wear model for chemical-mechanical polishing of silicon wafers. Wear. 2002. 252(3-4):220—226.
[57] Tich J, John Tichy, Joseph A. Levert, Lei Shan, et a1. Contact mechanics and lubrication hydrodynamics modeling for chemical mechabical polishing. J. of the Electrochemical Society, 1999, 146(4):1523—1528.
[58] Jianfeng Luo. Integrated modeling of chemical mechanical planarization-polishing(CMP) for integrated circuit fabrication from particle scale to die and wafer scales:(Doctoral dissertation), University of California, Berkeley. 2003.
[59] Jianfeng Luo, David A. Domfeld. Material Removal Regions in Chemical Mechanical P1anarization for Submicron Integrated Circuit Fabrication:Coupling Effects of Slurry Chemicals, Abrasive Size Distribution, and Wafer-Pad Contact Area. IEEE Transactions on Semiconductor Manufacturing, 2003, 16(1):45—56.
[60] Jianfeng Luo, David A. Domfeld. Material removal mechanism in chemical mechanical polishing:Theory and modeling. Transactions on Semiconductor Manufacturing, 2001, 14(2):1 12-133.
[61] Jianfeng Luo, David A. Domfeld. Effects of abrasives size distribution in chemical mechanical polishing: modeling and verification. IEEE Transaction: Semiconductor manufacturing, 2003, 16(3):469—476.
[62] F. G. Shi, B. Zhao, and Shi-Qing Wang. A new theory for CMP with soft pads. IITC 1998. 7:73-75.
[63] ChiWen Liu30, Bau-Tong Dai, wei Tsu, eta1. Modeling of wear mechanical during chemical mechanical polishing. J. Eleetrechem. Soe. 1996, 143(2):716-721.
[64] Gerd Nanz and Lawrence E. Camilletti, Modeling of chemical mechanical polishing:a review, IEEE Transaections on Semiconductor Manufacturing, 1995, 8(4), :382—389.
[65] Wang Yongguang, Zhao Yongwu, An Wei, et al. Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scale[J]. Applied Surface Science 253(2007):9173-9141.
[66] Jiang Jian-Zhong, Zhao Yong-Wu, Wang Yong-Guang, et al. A chemical mechanical polishing model based on the viscous flow of the amorphous layer[J]. Wear 265(2008):992-998.
[67] Trezona R. I, Allsopp D. N, Hutchings I. M. Transitions between two-body and three-body abrasive wear:influnence of test conditions in the microscale abrasive wear test[J]. Wear 225-229(1999):205-214.
[68]宗思邈.蓝宝石衬底抛光速率的研究[D].河北工业大学, 2008.
[69]周海,王黛萍,王兵,陈西府,冶远祥.抛光垫在蓝宝石衬底化学机械抛光中的应用研究.机械设计与制造[J]. 1001—3997(2009)07—0088—03.
[70]李树荣.蓝宝石晶片化学机械抛光液的研制[D].大连理工大学, 2008.
[71]葛哲学,孙志强.神经网络理论与MATLABR2007实现[M].电子工业大学出版社, 2007.
[72]郭晶,孙伟娟.神经网络与MATLAB 7实现[M].电子工业出版社.
[73] Fogel L J, WalshM J. Artificial Intelligence through Simulated Evolution [M]. Chichester: John Wiley2003.
[74] Fredric M. Ham.神经计算原理[M].北京:机械工业出版社, 2003年7月第1版.
[2] A. ZuKauSkas, M. S. Shur, R. G. aska.黄世华译.固体照明导论[M].化学工业出版社, 2006. 1.
[3]国家新材料行业生产力促进中心,国家半导体照明工程研发及产业联盟编.中国半导体照明产业发展报告(2005)[M].机械工业出版社, 2006. 1.
[4]国家发展和改革委员会高技术产业司,中国材料研究学会编.中国新材料产业发展报告(2005)[M].化学工业出版社, 2006. 1.
[5] Borst C L, Dipto G T, Gill W N, et al. Chemical Mechanical Mechanism of Low Dielectric Constant Polymers in Copper Slurries. Electrochem Soc, 1999, 146(11):4309.
[6] Y. S. Cho, J. Kim, Y. j. Park et a1. The effects of strained sapphire(0001)substrate On the structural quality of GaN epilayer[J]. Phys. stat. sol. 2004, 241(12):2722—2725.
[7] F. A. Ponce, D. P. Bour. Nitride-based semiconductors for blue and green light-emitting devices[J]. Nature, 1 997, 386:35 1-354.
[8]柏德藏.全球LED产业发展动态[J].电子测试, 2007, 8:P 4-7.
[9]晨明. LED的发展走势[J].光源与照明, 2007, 2:P 40.
[10]刘一兵,刘慧荧.高亮度发光二极管HB. LED及应用概况[J].湖南理工学院学报(自然科学版), 2007, 20:P42-45.
[11]蒋大鹏,赵成久,侯凤勤等.白光发光二极管的制备技术及主要特性[J].发光学报, 2003, 24(4):385. 390.
[12]日本半导体照明工程[J].发光与照明, 2003, (11):7-12.
[13]周太明.半导体照明的曙光[J].照明工程学报, 2004, 15(2):1-6.
[14]狄卫国,刘玉岭,司田华,等. ULSI衬底的化学机械抛光技术,半导体技术. 2002, 7(27):18.
[15] T. Saitow, T. Hirayama, T. Yamoto etal. Lattce Strain and Dislocations in Polished Surface Sapphire[J]. J. Am. Ceram. Soc. 2005, 88(8):2277-2285.
[16] NiuXin-huall, Liu Yu—ling, Tan Bai—mei et a1. Method of surface treatment on sapphire substrate[J]. Trans. Nonferrolus Met. S0c. China, 2006, 16:732—734.
[17] T. Takeeuchi, H. Takeuchi, S. Sota et a1. Optical properties of stained AlGaN and G2InN 0n GaN[J]. Japan Journal of applied physics, 1997, 36(2B):Ll77-Ll79.
[18]袁巨龙.功能陶瓷的超精密加工技术[M].哈尔滨:哈尔滨工业大学出版社, 2000.
[19]李圣怡.超精密机床与加工技术的新进展[J].航空精密制造技术. 2009年第45卷第2期26-28.
[20]袁巨龙.功能陶瓷的超精密加工技术[M].哈尔滨:哈尔滨工业大学出版社, 2000.
[21]汪建民主编.陶瓷技术手册(上、下).中华民国粉末冶金学会, 1994. 7.
[22] http:/www. ehinabaike. eom/artiele/316/hx/2007/20071109628367. html.
[23] V. A. Muratov, Trboehemieal polishing, Annual Review of Materials Scienee. 2000(30).
[24]周国安,种宝春.低k材料的化学机械抛光研究,显微、测量、微细加工技术与设备, 2008, 45(5):392—395.
[25] Mazahed A. R. Ahmadi G. Modeling the effect of bumpy abrasive particles on chemical mechanical polishing[J]. J Electrochem Soc, 2002, 149(7):G370. G375.
[26] Jindal A. Hegde S. Babu S. V. Chemical mechanical polishing using mixed abrasive slurries[J]. Electrochem Solid State Letters, 2002, 5(7):G48-G50.
[27]蓝宝石晶片化学机械抛光液的研制.
[28]吕海涛,张维连,左燕,等.化学腐蚀法研究蓝宝石单晶中的位错缺陷.半导体技术, 2004, 29(4):48-51.
[29]秦友兰,倪宗祥.提拉法生长蓝宝石晶体的工艺特性及晶体质量检测.重庆大学学报, 1994, 17(6):129-132.
[30]周国清,李红军,乔景文,等. LIGO计划用大尺寸蓝宝石晶体光学均匀性和弱吸收获得进展.光学学报, 2001, 21(3):383-384.
[31] ParkHyongjoon, Chan Helen M. Anovel proeess for the generation of pristine sapphire surfaees. Thin Solid Films, 2002, 422(1-2):135-140.
[32]陈杨,陈建清,陈志刚.超光滑表面抛光技术.江苏大学学报(自然科学版). 2003, 24(5)55- 59.
[33]魏源迁.国外硬脆材料的最新加工技术.磨床与磨削. 1998, (2)15-19.
[34]任敬心,史兴宽.磨削技术的新进展-硬脆材料光滑表面的超精磨削.中国机械工程, 1997, 8(4)106-110.
[35]阎纪旺,于骏.脆性光学材料超精密加工技术.物理. 1994, 23(2)97-102.
[36] Laertis Eeonomikos. STI Planarization Using Fixed Abrasive Teehnology, FutureFab 2002(12)
[37] Shijian Li, Lizhong Sun, etal. ALow Costand Residue-Free Abrasive-Free Copver CMP Proeess With Low Dishing, Erosion And oxide Loss, IITC2001/IEEE.
[38] V. A. Muratov, T. E. Fiseher. Trbochemiealpolishing, Annual Review of Materials seience 2000(30).
[39]许万生,古振瑭,陈炯彰等.钻石输磨及机械化学抛光复合制程应用于蓝宝石晶圆薄化加工[J].机械工业杂志, 2004, 254:107—115.
[40] Y. Namba, H. Tsuwa, R. Wada. Ultra Precision Float Polishing Maehine. Manufacturing Technology. 1987, 36:211-214.
[41] Henry W. Gutsche, JerryW. Moody. Polishing of sapphire with Colloidal Siliea. J. Eleetroehem. Soe. 1978, 258:136-138.
[42] Prochnow, E. Edwards, D. F Preparing precision ultrafine sapphire surfaces:a practicalmethod. Microeleetronic Engineering. 1986, 25(16):2639-2640.
[43] B. Hader, 0. Weis. Superpolishing sapphire: Amethod to produce atomieally flat and damage free surfaces. SurfaceSeience. 1989(10):118-130.
[44]李冰,郭霞,刘莹等.蓝宝石基LED外延片背减薄与抛光工艺研究.半导体技术, 2005.
[45]袁巨龙,崔丽芬,张如源等.蓝宝石单晶纳米加工技术的研究.仪器仪表学报. 1995, 16.
[46]赵之雯,牛新环,檀柏梅等.蓝宝石衬底材料哪P抛光工艺研究.纳米材料与结构. 2006, 13(1):04.
[47]吴涛,刘世民,高祀建等.蓝宝石ELID超精密磨削表面质量与变质层的研究[J].国际材料科学与工程学术研讨会, 2005:297~298.
[48] R. Jaieath, M. Desai, M. Stell, et a1. Comsumbales for the Chemical Mechanical Polishing of Dielectrics and Conductors[J]. MatRes Soc Symp Preo. 1994, 337:121～133.
[49]解生泽,周超梅,马先贵等.齿轮润滑油泵的润滑状态分析.沈阳工业大学学报, 2005, 25(5):374—377.
[50] F. W. Preston, J. Soc. Glass Tech., XI(1927):214.
[51] J. Patrick, W. L. Guthrie. Planarizing interlevel dielectrics by chemical-mechanical polishing. J. Electrochem. Soc, 138(1992)1778.
[52] [刘玉岭,檀柏梅,张楷亮,等.微电子技术工程材料工艺与测试.北京:电子工业出版社, 2004. 365.
[53]薛冬峰.钽酸锂晶体的结构研究.化学研究, 2002, 13(4):1
[54]孔勇发,许京军,张光寅,等.多功能光电材料-铌酸锂晶体.北京:科学出版社, 2005. 45.
[55]滨川圭弘.半导体器件.北京:科学出版社, OHM社, 2002. 69
[56] Yongwu Zhao, L. Chang. A micro—contact and wear model for chemical-mechanical polishing of silicon wafers. Wear. 2002. 252(3-4):220—226.
[57] Tich J, John Tichy, Joseph A. Levert, Lei Shan, et a1. Contact mechanics and lubrication hydrodynamics modeling for chemical mechabical polishing. J. of the Electrochemical Society, 1999, 146(4):1523—1528.
[58] Jianfeng Luo. Integrated modeling of chemical mechanical planarization-polishing(CMP) for integrated circuit fabrication from particle scale to die and wafer scales:(Doctoral dissertation), University of California, Berkeley. 2003.
[59] Jianfeng Luo, David A. Domfeld. Material Removal Regions in Chemical Mechanical P1anarization for Submicron Integrated Circuit Fabrication:Coupling Effects of Slurry Chemicals, Abrasive Size Distribution, and Wafer-Pad Contact Area. IEEE Transactions on Semiconductor Manufacturing, 2003, 16(1):45—56.
[60] Jianfeng Luo, David A. Domfeld. Material removal mechanism in chemical mechanical polishing:Theory and modeling. Transactions on Semiconductor Manufacturing, 2001, 14(2):1 12-133.
[61] Jianfeng Luo, David A. Domfeld. Effects of abrasives size distribution in chemical mechanical polishing: modeling and verification. IEEE Transaction: Semiconductor manufacturing, 2003, 16(3):469—476.
[62] F. G. Shi, B. Zhao, and Shi-Qing Wang. A new theory for CMP with soft pads. IITC 1998. 7:73-75.
[63] ChiWen Liu30, Bau-Tong Dai, wei Tsu, eta1. Modeling of wear mechanical during chemical mechanical polishing. J. Eleetrechem. Soe. 1996, 143(2):716-721.
[64] Gerd Nanz and Lawrence E. Camilletti, Modeling of chemical mechanical polishing:a review, IEEE Transaections on Semiconductor Manufacturing, 1995, 8(4), :382—389.
[65] Wang Yongguang, Zhao Yongwu, An Wei, et al. Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scale[J]. Applied Surface Science 253(2007):9173-9141.
[66] Jiang Jian-Zhong, Zhao Yong-Wu, Wang Yong-Guang, et al. A chemical mechanical polishing model based on the viscous flow of the amorphous layer[J]. Wear 265(2008):992-998.
[67] Trezona R. I, Allsopp D. N, Hutchings I. M. Transitions between two-body and three-body abrasive wear:influnence of test conditions in the microscale abrasive wear test[J]. Wear 225-229(1999):205-214.
[68]宗思邈.蓝宝石衬底抛光速率的研究[D].河北工业大学, 2008.
[69]周海,王黛萍,王兵,陈西府,冶远祥.抛光垫在蓝宝石衬底化学机械抛光中的应用研究.机械设计与制造[J]. 1001—3997(2009)07—0088—03.
[70]李树荣.蓝宝石晶片化学机械抛光液的研制[D].大连理工大学, 2008.
[71]葛哲学,孙志强.神经网络理论与MATLABR2007实现[M].电子工业大学出版社, 2007.
[72]郭晶,孙伟娟.神经网络与MATLAB 7实现[M].电子工业出版社.
[73] Fogel L J, WalshM J. Artificial Intelligence through Simulated Evolution [M]. Chichester: John Wiley2003.
[74] Fredric M. Ham.神经计算原理[M].北京:机械工业出版社, 2003年7月第1版.
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址：北京市海淀区学院路29号 邮编：100083 电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700 |