SCB火工品静电、射频损伤机理及其加固技术的研究
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摘要
作为一种颇具大规模应用前景的发火元件,半导体桥(SCB)火工品发展迅速,产品体系也在不断丰富中。然而,SCB火工品属于微电子火工品的范畴,其规模应用受到电磁干扰的限制。压敏电阻和热敏电阻具有阻值非线性的特点,是以金属氧化物为主要原材料制造的半导体元件,其电学性能与尺寸大小可按照用途来选择,具有在SCB火工品电磁防护上的潜在应用前景。为此,本文首次探索了静电和射频对SCB火工品作用的过程,初步探明了SCB火工品的静电和射频损伤机理,在火工品的电磁干扰易损特性方面形成了一些规律性的认识。在此基础上,将压敏电阻和热敏电阻作为防护元件,分别与SCB芯片并联连接,组成具有抗电磁干扰功能的火工品,研究了该火工品的抗静电和抗射频性能。
本文选取了V型角SCB芯片和对静电作用敏感的点火药剂LTNR,组成典型的SCB火工品,研究了其静电感度和易损特性。静电放电能量是影响SCB火工品静电易损特性的重要因素,不同静电放电(ESD)条件下火工品的静电损伤机理不同。低能量静电作用下(10000pF、5000Ω、23kV),其损伤机理为简单的电热转换、热传导作用过程；高能量静电作用下(10000pF、5000Ω、30kV),其损伤机理为等离子体作用过程,静电作用产生感应电流,形成焦耳热后SCB桥膜升温,温度高于多晶硅材料的沸点,产生等离子体后作用于点火药剂。
建立了SCB火工品静电作用的数学模型及物理模型,分析了桥膜温度随静电作用时间变化的规律,以及静电作用下SCB桥膜表面温度的分布情况。桥膜温度随ESD加载的时间先迅速增加后逐渐减小,存在最高温度值；桥膜温度从几何中心向上下尖角端递增,向左右两侧递减；25kV(10000pF、5000Ω)作用下,尖角处温度高达2689℃,高于多晶硅桥材料的沸点(2355℃)。模拟结果验证了静电对SCB火工品的热传导作用及等离子体作用机理。
以SCB火工品的静电损伤机理为指导,采用贴片压敏电阻对SCB火工品进行静电防护。静电作用下压敏电阻被击穿,与SCB并联后电流主要流经压敏电阻,静电能量耗散在压敏电阻上。典型SCB火工品在美军标(500pF、500Ω、25kV)条件下100%发火,而并联压敏电阻后火工品均未发火。压敏电阻提高了火工品的抗静电性能,可以用于SCB火工品的静电防护。
研究了三种尺寸SCB火工品的射频感度和易损特性,射频注入功率是影响SCB火工品射频易损特性的重要因素。S-SCB火工品的全发火功率为9.74W,M-SCB火工品为13.99W,L-SCB火工品为14.15W；射频注入会引起SCB火工品的意外发火或电爆性能改变,但是不会损伤SCB桥膜。射频作用产生感应电流,形成焦耳热后SCB桥膜升温,通过热传导作用引起药剂发火或性能改变。
建立了稳态传热模型和电磁耦合模型,理论模拟了射频作用下SCB桥膜表面温度随时间的变化关系。初始时桥膜温度随射频加载的时间逐渐增加,随后当其吸收的能量等于对外的散热量时,达到热平衡而温度恒定；射频功率越大,桥膜尺寸越小,桥膜温升越慢,产生的最大温度越高。射频能量在SCB桥膜上产生的温度低于多晶硅材料的熔点(1410℃),射频作用不会损伤SCB桥膜,与试验研究结果相吻合。
根据SCB火工品的射频损伤机理以及NTC热敏电阻的负温度系数特性,采用体积小易于封装的贴片热敏电阻,对SCB火工品进行射频防护。射频作用在SCB芯片上产生高温,NTC热敏电阻感应到温度后阻值减小,进而减少了流经SCB的射频感应电流。9.74W作用下,未加固的10发S-SCB火工品全部发火,热敏电阻防护后S-SCB火工品均未发火；未加固的10发L-SCB火工品在17.1W时全部发火,而并联热敏电阻的火工品在17.1W和20W条件下都未发火。NTC热敏电阻降低了火工品的射频感度,可以用于SCB火工品的射频防护。
It is important to explore the electromagnetic interference (EMI) mechanism for the electromagnetic compatibility (EMC) design of semiconductor bridge (SCB) explosive devices. The main contents in this paper include electro-thermal conversion model of electrostatic discharge (ESD) and heat transfer model of radio frequency (RP) for SCB, the electrostatic and RF sensitivity of SCB, SCB plasma diagnosis, the response of bridge film and explosive structure to electrostatic and RF, SCB ignition experiments, electromagnetic reinforcement methods for SCB. The research contents and conclusions are as follows:
(1) The electro-thermal conversion physical model and heat transfer mathematical model of electromagnetic to SCB were established. The transformation process of electromagnetic energy to Joule heating energy was analyzed, besides, the energy conversion efficiency and thermal dissipation, thermal equilibrium were discussed. The simulation result shows that EMI energy generates current density distribution on the surface of SCB film. The effect of Joule heating becomes greater as the current density increases. The electro-thermal conversion efficiency of ESD that belongs to the strongly transient heat conduction is higher than RF who has more thermal dissipation and loss.
(2) The Ansys software was used to simulate the electro-thermal coupling of EMI to SCB and the results show that the two V-type angles have the highest temperature. The temperature value increases from the geometric center of bridge film to the angles and decreases from the central region to the edges. ESD can produce the temperature higher than the boiling point of polysilicon bridge to form plasma discharge, while RF ignites the explosive mainly by heat transfer. The electrostatic and RF damage mechanisms of SCB explosive devices provide the guidance and ideas for the electromagnetic protection.
(3) The electrostatic and RF sensitivity of SCB were tested by the related experiments and the action mechanisms of electrostatic and RF were discussed. The microwave resonator probe and high-speed photography were used to measure the resultant plasma density variations during ESD process. The influence of electrostatic energy to ESD process and the physical form transformation of bridge film were obtained. The plasma electron density, luminous intensity and size variations as a function of time confirmed the plasma damage mechanism of ESD to SCB. The ignition condition of ESD thermal conductivity was discussed, as well as the response of discharge process to different electrostatic voltage and energy.
(4) The bridge appearances and explosive structures before and after RF were analyzed, as well as the influences of RF to the ignition properties, the electrical and thermodynamic parameters, the chemical structure of SCB film and explosive. The conclusion is that RF power, field strength and frequency affect the induced current on SCB chip, but the RF energy has no significant effect on the SCB film.
(5) According to the ESD action mechanism and microelectronics packaging technology, the surface mount devices (SMD) varistor was used to protect V-type SCB from ESD and it can effectively reduce the electrostatic sensitivity of explosive device. HAWK3optical microscope, capacitor discharge unit (CDU) system and so on were adopted to test the reinforcement effect. It is shown that the typical SCBs are no-fire under the GJB standard, contrarily, under the US military standard. The varistor can absorb transient voltage pulse and reduce the current through SCB. Ultimately, it improves the anti-static properties of explosive device.
(6) According to the RF action mechanism and the diversion laws of microelectronic circuit, the discrete components were used to enhance the anti-RF performance of SCBs which had different bridge-shaped, and ignition energy. The protective principle of NTC thermistors for SCB is different from TVS diodes and ferrite beads. The influence of induced temperature on SCB chip is independent with the electrical parameters of thermistors under the RF. NTC thermistors improve the heat dissipation efficiency of the ceramic plug and reduce the temperature on SCB chip. Finally, the RF sensitivity of explosive device is decreased and the thermistors do not affect the normal ignition of SCB.
本文选取了V型角SCB芯片和对静电作用敏感的点火药剂LTNR,组成典型的SCB火工品,研究了其静电感度和易损特性。静电放电能量是影响SCB火工品静电易损特性的重要因素,不同静电放电(ESD)条件下火工品的静电损伤机理不同。低能量静电作用下(10000pF、5000Ω、23kV),其损伤机理为简单的电热转换、热传导作用过程；高能量静电作用下(10000pF、5000Ω、30kV),其损伤机理为等离子体作用过程,静电作用产生感应电流,形成焦耳热后SCB桥膜升温,温度高于多晶硅材料的沸点,产生等离子体后作用于点火药剂。
建立了SCB火工品静电作用的数学模型及物理模型,分析了桥膜温度随静电作用时间变化的规律,以及静电作用下SCB桥膜表面温度的分布情况。桥膜温度随ESD加载的时间先迅速增加后逐渐减小,存在最高温度值；桥膜温度从几何中心向上下尖角端递增,向左右两侧递减；25kV(10000pF、5000Ω)作用下,尖角处温度高达2689℃,高于多晶硅桥材料的沸点(2355℃)。模拟结果验证了静电对SCB火工品的热传导作用及等离子体作用机理。
以SCB火工品的静电损伤机理为指导,采用贴片压敏电阻对SCB火工品进行静电防护。静电作用下压敏电阻被击穿,与SCB并联后电流主要流经压敏电阻,静电能量耗散在压敏电阻上。典型SCB火工品在美军标(500pF、500Ω、25kV)条件下100%发火,而并联压敏电阻后火工品均未发火。压敏电阻提高了火工品的抗静电性能,可以用于SCB火工品的静电防护。
研究了三种尺寸SCB火工品的射频感度和易损特性,射频注入功率是影响SCB火工品射频易损特性的重要因素。S-SCB火工品的全发火功率为9.74W,M-SCB火工品为13.99W,L-SCB火工品为14.15W；射频注入会引起SCB火工品的意外发火或电爆性能改变,但是不会损伤SCB桥膜。射频作用产生感应电流,形成焦耳热后SCB桥膜升温,通过热传导作用引起药剂发火或性能改变。
建立了稳态传热模型和电磁耦合模型,理论模拟了射频作用下SCB桥膜表面温度随时间的变化关系。初始时桥膜温度随射频加载的时间逐渐增加,随后当其吸收的能量等于对外的散热量时,达到热平衡而温度恒定；射频功率越大,桥膜尺寸越小,桥膜温升越慢,产生的最大温度越高。射频能量在SCB桥膜上产生的温度低于多晶硅材料的熔点(1410℃),射频作用不会损伤SCB桥膜,与试验研究结果相吻合。
根据SCB火工品的射频损伤机理以及NTC热敏电阻的负温度系数特性,采用体积小易于封装的贴片热敏电阻,对SCB火工品进行射频防护。射频作用在SCB芯片上产生高温,NTC热敏电阻感应到温度后阻值减小,进而减少了流经SCB的射频感应电流。9.74W作用下,未加固的10发S-SCB火工品全部发火,热敏电阻防护后S-SCB火工品均未发火；未加固的10发L-SCB火工品在17.1W时全部发火,而并联热敏电阻的火工品在17.1W和20W条件下都未发火。NTC热敏电阻降低了火工品的射频感度,可以用于SCB火工品的射频防护。
It is important to explore the electromagnetic interference (EMI) mechanism for the electromagnetic compatibility (EMC) design of semiconductor bridge (SCB) explosive devices. The main contents in this paper include electro-thermal conversion model of electrostatic discharge (ESD) and heat transfer model of radio frequency (RP) for SCB, the electrostatic and RF sensitivity of SCB, SCB plasma diagnosis, the response of bridge film and explosive structure to electrostatic and RF, SCB ignition experiments, electromagnetic reinforcement methods for SCB. The research contents and conclusions are as follows:
(1) The electro-thermal conversion physical model and heat transfer mathematical model of electromagnetic to SCB were established. The transformation process of electromagnetic energy to Joule heating energy was analyzed, besides, the energy conversion efficiency and thermal dissipation, thermal equilibrium were discussed. The simulation result shows that EMI energy generates current density distribution on the surface of SCB film. The effect of Joule heating becomes greater as the current density increases. The electro-thermal conversion efficiency of ESD that belongs to the strongly transient heat conduction is higher than RF who has more thermal dissipation and loss.
(2) The Ansys software was used to simulate the electro-thermal coupling of EMI to SCB and the results show that the two V-type angles have the highest temperature. The temperature value increases from the geometric center of bridge film to the angles and decreases from the central region to the edges. ESD can produce the temperature higher than the boiling point of polysilicon bridge to form plasma discharge, while RF ignites the explosive mainly by heat transfer. The electrostatic and RF damage mechanisms of SCB explosive devices provide the guidance and ideas for the electromagnetic protection.
(3) The electrostatic and RF sensitivity of SCB were tested by the related experiments and the action mechanisms of electrostatic and RF were discussed. The microwave resonator probe and high-speed photography were used to measure the resultant plasma density variations during ESD process. The influence of electrostatic energy to ESD process and the physical form transformation of bridge film were obtained. The plasma electron density, luminous intensity and size variations as a function of time confirmed the plasma damage mechanism of ESD to SCB. The ignition condition of ESD thermal conductivity was discussed, as well as the response of discharge process to different electrostatic voltage and energy.
(4) The bridge appearances and explosive structures before and after RF were analyzed, as well as the influences of RF to the ignition properties, the electrical and thermodynamic parameters, the chemical structure of SCB film and explosive. The conclusion is that RF power, field strength and frequency affect the induced current on SCB chip, but the RF energy has no significant effect on the SCB film.
(5) According to the ESD action mechanism and microelectronics packaging technology, the surface mount devices (SMD) varistor was used to protect V-type SCB from ESD and it can effectively reduce the electrostatic sensitivity of explosive device. HAWK3optical microscope, capacitor discharge unit (CDU) system and so on were adopted to test the reinforcement effect. It is shown that the typical SCBs are no-fire under the GJB standard, contrarily, under the US military standard. The varistor can absorb transient voltage pulse and reduce the current through SCB. Ultimately, it improves the anti-static properties of explosive device.
(6) According to the RF action mechanism and the diversion laws of microelectronic circuit, the discrete components were used to enhance the anti-RF performance of SCBs which had different bridge-shaped, and ignition energy. The protective principle of NTC thermistors for SCB is different from TVS diodes and ferrite beads. The influence of induced temperature on SCB chip is independent with the electrical parameters of thermistors under the RF. NTC thermistors improve the heat dissipation efficiency of the ceramic plug and reduce the temperature on SCB chip. Finally, the RF sensitivity of explosive device is decreased and the thermistors do not affect the normal ignition of SCB.
引文
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