白光LED用含铟及铌酸钆红色荧光粉的发光性能研究
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摘要
白光LED集寿命长、能耗低、不污染环境等优点于一身，备受研究人员的关注。白光LED的制作主要采用荧光体转换的方法，如果想获得高品质的白光，光谱中必须含有红光成分，故红色荧光粉在白光LED组成中扮演着重要角色。当前，红色荧光粉以硫化物、硫氧化物为主，其存在发光效率低、化学性质不稳定等缺陷，这成为制约白光LED发展的瓶颈之一。针对这一现状，本课题旨在开发性能良好的红色荧光粉，利用高温固相反应法制备了含铟系列及铌酸钆红色荧光粉，并对其发光性能、发光机理进行了探讨，以期拓展白光LED用红色荧光粉的研究。合成的含铟红色荧光粉基质涵盖铟酸镧、铌酸铟、钨钼酸铟化合物，其掺杂的激活剂离子为Eu~(3+)、Pr~(3+)、Sm~(3+)，相关的研究结果如下：
（1）LaInO_3:Eu~(3+)的激发光谱在394nm、464nm存在较强的吸收锐峰，在这两个波段光的激发下发射位于610nm的红光，其是~5D_0→~7F_2的特征发射峰。荧光粉发光强度只有当Eu~(3+)的掺杂浓度为20mol%时达到最大值，随后增加Eu~(3+)含量，发光强度由于浓度猝灭的原因而减小。按照Dexter理论，分析Eu~(3+)在LaInO_3基质中的自身猝灭机制是电四极-电四极的相互作用的结果。Bi~(3+)对Eu~(3+)起到敏化作用，在LaInO_3:Eu~(3+)荧光粉中引入Bi~(3+)，荧光粉的发光强度提高，最佳添加Bi~(3+)的浓度为3mol%。LaInO_3:Sm~(3+)荧光粉在激发光谱中有两处较强激发峰：405nm、460-480nm，这分别与LED芯片输出波长相近，说明能够被LED芯片发出的光激发。在405nm光激发下，LaInO_3:Eu~(3+)荧光粉发射600nm的橙红色光，仅当Sm~(3+)的掺杂浓度为4mol%，发光强度最高。
（2）InNbO_4:Eu~(3+)荧光粉的有效激发波长为394nm、466nm，其在近紫外、蓝光激发下发射612nm红光，Eu~(3+)在InNbO_4掺杂浓度为4mol%，发光强度最高。P、Ta元素加入InNbO_4:Eu~(3+)荧光粉中，这种混合基质荧光粉的发光强度得到提高，InNb_(0.6)P_(0.4)O_4:0.04Eu~(3+)、 InNb_(0.9)Ta_(0.1)O_4:0.04Eu~(3+)荧光粉的发光强度显著高于InNbO_4:0.04Eu~(3+)。InNbO_4:Pr荧光粉的激发光谱在蓝光范围存在449nm-470nm的锐线，其在466nm光激发下，发射光谱有2个峰值，分别位于603nm、614nm处，说明InNbO_4:Pr荧光粉在蓝光激发下能够发射红光。当Pr浓度为0.3mol%，荧光粉的发光强度最强。将Sm~(3+)加入InNbO_4:Eu~(3+)中合成的InNbO_4:Eu~(3+),Sm~(3+)荧光粉，激发光谱在405nm出有一Sm~(3+)吸收的锐峰，其是Sm~(3+)的~6H_(5/2)→~4K_(11/2)的能级跃迁。样品的发射光谱，不存在Sm~(3+)的发射峰，仅发现Eu~(3+)的位于612nm的最强发射峰，说明Sm~(3+)→Eu~(3+)能量传递的存在，因而改善了荧光粉的发光强度。InNbO_4:0.05Eu~(3+),0.05Sm~(3+)是成分配比理想的、发光强度较高的荧光粉。Gd对InNbO_4:Eu~(3+)荧光粉的发光强度起到增强作用，In_(0.91)Gd_(0.05)NbO_4:0.04Eu~(3+)的发光强度相对较好。
（3）In_2(MoO_4)_3:Eu~(3+)能够被395nm、466nm波长的光高效激发，发射612nm强烈的红光，Eu~(3+)浓度为40mol%时，荧光粉的发光强度最好，在395nm、466nm光激发下，其色度坐标分别为（0.63，0.35）、（0.60，0.38），红光颜色较为纯正。Bi~(3+)加入In_2(MoO_4)_3:0.4Eu~(3+)荧光粉中，浓度为3mol%，发光强度较好。In_2(MoO_4)_3:Eu~(3+),Sm~(3+)荧光粉的激发峰在近紫外波长范围得到宽化，发光强度比In_2(MoO_4)_3:Eu~(3+)好， In_2(MoO_4)_3:Eu~(3+),0.04Sm~(3+)是理想的红色荧光粉。对In_(1.6)(WO_4)x(MoO_4)_3-x:0.4Eu~(3+)的研究，结果说明，当x=0.04时，样品光谱强度高于In_(1.6)(MoO_4)_3:0.4Eu~(3+)。In_2-x(WO_4)_3:xEu~(3+)荧光粉对393nm近紫外光、464nm蓝光有很好的吸收，能够发射位于611nm较强的红光，这说明，In_2(WO_4)_3:Eu~(3+)荧光粉是一种有前途的白光LED应用的红色荧光粉。
对GdNbO_4:Eu~(3+)系列荧光粉的研究表明，该荧光粉的激发峰峰位在394nm、464nm两处，由于Eu~(3+)晶格中占据非反演对称中心的格位，发射光谱中Eu~(3+)的电偶极跃迁产生的612nm红光的强度显著大于磁偶极跃迁的强度，这对获得纯正的红光有利，Gd_(0.8)NbO_4:0.2Eu~(3+)是发光性能较好的红色荧光粉。在Gd_(0.8)NbO_4:0.2Eu~(3+)添加In元素，荧光粉的发光强度增强，Gd_(0.78)In_(0.02)NbO_4:0.2Eu~(3+)荧光粉的发光强度最高。在加Bi~(3+)的荧光粉中，Gd_(0.77)NbO_4:0.2Eu~(3+),0.03Bi~(3+)发光强度在612nm的发射强度是GdNbO_4:Eu~(3+)荧光粉的2倍左右，在此成分基础上合成的Gd_(0.74)In_(0.01)NbO_4:0.2Eu~(3+),0.03Bi~(3+)荧光粉的发光强度比Gd_(0.77)NbO_4:0.2Eu~(3+),0.03Bi~(3+)荧光粉高。此外，制备的GdNbO_4:0.2Eu~(3+),Sm~(3+)荧光粉，当Sm~(3+)含量为1mol%时荧光粉的发光强度相对较高，以此组分合成Gd0.78In0.01NbO_4:0.2Eu~(3+),0.01Sm~(3+)荧光粉，其在395nm紫外光激发下，色度坐标为（0.64，0.36），颜色非常纯正，故Gd_(0.78)In_(0.01)NbO_4:0.2Eu~(3+),0.01Sm~(3+)是实验制备的发光性能较好的白光LED用红色荧光材料。
White light emitting diodes (white LED) used as white light sources have attractedmore attention because of their many advantages such as long lifetime, low energycomsumption and environmental friendliness. Phosphor-converted white LEDs are themain methods to obtain white LEDs. The white light must include red light compositionin order to improve the quality of white light. So red phosphors play an important rolein the white LED. At present, red phosphors are mainly made of sulphides andoxysulfides. Because they have low luminescence efficiency and less chemical stable, ithas become the one of restraining factors. Aiming at the above state, the content of thisproject is to exploit the high performance red phosphors. The red phosphors withindium and GdNbO_4were prepared by the high temperature solid-state reaction. Theirluminescence properties and mechanism were also investigated for the purpose ofwidening the rearch on the red phosphors for white LED.
The matrix compounds consit of lanthanum indate, indium niobate, tungstates andmolybdates, which are doped by Eu~(3+), Pr~(3+)and Sm~(3+)ions. The relative results are asfollows.
(1) The emission spectrum of LaInO_3:Eu~(3+)has two strong absorption sharp lineslocated at394nm and464nm. When the phosphor is excited by the above lights, it canemit the red light at610nm which originates from~5D_0→~7F_2of Eu~(3+). Theluminescence intensity of the phosphor reaches the maxium when the concentration ofEu~(3+)is20mol%. Once the concentration is beyond20mol%, the intensity drops due tothe concentration quenching. According to the theory of Dexter, the self-quenchingmechanism of Eu~(3+)in the LaInO_3host results from the quadripole-quadripole reaction.The luminescence intensity doped with Bi~(3+)will be improved because of the sensitiveeffect of Bi~(3+)on the Eu~(3+). The best concentration of Bi~(3+)is3mol%. There are twostrong excitation peaks in the phosphor LaInO_3:Sm~(3+), which are respectively at405nm,460-480nm. They consist with the output wavelengths of LED chips, so this phosphorcan be excited by the LED chips. LaInO_3:Sm~(3+)emits the orange red light at600nm andthe PL intensity reaches the maxium under the4mol%concentration of Sm~(3+).
(2) InNbO_4:Eu~(3+)has two excitation wavelengths which include394nm and466nm,which can emit red light at612nm. The4mol%concentration of doping Eu~(3+)makes theluminescence intensity achieve the maximal value. The PL intensities of the phosphors InNb1.6P0.4O_4:0.04Eu~(3+)and InNb0.9Ta0.1O_4:0.04Eu~(3+)are higher than that ofthe phosphor InNbO_4:0.04Eu~(3+)due to the additions of P and Ta elements. The spectrumof the phosphor InNbO_4:Pr has some sharp lines from449nm to470nm. The emissionspectrum has two peaks located at603nm and614nm excited at466nm, which indicatesthat it can be excited by blue light to emit red light. The PL intensity achieves themaxium when the concentration of Pr is0.3mol%. For the phosphor InNbO_4:Eu~(3+),Sm~(3+),there is a absorption peak at405nm in the excitation spectrum, which results of theenergy transition of~6H_(5/2)→~4K_(11/2)of Sm~(3+). In the emission spectrum, threre is nopeak of Sm~(3+)emission and the strong peak of Eu~(3+)emission at612nm is observed, thusit illustrates that the energy transition ofSm~(3+)→Eu~(3+)exits and the PL intensityincreases with the Sm~(3+)increasing. InNbO_4:0.05Eu~(3+),0.05Sm~(3+)is an ideal phosphor inthe matter of PL intensity. The photoluminescence intensity ofIn_(0.91)Gd_(0.05)NbO_4:0.04Eu~(3+)is better than the phosphor InNbO_4:0.04Eu~(3+)because of theGd element addition.
(3) In_2(MoO_4)_3:Eu~(3+)can be efficiently excited by the395nm and466nm lights toemit strong red light at612nm. The photoluminescence intensity of the phoshphor withthe40mol%concentration of Eu~(3+)is the best and its CIE chromaticity coordinates are(0.63,0.35) and (0.60,0.38) respectively excited at395nm and466nm, which is close tothe pure red light. With the addition of3mol%Bi~(3+)in the phosphor In_2(MoO_4)_3:0.4Eu~(3+),the phosphor In_2(MoO_4)_3:0.4Eu~(3+),0.03Bi~(3+)has good PL intensity. For the phosphorIn_2(MoO_4)_3:Eu~(3+),Sm~(3+), its excitation spectrum is widened at the scope of thenear-ultraviolet light and PL intensity is better than the phosphor In_2(MoO_4)_3:Eu~(3+). SoIn_2(MoO_4)_3:Eu~(3+),0.04Sm~(3+)is a good phosphor for white LED. The intensity of thephosphor In_(1.6)(WO_4)x(MoO_4)_3-x:0.4Eu~(3+)is higher than the In_(1.6)(MoO_4)_3:0.4Eu~(3+)when xvalue is0.04owing to the W element addition. The phosphor In_2-x(WO_4)_3:xEu~(3+)canabsorb the energy of the light at395nm and466nm to emit red light at611nm, whichillustrates that In_2(WO_4)_3:Eu~(3+)is a potential red phosphor for white LED
The research on the series of GdNbO_4:Eu~(3+)shows there exit394nm and464nmexcitation peaks in the excitation spectrum. Because the Eu~(3+)is located in a asymmetriccation environment of the lattice, the intensity of electric dipole transition for the Eu~(3+)at612nm is obviously stronger than that of magnetic dipole transition. Compared withdifferent content of Eu~(3+), the phosphor Gd_(0.8)NbO_4:0.2Eu~(3+)belongs to a better phosphor.The PL intensity of the Gd_(0.8)NbO_4:0.2Eu~(3+)with the addition of In element increases andthe Gd_(0.78)In_(0.02)NbO_4:0.2Eu~(3+)is suggested as the best phosphor among the Gd_(0.78-x)In_xNbO_4:0.2Eu~(3+)phosphors. Compared with the Gd_(0.8)NbO_4:0.2Eu~(3+), theintensity of the Gd_(0.77)NbO_4:0.2Eu~(3+),0.03Bi~(3+)at612nm is about twice stronger than theGd_(0.8)NbO_4:0.2Eu~(3+). Based on the Gd_(0.77)NbO_4:0.2Eu~(3+),0.03Bi~(3+)constituent, thephosphor Gd_(0.78)In_(0.01)NbO_4:0.2Eu~(3+),0.01Sm~(3+)was synthesized. The CIE chromaticitycoordinates of Gd_(0.78)In_(0.01)NbO_4:0.2Eu~(3+),0.01Sm~(3+)are x=0.64, y=0.36under theexcitation of the light at395nm and its color is close to pure red light. From the aboveresults, it can be concluded that the phosphor Gd_(0.78)In_(0.01)NbO_4:0.2Eu~(3+),0.01Sm~(3+)is thebest photoluminescence material for the white LED.
（1）LaInO_3:Eu~(3+)的激发光谱在394nm、464nm存在较强的吸收锐峰，在这两个波段光的激发下发射位于610nm的红光，其是~5D_0→~7F_2的特征发射峰。荧光粉发光强度只有当Eu~(3+)的掺杂浓度为20mol%时达到最大值，随后增加Eu~(3+)含量，发光强度由于浓度猝灭的原因而减小。按照Dexter理论，分析Eu~(3+)在LaInO_3基质中的自身猝灭机制是电四极-电四极的相互作用的结果。Bi~(3+)对Eu~(3+)起到敏化作用，在LaInO_3:Eu~(3+)荧光粉中引入Bi~(3+)，荧光粉的发光强度提高，最佳添加Bi~(3+)的浓度为3mol%。LaInO_3:Sm~(3+)荧光粉在激发光谱中有两处较强激发峰：405nm、460-480nm，这分别与LED芯片输出波长相近，说明能够被LED芯片发出的光激发。在405nm光激发下，LaInO_3:Eu~(3+)荧光粉发射600nm的橙红色光，仅当Sm~(3+)的掺杂浓度为4mol%，发光强度最高。
（2）InNbO_4:Eu~(3+)荧光粉的有效激发波长为394nm、466nm，其在近紫外、蓝光激发下发射612nm红光，Eu~(3+)在InNbO_4掺杂浓度为4mol%，发光强度最高。P、Ta元素加入InNbO_4:Eu~(3+)荧光粉中，这种混合基质荧光粉的发光强度得到提高，InNb_(0.6)P_(0.4)O_4:0.04Eu~(3+)、 InNb_(0.9)Ta_(0.1)O_4:0.04Eu~(3+)荧光粉的发光强度显著高于InNbO_4:0.04Eu~(3+)。InNbO_4:Pr荧光粉的激发光谱在蓝光范围存在449nm-470nm的锐线，其在466nm光激发下，发射光谱有2个峰值，分别位于603nm、614nm处，说明InNbO_4:Pr荧光粉在蓝光激发下能够发射红光。当Pr浓度为0.3mol%，荧光粉的发光强度最强。将Sm~(3+)加入InNbO_4:Eu~(3+)中合成的InNbO_4:Eu~(3+),Sm~(3+)荧光粉，激发光谱在405nm出有一Sm~(3+)吸收的锐峰，其是Sm~(3+)的~6H_(5/2)→~4K_(11/2)的能级跃迁。样品的发射光谱，不存在Sm~(3+)的发射峰，仅发现Eu~(3+)的位于612nm的最强发射峰，说明Sm~(3+)→Eu~(3+)能量传递的存在，因而改善了荧光粉的发光强度。InNbO_4:0.05Eu~(3+),0.05Sm~(3+)是成分配比理想的、发光强度较高的荧光粉。Gd对InNbO_4:Eu~(3+)荧光粉的发光强度起到增强作用，In_(0.91)Gd_(0.05)NbO_4:0.04Eu~(3+)的发光强度相对较好。
（3）In_2(MoO_4)_3:Eu~(3+)能够被395nm、466nm波长的光高效激发，发射612nm强烈的红光，Eu~(3+)浓度为40mol%时，荧光粉的发光强度最好，在395nm、466nm光激发下，其色度坐标分别为（0.63，0.35）、（0.60，0.38），红光颜色较为纯正。Bi~(3+)加入In_2(MoO_4)_3:0.4Eu~(3+)荧光粉中，浓度为3mol%，发光强度较好。In_2(MoO_4)_3:Eu~(3+),Sm~(3+)荧光粉的激发峰在近紫外波长范围得到宽化，发光强度比In_2(MoO_4)_3:Eu~(3+)好， In_2(MoO_4)_3:Eu~(3+),0.04Sm~(3+)是理想的红色荧光粉。对In_(1.6)(WO_4)x(MoO_4)_3-x:0.4Eu~(3+)的研究，结果说明，当x=0.04时，样品光谱强度高于In_(1.6)(MoO_4)_3:0.4Eu~(3+)。In_2-x(WO_4)_3:xEu~(3+)荧光粉对393nm近紫外光、464nm蓝光有很好的吸收，能够发射位于611nm较强的红光，这说明，In_2(WO_4)_3:Eu~(3+)荧光粉是一种有前途的白光LED应用的红色荧光粉。
对GdNbO_4:Eu~(3+)系列荧光粉的研究表明，该荧光粉的激发峰峰位在394nm、464nm两处，由于Eu~(3+)晶格中占据非反演对称中心的格位，发射光谱中Eu~(3+)的电偶极跃迁产生的612nm红光的强度显著大于磁偶极跃迁的强度，这对获得纯正的红光有利，Gd_(0.8)NbO_4:0.2Eu~(3+)是发光性能较好的红色荧光粉。在Gd_(0.8)NbO_4:0.2Eu~(3+)添加In元素，荧光粉的发光强度增强，Gd_(0.78)In_(0.02)NbO_4:0.2Eu~(3+)荧光粉的发光强度最高。在加Bi~(3+)的荧光粉中，Gd_(0.77)NbO_4:0.2Eu~(3+),0.03Bi~(3+)发光强度在612nm的发射强度是GdNbO_4:Eu~(3+)荧光粉的2倍左右，在此成分基础上合成的Gd_(0.74)In_(0.01)NbO_4:0.2Eu~(3+),0.03Bi~(3+)荧光粉的发光强度比Gd_(0.77)NbO_4:0.2Eu~(3+),0.03Bi~(3+)荧光粉高。此外，制备的GdNbO_4:0.2Eu~(3+),Sm~(3+)荧光粉，当Sm~(3+)含量为1mol%时荧光粉的发光强度相对较高，以此组分合成Gd0.78In0.01NbO_4:0.2Eu~(3+),0.01Sm~(3+)荧光粉，其在395nm紫外光激发下，色度坐标为（0.64，0.36），颜色非常纯正，故Gd_(0.78)In_(0.01)NbO_4:0.2Eu~(3+),0.01Sm~(3+)是实验制备的发光性能较好的白光LED用红色荧光材料。
White light emitting diodes (white LED) used as white light sources have attractedmore attention because of their many advantages such as long lifetime, low energycomsumption and environmental friendliness. Phosphor-converted white LEDs are themain methods to obtain white LEDs. The white light must include red light compositionin order to improve the quality of white light. So red phosphors play an important rolein the white LED. At present, red phosphors are mainly made of sulphides andoxysulfides. Because they have low luminescence efficiency and less chemical stable, ithas become the one of restraining factors. Aiming at the above state, the content of thisproject is to exploit the high performance red phosphors. The red phosphors withindium and GdNbO_4were prepared by the high temperature solid-state reaction. Theirluminescence properties and mechanism were also investigated for the purpose ofwidening the rearch on the red phosphors for white LED.
The matrix compounds consit of lanthanum indate, indium niobate, tungstates andmolybdates, which are doped by Eu~(3+), Pr~(3+)and Sm~(3+)ions. The relative results are asfollows.
(1) The emission spectrum of LaInO_3:Eu~(3+)has two strong absorption sharp lineslocated at394nm and464nm. When the phosphor is excited by the above lights, it canemit the red light at610nm which originates from~5D_0→~7F_2of Eu~(3+). Theluminescence intensity of the phosphor reaches the maxium when the concentration ofEu~(3+)is20mol%. Once the concentration is beyond20mol%, the intensity drops due tothe concentration quenching. According to the theory of Dexter, the self-quenchingmechanism of Eu~(3+)in the LaInO_3host results from the quadripole-quadripole reaction.The luminescence intensity doped with Bi~(3+)will be improved because of the sensitiveeffect of Bi~(3+)on the Eu~(3+). The best concentration of Bi~(3+)is3mol%. There are twostrong excitation peaks in the phosphor LaInO_3:Sm~(3+), which are respectively at405nm,460-480nm. They consist with the output wavelengths of LED chips, so this phosphorcan be excited by the LED chips. LaInO_3:Sm~(3+)emits the orange red light at600nm andthe PL intensity reaches the maxium under the4mol%concentration of Sm~(3+).
(2) InNbO_4:Eu~(3+)has two excitation wavelengths which include394nm and466nm,which can emit red light at612nm. The4mol%concentration of doping Eu~(3+)makes theluminescence intensity achieve the maximal value. The PL intensities of the phosphors InNb1.6P0.4O_4:0.04Eu~(3+)and InNb0.9Ta0.1O_4:0.04Eu~(3+)are higher than that ofthe phosphor InNbO_4:0.04Eu~(3+)due to the additions of P and Ta elements. The spectrumof the phosphor InNbO_4:Pr has some sharp lines from449nm to470nm. The emissionspectrum has two peaks located at603nm and614nm excited at466nm, which indicatesthat it can be excited by blue light to emit red light. The PL intensity achieves themaxium when the concentration of Pr is0.3mol%. For the phosphor InNbO_4:Eu~(3+),Sm~(3+),there is a absorption peak at405nm in the excitation spectrum, which results of theenergy transition of~6H_(5/2)→~4K_(11/2)of Sm~(3+). In the emission spectrum, threre is nopeak of Sm~(3+)emission and the strong peak of Eu~(3+)emission at612nm is observed, thusit illustrates that the energy transition ofSm~(3+)→Eu~(3+)exits and the PL intensityincreases with the Sm~(3+)increasing. InNbO_4:0.05Eu~(3+),0.05Sm~(3+)is an ideal phosphor inthe matter of PL intensity. The photoluminescence intensity ofIn_(0.91)Gd_(0.05)NbO_4:0.04Eu~(3+)is better than the phosphor InNbO_4:0.04Eu~(3+)because of theGd element addition.
(3) In_2(MoO_4)_3:Eu~(3+)can be efficiently excited by the395nm and466nm lights toemit strong red light at612nm. The photoluminescence intensity of the phoshphor withthe40mol%concentration of Eu~(3+)is the best and its CIE chromaticity coordinates are(0.63,0.35) and (0.60,0.38) respectively excited at395nm and466nm, which is close tothe pure red light. With the addition of3mol%Bi~(3+)in the phosphor In_2(MoO_4)_3:0.4Eu~(3+),the phosphor In_2(MoO_4)_3:0.4Eu~(3+),0.03Bi~(3+)has good PL intensity. For the phosphorIn_2(MoO_4)_3:Eu~(3+),Sm~(3+), its excitation spectrum is widened at the scope of thenear-ultraviolet light and PL intensity is better than the phosphor In_2(MoO_4)_3:Eu~(3+). SoIn_2(MoO_4)_3:Eu~(3+),0.04Sm~(3+)is a good phosphor for white LED. The intensity of thephosphor In_(1.6)(WO_4)x(MoO_4)_3-x:0.4Eu~(3+)is higher than the In_(1.6)(MoO_4)_3:0.4Eu~(3+)when xvalue is0.04owing to the W element addition. The phosphor In_2-x(WO_4)_3:xEu~(3+)canabsorb the energy of the light at395nm and466nm to emit red light at611nm, whichillustrates that In_2(WO_4)_3:Eu~(3+)is a potential red phosphor for white LED
The research on the series of GdNbO_4:Eu~(3+)shows there exit394nm and464nmexcitation peaks in the excitation spectrum. Because the Eu~(3+)is located in a asymmetriccation environment of the lattice, the intensity of electric dipole transition for the Eu~(3+)at612nm is obviously stronger than that of magnetic dipole transition. Compared withdifferent content of Eu~(3+), the phosphor Gd_(0.8)NbO_4:0.2Eu~(3+)belongs to a better phosphor.The PL intensity of the Gd_(0.8)NbO_4:0.2Eu~(3+)with the addition of In element increases andthe Gd_(0.78)In_(0.02)NbO_4:0.2Eu~(3+)is suggested as the best phosphor among the Gd_(0.78-x)In_xNbO_4:0.2Eu~(3+)phosphors. Compared with the Gd_(0.8)NbO_4:0.2Eu~(3+), theintensity of the Gd_(0.77)NbO_4:0.2Eu~(3+),0.03Bi~(3+)at612nm is about twice stronger than theGd_(0.8)NbO_4:0.2Eu~(3+). Based on the Gd_(0.77)NbO_4:0.2Eu~(3+),0.03Bi~(3+)constituent, thephosphor Gd_(0.78)In_(0.01)NbO_4:0.2Eu~(3+),0.01Sm~(3+)was synthesized. The CIE chromaticitycoordinates of Gd_(0.78)In_(0.01)NbO_4:0.2Eu~(3+),0.01Sm~(3+)are x=0.64, y=0.36under theexcitation of the light at395nm and its color is close to pure red light. From the aboveresults, it can be concluded that the phosphor Gd_(0.78)In_(0.01)NbO_4:0.2Eu~(3+),0.01Sm~(3+)is thebest photoluminescence material for the white LED.
引文
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