晶体管建模技术的研究
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摘要
本文主要进行晶体管建模技术的研究,其主要目的是建立GaAsFET大信号非线性电路模型,给出一个计算机非线性仿真模拟的平台。论文首先从传统的非线性的表征方法入手,对传统的非线性的表征方法进行了归纳总结。在对传统的非线性的表征方法进行总结后,论文提出一种新的非线性表征方法—非线性散射函数,并对其性质进行了一些试探性的讨论。
在论文里还讨论了GaAsFET小信号模型参数的提取,对已有的建模方法进行了学习和研究,讨论了优化过程中目标函数的选取等问题,提出了一种复杂电路S参数的计算方法,成功地建立了GaAsFET的小信号模型。在小信号模型的基础上,讨论了晶体管大信号非线性建模。通过脉冲电流法测量GaAsFET的I-V特性,完成GaAsFET大信号非线性模型的建立。在建模的过程中,对原有的电流源模型进行了修正,在不增加高次项的基础得到一种新的修正模型,提高了拟合精度.这种新的模型能够更准确的描述晶体管的大信号特性。对于晶体管大信号的非线性分析有很大的作用和帮助。下一步我们要对此模型用谐波平衡进行大信号非线性分析,计算由于非线性产生的波成分,最后来验证非线性散射函数的理论。
This paper mainly discusses the method of transistor modeling and the expression of non-linearity. The purpose is to establish a simulated platform of GaAs FET in computer for calculating the non- linearity of non- linear circuit (especially GaAs FET).The non- linearity of circuit is known for a long time, and can be expressed in many ways. After the traditional expression is concluded, a new expression of non-linear Scatter Function is presented, and it’s character being discussed.
The extraction of parameter of GaAsFET in small-signal is discussed, And the already existed method of modeling of GaAsFET in small-signal is concluded. In the process of modeling in small-signal state, a new method to calculate S-parameters of a complex network is presented, and it’s easy to get the S-parameters of complex network by this method. At last, the model of GaAsFET in small-signal is successfully established. This paper also introduces methods to model GaAs FET in large-signal state. Based on the model of GaAsFET in small-signal, the non-linear model of GaAsFET in large-signal is successfully established by measuring GaAsFET in the way of pulse current and calculating non-linear character of GaAsFET. And there is a new modified model in large-signal in this paper. This model is more accurate than anyone else. It’s very useful to analyse non-linearity of transistor in large-signal. Next, we will analyse this model with harmonic balance method in order to verify non-linear Scatter Function.
在论文里还讨论了GaAsFET小信号模型参数的提取,对已有的建模方法进行了学习和研究,讨论了优化过程中目标函数的选取等问题,提出了一种复杂电路S参数的计算方法,成功地建立了GaAsFET的小信号模型。在小信号模型的基础上,讨论了晶体管大信号非线性建模。通过脉冲电流法测量GaAsFET的I-V特性,完成GaAsFET大信号非线性模型的建立。在建模的过程中,对原有的电流源模型进行了修正,在不增加高次项的基础得到一种新的修正模型,提高了拟合精度.这种新的模型能够更准确的描述晶体管的大信号特性。对于晶体管大信号的非线性分析有很大的作用和帮助。下一步我们要对此模型用谐波平衡进行大信号非线性分析,计算由于非线性产生的波成分,最后来验证非线性散射函数的理论。
This paper mainly discusses the method of transistor modeling and the expression of non-linearity. The purpose is to establish a simulated platform of GaAs FET in computer for calculating the non- linearity of non- linear circuit (especially GaAs FET).The non- linearity of circuit is known for a long time, and can be expressed in many ways. After the traditional expression is concluded, a new expression of non-linear Scatter Function is presented, and it’s character being discussed.
The extraction of parameter of GaAsFET in small-signal is discussed, And the already existed method of modeling of GaAsFET in small-signal is concluded. In the process of modeling in small-signal state, a new method to calculate S-parameters of a complex network is presented, and it’s easy to get the S-parameters of complex network by this method. At last, the model of GaAsFET in small-signal is successfully established. This paper also introduces methods to model GaAs FET in large-signal state. Based on the model of GaAsFET in small-signal, the non-linear model of GaAsFET in large-signal is successfully established by measuring GaAsFET in the way of pulse current and calculating non-linear character of GaAsFET. And there is a new modified model in large-signal in this paper. This model is more accurate than anyone else. It’s very useful to analyse non-linearity of transistor in large-signal. Next, we will analyse this model with harmonic balance method in order to verify non-linear Scatter Function.
引文
[1]程书田,赵希明“一种优化微波FET小信号模型的新方法”,现代雷达,1996.04,第三期
[2] Paul M. White, Senior Member, IEEE, and Richard M. Healy“Improved Equivalent Circuit for Determination of MESFET and HEMT Parasitic Capacitances from“Coldfet”Measurements”IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 3, NO. 12, DECEMBER 1993
[3] GILLES DAMBRINE, ALAIN CAPPY, FREDERIC HELIODORE. AND EDOUARD PLAYEZ“A New Method for Determining the FET Small-Signal Equivalent Circuit”IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 36, NO. 7, JULY 1988
[4]廖承恩“微波技术基础”,西安电子科技大学出版社,2004.06 P197-203
[5] Tri T. Ha(美)“固体微波放大器设计”廖承恩议,付君眉校,国防工业出版社。
[6]程书田梁昌洪“利用随机初始值法优化提取微波FET小信号模型参数”西安电子科技大学学报,1998年6月第25卷第3期
[7]陈开周“最优化计算方法”西安电子科技大学出版社
[8] MANFRED BERROTH AND ROLAND BOSCH“Broad-Band Determination of the FET Small-Signal Equivalent Circuit”lEEE TRANSACTIONS ON MICROWAVE TIIFORY AND TECHNlQUES, VOI . 38, NO. 7, JU1.Y 1990
[9] Gênen E , Dogan M C, Mendel J M. Application of Cumulants to Array Processing : Direction2Finding in Coherent Signal Environment[C].Annual Asilomar Confer2 ence on Signal ,Systems&Computers ,1994 :633 - 637.
[10] Jeng S S , Okamoto Lin H2P , et al . Multipath Direction Finding with Subspace Smoothing[C]. IEEE ICASSP ,1997 :3485 - 3485.
[11] Feng M,Kammeye H D. Blind Direction of Arrival Estimation Using Antenna Arrays in Multipath Communication Environment[C]. IEEE Globe Com. , 1998 , 1 :165- 170.
[12] V. D.Hwang,andT.Itoh,"An Efficienct Approach for Large-Signal Mod el in gandA nalysiso ft heG aAsM ESFET",IEEEM MT-35,pp396-40 2,A p r. 1 98 7
[13] ANDRZEJ MATERKA AND TOMASZ KACPRZAK“Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics”IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. MTT-33, NO. 2, FEBRUARY 1985
[14]吕奇勇“GaAsFET微波功率放大器的计算机辅助设计”西安电子科技大学硕士论文1998.
[15]余筱静“宽带功率放大器的设计”2004.01
[16] M.Sango,OPitzalis, L.lerner, C.McGuire, P.Wang.and W.Childs“A GaAsMESFET Large-Signal Model for Nonlinear Analysis”1988.IEEE MIT-S Digest.
[17]张伟平沈楚玉“微波场效应管I-V特性模型研究”微波学报1995.09第3期
[18]王卓鹏,高国成,杨卫平等“GaAs MESFET管大信号建模研究”系统工程与电子技术Vol124 ,No17 2002
[19] W.R.Curtice.“Active Device Modeling for GaAs MMICs”MIT-S Workshop.1992
[20]吴龙胜刘佑宝“两种功率MESFET的Ids模型的比较及修正”《电力电子技术》2001年第1期2000.02
[21] Peter B.Kenington“High-Linearity RF Amplifier Design”2000.
[2] Paul M. White, Senior Member, IEEE, and Richard M. Healy“Improved Equivalent Circuit for Determination of MESFET and HEMT Parasitic Capacitances from“Coldfet”Measurements”IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 3, NO. 12, DECEMBER 1993
[3] GILLES DAMBRINE, ALAIN CAPPY, FREDERIC HELIODORE. AND EDOUARD PLAYEZ“A New Method for Determining the FET Small-Signal Equivalent Circuit”IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 36, NO. 7, JULY 1988
[4]廖承恩“微波技术基础”,西安电子科技大学出版社,2004.06 P197-203
[5] Tri T. Ha(美)“固体微波放大器设计”廖承恩议,付君眉校,国防工业出版社。
[6]程书田梁昌洪“利用随机初始值法优化提取微波FET小信号模型参数”西安电子科技大学学报,1998年6月第25卷第3期
[7]陈开周“最优化计算方法”西安电子科技大学出版社
[8] MANFRED BERROTH AND ROLAND BOSCH“Broad-Band Determination of the FET Small-Signal Equivalent Circuit”lEEE TRANSACTIONS ON MICROWAVE TIIFORY AND TECHNlQUES, VOI . 38, NO. 7, JU1.Y 1990
[9] Gênen E , Dogan M C, Mendel J M. Application of Cumulants to Array Processing : Direction2Finding in Coherent Signal Environment[C].Annual Asilomar Confer2 ence on Signal ,Systems&Computers ,1994 :633 - 637.
[10] Jeng S S , Okamoto Lin H2P , et al . Multipath Direction Finding with Subspace Smoothing[C]. IEEE ICASSP ,1997 :3485 - 3485.
[11] Feng M,Kammeye H D. Blind Direction of Arrival Estimation Using Antenna Arrays in Multipath Communication Environment[C]. IEEE Globe Com. , 1998 , 1 :165- 170.
[12] V. D.Hwang,andT.Itoh,"An Efficienct Approach for Large-Signal Mod el in gandA nalysiso ft heG aAsM ESFET",IEEEM MT-35,pp396-40 2,A p r. 1 98 7
[13] ANDRZEJ MATERKA AND TOMASZ KACPRZAK“Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics”IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. MTT-33, NO. 2, FEBRUARY 1985
[14]吕奇勇“GaAsFET微波功率放大器的计算机辅助设计”西安电子科技大学硕士论文1998.
[15]余筱静“宽带功率放大器的设计”2004.01
[16] M.Sango,OPitzalis, L.lerner, C.McGuire, P.Wang.and W.Childs“A GaAsMESFET Large-Signal Model for Nonlinear Analysis”1988.IEEE MIT-S Digest.
[17]张伟平沈楚玉“微波场效应管I-V特性模型研究”微波学报1995.09第3期
[18]王卓鹏,高国成,杨卫平等“GaAs MESFET管大信号建模研究”系统工程与电子技术Vol124 ,No17 2002
[19] W.R.Curtice.“Active Device Modeling for GaAs MMICs”MIT-S Workshop.1992
[20]吴龙胜刘佑宝“两种功率MESFET的Ids模型的比较及修正”《电力电子技术》2001年第1期2000.02
[21] Peter B.Kenington“High-Linearity RF Amplifier Design”2000.