微波非线性电路建模方法的研究
摘要
众所周知,微波功率放大器是工作在大信号状态下,呈现非线性特性,为了进行微波功率放大器的最优设计,必须建立精确的大信号非线性电路和元件模型。本文主要的研究内容是对从小信号建模为基础进行大功率晶体管非线性建模。目的是最终建立GaAsFET大信号非线性电路模型。
本文主要对GaAsFET建模方法进行了学习和研究,提出了一种电路提取S参数的测试方法。在已经建立了小信号模型的基础上,通过测量GaAsFET的I-V特性,精确完成GaAsFET大信号非线性模型的建立。建模完成后用谐波平衡法进行分析,验证了模型能够准确的描述晶体管的大信号特性。在总结传统非线性表征方法的前提下,为了弥补不足,提出一种新的非线性表征方法——非线性散射函数,并对其性质进行了讨论。
It is known to us all that microwave power amplifiers under large-signal condition present behaviors with nonlinearity. In order to optimize the microwave power amplifiers, we must construct large-signal nonlinear cicuits and device models. The goal of this paper is to implement the nonlinear modeling of power GaAs FET based on the small-signal model.
In order to compensate the traditional nonlinear characteristics, the new method of depicting nonlinearity, nonlinear scattering function, is brought up; meanwhile its characteristics are discussed. After researching on the method of modeling GaAs FET, we introduce a circuital mothod of extracting S parameters. Relied on the existed small-signal model, large-signal nonlinear model of GaAs FET is then constructed via the measurements of I-V curves of GaAs FET. Finally we validate that this model can be used to describe the large-signal characteristics of power transistors with harmonic balance method.
本文主要对GaAsFET建模方法进行了学习和研究,提出了一种电路提取S参数的测试方法。在已经建立了小信号模型的基础上,通过测量GaAsFET的I-V特性,精确完成GaAsFET大信号非线性模型的建立。建模完成后用谐波平衡法进行分析,验证了模型能够准确的描述晶体管的大信号特性。在总结传统非线性表征方法的前提下,为了弥补不足,提出一种新的非线性表征方法——非线性散射函数,并对其性质进行了讨论。
It is known to us all that microwave power amplifiers under large-signal condition present behaviors with nonlinearity. In order to optimize the microwave power amplifiers, we must construct large-signal nonlinear cicuits and device models. The goal of this paper is to implement the nonlinear modeling of power GaAs FET based on the small-signal model.
In order to compensate the traditional nonlinear characteristics, the new method of depicting nonlinearity, nonlinear scattering function, is brought up; meanwhile its characteristics are discussed. After researching on the method of modeling GaAs FET, we introduce a circuital mothod of extracting S parameters. Relied on the existed small-signal model, large-signal nonlinear model of GaAs FET is then constructed via the measurements of I-V curves of GaAs FET. Finally we validate that this model can be used to describe the large-signal characteristics of power transistors with harmonic balance method.
引文
[1] Paul M. White. Senior Member. IEEE. and Richard M. Healy“Improved Equivalent Circuit for Determination of MESFET and HEMT Parasitic Capacitances from“Coldfet”Measurements”IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 3. NO. 12, DECEMBER 1993.
[2] Feng M,Kammeye H D. Blind Direction of Arrival Estimation Using Antenna Arrays in Multipath Communication Environment[C]. IEEE Globe Com. , 1998 . 1 :165- 170.
[3] M.Sango OPitzalis L.lerner. C.McGuire. P.Wang.and W.Childs“A GaAsMESFET Large-Signal Model for Nonlinear Analysis”1988.IEEE MIT-S Digest.
[4] Jeng S S . Okamoto Lin H2P . et al . Multipath Direction Finding with Subspace Smoothing[C]. IEEE ICASSP .1997 :3485 - 3485.
[5] GILLES DAMBRINE. ALAIN CAPPY. FREDERIC HELIODORE. AND EDOUARD PLAYEZ“A New Method for Determining the FET Small-Signal Equivalent Circuit”IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. VOL. 36. NO. 7, JULY 1988.
[6] MANFRED BERROTH AND ROLAND BOSCH“Broad-Band Determination of the FET Small-Signal Equivalent Circuit”lEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNlQUES, VOI . 38. NO. 7, JU1.Y 1990.
[7] Mccormack Angus J , Smith D H. An Improved GaAs MESFETModel for Spice[J ]. IEEE Trans . MTT. 1990 . 38(6) : 822 - 824.
[8] Curtice Walter R. GaAs MESFETModeling and Nonlnear CAD[J ]. IEEE Trans . MTT, 1988 . 36(2) : 220 - 230.
[9] Matthias Weiss . Dimitris Pavlidis. The Influence of Device Physical Parameters on HEMTLarge - Signal[J ]. IEEE Trans . MTT. . 1988 . 36(2) : 249– 257.
[10] V. D.Hwang,andT.Itoh."An Efficienct Approach for Large-Signal Mod el in gandA nalysiso ft heG aAsM ESFET",IEEEM MT-35 .A p r. 1987: 396-402.
[11] Gênen E .Dogan M C.Mendel J M. Application of Cumulants to Array Processing : Direction2Finding in Coherent Signal Environment[C].Annual Asilomar Confer2 ence on Signal .Systems&Computers .1994 :633 - 637.
[12] ANDRZEJ MATERKA AND TOMASZ KACPRZAK“Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics”IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. VOL. MTT-33. NO. 2. FEBRUARY 1985.
[13] Statz H, Newman P. Smith I.W. et al. GaAs FET Device and Circuit Simulation in SPICE. IEEE Trans ED.1987. ED-34(2):160
[14] Jan Verspecht. Dominique Schreurs. Recent Advances in the Measurement and Black-Box Modelling of High-Frequency Components. GAAS99 Conference Proceedings. pp.387-392. October 1999.
[15] J.Verspect and P.Van Esch. Accurately Characterizing Hard Nonlinear Behavior of Microwave Components With The Nonlinear Network Measurement Systems: Introducing `Nonlinear scattering fucntions'. In Proceedings of 5th international workshop on Integrated Nonlinear Microwave and Millimeter Circuits. INMMC. Oct.1-Oct2 .1998.
[16] J.Verspecht et al. Accurate on wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal ports of a nonlinear microwave device. IEEE Trans on MTT-S Int. Microwave Symp. Digest.1995. pp.1029-1032.
[17] Jan Verspecht. Black Box Modelling of Power Transistors in the Frequency Domain. Conference Record of the INMMC 1996 Workshop.1996.
[18]廖承恩.微波技术基础.西安电子科技大学出版社. 2004.06
[19] TriT.著.廖承恩译.固体微波放大器设计.国防工业出版社.1988.
[20]程书田.梁昌洪.利用随机初始值法优化提取微波FET小信号模型参数.西安电子科技大学学报.1998年6月第25卷第3期.
[21]陈开周.最优化计算方法.西安电子科技大学出版社.
[22]吕奇勇. GaAsFET微波功率放大器的计算机辅助设计.西安电子科技大学硕士论文. 1998.
[23]程书田.赵希明一种优化微波FET小信号模型的新方法.现代雷达.1996.04,第三期.
[24]张伟平.沈楚玉.微波场效应管I-V特性模型研究.微波学报. 1995.09第3期.
[25]王卓鹏.高国成.杨卫平等.GaAs MESFET管大信号建模研究.系统工程与电子技术2002.
[26]王家礼.微波电路CAA与CAD.西安:西安电子科技大学出版社.2003
[27]张祖舜.沈灿.微波非线性电路全频域谐波平衡分析.方程的建立与算术运算法电子学报1994.12.
[28]张祖舜.沈灿.用算术运算法分析多频率激励微波非线性电路.电子学报.1997.2.
[29]汪连栋.袁乃昌.王国玉GaAs MESFET微波非线性电路全频域谐波平衡分析,雷达与对抗.1999.2.
[30]林茂六.于海雁.一种新的大信号射频功率器件建模方法.电子学报.2003.9
[31]林茂六.许洪光.超越S参数的大信号射频网络分析测试技术概述.测控技术.2003.第22卷.
[2] Feng M,Kammeye H D. Blind Direction of Arrival Estimation Using Antenna Arrays in Multipath Communication Environment[C]. IEEE Globe Com. , 1998 . 1 :165- 170.
[3] M.Sango OPitzalis L.lerner. C.McGuire. P.Wang.and W.Childs“A GaAsMESFET Large-Signal Model for Nonlinear Analysis”1988.IEEE MIT-S Digest.
[4] Jeng S S . Okamoto Lin H2P . et al . Multipath Direction Finding with Subspace Smoothing[C]. IEEE ICASSP .1997 :3485 - 3485.
[5] GILLES DAMBRINE. ALAIN CAPPY. FREDERIC HELIODORE. AND EDOUARD PLAYEZ“A New Method for Determining the FET Small-Signal Equivalent Circuit”IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. VOL. 36. NO. 7, JULY 1988.
[6] MANFRED BERROTH AND ROLAND BOSCH“Broad-Band Determination of the FET Small-Signal Equivalent Circuit”lEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNlQUES, VOI . 38. NO. 7, JU1.Y 1990.
[7] Mccormack Angus J , Smith D H. An Improved GaAs MESFETModel for Spice[J ]. IEEE Trans . MTT. 1990 . 38(6) : 822 - 824.
[8] Curtice Walter R. GaAs MESFETModeling and Nonlnear CAD[J ]. IEEE Trans . MTT, 1988 . 36(2) : 220 - 230.
[9] Matthias Weiss . Dimitris Pavlidis. The Influence of Device Physical Parameters on HEMTLarge - Signal[J ]. IEEE Trans . MTT. . 1988 . 36(2) : 249– 257.
[10] V. D.Hwang,andT.Itoh."An Efficienct Approach for Large-Signal Mod el in gandA nalysiso ft heG aAsM ESFET",IEEEM MT-35 .A p r. 1987: 396-402.
[11] Gênen E .Dogan M C.Mendel J M. Application of Cumulants to Array Processing : Direction2Finding in Coherent Signal Environment[C].Annual Asilomar Confer2 ence on Signal .Systems&Computers .1994 :633 - 637.
[12] ANDRZEJ MATERKA AND TOMASZ KACPRZAK“Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics”IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. VOL. MTT-33. NO. 2. FEBRUARY 1985.
[13] Statz H, Newman P. Smith I.W. et al. GaAs FET Device and Circuit Simulation in SPICE. IEEE Trans ED.1987. ED-34(2):160
[14] Jan Verspecht. Dominique Schreurs. Recent Advances in the Measurement and Black-Box Modelling of High-Frequency Components. GAAS99 Conference Proceedings. pp.387-392. October 1999.
[15] J.Verspect and P.Van Esch. Accurately Characterizing Hard Nonlinear Behavior of Microwave Components With The Nonlinear Network Measurement Systems: Introducing `Nonlinear scattering fucntions'. In Proceedings of 5th international workshop on Integrated Nonlinear Microwave and Millimeter Circuits. INMMC. Oct.1-Oct2 .1998.
[16] J.Verspecht et al. Accurate on wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal ports of a nonlinear microwave device. IEEE Trans on MTT-S Int. Microwave Symp. Digest.1995. pp.1029-1032.
[17] Jan Verspecht. Black Box Modelling of Power Transistors in the Frequency Domain. Conference Record of the INMMC 1996 Workshop.1996.
[18]廖承恩.微波技术基础.西安电子科技大学出版社. 2004.06
[19] TriT.著.廖承恩译.固体微波放大器设计.国防工业出版社.1988.
[20]程书田.梁昌洪.利用随机初始值法优化提取微波FET小信号模型参数.西安电子科技大学学报.1998年6月第25卷第3期.
[21]陈开周.最优化计算方法.西安电子科技大学出版社.
[22]吕奇勇. GaAsFET微波功率放大器的计算机辅助设计.西安电子科技大学硕士论文. 1998.
[23]程书田.赵希明一种优化微波FET小信号模型的新方法.现代雷达.1996.04,第三期.
[24]张伟平.沈楚玉.微波场效应管I-V特性模型研究.微波学报. 1995.09第3期.
[25]王卓鹏.高国成.杨卫平等.GaAs MESFET管大信号建模研究.系统工程与电子技术2002.
[26]王家礼.微波电路CAA与CAD.西安:西安电子科技大学出版社.2003
[27]张祖舜.沈灿.微波非线性电路全频域谐波平衡分析.方程的建立与算术运算法电子学报1994.12.
[28]张祖舜.沈灿.用算术运算法分析多频率激励微波非线性电路.电子学报.1997.2.
[29]汪连栋.袁乃昌.王国玉GaAs MESFET微波非线性电路全频域谐波平衡分析,雷达与对抗.1999.2.
[30]林茂六.于海雁.一种新的大信号射频功率器件建模方法.电子学报.2003.9
[31]林茂六.许洪光.超越S参数的大信号射频网络分析测试技术概述.测控技术.2003.第22卷.