磁控溅射与PECVD方法制备SiGe-SiO_2薄膜
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摘要
近年来,随着太阳能技术的蓬勃发展,人们在日常生活中太阳能电池应用的领域越来越广泛,而且目前应用最多的就是硅电池。而如何增加太阳能电池板的光透过率,增加光电转换效率成为目前研究的热门话题。
二氧化硅具有结构简单,性能稳定,成本低廉,而且很适合做光学增透膜。锗比硅的光谱吸收范围要宽,色散小,折射率高而且在红外波段透过率也比较好。所以在太阳能硅电池板上镀上这两种成份,能够有效地提高太阳能电池板的光透过率以及增加其光电转换效率。
本文主要研究了利用磁控溅射与等离子体增强化学气相沉积方法制备SiGe-SiO2薄膜。对制备的工艺步骤进行了描述,对实验的工艺进行了探索,对实验的结果进行了测试分析。
本文首先介绍了磁控溅射与等离子体增强化学气相沉积技术的发展状况,阐述了用磁控溅射与等离子体增强化学气相沉积技术制备SiGe-SiO2薄膜的基本原理,设备结构和基本的工艺流程,采用不同的实验参数进行了薄膜沉积。
对采用不同实验参数沉积得到的SiGe-SiO2光学增透薄膜材料,用X射线荧光光谱仪(EDX),傅里叶红外光谱仪(FTIR)及俄歇电子能谱(AES)等方法对材料的相组成分,薄膜厚度以及薄膜的光透过率等特征进行了研究。分析了本底真空,溅射气压,沉积时间,氧气和压气流量等实验参数与材料特征之间的关系。
Summary in recent years, with the development of solar technology, people in their daily life in the solar cell applications more and more widely, but most of the current application is the Silicon cells. And how to increase the solar panels light transmittance, increase the efficiency of the photovoltaic conversion into current research.
Silica has a simple structure, stable performance, low cost, but also very suitable for optical anti-reflection coating. Ge absorption than silicon spectrum, the range is wide, refractive index high dispersion small and in the infrared band transmittance is relatively good. So Solar Silicon cell board plating on these two ingredients that can effectively increase the solar panels light transmittance as well as increase its photoelectric conversion efficiency.
This article examines the use of magnetron sputtering and plasma enhanced chemical vapor deposition SiGe-SiO2 films. On the preparation of process steps are described, on the probing of the process, on the results of the analysis of the test.
This article first introduces the magnetron sputtering and plasma enhanced chemical vapor deposition technology development, elaborated with magnetron sputtering and plasma enhanced chemical vapor deposition SiGe-SiO2 films fundamentals, device structures and the basic process flow, using different experimental parameters for thin film deposition.
Experiment with different parameters deposition of SiGe-SiO2 optical antireflection films, x-ray fluorescence spectroscopy (EDX), Fourier Transform infrared spectroscopy (FTIR) and Auger electron spectroscopy (AES), and so on material composition, thickness, and thin film optical transmittance characteristics. Analysis of the background, vacuum, sputtering deposition time pressure, oxygen and compressed air flow experiment parameters and material characteristics.
二氧化硅具有结构简单,性能稳定,成本低廉,而且很适合做光学增透膜。锗比硅的光谱吸收范围要宽,色散小,折射率高而且在红外波段透过率也比较好。所以在太阳能硅电池板上镀上这两种成份,能够有效地提高太阳能电池板的光透过率以及增加其光电转换效率。
本文主要研究了利用磁控溅射与等离子体增强化学气相沉积方法制备SiGe-SiO2薄膜。对制备的工艺步骤进行了描述,对实验的工艺进行了探索,对实验的结果进行了测试分析。
本文首先介绍了磁控溅射与等离子体增强化学气相沉积技术的发展状况,阐述了用磁控溅射与等离子体增强化学气相沉积技术制备SiGe-SiO2薄膜的基本原理,设备结构和基本的工艺流程,采用不同的实验参数进行了薄膜沉积。
对采用不同实验参数沉积得到的SiGe-SiO2光学增透薄膜材料,用X射线荧光光谱仪(EDX),傅里叶红外光谱仪(FTIR)及俄歇电子能谱(AES)等方法对材料的相组成分,薄膜厚度以及薄膜的光透过率等特征进行了研究。分析了本底真空,溅射气压,沉积时间,氧气和压气流量等实验参数与材料特征之间的关系。
Summary in recent years, with the development of solar technology, people in their daily life in the solar cell applications more and more widely, but most of the current application is the Silicon cells. And how to increase the solar panels light transmittance, increase the efficiency of the photovoltaic conversion into current research.
Silica has a simple structure, stable performance, low cost, but also very suitable for optical anti-reflection coating. Ge absorption than silicon spectrum, the range is wide, refractive index high dispersion small and in the infrared band transmittance is relatively good. So Solar Silicon cell board plating on these two ingredients that can effectively increase the solar panels light transmittance as well as increase its photoelectric conversion efficiency.
This article examines the use of magnetron sputtering and plasma enhanced chemical vapor deposition SiGe-SiO2 films. On the preparation of process steps are described, on the probing of the process, on the results of the analysis of the test.
This article first introduces the magnetron sputtering and plasma enhanced chemical vapor deposition technology development, elaborated with magnetron sputtering and plasma enhanced chemical vapor deposition SiGe-SiO2 films fundamentals, device structures and the basic process flow, using different experimental parameters for thin film deposition.
Experiment with different parameters deposition of SiGe-SiO2 optical antireflection films, x-ray fluorescence spectroscopy (EDX), Fourier Transform infrared spectroscopy (FTIR) and Auger electron spectroscopy (AES), and so on material composition, thickness, and thin film optical transmittance characteristics. Analysis of the background, vacuum, sputtering deposition time pressure, oxygen and compressed air flow experiment parameters and material characteristics.
引文
[1]徐万劲.磁控溅射技术进展及应用.综述与专论.2005,5：1-5,6：6-9
[2]G Brauer, M Ruske, J Szczyrbowski et al. Mid frequency spurtering with Twin Maga a survey of recent results. Vac uum,2001,51(4):655-659
[3]Belkind, A. Freilich, G.SOng, Z. Zhao, R. Sohol, E. Bixon. Mid-frequency reactive sputtering of dielectrics:A1203. Surface and Coatings Technology.2003,174-175:88-93
[4]Jin—Hyo Boo. High-rate deposition of copper thin films usingnewly designed high-power magnetron sputering source. Surface & Coatings Technology.2004.188-189:721-727
[5]郑伟涛.薄膜材料与薄膜技术.化学工业出版社,2008
[6]williams M J, Wang C, Lucovsky G. Photoconductivity and Optical Stability Of Intrinsic pc-Si Films Formed by Remote Plasma-evhaaced chemical Vapor Deposition [J]. J. Non-Crys. Solids,2000,137-138: 737
[7]孟庆巨,刘海波,孟庆辉.半导体器件物理.北京：科学出版社,2005
[8]Peter Van Zant,韩正生,赵树武.芯片制造-半导体工艺制程实用教程.北京：电子工业出版社,2010：23-24
[9]李章春.太阳能割草机总体及动力能源系统设计与控制技术研究.电工技术.20008
[10]贾士亮,张维佳,刘浩,张心强,郭卫,吴惊.纳米硅薄膜太阳能电池的绒面结构研究.电子元件与材料.2009,28(3)：31-33
[11]卢志安,迟晓红,赵国华. 非晶硅薄膜太阳能电池生产简述.知识讲座.2009
[12]张立明,李海峰,黄勇,张厚兴,万之坚,许颖,王文静. 多晶硅薄膜太阳能电池的衬底材料和制备工艺.稀有金属材料与工程.2005,34(1)：464-466
[13]豆小秋,吕建.非晶硅太阳电池Ⅰ-V特性的研究.太阳能技术与产品,2009
[14]田民波.薄膜技术与薄膜材料.清华大学出版社,2006
[15]杨邦朝,王文生.薄膜物理与技术.成都：电子科技大学出版社,2000
[16]王辉,杨型健,刘淑平.磁控溅射SiGe异质结的薄膜分析.红外与激光工程.2007年8月,36(4)
[17]叶光,林志贤,郭太良.射频磁控溅射二氧化硅薄膜的工艺探讨.龙岩师专学报.2002年12月,20(6)
[18]Emil V. Jelenkovic, K. Y. Tong, W. Y. Cheung, S. P. Wong. B. R. Shi, G. K. H. Pang. SiGe-Si junctions with boron-doped SiGe films deposited by co-sputtering. Solid-State Electronics.50 (2006) 199-204.
[19]Emil V. Jelenkovic, Milan M. Jevtic, K. Y. Tong, G. K. H. Pang. On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering. Materials Science in Semiconductor Processing.10 (2007) 143-149.
[20]S. Tanemura, L. Miao T. Watanabe, M. Imaoka, M. Tanemura, Y. Mori. Preparation of five-layered Si/SixGe nano-films by RF helicon magnetron sputtering. Applied Surface Science.254 (2007) 308-311.
[21]Choi Suk ho, Han Sung chul, Hwang Sun tae. Defect-related photoluminescence and Raman studies on the growth of Ge nanocrystals during annealing of Ge- -implanted SiO2 film. Thin Solid Films,2002, 413:177-180
[22]Ghislotti G, Nielsen B. Asoka·Kumar P, et al. Effect of different preparation conditions on light emission from silicon implanted SiO2 layers. J Appl Phys,2002,79:8660-8666.
[23]王福贞,马文存.气相沉积应用技术.机械工业出版社,2007
[24]亢拮,黎威志,袁凯,蒋亚东PECVD淀积Si02薄膜工艺研究.2010,1
[25]LU Wan-bing, YU Wei,WU Li-ping, CUI Shuang-kui, FU Guang-sheng. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition. Chinese Journal of Aeronautics.19(2006)S96-S101.
[26]DA Xiao-li, XU Chen, GUAN Bao-lu, SHEN Guang-d. Stress Controlled Silicon Nitride Thin Film Deposited by Plasma Enhanced Chemical Vapour Deposition. Semiconducto Photonics and Technology. May 2007, Total No.48.
[27]ZHOU BingQing, ZHU MeiFang, LIU FengZhen, LIU JinLong, ZHOU YuQin, LI GuoHua, DING Kun. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposit ion(PECVD). Science in China Series E:Technological Sciences.2008
[28]ZHANG Xiao-dan, ZHU Feng, ZHAO Ying, SUN Jian, WEI Chang-chun, HOU Guo-fu, GENG Xin-hua, XIONG Shao-zhen. Microcrystalline Silicon Materials and Solar Cells Prepared by VHF-PECVD. Semiconductor Photonics and Technology. Aug.2004 Total No.37
[29]Tang Longjuan, Zhu Yinfang, Yang Jinling, Li Yan, Zhou Wei, Xie Jing, Liu Yunfei, Yang Fuhua. Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film. Journal of Semiconductors. Vol.30, No.9, September 2009
[30]M. Carrada, A. Zerga, M. Amann etl al. Structural and optical properties of high denstiy Si—ncs synthesized in SiNx:H by remote PECVD and annealing[J]. Materials Science and Engineering B,2008, (147):218-221
[31]Armin G Aberle. Overview on SiN surface passivation of crystalline silicon solar cells. Solar Energy Materials and Solar Cells,2001, (65):240-243
[2]G Brauer, M Ruske, J Szczyrbowski et al. Mid frequency spurtering with Twin Maga a survey of recent results. Vac uum,2001,51(4):655-659
[3]Belkind, A. Freilich, G.SOng, Z. Zhao, R. Sohol, E. Bixon. Mid-frequency reactive sputtering of dielectrics:A1203. Surface and Coatings Technology.2003,174-175:88-93
[4]Jin—Hyo Boo. High-rate deposition of copper thin films usingnewly designed high-power magnetron sputering source. Surface & Coatings Technology.2004.188-189:721-727
[5]郑伟涛.薄膜材料与薄膜技术.化学工业出版社,2008
[6]williams M J, Wang C, Lucovsky G. Photoconductivity and Optical Stability Of Intrinsic pc-Si Films Formed by Remote Plasma-evhaaced chemical Vapor Deposition [J]. J. Non-Crys. Solids,2000,137-138: 737
[7]孟庆巨,刘海波,孟庆辉.半导体器件物理.北京：科学出版社,2005
[8]Peter Van Zant,韩正生,赵树武.芯片制造-半导体工艺制程实用教程.北京：电子工业出版社,2010：23-24
[9]李章春.太阳能割草机总体及动力能源系统设计与控制技术研究.电工技术.20008
[10]贾士亮,张维佳,刘浩,张心强,郭卫,吴惊.纳米硅薄膜太阳能电池的绒面结构研究.电子元件与材料.2009,28(3)：31-33
[11]卢志安,迟晓红,赵国华. 非晶硅薄膜太阳能电池生产简述.知识讲座.2009
[12]张立明,李海峰,黄勇,张厚兴,万之坚,许颖,王文静. 多晶硅薄膜太阳能电池的衬底材料和制备工艺.稀有金属材料与工程.2005,34(1)：464-466
[13]豆小秋,吕建.非晶硅太阳电池Ⅰ-V特性的研究.太阳能技术与产品,2009
[14]田民波.薄膜技术与薄膜材料.清华大学出版社,2006
[15]杨邦朝,王文生.薄膜物理与技术.成都：电子科技大学出版社,2000
[16]王辉,杨型健,刘淑平.磁控溅射SiGe异质结的薄膜分析.红外与激光工程.2007年8月,36(4)
[17]叶光,林志贤,郭太良.射频磁控溅射二氧化硅薄膜的工艺探讨.龙岩师专学报.2002年12月,20(6)
[18]Emil V. Jelenkovic, K. Y. Tong, W. Y. Cheung, S. P. Wong. B. R. Shi, G. K. H. Pang. SiGe-Si junctions with boron-doped SiGe films deposited by co-sputtering. Solid-State Electronics.50 (2006) 199-204.
[19]Emil V. Jelenkovic, Milan M. Jevtic, K. Y. Tong, G. K. H. Pang. On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering. Materials Science in Semiconductor Processing.10 (2007) 143-149.
[20]S. Tanemura, L. Miao T. Watanabe, M. Imaoka, M. Tanemura, Y. Mori. Preparation of five-layered Si/SixGe nano-films by RF helicon magnetron sputtering. Applied Surface Science.254 (2007) 308-311.
[21]Choi Suk ho, Han Sung chul, Hwang Sun tae. Defect-related photoluminescence and Raman studies on the growth of Ge nanocrystals during annealing of Ge- -implanted SiO2 film. Thin Solid Films,2002, 413:177-180
[22]Ghislotti G, Nielsen B. Asoka·Kumar P, et al. Effect of different preparation conditions on light emission from silicon implanted SiO2 layers. J Appl Phys,2002,79:8660-8666.
[23]王福贞,马文存.气相沉积应用技术.机械工业出版社,2007
[24]亢拮,黎威志,袁凯,蒋亚东PECVD淀积Si02薄膜工艺研究.2010,1
[25]LU Wan-bing, YU Wei,WU Li-ping, CUI Shuang-kui, FU Guang-sheng. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition. Chinese Journal of Aeronautics.19(2006)S96-S101.
[26]DA Xiao-li, XU Chen, GUAN Bao-lu, SHEN Guang-d. Stress Controlled Silicon Nitride Thin Film Deposited by Plasma Enhanced Chemical Vapour Deposition. Semiconducto Photonics and Technology. May 2007, Total No.48.
[27]ZHOU BingQing, ZHU MeiFang, LIU FengZhen, LIU JinLong, ZHOU YuQin, LI GuoHua, DING Kun. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposit ion(PECVD). Science in China Series E:Technological Sciences.2008
[28]ZHANG Xiao-dan, ZHU Feng, ZHAO Ying, SUN Jian, WEI Chang-chun, HOU Guo-fu, GENG Xin-hua, XIONG Shao-zhen. Microcrystalline Silicon Materials and Solar Cells Prepared by VHF-PECVD. Semiconductor Photonics and Technology. Aug.2004 Total No.37
[29]Tang Longjuan, Zhu Yinfang, Yang Jinling, Li Yan, Zhou Wei, Xie Jing, Liu Yunfei, Yang Fuhua. Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film. Journal of Semiconductors. Vol.30, No.9, September 2009
[30]M. Carrada, A. Zerga, M. Amann etl al. Structural and optical properties of high denstiy Si—ncs synthesized in SiNx:H by remote PECVD and annealing[J]. Materials Science and Engineering B,2008, (147):218-221
[31]Armin G Aberle. Overview on SiN surface passivation of crystalline silicon solar cells. Solar Energy Materials and Solar Cells,2001, (65):240-243