非晶硅薄膜太阳能电池材料PECVD关键技术研究
摘要
等离子体增强化学气相沉积(PECVD)是制备非晶硅太阳能电池a-Si:H薄膜材料应用最广泛的技术。非晶硅材料在可见光内有较高的吸收系数,原材料来源广泛,可实现低成本的大面积薄膜沉积,使之具有有广阔的应用前景。然而沉积高质量的非晶硅薄膜材料对PECVD设备技术性能要求很高,其中关键技术包括系统的反应室内电场、温度场、气流场以及辅助磁场的分布。
本文采用计算机数值模拟的方法对PECVD的关键技术逐项做了分析,首先建立平板电极模型,研究了电源频率,接入点及电极尺寸对电场分布的影响;然后对整体加热和基片底座加热两种温度场及“极板喷淋”和“穿堂风”两种进气方式的气流分布模拟计算;
结果表明射频电源频率越高,电极面积越大电场非均匀性也越大;
整体加热基片表面温度很均匀,基片座加热方式在边缘处温度有所下降。“极板喷淋”布气方式,中心处压力高,边缘处压力低;气体流速则是中心处流速小,边缘流速大。随着进气流量的增加基片表面压力分布和气流速度的不均匀性呈线性增加;“穿堂风”进气方式,电极板区间压力梯度从进气口指向出气口线性减小,气流速度整体较均匀波动小。
对辅助PECVD的均匀磁场和磁镜场模拟分析,优化设计了螺线管的缠绕方式,得到了均匀磁场。并讨论了磁镜场磁镜比的调节方式,获得了这两种磁场分布规律。
通过各场量分布特性的研究,提出PECVD主要设计方案:室壁整体加热,选用13.56MHz射频电源,加装无侧边屏蔽罩的极板喷淋进气方式,极板间距40mm左右,能够获得较好的综合性能参数。
其研究结果为制备a-Si:H薄膜材料的PECVD技术应用提供了理论依据。
Plasma-Enhanced Chemical Vapor Deposition (PECVD) is the most widely used technology to preparation of a-Si: H amorphous thin-film solar cell’s thin film. Because of high visible light absorption coefficient, Raw material origin is widespread, and large area thin film deposition with low cost enables the amorphous thin-film solar cell to have the broad application prospect. Then it requires high technical performance to PECVD depositing the high grade amorphous silicon membranous material. And the key technologies in system's reaction chamber include electric field, temperature field, flow field and the auxiliary magnetic field distribution.
This paper used the computer numerical simulation method to analysis the items to the PECVD key technologies. First, establish plate electrode model, Study the influence of power frequency, feeding point and electrode size. Then whole heating and substrateholder heating styles two kind of temperature fields were Simulation calculation, as well as“electrode spraying”and“cross-ventilation”two kinds of inlet gas distribution mode.
The results show that the higher frequency, the larger electrode area obtained the more obvious non-uniformity of the electric field.
The substrate surface temperature is uniform with whole heating style, while substrate edge temperature declines with substrateholder heating style.
There is high gas pressure in the central part of electrodes and low pressure in the edge part by“electrode spraying”style. And there is low gas flowrate in the central part of electrodes and low flowrate in the edge part. With the increase of gas flow into, the substrate surface pressure distribution and flow velocity uniformity increase linearly. The pressure reduces gradually from the air inlet to the air outlet by“cross-ventilation”style gas inlet, the gas flow is wholly uniform.
Solenoid magnetic field and magnetic-mirror field were analysed, the existing magnetic field was improved by designing a solenoid magnetic field. Analysis both the radial and axial magnetic mirror confined plasma produced by the magnetic field, as well as the magnetic mirror ratio adjusting method. The distributions of two kinds of magnetic fields were obtained.
Through the research of field distribution characteristics, the PECVD main design was proposed: whole heating style, 13.56MHz RF power, With no side shields of plate spray intake,“electrode spraying”gas inlet style, electrode plate spacing is about 40mm, good performance parameters can be achieved.
This study provides a theoretical basis on the preparation of a-Si: H thin films of PECVD technology.
本文采用计算机数值模拟的方法对PECVD的关键技术逐项做了分析,首先建立平板电极模型,研究了电源频率,接入点及电极尺寸对电场分布的影响;然后对整体加热和基片底座加热两种温度场及“极板喷淋”和“穿堂风”两种进气方式的气流分布模拟计算;
结果表明射频电源频率越高,电极面积越大电场非均匀性也越大;
整体加热基片表面温度很均匀,基片座加热方式在边缘处温度有所下降。“极板喷淋”布气方式,中心处压力高,边缘处压力低;气体流速则是中心处流速小,边缘流速大。随着进气流量的增加基片表面压力分布和气流速度的不均匀性呈线性增加;“穿堂风”进气方式,电极板区间压力梯度从进气口指向出气口线性减小,气流速度整体较均匀波动小。
对辅助PECVD的均匀磁场和磁镜场模拟分析,优化设计了螺线管的缠绕方式,得到了均匀磁场。并讨论了磁镜场磁镜比的调节方式,获得了这两种磁场分布规律。
通过各场量分布特性的研究,提出PECVD主要设计方案:室壁整体加热,选用13.56MHz射频电源,加装无侧边屏蔽罩的极板喷淋进气方式,极板间距40mm左右,能够获得较好的综合性能参数。
其研究结果为制备a-Si:H薄膜材料的PECVD技术应用提供了理论依据。
Plasma-Enhanced Chemical Vapor Deposition (PECVD) is the most widely used technology to preparation of a-Si: H amorphous thin-film solar cell’s thin film. Because of high visible light absorption coefficient, Raw material origin is widespread, and large area thin film deposition with low cost enables the amorphous thin-film solar cell to have the broad application prospect. Then it requires high technical performance to PECVD depositing the high grade amorphous silicon membranous material. And the key technologies in system's reaction chamber include electric field, temperature field, flow field and the auxiliary magnetic field distribution.
This paper used the computer numerical simulation method to analysis the items to the PECVD key technologies. First, establish plate electrode model, Study the influence of power frequency, feeding point and electrode size. Then whole heating and substrateholder heating styles two kind of temperature fields were Simulation calculation, as well as“electrode spraying”and“cross-ventilation”two kinds of inlet gas distribution mode.
The results show that the higher frequency, the larger electrode area obtained the more obvious non-uniformity of the electric field.
The substrate surface temperature is uniform with whole heating style, while substrate edge temperature declines with substrateholder heating style.
There is high gas pressure in the central part of electrodes and low pressure in the edge part by“electrode spraying”style. And there is low gas flowrate in the central part of electrodes and low flowrate in the edge part. With the increase of gas flow into, the substrate surface pressure distribution and flow velocity uniformity increase linearly. The pressure reduces gradually from the air inlet to the air outlet by“cross-ventilation”style gas inlet, the gas flow is wholly uniform.
Solenoid magnetic field and magnetic-mirror field were analysed, the existing magnetic field was improved by designing a solenoid magnetic field. Analysis both the radial and axial magnetic mirror confined plasma produced by the magnetic field, as well as the magnetic mirror ratio adjusting method. The distributions of two kinds of magnetic fields were obtained.
Through the research of field distribution characteristics, the PECVD main design was proposed: whole heating style, 13.56MHz RF power, With no side shields of plate spray intake,“electrode spraying”gas inlet style, electrode plate spacing is about 40mm, good performance parameters can be achieved.
This study provides a theoretical basis on the preparation of a-Si: H thin films of PECVD technology.
引文
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[7]钟迪生,硅薄膜太阳能电池研究的进展[J].应用光学.2001,22(3):34-37
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[19] M.Yamazaki,H.Ohagi,Jpn. Optical Degradation of a-Si:H films with Different Morphology [J].Appl.Phys.,27,L1739,1988
[20] W.A.Nevin,H.Yamagishi and Y.Tawada, Improvement of the stability of hydrogenated amorphous silicon films and solar cells by light pulse treatment [J]Appl.Phys.Lett.54,1226,1989
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[22]陈建明非晶硅薄膜太阳能电池的新工艺及理论模拟[D],复旦大学硕士学位论文,2005
[23]李定等,等离子体物理学[M],高等教育出版社,2006.5
[24]菅井秀郎编著,等离子体电子工程学[M],科学出版社,2002
[25]王群善,曹秀吉编著.工程物理现代工程技术物理基础.辽宁科学技术出版社, 1993.12.
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[27]金佑民,樊友三,低温等离子体物理基础[M],清华大学出版社1983
[28] Aharon Inspektor-Koren, principles of Plasma-activated Chemical Vapor Deposition [J]. Surface and Coatings Technology, 1987,33:31-48
[29]魏合林,刘祖黎,磁场对直流辉光放电阴极鞘层中电子输运过程的影响[J],物理学报,1995.2
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