电子元器件低频电噪声测试技术及应用研究
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摘要
电子元器件低频电噪声是载流子微观运动的表现，其精确测量可为噪声特性、产生机理研究及其分析应用奠定基础。通过噪声测试能够有效验证电子元器件中与载流子输运相关的基础理论，同时能促进噪声现象的物理本源探索。电噪声的应用是噪声机理和噪声测试技术研究的目的之一。通过电子元器件缺陷、应力损伤、工艺水平、质量及可靠性等与低频电噪声的相关性研究，可发展基于噪声的表征方法，应用于元器件优化设计、工艺控制、质量评定和可靠性筛选等方面。
本文系统地研究了电子元器件低频电噪声检测技术与应用方法。在测试技术方面，研究了偏置技术、低噪声放大技术、数据采集技术、噪声参数提取技术与测试误差分析方法。基于电子元器件低频噪声特性和相关测试技术，建立电子元器件低频电噪声测试系统。应用所研制的噪声测试系统，测试并分析了不同类型电子元器件的低频噪声。在噪声应用研究方面，对金属氧化物半导体场效应晶体管（MOSFET）、电阻器、光电探测器及微波与射频器件的噪声进行了测试，深入研究各元器件的噪声产生机理与模型。通过多种实验方法，提出或验证了噪声在元器件缺陷和可靠性等表征方面的应用。本文具体研究成果及创新点如下：
（1）对噪声测试的简单直流偏置技术进行了改进，设计了基于桥结构的噪声测试偏置电路。对噪声测试的交流偏置技术提出了具体实现方案，同时比较了不同偏置源的噪声特性，设计制作了低噪声直流偏置源。
（2）提出了并联结构的放大器设计，有效的降低了噪声测试系统放大部分的噪声。对电流放大技术进行了研究，提出了电流放大器的扩频测试方法。基于上述各技术，针对实际测试元器件建立了多套不同的噪声测试系统。
（3）介观散粒噪声是元器件尺度缩小后出现的新噪声现象，本文重点研究了介观散粒噪声测试方法。根据散粒噪声特性，研究了散粒噪声测试的温度、偏置、频率和系统要求，提出了介观散粒噪声具体测试方法。在并联结构超低噪声放大器的基础上，建立了10K和77K的散粒噪声测试系统，并对该系统进行了验证测试。
（4）通过对小尺寸MOSFET散粒噪声物理模型研究，建立了散粒噪声与背散射系数的关系，并据此提出了通过散粒噪声测试提取背散射系数的方法与步骤。此外，还探索了散粒噪声在MOS器件的可靠性表征中的应用。
（5）分析了固定电阻器电流噪声系数测试国际标准中存在的问题，并提出了改正和改进方法。据此设计制作了电阻器噪声测试软硬件系统，并验证了本测试系统的合理性与准确性。在电阻器电流噪声系数测试的基础上，对薄厚膜电阻及电阻浆料噪声特性进行了测试研究。提出了通过噪声系数表征电阻浆料温度稳定性，以及噪声系数与功率谱密度共同表征薄厚膜电阻质量与可靠性中的方法。
（6）搭建了光电探测器噪声测试系统。推导和实验验证了PbS多晶薄膜光导型红外探测器的1/f噪声和G-R噪声模型。提出了1/f噪声表征红外探测器表面缺陷态，以及G-R噪声测试提取不同温度下的深能级缺陷参数：缺陷激活能、载流子俘获截面的方法。对雪崩光电二极管进行了噪声测试，研究了基于噪声的可靠性表征参量和表征方法。
（7）对微波与射频器件的噪声进行了较为深入的研究，分析了PHEMT器件噪声与潜在缺陷的内在联系。同时对微波与射频器件的热应力与静电应力损伤进行了分析，研究了其失效模式与失效机理。对多种样品进行了热应力与静电应力损伤前后噪声参数与电学参数的测试，并对测试结果进行了对比分析。提出高频器件的低频噪声参数表征方法，结果表明，噪声参数与电学参数在表征器件应力后的损伤方面具有一致性，此外部分噪声参量的表征灵敏度优于电学参数。如G-R噪声和1/f噪声幅度值在表征微波放大器热应力损伤方面具有较高的灵敏度，宽带噪声电压有效值能够反映射频放大器抗ESD能力。
以上研究内容和成果一部分已经应用于实际生产和研究工作中，另一部分还处在探索研究阶段。这些研究能为进一步的噪声测试技术与应用研究奠定实验和理论基础。
Low frequency noise of electronic devices is related to the carriers’ microcosmicbehavior, through the study of the noise test technology, carrier transport-related theorycan be effectively verified, meanwhile, the exploration of the physical origin of noisephenomenon can be promoted. The accurate measurement of the noise is the base forresearch and analysis of noise characteristics, generation mechanism, and its application.One of the purposes to research the noise mechanisms and its testing technology is theapplication of electronic noise. Through the research of the relationship between thenoise and defects, stress damage, technological level, process quality and reliability ofelectrical devices, the characterization methods based on the noise can be built up, andthe methods can be used in the design optimizing, process controlling, qualityevaluating, and reliability screening.
The paper systematically studies on the low frequency noise testing technology andits application method in electronic devices. In the noise testing technology, the researchon the bias, low noise amplifier, data acquisition, noise parameter extraction, and erroranalysis technology was carried out. Based on the low frequency noise characteristicsand the related testing technology, the electronic devices low frequency noise testsystem was established. By using this testing system, low frequency noises of differenttypes of electronic devices have been tested and analyzed. In the research of the noiseapplications, MOSFET, resistors, optical detectors, microwave, and RF devices aretested on their noise characteristics, and the noise generation mechanism as well asnoise models is deeply researched. The noise applications in devices defects andreliability characterization have been proposed and these applications are verified byvariety of experimental tests. The main works of this paper are:
（1）The simple DC bias noise testing technology was improved by using thestructure of the bridge testing circuits. A specific implementation scheme was proposedfor AC bias test technology. Meanwhile, the noise characteristics of different biassources are compared with each other, and a low-noise DC bias source was designed.
（2）The amplifier’s background noise was effectively reduced by the proposedparallel structure amplifier. The current amplifier technology was studied, and a methodof spread spectrum testing was presented in this thesis. Based on the technologiesdescribed above, different sets of noise test system have been built for a variety ofdevices.
（3）Mesoscopic shot noise is a new phenomenon when device dimension of devices reduced, which is the reason why the relative test methods were specificallystudied. According to the characteristics of shot noise, the noises’ testing conditions,such as temperature, bias circuits, frequency and background noise were studied. Basedon the parallel amplifier, a low temperature (10K and77K) shot noise testing systemwas established, which was verified in experiments.
（4）Through the research on the physical model of small-scaled MOSFET,relationship between the shot noise and the scattering coefficient was built up, and amethod of extracting scattering coefficient from shot noise was proposed consequently.Furthermore, the application of shot noise in MOS devices’ reliability characterizationwas explored.
（5）The problems exist in the standard of measurement of current noisegeneration in fixed resistors were discussed, and improved methods are proposed torectify those problems. A resistor noise test software and hardware system was designed,and its rationality and accuracy were verified. Then, film resistors’ noise characteristicswere tested by the system. The methods of characterizing the temperature stability ofresistance paste by current noise index, and characterizing the quality and reliability ofresistor by the power spectral density were proposed.
（6）The photoelectric detector noise test system is established. The1/f and G-Rnoise physical models of PbS infrared detectors were deduced and experimental verified.The1/f noise was employed to characterize the surface defects of infrared detector. Inaddition, G-R noise was employed to characterize the defect parameters includingdefect activate energy, degeneracy factor and capture section. Besides, the noise ofavalanche photo diode (APD) was tested, and the reliability characterization parametersand method were studied.
（7）The noise of microwave and RF devices was studied. The relationshipbetween the noise and internal potential defects of PHEMT devices was analyzed.Analyses of thermal stress and ESD stress in microwave and RF devices are carried out.Then the damages of devices were characterized by noise tests and electrical tests. Amethod for characterizing the degradation by low-frequency noise in high-frequencydevices was proposed consequently. The results shown the noise parameters andelectrical parameters are coincident in characterizing the damage from stress; however,noise parameters are more sensitive than electrical parameters. For example, theamplitude of G-R and1/f noise is more sensitive in characterizing the thermal stressdamage of microwave amplifier; the wide band noise voltage reflects the antistatic property of the device.
The works and achievements stated above were partly used in the real productionand research already; some of these works are still under further exploration. All theworks in this thesis established a foundation for further research on noise testing andapplication both experimentally and theoretically.
本文系统地研究了电子元器件低频电噪声检测技术与应用方法。在测试技术方面，研究了偏置技术、低噪声放大技术、数据采集技术、噪声参数提取技术与测试误差分析方法。基于电子元器件低频噪声特性和相关测试技术，建立电子元器件低频电噪声测试系统。应用所研制的噪声测试系统，测试并分析了不同类型电子元器件的低频噪声。在噪声应用研究方面，对金属氧化物半导体场效应晶体管（MOSFET）、电阻器、光电探测器及微波与射频器件的噪声进行了测试，深入研究各元器件的噪声产生机理与模型。通过多种实验方法，提出或验证了噪声在元器件缺陷和可靠性等表征方面的应用。本文具体研究成果及创新点如下：
（1）对噪声测试的简单直流偏置技术进行了改进，设计了基于桥结构的噪声测试偏置电路。对噪声测试的交流偏置技术提出了具体实现方案，同时比较了不同偏置源的噪声特性，设计制作了低噪声直流偏置源。
（2）提出了并联结构的放大器设计，有效的降低了噪声测试系统放大部分的噪声。对电流放大技术进行了研究，提出了电流放大器的扩频测试方法。基于上述各技术，针对实际测试元器件建立了多套不同的噪声测试系统。
（3）介观散粒噪声是元器件尺度缩小后出现的新噪声现象，本文重点研究了介观散粒噪声测试方法。根据散粒噪声特性，研究了散粒噪声测试的温度、偏置、频率和系统要求，提出了介观散粒噪声具体测试方法。在并联结构超低噪声放大器的基础上，建立了10K和77K的散粒噪声测试系统，并对该系统进行了验证测试。
（4）通过对小尺寸MOSFET散粒噪声物理模型研究，建立了散粒噪声与背散射系数的关系，并据此提出了通过散粒噪声测试提取背散射系数的方法与步骤。此外，还探索了散粒噪声在MOS器件的可靠性表征中的应用。
（5）分析了固定电阻器电流噪声系数测试国际标准中存在的问题，并提出了改正和改进方法。据此设计制作了电阻器噪声测试软硬件系统，并验证了本测试系统的合理性与准确性。在电阻器电流噪声系数测试的基础上，对薄厚膜电阻及电阻浆料噪声特性进行了测试研究。提出了通过噪声系数表征电阻浆料温度稳定性，以及噪声系数与功率谱密度共同表征薄厚膜电阻质量与可靠性中的方法。
（6）搭建了光电探测器噪声测试系统。推导和实验验证了PbS多晶薄膜光导型红外探测器的1/f噪声和G-R噪声模型。提出了1/f噪声表征红外探测器表面缺陷态，以及G-R噪声测试提取不同温度下的深能级缺陷参数：缺陷激活能、载流子俘获截面的方法。对雪崩光电二极管进行了噪声测试，研究了基于噪声的可靠性表征参量和表征方法。
（7）对微波与射频器件的噪声进行了较为深入的研究，分析了PHEMT器件噪声与潜在缺陷的内在联系。同时对微波与射频器件的热应力与静电应力损伤进行了分析，研究了其失效模式与失效机理。对多种样品进行了热应力与静电应力损伤前后噪声参数与电学参数的测试，并对测试结果进行了对比分析。提出高频器件的低频噪声参数表征方法，结果表明，噪声参数与电学参数在表征器件应力后的损伤方面具有一致性，此外部分噪声参量的表征灵敏度优于电学参数。如G-R噪声和1/f噪声幅度值在表征微波放大器热应力损伤方面具有较高的灵敏度，宽带噪声电压有效值能够反映射频放大器抗ESD能力。
以上研究内容和成果一部分已经应用于实际生产和研究工作中，另一部分还处在探索研究阶段。这些研究能为进一步的噪声测试技术与应用研究奠定实验和理论基础。
Low frequency noise of electronic devices is related to the carriers’ microcosmicbehavior, through the study of the noise test technology, carrier transport-related theorycan be effectively verified, meanwhile, the exploration of the physical origin of noisephenomenon can be promoted. The accurate measurement of the noise is the base forresearch and analysis of noise characteristics, generation mechanism, and its application.One of the purposes to research the noise mechanisms and its testing technology is theapplication of electronic noise. Through the research of the relationship between thenoise and defects, stress damage, technological level, process quality and reliability ofelectrical devices, the characterization methods based on the noise can be built up, andthe methods can be used in the design optimizing, process controlling, qualityevaluating, and reliability screening.
The paper systematically studies on the low frequency noise testing technology andits application method in electronic devices. In the noise testing technology, the researchon the bias, low noise amplifier, data acquisition, noise parameter extraction, and erroranalysis technology was carried out. Based on the low frequency noise characteristicsand the related testing technology, the electronic devices low frequency noise testsystem was established. By using this testing system, low frequency noises of differenttypes of electronic devices have been tested and analyzed. In the research of the noiseapplications, MOSFET, resistors, optical detectors, microwave, and RF devices aretested on their noise characteristics, and the noise generation mechanism as well asnoise models is deeply researched. The noise applications in devices defects andreliability characterization have been proposed and these applications are verified byvariety of experimental tests. The main works of this paper are:
（1）The simple DC bias noise testing technology was improved by using thestructure of the bridge testing circuits. A specific implementation scheme was proposedfor AC bias test technology. Meanwhile, the noise characteristics of different biassources are compared with each other, and a low-noise DC bias source was designed.
（2）The amplifier’s background noise was effectively reduced by the proposedparallel structure amplifier. The current amplifier technology was studied, and a methodof spread spectrum testing was presented in this thesis. Based on the technologiesdescribed above, different sets of noise test system have been built for a variety ofdevices.
（3）Mesoscopic shot noise is a new phenomenon when device dimension of devices reduced, which is the reason why the relative test methods were specificallystudied. According to the characteristics of shot noise, the noises’ testing conditions,such as temperature, bias circuits, frequency and background noise were studied. Basedon the parallel amplifier, a low temperature (10K and77K) shot noise testing systemwas established, which was verified in experiments.
（4）Through the research on the physical model of small-scaled MOSFET,relationship between the shot noise and the scattering coefficient was built up, and amethod of extracting scattering coefficient from shot noise was proposed consequently.Furthermore, the application of shot noise in MOS devices’ reliability characterizationwas explored.
（5）The problems exist in the standard of measurement of current noisegeneration in fixed resistors were discussed, and improved methods are proposed torectify those problems. A resistor noise test software and hardware system was designed,and its rationality and accuracy were verified. Then, film resistors’ noise characteristicswere tested by the system. The methods of characterizing the temperature stability ofresistance paste by current noise index, and characterizing the quality and reliability ofresistor by the power spectral density were proposed.
（6）The photoelectric detector noise test system is established. The1/f and G-Rnoise physical models of PbS infrared detectors were deduced and experimental verified.The1/f noise was employed to characterize the surface defects of infrared detector. Inaddition, G-R noise was employed to characterize the defect parameters includingdefect activate energy, degeneracy factor and capture section. Besides, the noise ofavalanche photo diode (APD) was tested, and the reliability characterization parametersand method were studied.
（7）The noise of microwave and RF devices was studied. The relationshipbetween the noise and internal potential defects of PHEMT devices was analyzed.Analyses of thermal stress and ESD stress in microwave and RF devices are carried out.Then the damages of devices were characterized by noise tests and electrical tests. Amethod for characterizing the degradation by low-frequency noise in high-frequencydevices was proposed consequently. The results shown the noise parameters andelectrical parameters are coincident in characterizing the damage from stress; however,noise parameters are more sensitive than electrical parameters. For example, theamplitude of G-R and1/f noise is more sensitive in characterizing the thermal stressdamage of microwave amplifier; the wide band noise voltage reflects the antistatic property of the device.
The works and achievements stated above were partly used in the real productionand research already; some of these works are still under further exploration. All theworks in this thesis established a foundation for further research on noise testing andapplication both experimentally and theoretically.
引文
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