锡酸盐基透明导电膜及其在全钙钛矿铁电薄膜器件中的应用
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摘要
透明导电氧化物(TCO)薄膜以掺Sn的In_2O_3(ITO)、掺Al的ZnO(AZO)、掺Sb的SnO_2(ATO)等为代表,是一种重要的光电信息材料。由于在可见光的范围内具有很高的光透过率,其电阻率又接近金属的数值,这使得TCO薄膜材料成为应用范围广且最具有商业应用价值的功能薄膜材料之一。目前的透明导电薄膜广泛应用于平板显示器、太阳能电池、触摸屏等领域。近年来,随着光电子特殊器件的要求,之前研究并应用的TCO薄膜性能已经越来越不能满足人们的需求,如真彩液晶显示器要求TCO膜具有大的光学禁带宽度、面接触式发射激光器需要TCO在红外光区间(特别是1000nm-1500nm)具有很高的光透射率(而ITO在1000nm-1500nm的波长区间吸收系数已经非常大)等。而对于透明薄膜器件,单晶TCO薄膜可以和其他薄膜相互外延生长,从而能够有效的降低界面缺陷对器件性能带来的影响。所有这些都预示着具有特殊应用价值的TCO薄膜应该得到人们的高度重视和研究。另一方面,钙钛矿型氧化物是一类重要的功能材料,包含有高温超导、巨磁阻、铁电、压电、磁电、光电等众多的物理性能。全钙钛矿薄膜器件由于各层薄膜之间的相互外延生长,很大程度上解决了界面问题,使得器件特性得到了显著的提高,并呈现出了一些独特的功能。因此,寻找并制备具有高质量的钙钛矿结构外延TCO薄膜对TCO材料以及全钙钛矿薄膜异质结都具有着重要意义。
铁电薄膜由于其物理机制和潜在的在各种微电子器件如非挥发性动态随机存贮器和铁电场效应管上的应用,受到了很多的关注。由于具有较大的直接禁带宽度,铁电薄膜在可见光范围内是透明的,而当薄膜厚度降低到一定的程度,因为氧空位和离子扩散等存在,其内部存在着比较大的载流子浓度,又可以被当作p型半导体材料,因此全透明铁电薄膜器件被人们寄予极大的期望。然而,高质量n型TCO薄膜的严重缺乏,阻碍了该类薄膜器件的研究进展。
我们利用激光脉冲沉积(PLD)系统,基于对BaSnO_3和SrSnO_3进行A位La元素少量掺杂,在SrTiO_3(001)基片上成功外延生长了LBSO和LSSO两种锡酸盐基n型TCO薄膜。该类薄膜具有赝立方钙钛矿单晶结构,以及可见光区的高透光率和室温下10~(-3)Ωcm量级的电阻率。BaSnO_3和SrSnO_3基TCO薄膜具有不同的近红外光透光率行为,使得它们可以应用于不同的透明薄膜器件中。由于LSSO薄膜的晶胞参数和PZT和BFO非常匹配,我们成功实现了LSSO和PZT、BFO的相互外延生长,制备了全钙钛矿透明铁电电容器。实验表明,我们制备的电容器具有非常好的结构特征和光学性质,并表现出了一些有趣的疲劳特性。而利用较薄的PZT和BFO薄膜当作p型半导体,我们又成功制备了PZT/LSSO和BFO/LSSO透明钙钛矿p-n结,这两种异质结均表现出了优秀的整流特性。
本论文总共分五章。
第一章主要介绍了透明导电薄膜的研究现状。首先我们回顾了传统TCO薄膜的分类、研究进展、应用领域及其发展要求:一方面从实际应用角度出发,概括了传统TCO薄膜的发展现状和存在的问题,指出了寻找新型TCO薄膜的一些研究方向;另一方面介绍了钙钛矿结构氧化物薄膜的一些物理特性,指明寻找和制备具有钙钛矿结构的TCO薄膜的意义。接着从理论的角度,阐明了TCO薄膜的透明和导电机制。在这些基础上,我们分别回顾了透明薄膜器件和铁电薄膜器件的研究进展,并最终指出全钙钛矿型透明铁电薄膜器件的优越性和制备的可行性。
第二章主要介绍了本文实验需要用到的薄膜制备方法和样品测试方法,特别对于几种重要的实验手段如X射线衍射的各种扫描方式,倒易空间图基本原理,从霍尔效应测量结果分析推导薄膜电输运特性等做了详细的介绍。
第三章我们对La掺杂的BaSnO_3外延TCO薄膜进行了研究。实验表明该类薄膜具有立方钙钛矿单晶结构,并具有可见光区95%以上的透光率以及室温接近4mΩcm的n型电阻率。相比于传统的TCO薄膜,LBSO薄膜可以满足一些新型光电薄膜器件的宽禁带、钙钛矿单晶结构、大的透光窗口等特殊要求。而相比于其他文献所报道的具有钙钛矿结构的TCO,LBSO薄膜具有和其他钙钛矿功能薄膜更加匹配的沉积参数以及更大的禁带宽度,有利于其在全钙钛矿薄膜器件中的应用。
第四章系统研究了沉积参数和掺杂浓度对La掺杂的SrSnO_3外延薄膜的结构、电学和光学性质的影响。实验结果表明,在SrTiO_3(001)基片上生长的LSSO均具有立方钙钛矿外延单晶结构以及4.5eV以上的光学能带宽度,并表现出良好的n型电输运和透光特性。相比于之前研究的LBSO薄膜,LSSO在600℃制备温度下依然可以得到良好的外延单晶结构。另外LSSO薄膜的晶胞参数与PZT、BFO非常匹配,并在红外光波长范围内依然具有良好的透光率,这些都预示着LSSO薄膜可以更好地应用到全钙钛矿透明薄膜器件中。
第五章我们成功实现了LSSO和PZT、BFMO(BFO)的相互外延生长,制备了透明全钙钛矿铁电薄膜电容器。实验表明,这两类电容器具有非常好的结构特征和光学性质,并表现出了较大的矫顽场和较差的抗疲劳特性,我们认为这可能和LSSO和铁电薄膜之间形成了空间电荷区有关。为了更深入了解LSSO和铁电薄膜间的界面问题,利用较薄的PZT和BFO薄膜当作p型半导体,我们又成功制备了PZT/LSSO和BFO/LSSO透明钙钛矿p-n结,这两种异质结均表现出了优秀的整流特性,从而验证了我们对铁电电容器疲劳特性的解释。另外通过能带结构分析,我们得到的实验测量数据与理论结果非常符合。
Transparent and conductive oxide(TCO) thin-films such as Sn-doped In_2O_3(ITO), Al-doped ZnO,and Sb-doped SnO_2 are one type of important materials in optoelectronic industries.The unique feature of high optical transmittance in the visible range and low electric resistivity at room temperature(RT) gives them particular functions in flat panel displays,solar cells,touch panels,and so on. However,the developments in devices applications frequently demand improvements in physical properties of TCO films.For example,the full-colored liquid-crystal displays require TCO films with a wider direct allowed band gap,while in surface emitting lasers the films need to possess high optical transmittance in the near infrared wavelength.And for transparent thin-film transistors,single-crystalline TCO films may also be required in order to grow epitaxially with the other functional layers for minimizing the density of defects at the interfaces.All these mean that the TCO films adaptable to specialized applications should be highly expected.On the other hand, the perovskite oxides represent also an important class of materials since they were discovered to have many intriguing physical properties such as the high transition-temperature superconductivity,colossal magnetoresistance,ferroelectric, piezoelectric,magneto-electric,and electro-optic effects.Due to their similar crystal structure,with the advances in film growth,a variety of all-perovskite heterostructures have been proposed and fabricated for devices with improved performance or unconventional functionalities.Thus,to search for high-quality single-crystalline TCO films of the perovskite structure is significant not only for the TCO films themselves but also for the thin-film devices based on all-perovskite heterostructures.In the past years,a few perovskite-type TCO thin-films including the In-,Sb-,and La-doped SrTiO_3,Nb-doped CaTiO_3,and Cd_3TeO_6 have been fabricated and characterized.
Ferroelectric thin films have attracted great attention for their physics and potential applications in various microelectronic devices such as nonvolatile ferroelectric random access memories and ferroelectric field-effect transistors,which are also transparent in the visible range due to their wide direct allowed band gap. Furthermore,the ferroelectric films can be treated as p-type semiconductors at reduced film thicknesses,due to possibly the processing-induced element loss(Pb for the PZT,and Bi for the BFO) and oxygen vacancies in the films.Herein,transparent ferroelectric thin-film devices with all-perovskite structures have been highly expected,although the lack of high-quality perovskite-type TCO film was a serious trouble.
In this thesis,La_xBa_(1-x)SnO_3(LBSO) and La_xSr_(1-x)SnO_3(LSSO) films have been epitaxial grown on SrTiO_3(001) substrates by the pulsed laser deposition(PLD) method.It is revealed that all the films have cubic perovskite structures,excellent optical transmittance in the visible range,and n-type electronic transport with low resistivities at room temperature.The different optical transmittances in the near infrared wavelength endue the doped BaSnO_3(BSO) and SrSnO_3(SSO) with various applications in film devices.Since the lattice constant is very close to the in-plane lattice constant of PZT and BFMO(BFO) films,all-perovskite LSSO/PZT/LSSO and (Pt)/BFMO/LSSO capacitors were fabricated,and their structural,optical,and ferroelectric properties have been investigated.With the reduced ferroelectric film thicknesses,the junctions using heteroepitaxial p-PZT/n-LSSO and p-BFO/n-LSSO were also proposed and examined,and we demonstrated that they show good rectifying characteristics in addition to the high optical transmittance in the visible range.
The whole thesis consists of five chapters.
Chapter 1:The general review of the history and present research situation of the TCO film is given.First,we briefly review the development of the conventional TCO thin-films including systems,research progress,application and defect,and point out the high-quality single-crystalline TCO films of the perovskite structure is significant not only for the TCO films but also for the thin-film devices based on all-perovskite heterostructures.Next,we make clear the mechanism of optical transmittance and electronic transport in the films based on the theoretical models.In the end of the chapter,we simply review the research progress of ferroelectric thin-film devices and transparent thin-film devices,respectively,and discuss the feasibility and advantage of the transparent ferroelectric film devices with all-perovskite structures.
Chapter 2:The film preparation methods and samples measurements are introduced.Especially,the pulsed laser deposition(PLD) method,X-ray diffraction reciprocal space mapping,and the hall measurement are described in details.
Chapter 3:La-doped BSO films have been prepared by laser ablation under conditions compatible with many other perovskite oxide films.The epitaxial films show a cubic perovskite structure,good transmittance in the visible range and a high conductivity at room temperature.The transport behavior and conductivity can be controlled by the growth temperature.Comparing to the conventional TCO films,the LBSO films can be attractive as a new TCO with the perovskite structure,and are promising for use in epitaxial all-perovskite transparent devices,due to the wide direct bang gap,large transparent window,and suitable growth parameters.
Chapter 4:We probe the effect of various growth parameters and doping concentrations on the structures and properties of LSSO films prepared by PLD. These films can be grown epitaxially on STO(001) at a much lower deposition temperature of 600℃,and possess pseudo-cubic perovskite single-crystalline structures,wide direct band gaps larger than 4.5eV,high conductivities at room temperature,and well optical transmittance even at the wavelength as far as 2300nm. Comparing to LBSO films,LSSO have great advantages for use in transparent thin-film devices due to their lattice constants conformable to PZT and BFO counterparts,lower growth temperature,and well optical transmittance in the near infrared wavelength.
Chapter 5:Ferroelectric LSSO/PZT/LSSO and(Pt)/BFMO/LSSO capacitors have been grown epitaxially on STO(001) substrates,and their structural,optical,and ferroelectric properties have been investigated.These capacitors show square polarization-electric field hysteresis loops,well optical transmittance,but larger coercive field,and especially poor fatigue resistance,in contrast to the epitaxial ferroelectric capacitors with p-type LSMO electrodes,which may be related to charge injection and the interface capacitor or built-in potential between PZT(BFMO) and n-type LSSO films.To understand the interface property of the heterostructures,with the reduced ferroelectric film thicknesses,the junctions using heteroepitaxial p-PZT/n-LSSO and p-BFO/n-LSSO were also proposed and examined,and we demonstrated that they show good rectifying characteristics in addition to the high optical transmittance in the visible range.The ideal turn-on voltage determined from staggered energy band diagrams are in good agreement with the experimental values. Herein,we believe the p-n junctions have been built in between PZT(BFO) and LSSO films.
铁电薄膜由于其物理机制和潜在的在各种微电子器件如非挥发性动态随机存贮器和铁电场效应管上的应用,受到了很多的关注。由于具有较大的直接禁带宽度,铁电薄膜在可见光范围内是透明的,而当薄膜厚度降低到一定的程度,因为氧空位和离子扩散等存在,其内部存在着比较大的载流子浓度,又可以被当作p型半导体材料,因此全透明铁电薄膜器件被人们寄予极大的期望。然而,高质量n型TCO薄膜的严重缺乏,阻碍了该类薄膜器件的研究进展。
我们利用激光脉冲沉积(PLD)系统,基于对BaSnO_3和SrSnO_3进行A位La元素少量掺杂,在SrTiO_3(001)基片上成功外延生长了LBSO和LSSO两种锡酸盐基n型TCO薄膜。该类薄膜具有赝立方钙钛矿单晶结构,以及可见光区的高透光率和室温下10~(-3)Ωcm量级的电阻率。BaSnO_3和SrSnO_3基TCO薄膜具有不同的近红外光透光率行为,使得它们可以应用于不同的透明薄膜器件中。由于LSSO薄膜的晶胞参数和PZT和BFO非常匹配,我们成功实现了LSSO和PZT、BFO的相互外延生长,制备了全钙钛矿透明铁电电容器。实验表明,我们制备的电容器具有非常好的结构特征和光学性质,并表现出了一些有趣的疲劳特性。而利用较薄的PZT和BFO薄膜当作p型半导体,我们又成功制备了PZT/LSSO和BFO/LSSO透明钙钛矿p-n结,这两种异质结均表现出了优秀的整流特性。
本论文总共分五章。
第一章主要介绍了透明导电薄膜的研究现状。首先我们回顾了传统TCO薄膜的分类、研究进展、应用领域及其发展要求:一方面从实际应用角度出发,概括了传统TCO薄膜的发展现状和存在的问题,指出了寻找新型TCO薄膜的一些研究方向;另一方面介绍了钙钛矿结构氧化物薄膜的一些物理特性,指明寻找和制备具有钙钛矿结构的TCO薄膜的意义。接着从理论的角度,阐明了TCO薄膜的透明和导电机制。在这些基础上,我们分别回顾了透明薄膜器件和铁电薄膜器件的研究进展,并最终指出全钙钛矿型透明铁电薄膜器件的优越性和制备的可行性。
第二章主要介绍了本文实验需要用到的薄膜制备方法和样品测试方法,特别对于几种重要的实验手段如X射线衍射的各种扫描方式,倒易空间图基本原理,从霍尔效应测量结果分析推导薄膜电输运特性等做了详细的介绍。
第三章我们对La掺杂的BaSnO_3外延TCO薄膜进行了研究。实验表明该类薄膜具有立方钙钛矿单晶结构,并具有可见光区95%以上的透光率以及室温接近4mΩcm的n型电阻率。相比于传统的TCO薄膜,LBSO薄膜可以满足一些新型光电薄膜器件的宽禁带、钙钛矿单晶结构、大的透光窗口等特殊要求。而相比于其他文献所报道的具有钙钛矿结构的TCO,LBSO薄膜具有和其他钙钛矿功能薄膜更加匹配的沉积参数以及更大的禁带宽度,有利于其在全钙钛矿薄膜器件中的应用。
第四章系统研究了沉积参数和掺杂浓度对La掺杂的SrSnO_3外延薄膜的结构、电学和光学性质的影响。实验结果表明,在SrTiO_3(001)基片上生长的LSSO均具有立方钙钛矿外延单晶结构以及4.5eV以上的光学能带宽度,并表现出良好的n型电输运和透光特性。相比于之前研究的LBSO薄膜,LSSO在600℃制备温度下依然可以得到良好的外延单晶结构。另外LSSO薄膜的晶胞参数与PZT、BFO非常匹配,并在红外光波长范围内依然具有良好的透光率,这些都预示着LSSO薄膜可以更好地应用到全钙钛矿透明薄膜器件中。
第五章我们成功实现了LSSO和PZT、BFMO(BFO)的相互外延生长,制备了透明全钙钛矿铁电薄膜电容器。实验表明,这两类电容器具有非常好的结构特征和光学性质,并表现出了较大的矫顽场和较差的抗疲劳特性,我们认为这可能和LSSO和铁电薄膜之间形成了空间电荷区有关。为了更深入了解LSSO和铁电薄膜间的界面问题,利用较薄的PZT和BFO薄膜当作p型半导体,我们又成功制备了PZT/LSSO和BFO/LSSO透明钙钛矿p-n结,这两种异质结均表现出了优秀的整流特性,从而验证了我们对铁电电容器疲劳特性的解释。另外通过能带结构分析,我们得到的实验测量数据与理论结果非常符合。
Transparent and conductive oxide(TCO) thin-films such as Sn-doped In_2O_3(ITO), Al-doped ZnO,and Sb-doped SnO_2 are one type of important materials in optoelectronic industries.The unique feature of high optical transmittance in the visible range and low electric resistivity at room temperature(RT) gives them particular functions in flat panel displays,solar cells,touch panels,and so on. However,the developments in devices applications frequently demand improvements in physical properties of TCO films.For example,the full-colored liquid-crystal displays require TCO films with a wider direct allowed band gap,while in surface emitting lasers the films need to possess high optical transmittance in the near infrared wavelength.And for transparent thin-film transistors,single-crystalline TCO films may also be required in order to grow epitaxially with the other functional layers for minimizing the density of defects at the interfaces.All these mean that the TCO films adaptable to specialized applications should be highly expected.On the other hand, the perovskite oxides represent also an important class of materials since they were discovered to have many intriguing physical properties such as the high transition-temperature superconductivity,colossal magnetoresistance,ferroelectric, piezoelectric,magneto-electric,and electro-optic effects.Due to their similar crystal structure,with the advances in film growth,a variety of all-perovskite heterostructures have been proposed and fabricated for devices with improved performance or unconventional functionalities.Thus,to search for high-quality single-crystalline TCO films of the perovskite structure is significant not only for the TCO films themselves but also for the thin-film devices based on all-perovskite heterostructures.In the past years,a few perovskite-type TCO thin-films including the In-,Sb-,and La-doped SrTiO_3,Nb-doped CaTiO_3,and Cd_3TeO_6 have been fabricated and characterized.
Ferroelectric thin films have attracted great attention for their physics and potential applications in various microelectronic devices such as nonvolatile ferroelectric random access memories and ferroelectric field-effect transistors,which are also transparent in the visible range due to their wide direct allowed band gap. Furthermore,the ferroelectric films can be treated as p-type semiconductors at reduced film thicknesses,due to possibly the processing-induced element loss(Pb for the PZT,and Bi for the BFO) and oxygen vacancies in the films.Herein,transparent ferroelectric thin-film devices with all-perovskite structures have been highly expected,although the lack of high-quality perovskite-type TCO film was a serious trouble.
In this thesis,La_xBa_(1-x)SnO_3(LBSO) and La_xSr_(1-x)SnO_3(LSSO) films have been epitaxial grown on SrTiO_3(001) substrates by the pulsed laser deposition(PLD) method.It is revealed that all the films have cubic perovskite structures,excellent optical transmittance in the visible range,and n-type electronic transport with low resistivities at room temperature.The different optical transmittances in the near infrared wavelength endue the doped BaSnO_3(BSO) and SrSnO_3(SSO) with various applications in film devices.Since the lattice constant is very close to the in-plane lattice constant of PZT and BFMO(BFO) films,all-perovskite LSSO/PZT/LSSO and (Pt)/BFMO/LSSO capacitors were fabricated,and their structural,optical,and ferroelectric properties have been investigated.With the reduced ferroelectric film thicknesses,the junctions using heteroepitaxial p-PZT/n-LSSO and p-BFO/n-LSSO were also proposed and examined,and we demonstrated that they show good rectifying characteristics in addition to the high optical transmittance in the visible range.
The whole thesis consists of five chapters.
Chapter 1:The general review of the history and present research situation of the TCO film is given.First,we briefly review the development of the conventional TCO thin-films including systems,research progress,application and defect,and point out the high-quality single-crystalline TCO films of the perovskite structure is significant not only for the TCO films but also for the thin-film devices based on all-perovskite heterostructures.Next,we make clear the mechanism of optical transmittance and electronic transport in the films based on the theoretical models.In the end of the chapter,we simply review the research progress of ferroelectric thin-film devices and transparent thin-film devices,respectively,and discuss the feasibility and advantage of the transparent ferroelectric film devices with all-perovskite structures.
Chapter 2:The film preparation methods and samples measurements are introduced.Especially,the pulsed laser deposition(PLD) method,X-ray diffraction reciprocal space mapping,and the hall measurement are described in details.
Chapter 3:La-doped BSO films have been prepared by laser ablation under conditions compatible with many other perovskite oxide films.The epitaxial films show a cubic perovskite structure,good transmittance in the visible range and a high conductivity at room temperature.The transport behavior and conductivity can be controlled by the growth temperature.Comparing to the conventional TCO films,the LBSO films can be attractive as a new TCO with the perovskite structure,and are promising for use in epitaxial all-perovskite transparent devices,due to the wide direct bang gap,large transparent window,and suitable growth parameters.
Chapter 4:We probe the effect of various growth parameters and doping concentrations on the structures and properties of LSSO films prepared by PLD. These films can be grown epitaxially on STO(001) at a much lower deposition temperature of 600℃,and possess pseudo-cubic perovskite single-crystalline structures,wide direct band gaps larger than 4.5eV,high conductivities at room temperature,and well optical transmittance even at the wavelength as far as 2300nm. Comparing to LBSO films,LSSO have great advantages for use in transparent thin-film devices due to their lattice constants conformable to PZT and BFO counterparts,lower growth temperature,and well optical transmittance in the near infrared wavelength.
Chapter 5:Ferroelectric LSSO/PZT/LSSO and(Pt)/BFMO/LSSO capacitors have been grown epitaxially on STO(001) substrates,and their structural,optical,and ferroelectric properties have been investigated.These capacitors show square polarization-electric field hysteresis loops,well optical transmittance,but larger coercive field,and especially poor fatigue resistance,in contrast to the epitaxial ferroelectric capacitors with p-type LSMO electrodes,which may be related to charge injection and the interface capacitor or built-in potential between PZT(BFMO) and n-type LSSO films.To understand the interface property of the heterostructures,with the reduced ferroelectric film thicknesses,the junctions using heteroepitaxial p-PZT/n-LSSO and p-BFO/n-LSSO were also proposed and examined,and we demonstrated that they show good rectifying characteristics in addition to the high optical transmittance in the visible range.The ideal turn-on voltage determined from staggered energy band diagrams are in good agreement with the experimental values. Herein,we believe the p-n junctions have been built in between PZT(BFO) and LSSO films.
引文
[1]Gordon Thomas.1997.Materials science:Invisible circuits[J].Nature,389:907-908.
[2]K.Badeker.1907.Transparent conducting CdO obtained by thermal oxidation of sputtered Cd fiims[J].Physics,22:749-754.
[3]李言荣．2001．电子材料导论[M]．北京：清华大学出版社,301-307．
[4]J.C.C.Fan,T.B.Reed,and J.B.Goodenough.1974.Selective transparent film of dielectric/metal/dielectric multilayer system.Proceedings of Ninth Intersoc Energy Convers Engineering Coference[C].New York,USA,341.
[5]M.Bender,W.Seelig,J.Stollenwerk,et al.1998.Dependence of film composition and thicknesses on optical and electrical properties of ITO-metal-ITO multilayers [J].Thin Solid Films,326:67-71.
[6]D.R.Sahu,and J.L.Huang.2007.Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures [J].Microelectron.J.,38:299-303.
[7]D.R.Sahu,and J.L.Huang.2006.Characteristics of ZnO-Cu-ZnO multilayer films on copper layer properties[J].Appl.Surf.Sci.,253:827-832.
[8]D.R.Sahu,and J.L.Huang.2006.High quality transparent conductive ZnO/Ag/ZnO multilayer films deposited at room temperature[J].Thin Solid Films,515:876-879.
[9]D.R.Sahu,S.Y.Lin and J.L.Huang.2006.ZnO/Ag/ZnO multilayer films for the application of a very low resistance transparent electrode[J].Appl.Surf.Sci.,252:7509.
[10]D.R.Sahu,and J.L.Huang.2006.Design of ZnO/Ag/ZnO multilayer transparent conductive films[J].Mat.Sci.Eng.B.,130:295-299.
[11]X.J.Liu,X.Cai,N.Jiang,et al.2003.The design of ZnS/Ag/ZnS transparent conductive multilayer films[J].Thin Solid Films,441:200-206.
[12]H.M.Philips,Yunjun Li,Binglin Zhang,et al.1996.Reactive pulsed laser deposition and laser induced crystallization of SnO_2 transparent conducting thin films[J].Appl.Phys.A.,63:347-351.
[13]M.Batzill,U.Diebold.2005.The surface and materials science of tin oxide[J].Prog.Surf.Sci.,79:47-154.
[14]R.Dolbec,M.A.Serventi,R.G.Saint-Jacques,et al.2002.Microstructure and physical properties of nanostructured tin oxide thin films grown by means of pulsed laser deposition[J].Thin Solid films,419:230-236.
[15]S.Shanthi,C.Subramanian,P.Ramasamy.1999.Growth and characterization of antimony doped tin oxide thin films[J].J.Cryst.Growth,197:858-864.
[16]E.Elangovan,K.Ramamurthi.2005.Studies on micro-structural and electrical properties of spray-deposited fluorine-doped tin oxide thin films from low-cost precursor[J].Thin Solid Films,476:231-236.
[17]E.Shanthi,A.Banerjee,V.Dutta,et al.1982.Electrical and optical properties of tin oxide films doped with F and (Sb+F)[J].J.Appl.Phys.,53:1615-1621.
[18]M.L.Bernardi,L.E.Soledade,I.A.Santos,et al.2002.Influence of the concentration of Sb_2O_3 and the viscosity of the precursor solution on the electrical and optical properties of SnO_2 thin films produced by the pechini method[J].Thin Solid Films,405:228-233
[19]J.Dutta,J.Perrin,T.Emeraud,et al.1995.Pyrosol deposition of fluorine-doped tin dioxide thin films[J].J.Mater.Sci.,30:53-62.
[20]J.R.zhang,L.Gao.2004.Synthesis of antimony-doped tin oxide (ATO)nanoparticles by the nitrate-citrate combustion method[J].Materials Research Bulletin.,39:2249-2255.
[21]R.Rai,T.D.Senguttuvan,and S.T.Lakshmikumar.2006.Study of the electronic and optical bonding properties of doped SnO_2[J].Computational Materials Science,37:15-19.
[22]K.L.Chopra,S.Major,D.K.Pandya.1983.Transparent conductors-a status review[J].Thin Solid Films,102:1-46.
[23]J.L.Vossen.1971.Rf sputtered transparent conductors the system In_2O_3-SnO_2[J].RCA Rev.,32:289-296.
[24]J.N.Avaritsotis and R.P.Howson.1981.Composition and conductivity of fluorine-doped conducting indium oxide films prepared by reactive ion plating[J].Thin Solid Films,77:351-357.
[25]G.Frank,H.Kostlin.1982.Electrical properties and defect model of tin-doped indium oxide layers[J].Appl.Phys.A,27:197-206.
[26]N.Yamada,I.Yasui,Y.Shigesato,et al.1999.Doping mechanisms of Sn in In_2O_3 powder studied using Sn m(o|¨)ssbauer spectroscopy and X-ray diffraction[J].Jpn.J.Appl.Phys.,38:2856-2862.
[27]F.O.Adurodija,H.Izumi,T.Ishihara,et al.1999.Highly conducting indium tin oxide (ITO)thin films deposite by pulsed laser ablation[J].Thin Solid Films,350:79-84.
[28]J.Ederth,P.eszler,C.G.Granqvist,et al.2003.Indium tin oxide films made from nanoparticles:models for the optical and electrical properties.Thin Solid Films,445:199-206
[29]H.Ohta,M.Orita,H.Hosono,et al.2000.Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia (100)by pulsed-laser deposition[J]. Appl.Phys.Lett.,76:2740-2742.
[30]H.Ohta,M.Orita,H.Hosono,et al.2002.Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia[J].J.Appl.Phys.,91:3547-3550.
[31]H.Hosono.2007.Recent progress in transparent oxide semiconductors:Materials and device application[J].Thin Solid Films,515:6000-6014.
[32]H.Ohta,H.Mizoguchi,H.Hosono,et al.2003.Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh_2O_4/n-ZnO[J].Appl.Phys.Lett.,82:823-825.
[33]H.Yanagi,K.Ueda,H.Hosono,et al.2002.Fabrication of all oxide transparent p-n homojunction using bipolar CuInO_2 semiconducting oxide with delafossite structure[J].Solid State Commun.,121:15-17.
[34]H.Ohta,K.Kawamura,H.Hosono,et al.2000.Current injection emission from a transparent p-n junction composed of p-SrCu_2O_2/n-ZnO[J].Appl.Phys.Lett.,77:475-477.
[35]H.Ohta,M.Hirano,H.Hosono,et al.2003.Fabrication and photoresponse of pn-heterojunction diode composed of transparent oxide semiconductors,p-NiO and n-ZnO[J].Appl.Phys.Lett.,83:1029-1031.
[36]H.Ohta,T.Kambayashi,H.Hosono,et al.2003.Application of a transparent conductive substrate with an atomically flat and stepped surface to lateral growth of an organic molecule:vanadyl phthalocyanine[J].Adv.Mater.,15:1258-1262.
[37]H.Ohta,T.Kambayashi,H.Hosono,et al.2004.Transparent organic thin-film transistor with a laterally grown non-planar phthalocyanine channel[J].Adv.Mater.,16:312-316.
[38]A.F.Kohan,G.Ceder,D.Morgan,et al.2000.First-priciples study of native point defects in ZnO[J].Phys.Rev.B,61:15019-15027.
[39]D.C.Look,J.W.Hemsky,J.R.Sizelove.1999.Residual native shallow donor in ZnO[J].Phys.Rev.Lett,82:2552-2555.
[40]C.G.Van de Walle.2001.Deffect analysis and engineering in ZnO[J].Physica B:Condensed Matter.,308-310:899-903.
[41]C.G.Van de Walle.2000.Hydrogen as a cause of doping in zinc oxide[J].Phys.Rev.Lett.,85:1012-1015.
[42]H.Hirasawa,M.Yoshida,S.Nakamura,et al.2001.ZnO:Ga conducting-films grown by c arc-discharge ionplating[J].Solar Energy Materials and Solar Cells,67:231-236.
[43]H.Kim,A.Rique,J.S.Horwitz,et al.2000.Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices[J].Thin Solid Films, 377-378:798-802.
[44]Kim K J,Park Y R.2001.Large and abrupt optical band gap variation in In-doped ZnO[J].Appl.Phys.Lett,78:475-477.
[45]T.Minami.2000.New n-type transparent conducting oxides[J].MRS Bull.,25:38-44.
[46]T.Minami,Y.Takeda,T.Kakumu,et al.1997.Preparation of transparent conducting In_4Sn_3O_(12)thin films by DC magnetron sputtering[J].Thin Solid Films,308-309:13-18.
[47]T.Minami,T.Kakumu,S.Takata,et al.1996.Highly transparent and conductive ZnO-In_2O_3 thin films prepared by DC magnetron sputteringfj].Thin Solid Films,290-291:1-5.
[48]T.Minami,T.Yamamoto,and T.Miyata.2000.Highly transparent and conductive Rare Earth-doped ZnO thin films prepared by magnetron sputtering[J].Thin Solid Films,366:1-2.
[49]R.J.Cava,Julia M.Phillips,J.Kwo,et al.1994.GaInO_3:A new transparent conducting oxide[J].Appl.Phys.Lett.,64:2071-2702.
[50]Julia M.Phillips,J.Kwo,G.A.Thomas,et al.1994.Transparent conducting thin films of GaInO_3[J].Appl.Phys.Lett.,65:115-117.
[51]Julia M.Phillips,R.J.Cava,G.A.Thomas,et al.1995.Zinc-indium-oxide:A high conductivity transparent conducting oxide[J].Appl.Phys.Lett.,67:2246-2248.
[52]A.L.Dawar,and J.C.Joshi.1984.Semiconducting transparent thin films:their properties and applications[J].J.Mater.Sci.,19:1-23.
[53]X.Wu,T.J.Coutts,and W.P.Mulligan.1997.Properties of transparent conducting oxides formed from CdO and ZnO alloyed with Sn02 and In_2O_3[J].J.Vac.Sci.Technol.A,15:1057-1062.
[54]K.Tominaga,T.Murayama,I.Mori,et al.2000,Conductive transparent films deposited by simultaneous sputtering of zinc-oxide and indium-oxide targets[J].Vacuum,59:546-552
[55]N.Naghavi,C.Marcel,L.Dupont,et al.2000.Structural and physical characterisation of transparent conducting pulsed laser deposited In_2O_3-ZnO thin films[J].J.Mater.Chem.,10:2315-2319.
[56]G.B.Palmer,K.R.Poeppelmeier,T.O.Mason.1997.Conductivity and transparency of ZnO/SnO_2 cosubstituted In_2O_3[J].Chem.Mater.,9:3121-3126.
[57]A.Kudo,H.Yanagi,H.Hosono,et al.1998.Enhancement of carrier generation in MaIn_2O_4 thin film prepared by pulsed laser deposition technique[J].Mater.Sci.& Eng.B,54:51-54
[58]T.Minami,H.Sonohara,S.Takata,et al.1994.Highly transparent and conductive zinc-stannate thin-films prepared by RF magnetron sputteringfj].Jpn.J.Appl.Phys.,33:L1693-L1696.
[59]T.Minami,H.Sonohara,T.Kakumu,et al.1995.Highly transparent and conductive Zn_2In_2O_5 thin-films prepared by RF magnetron sputtering[J].Jpn.J.Appl.Phys.,34:L971-L974.
[60]T.Minami,S.Tsukada,Y.Minamino,et al.2005.Preparation of transparent and conductive multicomponent Zn-In-Sn oxide thin films by vacuum arc plasma evaporation[J].J.Vac.Sci.Technol.A,23:1128-1132.
[61]D.R.Kammler,B.J.Harder,N.W.Hrabe,et al.2002.Subsolidus phase relations and transparent conductors in the Cadmium-Indium-Tin oxide system[J].J.Am.Ceram.Soc,85:2345-2352.
[62]H.Kawazoe,M.Yasukawa,H.Hyodo,et al.1997.P-type electrical conduction in transparent thin films of CuAlO_2[J].Nature,389:939-942.
[63]H.Kawazoe,H.Yasukawa,K.Ueda,et al.2000.Transparent p-type conducting oxides:Design and fabrication of p-n heterojunctions[J].MRS Bulletin.,25:28-36.
[64]H.Yanagi,H.Kawazoe,A.Kudo,et al.2000.Chemical design and thin film preparation of p-type conductive transparent oxides[J].J.Electroceram.,4:407-414.
[65]K.Ueda,T.Hase,H.Kawazoe et al.2001.Epitaxial growth of transparent p-type conducting CuGaO_2 thin films on sapphire (001)substrates by pulsed laser deposition[J].J.Appl.Phys.,89:790-793.
[66]J.Tate,M.K.Jayaraj,A.D.Draeseke,et al.2002.p-Type oxides for use in transparent diodes[J].Thin Solid Films,411:119-124.
[67]H.Yanagi,T.Hase,S.Ibuki,et al.2001.Bipolarity in electrical conduction of transparent oxide semiconductor CuInO_2 with delafossite structure[J].Appl.Phys.Lett.,78:1583-1585.
[68]B.J.Ingram,B.J.Harder,N.W.Hrabe,et al.2004.Transport and defect mechanisms in cuprous delafossites[J].Chem.Mater.,16:5616-5629.
[69]Y.Kakehi,S.Nakao,K.Satoh,et al.2003.Properties of copper-scandium oxide thin films prepared by pulsed laser deposition[J].Thin Solid Films,445:294-298.
[70]N.Duan,A.W.Sleight,M.K.Jayaraj,et al.2000.Transparent p-type conducting CuScO_(2+x)films[J].Appl.Phys.Lett.,77:1325-1326.
[71]R.Nagarajan,A.D.Draeseke,A.W.Sleight,et al.2001.p-Type conductivity in CuCr_(1-x)Mg_xO_2 films and powders[J].J.Appl.Phys.,89:8022-8025.
[72]M.K.Jayaraj,A.D.Draeseke,J.Tate,et al.2001.p-Type transparent thin films of CuY_(1-x)Ca_xO_2[J].Thin Solid Films,37:244-248.
[73]A.Kudo,H.Yanagi,H.Hosono et al.1998.SrCu_2O_2:A p-type conductive oxide with wide band gap[J].Appl.Phys.Lett.,73:220-222.
[74]J.M.Bian,X.M.Li.X.D.Gao,et al.2004.Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis[J].Appl.Phys.Lett.,84:541-543
[75]C.H.Park,D.J.Chadi.1995.Bulk lattice instability in Ⅱ-Ⅵ semiconductors and its effect on impurity compendation.Phys.Rev.Lett.,75:1134-1137.
[76]D.K.Hwang,H.S.Kim,J.H.Lim,et al.2005.Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering[J].Appl.Phys.Lett.,86:151917-151919.
[77]J.M.Bian,X.M.Li.X.D.Gao,et al.2004.p-Type ZnO films by monodoping of nitrogen and ZnO-based p-n homojunctions[J].Appl.Phys.Lett.,85:4070-4072.
[78]H.Sato,T.Minami,S.Takata,et al.1993.Transparent conducting p-type NiO thin films prepared by magnetron sputtering[J].Thin Solid Films,236:27-31.
[79]T.Maeda,Y.Koide,M.Murakami.1999.Effects of NiO on electrical properties of NiAu-based ohmic contacts for p-type GaN[J].Appl.Phys.Lett.,75:4145-4147.
[80]B.Pejova,T.Kocareva,M.Najdoski,et al.2000.A solution growth route to nanocrystalline nickel oxide thin films[J],Appl.Sur.Sci,165:271-278.
[81]Z.M.Jarzebski.1982.Preparation and physical properties of transparent conducting oxide films[J].Phys.Statue Solidi A,71:13-41.
[82]H.Ohta,M.Orita,and M.Hirano.2000.Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia (100)by pulsed-laser deposition[J].Appl.Phys.Lett.,76:2740-2742.
[83]S.Zoppel,H.Huber,and G.A.Reider.2007.Selective ablation of thin Mo and TCO films with femtosecond laser pulses for structuring thin film solar cells[J].Appl.Phys.A,89:161-163.
[84]Kenichi IGA.2008.Vertical-Cavity Surface-Emitting Laser:Its Conception and Evolution[J].Jpn.J.Appl.Phys.,47:1-10.
[85]M.W.J.Prins,K.-O.Grosse-Holz,G.Muller,et al.1996.A ferroelectric transparent thin-film transistor[J].Appl.Phys.Lett.,68:3650-3652.
[86]K.Nomura,H.Ohta,K.Ueda,et al.2003.Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor[J].Science,300:1269-1272.
[87]E.Dagotto,T.Hotta,and A.Moreo.2001.Colossal magnetoresistant materials:The key role of phase separation[J].Phys.Rep.,344:1-153.
[88]M.B.Salamon,M.Jaime.2001.The physics of manganites:Structure and transport[J].Rev.Mod.Phys.,73:583-628.
[89]J.G.Bednorz,K.A.Muller.1986.Possible high T_c superconductivity in the Ba-La-Cu-O system[J].Z.Phys.B-Condensed mater.,64:189-193.
[90]M.K.Wu,J.R.Ashburn,C.J.Torng,et al.Superconductivity at 93K in a new mixed-phase Y-Ba-Cu-O compound system at ambient pressure[J].Phys.Rev.Lett.,58:908-910.
[91]周午纵.1999.高温超导基础研究[M].上海:上海科学技术出版社,15-17.
[92]Y.Liu,S.L.Wan,X.G.Li.2007.Excess oxygen doping in chemically oxidized La_2CuO_(4+δ)films studied by x-ray diffraction and Raman scattering[J].Supercond.Sci.Techinol.,20:870-874.
[93]Y.Q.Zhang,J.F.Qu,X.Q.Xiang,et al.2007.Modulation of superconductivity and charge stripes by compressive strain in La_(1.44)Nd_(0.4)Sr_(0.16)CuO_4 films[J].Physic C,1388:460-462.
[94]H.Zhang,Y.Liu,H.L.Li,et al.2005.Effects of solid solution on the superconducting properties of Gd-Ba-Cu-O superconductors[J].Supercond.Sci.Technol.,18:1317-1322.
[95]H.S.Yang,Y.S.Chai,J.Liu,et al.2004.Anomalous thermopower of the electron-doped superconductor,Sm_(2-x)Ce_xCuO_4[J].Physica C,403:203-208.
[96]X.H.Chen,Z.Sun,K.Q.Wang,et al.2001.Transport properties and specific heat of RuSr_2GdCu_2O_8 and RuSr_xGd_(1.4)Ce_(0.6)Cu_2O_y in magnetic field[J].Phys.Rev.B,63:64506-64509
[97]X.H.Chen,S.Y.Li,K.Q.Ruan,et al.1999.Effect of doping on anisotropic resistivities in single crystals Bi_2Sr_2CaCu_2O_(8+δ) with Fe,Co,and Ni[J].Phys.Rev.B,60:15339-15344.
[98]X.H.Chen,C.H.Wang,G Y.Wang,et al.2005.Thermal hysteresis and anisotropic magnetoresistance in antiferromagnetic Nd_(2-x)Ce_xCuO_4[J].Phys.Rev.B,72:064517-064521.
[99]S.Y.Li,L.Taillefer,C.H.Wang,et al.2005.Ballistic magnon transport and phonon scattering in the antiferromagnet Na_2CuO_4[J].Phys.Rev.Lett.,95:156603-156606.
[100]X.F.Sun,S.Ono,Y.Abe,et at.2006.Electronic inhomoeneity and breakdown of the universal thermal conductivity in cuprate superconductors[J].Phys.Rev.Lett.,96:017008-017011.
[101]X.F.Sun,K.Segawa,and Y.Ando.2005.Low-temperature nodal-quasiparticle transport in lightly doped YBa_2Cu_3O_y near the edge of the superconducting doping regime[J].Phys.Rev.B,72:100502-100505.
[102]X.F.Sun,K.Segawa,and Y.Ando.2004.Metal-to-Insulator crossover in YBa_2Cu_3O_y probed by low-temperature quasiparticle heat transport[J].Phys.Rev.Lett.,93:107001-107004.
[103]X.F.Sun,Y.Kurita,T.Suzuki,et al.2004.Thermal conductivity of Pr_(1.3-x)La_(0.7)Ce_xCuO_4single crystals and signatures of stripes in an electron-doped cuprate[J].Phys.Rev.Lett.,92:047001-047004.
[104]X.F.Sun,S.Komiya,J.Takeya,et al.Magnetic-Field-Induced localization of quasiparticles in underdoped La_(2-x)Sr_xCuO_4 single crystals[J].Phys.Rev.Lett.,90:117004-117007.
[105]G.H.Jonker,and J.H.Van Santen.1950.Ferromagnetic compounds of manganese with perovskite structure[J].Phyca,16:337-349.
[106]S.W.Jin,G.Y.Gao,Z.Z.Yin,et al.2008.Shear-strain-induced low symmetry phase and domain ordering in epitaxial La_(0.7)Sr_(0.3)MnO_3 thin films[J].Appl.Phys.Lett.,92:261901-261903.
[107]S.W.Jin,G.Y.Gao,W.B.Wu,et al.2007.Effect of angular-distortion-induced strain on structureal and transport properties of epitaxial La_(0.7)Sr_(0.3)MnO_3 thin-films[J].J.Phys.D:Appl.Phys.,40:1-5.
[108]S.W.Jin,G.Y.Gao,Z.Z.Yin,et al.2007.Strain state evolution and thickness-dependent properties of epitaxial Nd_(0.7)Sr_(0.3)MnO_3 films[J].Phys.Rev.B,75:212401-212404.
[109]G.Y.Gao,S.W.Jin,W.B.Wu.2007.Lattice-mismatch-strain induced inhomogeneities in epitaxial La_(0.7)Ca_(0.3)MnO_3 films[J].Appl.Phys.Lett.,90:012509-012511.
[110]G.Y.Gao,Z.Z.Yin,Z.Huang,et al.2008.Observation of thickness-dependent lattice distortion in epitaxial orthorhombic La_(0.67)Ca_(0.33)MnO_3/NdGaO_3(110) by x-ray reciprocal space mapping[J].J.Phys.D:Appl.Phys.,15:152001-152004.
[111]钟维烈.1996.铁电体物理学[M].北京:科学出版社,22-44.
[112]W.B.Wu,K.H.Wong,and C.L.Choy.2000.Low-temperature growth of epitaxial LaNiO_3/Pb(Zr_(0.52)Ti_(0.48))O_3/LaNiO_3 on Si(001) by pulsed-laser deposition[J].J.Vac.Sci.Technol.A,18:79-82.
[113]W.B.Wu,K.H.Wong,C.L.Mak,et al.2000.Epitaxial Pb(Zr_(0.52)Ti_(0.48))O_3/La_(0.35)Nd_(0.35)Sr_(0.3)MnO_3 heterostructures for fabrication of ferroelectric field-effect transistor[J].J.Appl.Phys,88:2068-2071.
[114]W.B.Wu,K.H.Wong,C.L.Mak,et al.2000.Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide La_(0.7)Sr_(0.3)MnO_3/Pb(Zr_(0.52)Ti_(0.48))O_3/La_(0.7)Sr_(0.3)MnO_3thin-film capacitors[J].J.Vac.Sci.Technol.A,18:2412-2416.
[115]W.B.Wu,K.H.Wong,C.L.Choy,et al.2000.Top-interface-controlled fatigue of epitaxial Pb(Zr_(0.52)Ti_(0.48))O_3 ferroelectric thin films on La_(0.7)Sr_(0.3)MnO_3 electrodes[J].Appl.Phys.Lett.,77:3441-3443.
[116]W.B.Wu,K.H.Wong,and C.L.Choy.2004.Interface-oxygen-loss-controlled voltage offsets in epitaxial Pb(Zr_(0.52)Ti_(0.48))O_3 thin-film capacitors with La_(0.7)Sr_(0.3)MnO_3 electrodes[J].Appl.Phys.Lett.,85:5013-5015.
[117]H.Schmid.1975.Magnetoelectric interaction phenomena in crastals[M].England:Gordon and Breach Science Publishers.
[118]N.A.Hill.2000.Why are there so few magnetic ferroelectrics[J].J.Phys.Chem.B,104:6694-6709.
[119]J.F.Li,J.L.Wang,R.Ramesh,et al.2004.Dramatically enhanced polarization in (001),(101),and (111)BiFeO3 thin films due to epitaxial-induced transitions[J].Appl.Phys.Lett.,84:5261-5263.
[120]J.Wang,J.B.Neaton,R.Ramesh,et al.2003.Epitaxial BiFeO_3 multiferroic thin film heterostructures[J].Science,299:1719-1722.
[121]P.Ravindran,R.Vidya,A.Kjekshus,et al.2006.Theoretical investigation of magnetoelectric behavior in BiFeO_3[J].Phys.Rev.B,74:224412-224429.
[122]M.M.Kumar,V.R.Palkar.2000.Ferroelectricity in a pure BiFeO_3 ceramic[J].Appl.Phys.Lett.,76:2764-2766.
[123]D.H.Wang,W.C.Goh,M.Ning,et al.2006.Effect of Ba doping on magnetic,ferroelectric,and magnetoelectric properties in mutiferroic BiFeO_3 at room temperature[J].Appl.Phys.Lett.,88:212907-212909.
[124]Y.H.Lee,J.M.Wu,C.H.Lai.2006.Influence of La doping in multiferroic properties of BiFeO_3 thin films[J].Appl.Phys.Lett.,88:042903-042905.
[125]G.D.Hu,X.Cheng,W.B.Wu,et al.2007.Effects of Gd substitution on structure and ferroelectric properties of BiFeO_3 thin films prepared using metal organic decomposition[J].Appl.Phys.Lett.,91:232909-232911.
[126]G.D.Hu,S.H.Fan,C.H.Yang,et al.2008.Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFeO_3 thin film [J].Appl.Phys.Lett.,92:192905-192907.
[127]J.K.Kim,S.S.Kim,W.J.Kim.2006.Enhanced ferroelectric properties of Cr-doped BiFeO_3 thin films grown by chemical solution deposition[J].Appl.Phys.Lett.,88:132901-132903.
[128]Y.Wang,C.W.Nan.2006.Enhanced ferroelectricity in Ti-doped multiferroic BiFeO_3 thin films[J].Appl.Phys.Lett.,89:052903-052905.
[129]S.K.Singh,H.Ishiwara,K.Maruyama.2006.Room temperature ferroelectric properties of Mn-substituted BiFeO_3 thin films deposited on Pt electrodes using chemical solution deposition[J].Appl.Phys.Lett.,88:262908-262910.
[130]C.A.D.Araujo,J.D.Cuchiaro,J.F.Scott,et al.1995.Fatigue-free ferroelectric capacitors with platinum electrodes[J].Nature,374:627-629.
[131]J.F.Scott,C.A.D.Araujo.1989.Ferroelectric memories[J].Science,246:1400-1405.
[132]T.Noguchi,T.Hase,and Y.Miyasaka.1996.Analysis of the dependence of ferroelectric properties of Strontium Bismuth Tantalate(SBT) thin films on the composition and process temperature[J].Jpn.J.Appl.Phys.,35:4900-4904.
[133]H.H.Wang,F.Chen,S.Y.Dai,et al.2001.Sb-doped SrTiO_3 transparent semiconductor thin films[J].Appl.Phys.Lett.,78:1676-1678.
[134]H.H.Wang,D.F.Cui,S.Y.Dai,et al.2001.Optical and transport properties of Sb-doped SrTiO_3 thin flims[J].J.Appl.Phys.,90:4664-4667.
[135]J.H.Cho,and H.J.Cho.2001.Optical transparency of metallic La_(0.5)Sr_(0.5)TiO_(3+δ) thin films[J].Appl.Phys.Lett.,79:1426-1428.
[136]H.Z.Guo,L.F.Liu,Y.Y.Fei,et al.2003.Optical properties of p-type In-doped SrTiO_3thin films[J].J.Appl.Phys.,94:4558-4562.
[137]R.P.Wang,and C.J.Tao.2002.Nb-doped CaTiO_3 transparent semiconductor thin films[J].J.Crystal Growth,.245:63-66.
[138]H.Tetsuka,Y.J.Shan,K.Tezuka,et al.2006.Transparent conductive Cd_3TeO_6 thin films with perovskite structure[J].J.Vac.Sci.Technol.A,24:L4-L6.
[139]H.G.Burckhardt.1982.Cadmiumorthotellurat(Ⅵ) Cd_3TeO_6:ein pseudoorthorhombischer Kryolithim Vergleichmit Ca_3TeO_6[J].Acta Crystallogr.B,38:2450-2452.
[140]黄昆.1988.固体物理学.北京:高等教育出版社,325-377.
[141]徐毓龙.1991.氧化物与化合物半导体基础[M].西安:西安电子科技大学出版社,134-161。
[142]M.Buchanan,J.B.Webb,and D.F.Williams.1980.Preparation of conducting and transparent thin films of tin-doped indium oxide by magnetron sputtering[J].Appl.Phys.Lett.,37:213-215.
[143]J.R.Bellingham,W.A.Phillips,and C.J.Adkins.1992.Intrinsic performance limits in transparent conducting oxides[J].J.Mater.Sci.Lett.,11:263-265.
[144]P.S.Kireev.1978.Semiconductor Physics[M].Russia:Mir Publishers.
[145]K.F.Huang,T.M.Uen,Y.S.Gou,et al.1987.Temperature dependence of transport properties of evaporated indium tin oxide films[J].Thin Solid Films,148:7-15.
[146]J.Bruneaux,H.Cachet,M.Froment,et al.1991.Correlation between structural and electrical properties of sprayed tin oxide films with and without fluorine doping[J].Thin Solid Films,197:129-142.
[147]Y.Ohhata,F.Shinoki,and S.Yoshida.1979.Optical properties of r.f.reactive sputtered tin-doped In_2O_3 films[J].Thin Solid Films,59:255-261.
[148]K.B.Sundaram,and G.K.Bhagavat.1981.Optical absorption studies on tin oxide films[J].J.Phys.D:Appl.Phys.,14:921-925.
[149]E.Shanthi,V.Dutta,A.Banerjee,et al.1980.Electrical and optical properties of undoped and antimony-doped tin oxide films[J].J.Appl.Phys.,51:6243-6251.
[150]莫党.1996.固体光学[M].北京:高等教育出版社.
[151]T.Minami,H.Nanto,and S.Takata.1985.Optical properties of aluminum doped zinc oxide thin films prepared by rf magnetron sputtering[J].Jpn.J.Appl.Phys.,24:L605-L607.
[152]P.Drude.1901.The theory of optics[M].
[153]T.J.Counts,D.L.Yong,and X.N.Li.2000.Characterization of transparent conducting oxides[J].MRS Bulletin,25:58-65.
[154]W.J.Leng,C.R.Yang,H.Ji,et al.2006.Structure-related optical properties of (Pb,La)(Zr,Ti)O_3 thin films on indium tin oxide/quartz substrates[J].J.Appl.Phys.,100:083505-083510.
[155]沃纳主编.2005.半导体器件电子学[M].吕长志等译.第1版.北京:电子工业出版社,166-342.
[156]爱德华主编.1983.半导体器件基础[M].卢纪译.第1版.北京:人民教育出版社出版,160-168.
[157]刘洪图主编.2003.半导体材料物理[M].合肥:中国科学技术大学出版社.
[158]康华光主编.1999.电子技术基础模拟部分[M].第四版.北京:高等教育出版社.
[159]H.Sato,T.Minami,S.Takata,et al.1993.Transparent conducting p-type NiO thin-films prepared by magnetron sputtering[J].Thin Solid Films,236:27-31.
[160]A.Kudo,H.Yanagi,K.Ueda,et al.1999.Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors[J].Appl.Phys.Lett.,75:2851-2853.
[161](U|¨).(O|¨)zg(u|¨)r,Y.I.Alivov,C.Liu,et al.2005.A comprehensive review of ZnO materials and devices[J].J.Appl.Phys.,98:041301-041403.
[162]H.Ohta,M.Orita,and M.Hirano.2001.Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction,p-SrCu_2O_2 and n-ZnO[J].J.Appl.Phys.,89:5720-5725.
[163]H.Hosono,H.Ohta,K.Hayashi,et al.Near-UV emitting diodes based on a transparent p-n junction composed of heteroepitaxially grown p-SrCu_2O_2 and n-ZnO[J].J.Cryst.Growth,496:237-239.
[164]K.Tonooka,H.Bando and Y.Aiura.2003.Photovoltaic effect observed in transparent p-n heterojunctions based on oxide semiconductors[J].Thin Solid Films 445:327-331.
[165]Z.G.Ji,Z.J.He,Y.L.Song,et al.2004.A novel transparent pn~+ junction based on indium tin oxides[J].Thin Solid Films,460:324-326.
[166]T.Aoki,Y.Hatanaka,D.C.Look,et al.2000.ZnO diode fabricated by excimer-laser doping[J].Appl.Phys.Lett.,76:3257-3258.
[167]J.M.Bian,M.X.Li,C.Y.Zhang,et al.2004.Synthesis and characterization of two-layer-structured ZnO p-n homojunctions by ultrasonic spray pyrolysis[J].Appl.Phys.Lett.,84:3783-3785.
[168]S.Jang,J.J.Chen,B.S.Kang,et al.2005.Formation of p-n homojuctions in n-ZnO bulk single crystals by diffusion from a Zn_3P_2 source[J].Appl.Phys.Lett.,87:222113-222115.
[169]F.G.Zhu,L.P.Zhu,Z.Z.Ye,et al.2005.ZnO p-n homojunctions and ohmic contacts to AI-N-co-doped p-type ZnO[J].Appl.Phys.Lett.,87:092103-092105.
[170]S.J.Jiao,Z.Z.Zhang,M.Y.Lu,et al.ZnO p-n junction light-emitting diodes fabricated on sapphire substrates[J].Appl.Phys.Lett.,88:031911-031913.
[171]M.W.J.Prins,K.-O.Grosse-Holz,G.M(u|¨)ller,et al.1996.A ferroelectric transparent thin-films transistor[J].Appl.Phys.Lett.,68:3650-3652.
[172]Y.Ohya,T.Niwa,T.Ban,et al.2001.Thin film transistor of ZnO fabricated by chemical solution deposition[J].Jpn.J.Appl.Phys.,40:297-298.
[173]S.Masuda,K.Kitamura,Y.Okumura,et al.2003.Transparent thin film transistors using ZnO as an active channel layer and their electrical properties[J].J.Appl.Phys.,93:1624-1630.
[174]R.L.Hoffman,B.J.Norris,and J.F.Wager.2003.ZnO-based transparent thin-film transistors[J].Appl.Phys.Lett.,82:733-735.
[175]R.L.Hoffman.2004.ZnO-channel thin-film transistors:channel mobility[J].J.Appl.Phys.,95:5813-5819.
[176]F.M.Hossain,J.Nishii,S.Takagi,et al.2003.Modeling and simulation of polycrystalline ZnO thin-film transistors[J].J.Appl.Phys.,94:7768-7777.
[177]E.M.C.Fortunato,P.M.C.Barquinha,A.C.M.B.G.Pimentel,et al.2004.Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature[J].Appl.Phys.Lett.,85:2541-2543.
[178]I.D.kim,Y.W.Choi,and H.L.Tuller.2005.Low-voltage ZnO thin-film transistors with high-K Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 gate insulator for transparent and flexible electronics[J].Appl.Phys.Lett.,87:043509-043511.
[179]H.Q.Chiang,J.F.Wager,R.L.Hoffman,et al.2005.High mobility transparent thin-film transistors with amorphous zinc thin oxide channel layer[J].Appl.Phys.Lett.,86:013503-013505.
[180]C.J.Kao,Y.W.Kwon,Y.W.Heo,et al.2005.Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition[J].J.Vac.Sci.Technol.B,23:1024-1028.
[181]P.F.Carcia,R.S.Mclean,M.H.Reilly,et al.2003.Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering[J].Appl.Phys.Lett.,82:1117-1119.
[182]Y.Kwon,Y.Li,Y.W.Heo,et al.2004.Enhancement-mode thin-film field-effect transistor using phosphorus-doped(Zn,Mg)O channel[J].Appl.Phys.Lett.,84:2685-2687.
[183]C.B.Sawyer,and C.H.Tower.1930.Rochelle salt as a dielectric[J].Phys.Rev.,35:269-273.
[184]G.R.Fox,F.Chu,and T.Davenport.2001.Current and future ferroelectric non-volatile memory technology[J].J.Vac.Sci.Technol.B,19:1967-1971.
[185]M.Dawber,K.M.Rabe,and J.F.Scott.2005.Physics of thin-film ferroelectric oxides[J].Rev.Mod.Phys.,77:1083-1130.
[186]S.Y.Wu.1974.A new ferroelectric memory device,metal-ferroelectric-semiconductor transistor[J].IEEE Trans.Electron Devices,21:499-504.
[187]C.H.Huang,Y.K.Wang,H.T.Lue,et al.2004.Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr_(0.8)Bi_(2.5)Ta_(1.2)Nb_(0.8)O_9 thin films[J].J.Eur.Ceram.Soc.,24:2471-2476.
[188]J.M.Lee,K.T.Kim,and C.L.Kim.2004.Structural and electrical properties of metal-ferroelectric-insulator-semiconductor field-effect transistors using a Pt/Bi_(3.25)La_(0.75)Ti_3O_(12)/CeO_2/Si structure[J].Thin Solid Films,447-448:322-326.
[189]S.Sakai,R.Ilangovan.2004.Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance[J].IEEE Electron Device Lett.,25:369-371.
[190]R.Ramesh,J.Lee,T.Sands,et al.1994.Oriented ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on[001]Pt/SiO_2 Si substrates using a bismuth titanate template layer[J].Appl.Phys.Lett.,64:2511-2513.
[191]Y.Watanabe,M.Tanamura,and Y.Matsumots.1996.Memory retention and switching speed of ferroelectric field-effect in(Pb,La)(Ti,Zr)O_3/La_2CuO_4:Sr heterostructure[J].Jpn.J.Appl.Phys.,35:1564.
[192]S.Mathews,R.Ramesh,T.Venkatesan,et al.1997.Ferroelectric field effect transistor based on epitaxial perovskite heterostructures[J].Science,276:238-240.
[193]T.Wu,S.B.Ogale,J.E.Garrison,et al.2001.Electroresistance and electronic phase separation in mixed-valent manganites[J].Phys.Rev.Lett.,86:5998-6001.
[194]T.Kanki,Y.G.Park,H.Tanaka,et al.2003.Electrical-field control of metal-insulator transition at room temperature in Pb(Zr_(0.2)Ti_(0.8))O_3/La_(1-x)Ba_xMnO_3 field-effect transistor[J].Appl.Phys.Lett.,83:4860-4862.
[195]T.Zhao,S.B.Ogale.S.R.Shinde,et al.2004.Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si[J].Appl.Phys.Lett.,84:750-752.
[196]A.G.Schrott,J.A.Misewich,V.Nagarajan,et al.2003.Ferroelectric field-effect transistor with a SrRu_xTi_(1-x)O_3 channel[J].Appl.Phys.Lett.,82:4770-4772.
[197]C.H.Ann,R.H.Hammond,T.H.Geballe,et al.1997.Ferroelectric field effect in ultrathin SrRuO_3 films[J].Appl.Phys.Lett.,70:206-208.
[198]C.H.Ahn,J.M.Triscone,N.Archibald,et al.Ferroelectric field effect in epitaxial thin film oxide SrCuO_2/Pb(Zr_(0.52)Ti_(0.48))O_3 heterostructures[J].269:373-376.
[199]C.H.Ahn,J.M.Triscone,J.Mannhart.2003.Electric field effect in correlated oxide systems[J].Nature,424:1015-1018.
[200]K.S.Takahashi,M.Gabay,D.Jaccard,et al.2006.Local switching of two-dimensional superconductivity using the ferroelectric field effect[J],Nature,441:195-198.
[201]J.Ramdani,R.Droopad,Z.Yu,et al.2000.Interface characterization of high-quality SrTiO_3 thin films on Si(100)substrates grown by molecular beam epitaxy[J].Appl.Surf.Sci,159-160:127-133.
[202]X.J.Lou.2009.Polarization fatigue in ferroelectric thin films and related materials[J].J.Appl.Phys.,105:024101-024124.
[203]A.K.Tagantsev,I.Stolichnov,E.L.Colla,et al.2001.Polarization fatigue in ferroelectric films:Basic experimental findings,phenomenological scenarios,and microscopic fearures[J].J.Appl.Phys.,90:1387-1402.
[204]E.L.Colla,A.K.Tagantsev,D.Taylor,et al.1998.Field-adjusted suppression of the switching polarization in ferroelectric PZT thin films with Pt-electrodes[J].J.Korean Phys.Soc,32:S1353-S1356.
[205]A.V.Rao,S.A.Mansour,and A.L.Bement.1996.Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO)electrodes[J].Mater.Lett.,29:255-258.
[206]C.H.Seager,D.Mcintyre,B.A.Tuttle,et al.1995.Mechanisms for the operation of thin film transistors on ferroelectrics[J].Integr.Ferroelectr.,6:47-68.
[207]J.F.M.Cillessen,R.M.Wolf,J.B.Giesbers,et al.1996.Growth,structuring and characterization of all-oxide thin film devices prepared by pulsed laser deposition[J].Apl.Surf.Sci.,744-751:96-98.
[208]M.W.J.Prins,S.E.Zinnemers,J.F.M.Cillessen,et al.1996.Depletion-type thin-film transistors with a ferroelectric insulator[J].Appl.Phys.Lett.,70:27-29.
[209]T.Miyasako,M.Senoo,and E.Tokumitsu.2005.Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability[J].Appl.Phys.Lett.,86:162902-162904.
[210]I.E.Titkov,I.P.Pronin,I.A.Liniichuk,et al.2005.Transparent ferroelectric field effect transistor with a single-crystal SnO_2 channel[J].Integr.Ferroelectr.,72:53-60.
[1]D.S.Ginley,and C.Bright.2000.Transparent conducting oxides[J].Mater.Res.Soc.Bull.,25:15-18.
[2]H.Ohta,K.Nomura,H.Hiramatsu,et al.2003.Frontier of transparent oxide semiconductors[J].Solid-State Electron.,47:2261-2267.
[3]H.Hosono.2007.Recent progress in transparent oxide semiconductors:Materials and device application[J].Thin Solid Films,515:6000-6014.
[4]Y.Park,V.Choong,and Y.Gao.1996.Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy[J].Appl.Phys.Lett.,68:2699-2701.
[5]T.Minami.2000.New n-type transparent conducting oxides[J].MRS Bull.,25:38-44.
[6]M.L.Bernardi,L.E.Soledade,I.A.Santos,et al.2002.Influence of the concentration of Sb_2O_3 and the viscosity of the precursor solution on the electrical and optical properties of SnO_2 thin films produced by the pechini method[J].Thin Solid Films,405:228-233.
[7]K.L.Chopra,S.Major,D.K.Pandya.1983.Transparent conductors-a status review[J].Thin Solid Films,102:1-46.
[8]G.Frank,H.K(o|¨)stlin.1982.Electrical properties and defect model of tin-doped indium oxide layers[J].Appl.Phys.A,27:197-206.
[9]H.Ohta,M.Orita,and M.Hirano.2000.Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia(100) by pulsed-laser deposition[J].Appl.Phys.Lett.,76:2740-2742.
[10]Z.M.Jarzebski.1982.Preparation and physical properties of transparent conducting oxide films[J].Phys.Status.Solidi a,71:13-41.
[11]S.Zoppel,H.Huber,and G.A.Reider.2007.Selective ablation of thin Mo and TCO films with femtosecond laser pulses for structuring thin film solar cells[J].Appl.Phys.A,89:161-163.
[12]K.IGA.2008.Vertical-Cavity Surface-Emitting Laser:Its Conception and Evolution[J].Jpn.J.Appl.Phys.,47:1-10.
[13]M.W.J.Prins,K.-O.Grosse-Holz,G.M(u|¨)ller,et al.1996.A ferroelectric transparent thin-films transistor[J].Appl.Phys.Lett.,68:3650-3652.
[14]K.Nomura,H.Ohta,K.Ueda,et al.2003.Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor[J].Science,300:1269-1272.
[15]C.H.Ahn,J.-M.Triscone,and J.Mannhart.2003.Electric field effect in correlated oxide systems[J].Nature,424:1015-1018.
[16]O.Auciello,J.F.Scott,and R.Ramesh.1998.The physics of ferroelectric memories[J].Phys.Todady,51:22-27.
[17]K.D(o|¨)rr.2006.Ferromagnetic manganites:spin-polarized conduction versus competing interactions[J].J.Phys.D,39:R125-R150.
[18]B.N.Mbenkum,N.Ashkenov,M.Schubert,et al.2005.Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO_3-ZnO heterostructure grown by pulsed-laser deposition[J].Appl.Phys.Lett.,86:091904-091906.
[19]H.H.Wang,F.Chen,S.Y.Dai,et al.2001.Sb-doped SrTiO_3 transparent semiconductor thin films[J].Appl.Phys.Lett.,78:1676-1678.
[20]H.H.Wang,D.F.Cui,S.Y.Dai,et al.2001.Optical and transport properties of Sb-doped SrTiO_3 thin films[J].J.Appl.Phys.,90:4664-4667.
[21]J.H.Cho,and H.J.Cho.2001.Optical transparency of metallic La_(0.5)Sr_(0.5)TiO_(3+δ) thin films[J].Appl.Phys.Lett.,79:1426-1428.
[22]H.Z.Guo,L.F.Liu,Y.Y.Fei,et al.2003.Optical properties of p-type In-doped SrTiO_3 thin films[J].J.Appl.Phys.,94:4558-4562.
[23]R.P.Wang,and C.J.Tao.2002.Nb-doped CaTiO_3 transparent semiconductor thin films[J].J.Crystal Growth,.245:63-66.
[24]H.Tetsuka,Y.J.Shan,K.Tezuka,et al.2006.Transparent conductive Cd_3TeO_6 thin films with perovskite structure[J].J.Vac.Sci.Technol.A,24:L4-L6.
[25]L.Geske,V.Lorenz,T.M(u|¨)ller,et al.2005.Dielectric and electromechanical characterisation of fine-grain BaTi_(0.95)Sn_(0.05)O_3 ceramics sintered from glycolate-precursor powder[J].J.Eur.Ceram.Soc.,25:2537-2542.
[26]U.Lampe,J.Gerblinger,and H.Meixner.1995.Nitrogen oxide sensors based on thin films of BaSnO_3[J].Sens.Actuators B,26:97-98.
[27]S.W.Tao,F.Gao,X.Q.Liu,et al.2000.Ethanol-sensing characteristics of barium stannate prepared by chemical precipitation[J].Sens.Actuators B,71:223-227.
[28]K.Chiba,S.Makino,N.Mukaida,et al.2001.The effect of lattice matching between buffer layer and YBa_2Cu_3O_(7-δ) thin films on in-plane alignment of c-axis oriented thin films[J].IEEE Trans.Appl.Supercond.,11:2734-2737.
[29]H.Wakana,S.Adachi,A.Kamitani,et al.2005.Improvement in reproducibility of multilayer and junction process for HTS SFQ circuits[J].IEEE Trans.Appl.Supercond.,15:153-156.
[30]Y.Hinatsu.1996.Electron paramagnetic resonance of Pr~(4+) in BaCeO_3,BaZrO_3,BaSnO_3,and their solid solutions[J].J.Solid State Chem.,122:384-389.
[31]B.Ostrick,M.Fleischer,and H.Meixner.1997.High-temperature hall measurements on BaSnO_3 ceramics[J].J.Am.Ceram.Soc.,80:2153-2156.
[32]S.Upadhyay,O.Parkash,and D.Kumar.2004.Synthesis,structure and electrical behaviour of Lanthanum-doped barium stannate[J].J.Phys.D:Appl.Phys.,37:1483-1491.
[33]D.J.Singh,and D.A.Papaconstantopoulos.1991.Electronic structure of Ba(Sn,Sb)O_3:Absence of superconductivity[J].Phys.Rev.B,44:9519-9523.
[34]T.Huang,T.Nakamura,M.Itoh,et al.1995.Electrical properties of BaSnO_3 in substitution of antimony for tin and lanthanum for barium[J].J.Mater.Sci.,30:1556-1560.
[35]S.Upadhyay,O.Parkash,and D.Kumar.2001.Solubility of lanthanum,nickel and chromium in barium stannate[J].Mater.Lett.,49:251-255.
[36]S.Upadhyay,O.Parkash,and D.Kumar.2007.Dielectric relaxation and variable-range-hopping conduction in BaSn_(1-x)Cr_xO_3 system[J].J.Electroceram,18:45-55.
[37]S.Upadhyay.2008.Humidity-sensitive characteristic of Ba_(0.99)La_(0.01)SnO_3[J].Phys.Stat.Sol.(a),205:1113-1119.
[38]W.Ramadan,S.B.Ogale,S.Dhar,et al.2006.Substrate-induced strain effects on the transport properties of pulsed laser-deposited Nb-doped SrTiO_3 films[J].Appl.Phys.Lett.,88:142903-142905.
[1]B.Durand,and H.Loiseleur.1978.Crystal data for an ilmenite variety of calcium stannate CaSnO_3[J].J.Appl.Cryst.,11:289-290.
[2]J.Zhao,N.L.Ross,and R.J.Angel.2004.Tilting and distortion of CaSnO_3 perovskite to 7GPa determined from single-crystal X-ray diffraction[J].Phys.Chem.Miner.31:299-305.
[3]J.M.Henriques,E.W.S.Caetano,V.H.Freire,et al.2007.Structural,electronic,and optical absorption properties of orthorhombic CaSnO_3 through ab initio calculations[J].J.Phys.Condens.Matter.,19:106214-106222.
[4]A.M.Azad,L.L.W.Shyan,T.Y.Pang,et al.2000.Microstructural evolution in MSnO_3ceramics derived via self-heat-sustained(SHS) reaction technique[J].Ceram.Int.,26:685-692.
[5]A.Vegas,M.Vallet-Reg(?),J.M.Gonz(?)lez-Calber,et al.1986.The ASnO_3(A=Ca,Sr)perovskite[J].Acta Cryst.,B42:167-172.
[6]T.Endo,T.Masuda,H.Takizawa,et al.1992.Eu~(2+) Iuminescence in Sr_(n+1)Sn_nO_(3n+1) with layered perovskite structure[J].J.Mater.Sci.Lett.,11:1330-1332.
[7]W.F.Zhang,J.W.Tang,and J.H.Ye.2006.Photoluminescence and photocatalytic properties of SrSnO_3 perovskite[J].Chem.Phys.Lett.,418:174-178.
[8]B.Hadjarab,A.Bouguelia,and M.Trari.2007.Synthesis,physical and photo electrochemical characterization of La-doped SrSnO_3[J].J.Phys.Chem.Solids,68:1491-1499.
[9]M.K.Mahapatra,P.Singh,D.Kumar,et al.Synthesis,crystal structure,microstructure and electrical behaviour of systems Sr_(1-x)La_xSnO_3 and SrSn_(1-x)Ni_xO_3(x≤0.10)[J].Adv.Appl.Ceram.,105:280-284.
[10]K.S.Rob,K.H.Ryu,and C.H.Yo.1999.Nonstoichiometry and physical properties of the SrSn_(1-x)Fe_xO_(3-y) system[J].J.Solid State Chem.,142:288-293.
[11]O.Parkash,K.D.Mandal,C.C.Christopher,et al.1996.Dielectric properties of the Sr_(1-x)La_xSn_(1-x)Co_xO_3 system[J].J.Mater.Sci.,31:4705-4708.
[12]H.-M.Christen,L.A.Boatner,J.d.Budai,et al.1997.Semiconducting epitaxial films of metastable SrRu_(0.5)Sn_(0.5)O_3 grown by pulsed laser deposition[J].Appl.Phys.Lett.,70:2147-2149.
[13]N.F.Mott,E.A.Davis.1971.Electronic processes in non-crystalline materials[M].London:Oxford University Press.
[14]K.Nomura,H.Ohta,K.Ueda,et al.2003.Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor[J].Science,300:1269-1272.
[15]M.Snure and A.Tiwari.2007.Structural,electrical,and optical characterizations of epitaxial Zn_(1-x)Ga_xO films grown on sapphire(0001) substrate[J].J.Appl.Phys.,101:124912-124917.
[1]钟维烈.1996.铁电体物理学[M].北京:科学出版社,22-44.
[2]O.Auciello,J.F.Scott,and R.Ramesh.1998.The physics of ferroelectric memories[J].Phys.Today,51:22-27.
[3]J.F.Scott,C.A.D.Araujo.1989.Ferroelectric memories[J].Science,246:1400-1405.
[4]T.Zhao,S.B.Ogale.S.R.Shinde,et al.2004.Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si[J].Appl.Phys.Lett.,84:750-752.
[5]Gordon Thomas.1997.Materials science:Invisible circuits[J].Nature,389:907-908.
[6]H.Hosono.2007.Recent progress in transparent oxide semiconductors:Materials and device application[J].Thin Solid Films,515:6000-6014.
[7]A.L.Dawar,and J.C.Joshi.1984.Semiconducting transparent thin films:their properties and applications[J].J.Mater.Sci.,19:1-23.
[8]H.Kawazoe,H.Yasukawa,K.Ueda,et al.2000.Transparent p-type conducting oxides:Design and fabrication of p-n heterojunctions[J].MRS Bulletin.,25:28-36.
[9]A.V.Rao,S.A.Mansour,and A.L.Bement.1996.Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide(ITO) electrodes[J].Mater.Lett.,29:255-258.
[10]M.W.J.Prins,K.-O.Grosse-Holz,G.M(u|¨)ller,et al.1996.A ferroelectric transparent thin-film transistor[J].Appl.Phys.Lett.,68:3650-3652.
[11]C.H.Seager,D.Mcintyre,B.A.Tuttle,et al.1995.Mechanisms for the operation of thin film transistors on ferroelectrics[J].Integr.Ferroelectr.,6:47-68.
[12]M.W.J.Prins,S.E.Zinnemers,J.F.M.Cillessen,et al.1996.Depletion-type thin-film transistors with a ferroelectric insulator[J].Appl.Phys.Lett.,70:27-29.
[13]K.Nomura,H.Ohta,K.Ueda,et al.2003.Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor[J].Science,300:1269-1272.
[14]I.E.Titkov,I.P.Pronin,I.A.Liniichuk,et al.2005.Transparent ferroelectric field effect transistor with a single-crystal SnO_2 channel[J].Integr.Ferroelectr.,72:53-60.
[15]M.-W.Chu,I.Szafranisk,R.Scholz,et al.2004.Impact of misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites[J].Nature Mater.,3:87-90.
[16]J.W.Johnson,B.Luo,F.Ren,et al.2000.Gd_2O_3/GaN metal-oxide-semiconductor field-effect transistor[J].Appl.Phys.Lett.,77:3230-3232.
[17]S.P.Alpay,I.B.Misirlioglu,and V.Nagarajan.2004.Can interface dislocations degrade ferroelectric properties?[J].Appl.Phys.Lett.,85:2044-2046.
[18]Y.Watanabe.1999.Electrical transport through Pb(Zr,Ti)O_3 p-n and p-p heterostructures modulated by bound charges at a ferroelectric surface:Ferroelectric p-n diode[J].Phys.Rev.B,59:11257-11266.
[19]H.Yang,H.M.Luo,H.Wang,et al.2008.Rectifying current-voltage characteristics of BiFeO_3/Nb-doped SrTiO_3[J].Appl.Phys.Lett,92:102113-102115.
[20]S.M.Guo,Y.G.Zhao,C.M.Xiong,et al.2006.Rectifying Ⅰ-Ⅴ characteristic of LiNbO_3/Nb-doped SrTiO_3 heterojunction[J].Appl.Phys.Lett.,89:223506-223508.
[21]X.D.Qi,M.Wei,Y.Lin,et al.2005.High-resolution x-ray diffraction and transmission electron microscopy of multiferroic BiFeO_3 films[J].Appl.Phys.Lett.,86:071913-071915.
[22]M.Bibes,M.-J.Casanove,L.Balcells,et al.2002.Magnetotransport properties of fully strained epitaxial thin films of La_(2/3)Ca_(1/3)MnO_3 grown on SrTiO_3[J].Appl.Sur.Sci.,1-2:202-208.
[23]X.J.Lou.2009.Polarization fatigue in ferroelectric thin films and related materials [J].J.Appl.Phys.,105:024101-024124.
[24]A.K.Tagantsev,I.Stolichnov,E.L.Colla,et al.2001.Polarization fatigue in ferroelectric films:Basic experimental findings,phenomenological scenarios,and microscopic features[J].J.Appl.Phys.,90:1387-1402.
[25]X.F.Du,and I.W.Chen.1998.Fatigue of Pb(Zr_(0.53)Ti_(0.47))O_3 ferroelectric thin films[J].J.Appl.Phys,83:7789-7798.
[26]Y.Xiao,B.Vivek,and K.Bhattacharya.2005.Depletion layers and domain walls in semiconducting ferroelectric thin films[J].Phys.Rev.Lett,95:247603-247606.
[27]Z.Zhang,Y.H.Sun,Y.G.Zhao,et al.2008.Manganite thin film/ZnO nanowire (nanosheets)p-n junctions[J].Appl.Phys.Lett,92:103113-103115.
[28]Feng Chen,Q.Z.Liu,H.F.Wang,et al.2007.Polarization switching and fatigue in Pb(Zr_(0.52)Ti_(0.48))O_3 films sandwiched by oxide electrodes with different carrier types[J].Appl.Phys.Lett,90:192907-192909.
[29]J.Wang,J.B.Neaton,R.Ramesh,et al.2003.Epitaxial BiFeO_3 multiferroic thin film heterostructures[J].Science,299:1719-1722.
[30]S.K.Singh,H.Ishiwara,K.Maruyama.2006.Room temperature ferroelectric properties of Mn-substituted BiFeO_3 thin films deposited on Pt electrodes using chemical solution deposition[J].Appl.Phys.Lett,88:262908-262910.
[31]S.R.Basu,L.W.Martin,Y.H.Chu,et al.2008.Photoconductivity in BiFeO_3 thin films[J].Appl.Phys.Lett,92:091905-091907.
[32]R.F.Pierret.1996.Semiconductor device fundamentals[M].New York:Addison-Wesley.
[33]J.Yuan,H.Wu,L.X.Cao,et al.2007.Metallic oxide p-i-n junctions with ferroelectric as the barrier[J].Appl.Phys.Lett.,Appl.Phys.Lett.,90:102113-102115.
[34]F.X.Hu,J.Gao,J.R.Sun,et al.2003.Good rectifying characteristic in p-n junctions composed of La_(0.66)Ca_(0.33)MnO_(3-δ)/Nb-0.7 wt%-doped SrTiO3[J].Appl.Phys.Lett.,83:1869-1871.
[35]刘洪图主编.2003.半导体材料物理[M].合肥:中国科学技术大学出版社.
[36]J.F.Scott.1999.Device physics of ferroelectric thin-film memories[J].Jpn.J.Appl.Phys.,38:2272-2274.
[37]S.K.Pandey,A.R.James,R.Raman,et al.2005.Structural,ferroelectric and optical properties of PZT thin films[J].Physica B:Condens.Matter.,369:135-142.
[38]H.Yang,H.M.Luo,H.Wang,et al.2008.Rectifying current-voltage characteristics of BiFeO_3/Nb-doped SrTiO_3 heterojunction[J].Appl.Phys.Lett.,92:102113-102115.
[39]D.A.Neamen.2003.Semiconductor physics and devices:Basic principles[M].3~(rd).New York:Mcgraw-Hill.350-359.
[40]M.M.Kumar,V.R.Palkar.2000.Ferroelectricity in a pure BiFeO_3 ceramic[J].Appl.Phys.Lett.,76:2764-2766.
[41]T.Choi,S.Lee,Y.J.Choi,et al.2009.Switchable ferroelectric diode and photovoltaic effect in BiFeO_3[J].Science,324:63-66.
[42]S.J.Clark,and J.Robertson.2007.Band gap and schottky barrier heights of multiferroic BiFeO_3[J].Appl.Phys.Lett.,90:132903-132905.
[2]K.Badeker.1907.Transparent conducting CdO obtained by thermal oxidation of sputtered Cd fiims[J].Physics,22:749-754.
[3]李言荣．2001．电子材料导论[M]．北京：清华大学出版社,301-307．
[4]J.C.C.Fan,T.B.Reed,and J.B.Goodenough.1974.Selective transparent film of dielectric/metal/dielectric multilayer system.Proceedings of Ninth Intersoc Energy Convers Engineering Coference[C].New York,USA,341.
[5]M.Bender,W.Seelig,J.Stollenwerk,et al.1998.Dependence of film composition and thicknesses on optical and electrical properties of ITO-metal-ITO multilayers [J].Thin Solid Films,326:67-71.
[6]D.R.Sahu,and J.L.Huang.2007.Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures [J].Microelectron.J.,38:299-303.
[7]D.R.Sahu,and J.L.Huang.2006.Characteristics of ZnO-Cu-ZnO multilayer films on copper layer properties[J].Appl.Surf.Sci.,253:827-832.
[8]D.R.Sahu,and J.L.Huang.2006.High quality transparent conductive ZnO/Ag/ZnO multilayer films deposited at room temperature[J].Thin Solid Films,515:876-879.
[9]D.R.Sahu,S.Y.Lin and J.L.Huang.2006.ZnO/Ag/ZnO multilayer films for the application of a very low resistance transparent electrode[J].Appl.Surf.Sci.,252:7509.
[10]D.R.Sahu,and J.L.Huang.2006.Design of ZnO/Ag/ZnO multilayer transparent conductive films[J].Mat.Sci.Eng.B.,130:295-299.
[11]X.J.Liu,X.Cai,N.Jiang,et al.2003.The design of ZnS/Ag/ZnS transparent conductive multilayer films[J].Thin Solid Films,441:200-206.
[12]H.M.Philips,Yunjun Li,Binglin Zhang,et al.1996.Reactive pulsed laser deposition and laser induced crystallization of SnO_2 transparent conducting thin films[J].Appl.Phys.A.,63:347-351.
[13]M.Batzill,U.Diebold.2005.The surface and materials science of tin oxide[J].Prog.Surf.Sci.,79:47-154.
[14]R.Dolbec,M.A.Serventi,R.G.Saint-Jacques,et al.2002.Microstructure and physical properties of nanostructured tin oxide thin films grown by means of pulsed laser deposition[J].Thin Solid films,419:230-236.
[15]S.Shanthi,C.Subramanian,P.Ramasamy.1999.Growth and characterization of antimony doped tin oxide thin films[J].J.Cryst.Growth,197:858-864.
[16]E.Elangovan,K.Ramamurthi.2005.Studies on micro-structural and electrical properties of spray-deposited fluorine-doped tin oxide thin films from low-cost precursor[J].Thin Solid Films,476:231-236.
[17]E.Shanthi,A.Banerjee,V.Dutta,et al.1982.Electrical and optical properties of tin oxide films doped with F and (Sb+F)[J].J.Appl.Phys.,53:1615-1621.
[18]M.L.Bernardi,L.E.Soledade,I.A.Santos,et al.2002.Influence of the concentration of Sb_2O_3 and the viscosity of the precursor solution on the electrical and optical properties of SnO_2 thin films produced by the pechini method[J].Thin Solid Films,405:228-233
[19]J.Dutta,J.Perrin,T.Emeraud,et al.1995.Pyrosol deposition of fluorine-doped tin dioxide thin films[J].J.Mater.Sci.,30:53-62.
[20]J.R.zhang,L.Gao.2004.Synthesis of antimony-doped tin oxide (ATO)nanoparticles by the nitrate-citrate combustion method[J].Materials Research Bulletin.,39:2249-2255.
[21]R.Rai,T.D.Senguttuvan,and S.T.Lakshmikumar.2006.Study of the electronic and optical bonding properties of doped SnO_2[J].Computational Materials Science,37:15-19.
[22]K.L.Chopra,S.Major,D.K.Pandya.1983.Transparent conductors-a status review[J].Thin Solid Films,102:1-46.
[23]J.L.Vossen.1971.Rf sputtered transparent conductors the system In_2O_3-SnO_2[J].RCA Rev.,32:289-296.
[24]J.N.Avaritsotis and R.P.Howson.1981.Composition and conductivity of fluorine-doped conducting indium oxide films prepared by reactive ion plating[J].Thin Solid Films,77:351-357.
[25]G.Frank,H.Kostlin.1982.Electrical properties and defect model of tin-doped indium oxide layers[J].Appl.Phys.A,27:197-206.
[26]N.Yamada,I.Yasui,Y.Shigesato,et al.1999.Doping mechanisms of Sn in In_2O_3 powder studied using Sn m(o|¨)ssbauer spectroscopy and X-ray diffraction[J].Jpn.J.Appl.Phys.,38:2856-2862.
[27]F.O.Adurodija,H.Izumi,T.Ishihara,et al.1999.Highly conducting indium tin oxide (ITO)thin films deposite by pulsed laser ablation[J].Thin Solid Films,350:79-84.
[28]J.Ederth,P.eszler,C.G.Granqvist,et al.2003.Indium tin oxide films made from nanoparticles:models for the optical and electrical properties.Thin Solid Films,445:199-206
[29]H.Ohta,M.Orita,H.Hosono,et al.2000.Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia (100)by pulsed-laser deposition[J]. Appl.Phys.Lett.,76:2740-2742.
[30]H.Ohta,M.Orita,H.Hosono,et al.2002.Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia[J].J.Appl.Phys.,91:3547-3550.
[31]H.Hosono.2007.Recent progress in transparent oxide semiconductors:Materials and device application[J].Thin Solid Films,515:6000-6014.
[32]H.Ohta,H.Mizoguchi,H.Hosono,et al.2003.Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh_2O_4/n-ZnO[J].Appl.Phys.Lett.,82:823-825.
[33]H.Yanagi,K.Ueda,H.Hosono,et al.2002.Fabrication of all oxide transparent p-n homojunction using bipolar CuInO_2 semiconducting oxide with delafossite structure[J].Solid State Commun.,121:15-17.
[34]H.Ohta,K.Kawamura,H.Hosono,et al.2000.Current injection emission from a transparent p-n junction composed of p-SrCu_2O_2/n-ZnO[J].Appl.Phys.Lett.,77:475-477.
[35]H.Ohta,M.Hirano,H.Hosono,et al.2003.Fabrication and photoresponse of pn-heterojunction diode composed of transparent oxide semiconductors,p-NiO and n-ZnO[J].Appl.Phys.Lett.,83:1029-1031.
[36]H.Ohta,T.Kambayashi,H.Hosono,et al.2003.Application of a transparent conductive substrate with an atomically flat and stepped surface to lateral growth of an organic molecule:vanadyl phthalocyanine[J].Adv.Mater.,15:1258-1262.
[37]H.Ohta,T.Kambayashi,H.Hosono,et al.2004.Transparent organic thin-film transistor with a laterally grown non-planar phthalocyanine channel[J].Adv.Mater.,16:312-316.
[38]A.F.Kohan,G.Ceder,D.Morgan,et al.2000.First-priciples study of native point defects in ZnO[J].Phys.Rev.B,61:15019-15027.
[39]D.C.Look,J.W.Hemsky,J.R.Sizelove.1999.Residual native shallow donor in ZnO[J].Phys.Rev.Lett,82:2552-2555.
[40]C.G.Van de Walle.2001.Deffect analysis and engineering in ZnO[J].Physica B:Condensed Matter.,308-310:899-903.
[41]C.G.Van de Walle.2000.Hydrogen as a cause of doping in zinc oxide[J].Phys.Rev.Lett.,85:1012-1015.
[42]H.Hirasawa,M.Yoshida,S.Nakamura,et al.2001.ZnO:Ga conducting-films grown by c arc-discharge ionplating[J].Solar Energy Materials and Solar Cells,67:231-236.
[43]H.Kim,A.Rique,J.S.Horwitz,et al.2000.Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices[J].Thin Solid Films, 377-378:798-802.
[44]Kim K J,Park Y R.2001.Large and abrupt optical band gap variation in In-doped ZnO[J].Appl.Phys.Lett,78:475-477.
[45]T.Minami.2000.New n-type transparent conducting oxides[J].MRS Bull.,25:38-44.
[46]T.Minami,Y.Takeda,T.Kakumu,et al.1997.Preparation of transparent conducting In_4Sn_3O_(12)thin films by DC magnetron sputtering[J].Thin Solid Films,308-309:13-18.
[47]T.Minami,T.Kakumu,S.Takata,et al.1996.Highly transparent and conductive ZnO-In_2O_3 thin films prepared by DC magnetron sputteringfj].Thin Solid Films,290-291:1-5.
[48]T.Minami,T.Yamamoto,and T.Miyata.2000.Highly transparent and conductive Rare Earth-doped ZnO thin films prepared by magnetron sputtering[J].Thin Solid Films,366:1-2.
[49]R.J.Cava,Julia M.Phillips,J.Kwo,et al.1994.GaInO_3:A new transparent conducting oxide[J].Appl.Phys.Lett.,64:2071-2702.
[50]Julia M.Phillips,J.Kwo,G.A.Thomas,et al.1994.Transparent conducting thin films of GaInO_3[J].Appl.Phys.Lett.,65:115-117.
[51]Julia M.Phillips,R.J.Cava,G.A.Thomas,et al.1995.Zinc-indium-oxide:A high conductivity transparent conducting oxide[J].Appl.Phys.Lett.,67:2246-2248.
[52]A.L.Dawar,and J.C.Joshi.1984.Semiconducting transparent thin films:their properties and applications[J].J.Mater.Sci.,19:1-23.
[53]X.Wu,T.J.Coutts,and W.P.Mulligan.1997.Properties of transparent conducting oxides formed from CdO and ZnO alloyed with Sn02 and In_2O_3[J].J.Vac.Sci.Technol.A,15:1057-1062.
[54]K.Tominaga,T.Murayama,I.Mori,et al.2000,Conductive transparent films deposited by simultaneous sputtering of zinc-oxide and indium-oxide targets[J].Vacuum,59:546-552
[55]N.Naghavi,C.Marcel,L.Dupont,et al.2000.Structural and physical characterisation of transparent conducting pulsed laser deposited In_2O_3-ZnO thin films[J].J.Mater.Chem.,10:2315-2319.
[56]G.B.Palmer,K.R.Poeppelmeier,T.O.Mason.1997.Conductivity and transparency of ZnO/SnO_2 cosubstituted In_2O_3[J].Chem.Mater.,9:3121-3126.
[57]A.Kudo,H.Yanagi,H.Hosono,et al.1998.Enhancement of carrier generation in MaIn_2O_4 thin film prepared by pulsed laser deposition technique[J].Mater.Sci.& Eng.B,54:51-54
[58]T.Minami,H.Sonohara,S.Takata,et al.1994.Highly transparent and conductive zinc-stannate thin-films prepared by RF magnetron sputteringfj].Jpn.J.Appl.Phys.,33:L1693-L1696.
[59]T.Minami,H.Sonohara,T.Kakumu,et al.1995.Highly transparent and conductive Zn_2In_2O_5 thin-films prepared by RF magnetron sputtering[J].Jpn.J.Appl.Phys.,34:L971-L974.
[60]T.Minami,S.Tsukada,Y.Minamino,et al.2005.Preparation of transparent and conductive multicomponent Zn-In-Sn oxide thin films by vacuum arc plasma evaporation[J].J.Vac.Sci.Technol.A,23:1128-1132.
[61]D.R.Kammler,B.J.Harder,N.W.Hrabe,et al.2002.Subsolidus phase relations and transparent conductors in the Cadmium-Indium-Tin oxide system[J].J.Am.Ceram.Soc,85:2345-2352.
[62]H.Kawazoe,M.Yasukawa,H.Hyodo,et al.1997.P-type electrical conduction in transparent thin films of CuAlO_2[J].Nature,389:939-942.
[63]H.Kawazoe,H.Yasukawa,K.Ueda,et al.2000.Transparent p-type conducting oxides:Design and fabrication of p-n heterojunctions[J].MRS Bulletin.,25:28-36.
[64]H.Yanagi,H.Kawazoe,A.Kudo,et al.2000.Chemical design and thin film preparation of p-type conductive transparent oxides[J].J.Electroceram.,4:407-414.
[65]K.Ueda,T.Hase,H.Kawazoe et al.2001.Epitaxial growth of transparent p-type conducting CuGaO_2 thin films on sapphire (001)substrates by pulsed laser deposition[J].J.Appl.Phys.,89:790-793.
[66]J.Tate,M.K.Jayaraj,A.D.Draeseke,et al.2002.p-Type oxides for use in transparent diodes[J].Thin Solid Films,411:119-124.
[67]H.Yanagi,T.Hase,S.Ibuki,et al.2001.Bipolarity in electrical conduction of transparent oxide semiconductor CuInO_2 with delafossite structure[J].Appl.Phys.Lett.,78:1583-1585.
[68]B.J.Ingram,B.J.Harder,N.W.Hrabe,et al.2004.Transport and defect mechanisms in cuprous delafossites[J].Chem.Mater.,16:5616-5629.
[69]Y.Kakehi,S.Nakao,K.Satoh,et al.2003.Properties of copper-scandium oxide thin films prepared by pulsed laser deposition[J].Thin Solid Films,445:294-298.
[70]N.Duan,A.W.Sleight,M.K.Jayaraj,et al.2000.Transparent p-type conducting CuScO_(2+x)films[J].Appl.Phys.Lett.,77:1325-1326.
[71]R.Nagarajan,A.D.Draeseke,A.W.Sleight,et al.2001.p-Type conductivity in CuCr_(1-x)Mg_xO_2 films and powders[J].J.Appl.Phys.,89:8022-8025.
[72]M.K.Jayaraj,A.D.Draeseke,J.Tate,et al.2001.p-Type transparent thin films of CuY_(1-x)Ca_xO_2[J].Thin Solid Films,37:244-248.
[73]A.Kudo,H.Yanagi,H.Hosono et al.1998.SrCu_2O_2:A p-type conductive oxide with wide band gap[J].Appl.Phys.Lett.,73:220-222.
[74]J.M.Bian,X.M.Li.X.D.Gao,et al.2004.Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis[J].Appl.Phys.Lett.,84:541-543
[75]C.H.Park,D.J.Chadi.1995.Bulk lattice instability in Ⅱ-Ⅵ semiconductors and its effect on impurity compendation.Phys.Rev.Lett.,75:1134-1137.
[76]D.K.Hwang,H.S.Kim,J.H.Lim,et al.2005.Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering[J].Appl.Phys.Lett.,86:151917-151919.
[77]J.M.Bian,X.M.Li.X.D.Gao,et al.2004.p-Type ZnO films by monodoping of nitrogen and ZnO-based p-n homojunctions[J].Appl.Phys.Lett.,85:4070-4072.
[78]H.Sato,T.Minami,S.Takata,et al.1993.Transparent conducting p-type NiO thin films prepared by magnetron sputtering[J].Thin Solid Films,236:27-31.
[79]T.Maeda,Y.Koide,M.Murakami.1999.Effects of NiO on electrical properties of NiAu-based ohmic contacts for p-type GaN[J].Appl.Phys.Lett.,75:4145-4147.
[80]B.Pejova,T.Kocareva,M.Najdoski,et al.2000.A solution growth route to nanocrystalline nickel oxide thin films[J],Appl.Sur.Sci,165:271-278.
[81]Z.M.Jarzebski.1982.Preparation and physical properties of transparent conducting oxide films[J].Phys.Statue Solidi A,71:13-41.
[82]H.Ohta,M.Orita,and M.Hirano.2000.Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia (100)by pulsed-laser deposition[J].Appl.Phys.Lett.,76:2740-2742.
[83]S.Zoppel,H.Huber,and G.A.Reider.2007.Selective ablation of thin Mo and TCO films with femtosecond laser pulses for structuring thin film solar cells[J].Appl.Phys.A,89:161-163.
[84]Kenichi IGA.2008.Vertical-Cavity Surface-Emitting Laser:Its Conception and Evolution[J].Jpn.J.Appl.Phys.,47:1-10.
[85]M.W.J.Prins,K.-O.Grosse-Holz,G.Muller,et al.1996.A ferroelectric transparent thin-film transistor[J].Appl.Phys.Lett.,68:3650-3652.
[86]K.Nomura,H.Ohta,K.Ueda,et al.2003.Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor[J].Science,300:1269-1272.
[87]E.Dagotto,T.Hotta,and A.Moreo.2001.Colossal magnetoresistant materials:The key role of phase separation[J].Phys.Rep.,344:1-153.
[88]M.B.Salamon,M.Jaime.2001.The physics of manganites:Structure and transport[J].Rev.Mod.Phys.,73:583-628.
[89]J.G.Bednorz,K.A.Muller.1986.Possible high T_c superconductivity in the Ba-La-Cu-O system[J].Z.Phys.B-Condensed mater.,64:189-193.
[90]M.K.Wu,J.R.Ashburn,C.J.Torng,et al.Superconductivity at 93K in a new mixed-phase Y-Ba-Cu-O compound system at ambient pressure[J].Phys.Rev.Lett.,58:908-910.
[91]周午纵.1999.高温超导基础研究[M].上海:上海科学技术出版社,15-17.
[92]Y.Liu,S.L.Wan,X.G.Li.2007.Excess oxygen doping in chemically oxidized La_2CuO_(4+δ)films studied by x-ray diffraction and Raman scattering[J].Supercond.Sci.Techinol.,20:870-874.
[93]Y.Q.Zhang,J.F.Qu,X.Q.Xiang,et al.2007.Modulation of superconductivity and charge stripes by compressive strain in La_(1.44)Nd_(0.4)Sr_(0.16)CuO_4 films[J].Physic C,1388:460-462.
[94]H.Zhang,Y.Liu,H.L.Li,et al.2005.Effects of solid solution on the superconducting properties of Gd-Ba-Cu-O superconductors[J].Supercond.Sci.Technol.,18:1317-1322.
[95]H.S.Yang,Y.S.Chai,J.Liu,et al.2004.Anomalous thermopower of the electron-doped superconductor,Sm_(2-x)Ce_xCuO_4[J].Physica C,403:203-208.
[96]X.H.Chen,Z.Sun,K.Q.Wang,et al.2001.Transport properties and specific heat of RuSr_2GdCu_2O_8 and RuSr_xGd_(1.4)Ce_(0.6)Cu_2O_y in magnetic field[J].Phys.Rev.B,63:64506-64509
[97]X.H.Chen,S.Y.Li,K.Q.Ruan,et al.1999.Effect of doping on anisotropic resistivities in single crystals Bi_2Sr_2CaCu_2O_(8+δ) with Fe,Co,and Ni[J].Phys.Rev.B,60:15339-15344.
[98]X.H.Chen,C.H.Wang,G Y.Wang,et al.2005.Thermal hysteresis and anisotropic magnetoresistance in antiferromagnetic Nd_(2-x)Ce_xCuO_4[J].Phys.Rev.B,72:064517-064521.
[99]S.Y.Li,L.Taillefer,C.H.Wang,et al.2005.Ballistic magnon transport and phonon scattering in the antiferromagnet Na_2CuO_4[J].Phys.Rev.Lett.,95:156603-156606.
[100]X.F.Sun,S.Ono,Y.Abe,et at.2006.Electronic inhomoeneity and breakdown of the universal thermal conductivity in cuprate superconductors[J].Phys.Rev.Lett.,96:017008-017011.
[101]X.F.Sun,K.Segawa,and Y.Ando.2005.Low-temperature nodal-quasiparticle transport in lightly doped YBa_2Cu_3O_y near the edge of the superconducting doping regime[J].Phys.Rev.B,72:100502-100505.
[102]X.F.Sun,K.Segawa,and Y.Ando.2004.Metal-to-Insulator crossover in YBa_2Cu_3O_y probed by low-temperature quasiparticle heat transport[J].Phys.Rev.Lett.,93:107001-107004.
[103]X.F.Sun,Y.Kurita,T.Suzuki,et al.2004.Thermal conductivity of Pr_(1.3-x)La_(0.7)Ce_xCuO_4single crystals and signatures of stripes in an electron-doped cuprate[J].Phys.Rev.Lett.,92:047001-047004.
[104]X.F.Sun,S.Komiya,J.Takeya,et al.Magnetic-Field-Induced localization of quasiparticles in underdoped La_(2-x)Sr_xCuO_4 single crystals[J].Phys.Rev.Lett.,90:117004-117007.
[105]G.H.Jonker,and J.H.Van Santen.1950.Ferromagnetic compounds of manganese with perovskite structure[J].Phyca,16:337-349.
[106]S.W.Jin,G.Y.Gao,Z.Z.Yin,et al.2008.Shear-strain-induced low symmetry phase and domain ordering in epitaxial La_(0.7)Sr_(0.3)MnO_3 thin films[J].Appl.Phys.Lett.,92:261901-261903.
[107]S.W.Jin,G.Y.Gao,W.B.Wu,et al.2007.Effect of angular-distortion-induced strain on structureal and transport properties of epitaxial La_(0.7)Sr_(0.3)MnO_3 thin-films[J].J.Phys.D:Appl.Phys.,40:1-5.
[108]S.W.Jin,G.Y.Gao,Z.Z.Yin,et al.2007.Strain state evolution and thickness-dependent properties of epitaxial Nd_(0.7)Sr_(0.3)MnO_3 films[J].Phys.Rev.B,75:212401-212404.
[109]G.Y.Gao,S.W.Jin,W.B.Wu.2007.Lattice-mismatch-strain induced inhomogeneities in epitaxial La_(0.7)Ca_(0.3)MnO_3 films[J].Appl.Phys.Lett.,90:012509-012511.
[110]G.Y.Gao,Z.Z.Yin,Z.Huang,et al.2008.Observation of thickness-dependent lattice distortion in epitaxial orthorhombic La_(0.67)Ca_(0.33)MnO_3/NdGaO_3(110) by x-ray reciprocal space mapping[J].J.Phys.D:Appl.Phys.,15:152001-152004.
[111]钟维烈.1996.铁电体物理学[M].北京:科学出版社,22-44.
[112]W.B.Wu,K.H.Wong,and C.L.Choy.2000.Low-temperature growth of epitaxial LaNiO_3/Pb(Zr_(0.52)Ti_(0.48))O_3/LaNiO_3 on Si(001) by pulsed-laser deposition[J].J.Vac.Sci.Technol.A,18:79-82.
[113]W.B.Wu,K.H.Wong,C.L.Mak,et al.2000.Epitaxial Pb(Zr_(0.52)Ti_(0.48))O_3/La_(0.35)Nd_(0.35)Sr_(0.3)MnO_3 heterostructures for fabrication of ferroelectric field-effect transistor[J].J.Appl.Phys,88:2068-2071.
[114]W.B.Wu,K.H.Wong,C.L.Mak,et al.2000.Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide La_(0.7)Sr_(0.3)MnO_3/Pb(Zr_(0.52)Ti_(0.48))O_3/La_(0.7)Sr_(0.3)MnO_3thin-film capacitors[J].J.Vac.Sci.Technol.A,18:2412-2416.
[115]W.B.Wu,K.H.Wong,C.L.Choy,et al.2000.Top-interface-controlled fatigue of epitaxial Pb(Zr_(0.52)Ti_(0.48))O_3 ferroelectric thin films on La_(0.7)Sr_(0.3)MnO_3 electrodes[J].Appl.Phys.Lett.,77:3441-3443.
[116]W.B.Wu,K.H.Wong,and C.L.Choy.2004.Interface-oxygen-loss-controlled voltage offsets in epitaxial Pb(Zr_(0.52)Ti_(0.48))O_3 thin-film capacitors with La_(0.7)Sr_(0.3)MnO_3 electrodes[J].Appl.Phys.Lett.,85:5013-5015.
[117]H.Schmid.1975.Magnetoelectric interaction phenomena in crastals[M].England:Gordon and Breach Science Publishers.
[118]N.A.Hill.2000.Why are there so few magnetic ferroelectrics[J].J.Phys.Chem.B,104:6694-6709.
[119]J.F.Li,J.L.Wang,R.Ramesh,et al.2004.Dramatically enhanced polarization in (001),(101),and (111)BiFeO3 thin films due to epitaxial-induced transitions[J].Appl.Phys.Lett.,84:5261-5263.
[120]J.Wang,J.B.Neaton,R.Ramesh,et al.2003.Epitaxial BiFeO_3 multiferroic thin film heterostructures[J].Science,299:1719-1722.
[121]P.Ravindran,R.Vidya,A.Kjekshus,et al.2006.Theoretical investigation of magnetoelectric behavior in BiFeO_3[J].Phys.Rev.B,74:224412-224429.
[122]M.M.Kumar,V.R.Palkar.2000.Ferroelectricity in a pure BiFeO_3 ceramic[J].Appl.Phys.Lett.,76:2764-2766.
[123]D.H.Wang,W.C.Goh,M.Ning,et al.2006.Effect of Ba doping on magnetic,ferroelectric,and magnetoelectric properties in mutiferroic BiFeO_3 at room temperature[J].Appl.Phys.Lett.,88:212907-212909.
[124]Y.H.Lee,J.M.Wu,C.H.Lai.2006.Influence of La doping in multiferroic properties of BiFeO_3 thin films[J].Appl.Phys.Lett.,88:042903-042905.
[125]G.D.Hu,X.Cheng,W.B.Wu,et al.2007.Effects of Gd substitution on structure and ferroelectric properties of BiFeO_3 thin films prepared using metal organic decomposition[J].Appl.Phys.Lett.,91:232909-232911.
[126]G.D.Hu,S.H.Fan,C.H.Yang,et al.2008.Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFeO_3 thin film [J].Appl.Phys.Lett.,92:192905-192907.
[127]J.K.Kim,S.S.Kim,W.J.Kim.2006.Enhanced ferroelectric properties of Cr-doped BiFeO_3 thin films grown by chemical solution deposition[J].Appl.Phys.Lett.,88:132901-132903.
[128]Y.Wang,C.W.Nan.2006.Enhanced ferroelectricity in Ti-doped multiferroic BiFeO_3 thin films[J].Appl.Phys.Lett.,89:052903-052905.
[129]S.K.Singh,H.Ishiwara,K.Maruyama.2006.Room temperature ferroelectric properties of Mn-substituted BiFeO_3 thin films deposited on Pt electrodes using chemical solution deposition[J].Appl.Phys.Lett.,88:262908-262910.
[130]C.A.D.Araujo,J.D.Cuchiaro,J.F.Scott,et al.1995.Fatigue-free ferroelectric capacitors with platinum electrodes[J].Nature,374:627-629.
[131]J.F.Scott,C.A.D.Araujo.1989.Ferroelectric memories[J].Science,246:1400-1405.
[132]T.Noguchi,T.Hase,and Y.Miyasaka.1996.Analysis of the dependence of ferroelectric properties of Strontium Bismuth Tantalate(SBT) thin films on the composition and process temperature[J].Jpn.J.Appl.Phys.,35:4900-4904.
[133]H.H.Wang,F.Chen,S.Y.Dai,et al.2001.Sb-doped SrTiO_3 transparent semiconductor thin films[J].Appl.Phys.Lett.,78:1676-1678.
[134]H.H.Wang,D.F.Cui,S.Y.Dai,et al.2001.Optical and transport properties of Sb-doped SrTiO_3 thin flims[J].J.Appl.Phys.,90:4664-4667.
[135]J.H.Cho,and H.J.Cho.2001.Optical transparency of metallic La_(0.5)Sr_(0.5)TiO_(3+δ) thin films[J].Appl.Phys.Lett.,79:1426-1428.
[136]H.Z.Guo,L.F.Liu,Y.Y.Fei,et al.2003.Optical properties of p-type In-doped SrTiO_3thin films[J].J.Appl.Phys.,94:4558-4562.
[137]R.P.Wang,and C.J.Tao.2002.Nb-doped CaTiO_3 transparent semiconductor thin films[J].J.Crystal Growth,.245:63-66.
[138]H.Tetsuka,Y.J.Shan,K.Tezuka,et al.2006.Transparent conductive Cd_3TeO_6 thin films with perovskite structure[J].J.Vac.Sci.Technol.A,24:L4-L6.
[139]H.G.Burckhardt.1982.Cadmiumorthotellurat(Ⅵ) Cd_3TeO_6:ein pseudoorthorhombischer Kryolithim Vergleichmit Ca_3TeO_6[J].Acta Crystallogr.B,38:2450-2452.
[140]黄昆.1988.固体物理学.北京:高等教育出版社,325-377.
[141]徐毓龙.1991.氧化物与化合物半导体基础[M].西安:西安电子科技大学出版社,134-161。
[142]M.Buchanan,J.B.Webb,and D.F.Williams.1980.Preparation of conducting and transparent thin films of tin-doped indium oxide by magnetron sputtering[J].Appl.Phys.Lett.,37:213-215.
[143]J.R.Bellingham,W.A.Phillips,and C.J.Adkins.1992.Intrinsic performance limits in transparent conducting oxides[J].J.Mater.Sci.Lett.,11:263-265.
[144]P.S.Kireev.1978.Semiconductor Physics[M].Russia:Mir Publishers.
[145]K.F.Huang,T.M.Uen,Y.S.Gou,et al.1987.Temperature dependence of transport properties of evaporated indium tin oxide films[J].Thin Solid Films,148:7-15.
[146]J.Bruneaux,H.Cachet,M.Froment,et al.1991.Correlation between structural and electrical properties of sprayed tin oxide films with and without fluorine doping[J].Thin Solid Films,197:129-142.
[147]Y.Ohhata,F.Shinoki,and S.Yoshida.1979.Optical properties of r.f.reactive sputtered tin-doped In_2O_3 films[J].Thin Solid Films,59:255-261.
[148]K.B.Sundaram,and G.K.Bhagavat.1981.Optical absorption studies on tin oxide films[J].J.Phys.D:Appl.Phys.,14:921-925.
[149]E.Shanthi,V.Dutta,A.Banerjee,et al.1980.Electrical and optical properties of undoped and antimony-doped tin oxide films[J].J.Appl.Phys.,51:6243-6251.
[150]莫党.1996.固体光学[M].北京:高等教育出版社.
[151]T.Minami,H.Nanto,and S.Takata.1985.Optical properties of aluminum doped zinc oxide thin films prepared by rf magnetron sputtering[J].Jpn.J.Appl.Phys.,24:L605-L607.
[152]P.Drude.1901.The theory of optics[M].
[153]T.J.Counts,D.L.Yong,and X.N.Li.2000.Characterization of transparent conducting oxides[J].MRS Bulletin,25:58-65.
[154]W.J.Leng,C.R.Yang,H.Ji,et al.2006.Structure-related optical properties of (Pb,La)(Zr,Ti)O_3 thin films on indium tin oxide/quartz substrates[J].J.Appl.Phys.,100:083505-083510.
[155]沃纳主编.2005.半导体器件电子学[M].吕长志等译.第1版.北京:电子工业出版社,166-342.
[156]爱德华主编.1983.半导体器件基础[M].卢纪译.第1版.北京:人民教育出版社出版,160-168.
[157]刘洪图主编.2003.半导体材料物理[M].合肥:中国科学技术大学出版社.
[158]康华光主编.1999.电子技术基础模拟部分[M].第四版.北京:高等教育出版社.
[159]H.Sato,T.Minami,S.Takata,et al.1993.Transparent conducting p-type NiO thin-films prepared by magnetron sputtering[J].Thin Solid Films,236:27-31.
[160]A.Kudo,H.Yanagi,K.Ueda,et al.1999.Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors[J].Appl.Phys.Lett.,75:2851-2853.
[161](U|¨).(O|¨)zg(u|¨)r,Y.I.Alivov,C.Liu,et al.2005.A comprehensive review of ZnO materials and devices[J].J.Appl.Phys.,98:041301-041403.
[162]H.Ohta,M.Orita,and M.Hirano.2001.Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction,p-SrCu_2O_2 and n-ZnO[J].J.Appl.Phys.,89:5720-5725.
[163]H.Hosono,H.Ohta,K.Hayashi,et al.Near-UV emitting diodes based on a transparent p-n junction composed of heteroepitaxially grown p-SrCu_2O_2 and n-ZnO[J].J.Cryst.Growth,496:237-239.
[164]K.Tonooka,H.Bando and Y.Aiura.2003.Photovoltaic effect observed in transparent p-n heterojunctions based on oxide semiconductors[J].Thin Solid Films 445:327-331.
[165]Z.G.Ji,Z.J.He,Y.L.Song,et al.2004.A novel transparent pn~+ junction based on indium tin oxides[J].Thin Solid Films,460:324-326.
[166]T.Aoki,Y.Hatanaka,D.C.Look,et al.2000.ZnO diode fabricated by excimer-laser doping[J].Appl.Phys.Lett.,76:3257-3258.
[167]J.M.Bian,M.X.Li,C.Y.Zhang,et al.2004.Synthesis and characterization of two-layer-structured ZnO p-n homojunctions by ultrasonic spray pyrolysis[J].Appl.Phys.Lett.,84:3783-3785.
[168]S.Jang,J.J.Chen,B.S.Kang,et al.2005.Formation of p-n homojuctions in n-ZnO bulk single crystals by diffusion from a Zn_3P_2 source[J].Appl.Phys.Lett.,87:222113-222115.
[169]F.G.Zhu,L.P.Zhu,Z.Z.Ye,et al.2005.ZnO p-n homojunctions and ohmic contacts to AI-N-co-doped p-type ZnO[J].Appl.Phys.Lett.,87:092103-092105.
[170]S.J.Jiao,Z.Z.Zhang,M.Y.Lu,et al.ZnO p-n junction light-emitting diodes fabricated on sapphire substrates[J].Appl.Phys.Lett.,88:031911-031913.
[171]M.W.J.Prins,K.-O.Grosse-Holz,G.M(u|¨)ller,et al.1996.A ferroelectric transparent thin-films transistor[J].Appl.Phys.Lett.,68:3650-3652.
[172]Y.Ohya,T.Niwa,T.Ban,et al.2001.Thin film transistor of ZnO fabricated by chemical solution deposition[J].Jpn.J.Appl.Phys.,40:297-298.
[173]S.Masuda,K.Kitamura,Y.Okumura,et al.2003.Transparent thin film transistors using ZnO as an active channel layer and their electrical properties[J].J.Appl.Phys.,93:1624-1630.
[174]R.L.Hoffman,B.J.Norris,and J.F.Wager.2003.ZnO-based transparent thin-film transistors[J].Appl.Phys.Lett.,82:733-735.
[175]R.L.Hoffman.2004.ZnO-channel thin-film transistors:channel mobility[J].J.Appl.Phys.,95:5813-5819.
[176]F.M.Hossain,J.Nishii,S.Takagi,et al.2003.Modeling and simulation of polycrystalline ZnO thin-film transistors[J].J.Appl.Phys.,94:7768-7777.
[177]E.M.C.Fortunato,P.M.C.Barquinha,A.C.M.B.G.Pimentel,et al.2004.Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature[J].Appl.Phys.Lett.,85:2541-2543.
[178]I.D.kim,Y.W.Choi,and H.L.Tuller.2005.Low-voltage ZnO thin-film transistors with high-K Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 gate insulator for transparent and flexible electronics[J].Appl.Phys.Lett.,87:043509-043511.
[179]H.Q.Chiang,J.F.Wager,R.L.Hoffman,et al.2005.High mobility transparent thin-film transistors with amorphous zinc thin oxide channel layer[J].Appl.Phys.Lett.,86:013503-013505.
[180]C.J.Kao,Y.W.Kwon,Y.W.Heo,et al.2005.Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition[J].J.Vac.Sci.Technol.B,23:1024-1028.
[181]P.F.Carcia,R.S.Mclean,M.H.Reilly,et al.2003.Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering[J].Appl.Phys.Lett.,82:1117-1119.
[182]Y.Kwon,Y.Li,Y.W.Heo,et al.2004.Enhancement-mode thin-film field-effect transistor using phosphorus-doped(Zn,Mg)O channel[J].Appl.Phys.Lett.,84:2685-2687.
[183]C.B.Sawyer,and C.H.Tower.1930.Rochelle salt as a dielectric[J].Phys.Rev.,35:269-273.
[184]G.R.Fox,F.Chu,and T.Davenport.2001.Current and future ferroelectric non-volatile memory technology[J].J.Vac.Sci.Technol.B,19:1967-1971.
[185]M.Dawber,K.M.Rabe,and J.F.Scott.2005.Physics of thin-film ferroelectric oxides[J].Rev.Mod.Phys.,77:1083-1130.
[186]S.Y.Wu.1974.A new ferroelectric memory device,metal-ferroelectric-semiconductor transistor[J].IEEE Trans.Electron Devices,21:499-504.
[187]C.H.Huang,Y.K.Wang,H.T.Lue,et al.2004.Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr_(0.8)Bi_(2.5)Ta_(1.2)Nb_(0.8)O_9 thin films[J].J.Eur.Ceram.Soc.,24:2471-2476.
[188]J.M.Lee,K.T.Kim,and C.L.Kim.2004.Structural and electrical properties of metal-ferroelectric-insulator-semiconductor field-effect transistors using a Pt/Bi_(3.25)La_(0.75)Ti_3O_(12)/CeO_2/Si structure[J].Thin Solid Films,447-448:322-326.
[189]S.Sakai,R.Ilangovan.2004.Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance[J].IEEE Electron Device Lett.,25:369-371.
[190]R.Ramesh,J.Lee,T.Sands,et al.1994.Oriented ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on[001]Pt/SiO_2 Si substrates using a bismuth titanate template layer[J].Appl.Phys.Lett.,64:2511-2513.
[191]Y.Watanabe,M.Tanamura,and Y.Matsumots.1996.Memory retention and switching speed of ferroelectric field-effect in(Pb,La)(Ti,Zr)O_3/La_2CuO_4:Sr heterostructure[J].Jpn.J.Appl.Phys.,35:1564.
[192]S.Mathews,R.Ramesh,T.Venkatesan,et al.1997.Ferroelectric field effect transistor based on epitaxial perovskite heterostructures[J].Science,276:238-240.
[193]T.Wu,S.B.Ogale,J.E.Garrison,et al.2001.Electroresistance and electronic phase separation in mixed-valent manganites[J].Phys.Rev.Lett.,86:5998-6001.
[194]T.Kanki,Y.G.Park,H.Tanaka,et al.2003.Electrical-field control of metal-insulator transition at room temperature in Pb(Zr_(0.2)Ti_(0.8))O_3/La_(1-x)Ba_xMnO_3 field-effect transistor[J].Appl.Phys.Lett.,83:4860-4862.
[195]T.Zhao,S.B.Ogale.S.R.Shinde,et al.2004.Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si[J].Appl.Phys.Lett.,84:750-752.
[196]A.G.Schrott,J.A.Misewich,V.Nagarajan,et al.2003.Ferroelectric field-effect transistor with a SrRu_xTi_(1-x)O_3 channel[J].Appl.Phys.Lett.,82:4770-4772.
[197]C.H.Ann,R.H.Hammond,T.H.Geballe,et al.1997.Ferroelectric field effect in ultrathin SrRuO_3 films[J].Appl.Phys.Lett.,70:206-208.
[198]C.H.Ahn,J.M.Triscone,N.Archibald,et al.Ferroelectric field effect in epitaxial thin film oxide SrCuO_2/Pb(Zr_(0.52)Ti_(0.48))O_3 heterostructures[J].269:373-376.
[199]C.H.Ahn,J.M.Triscone,J.Mannhart.2003.Electric field effect in correlated oxide systems[J].Nature,424:1015-1018.
[200]K.S.Takahashi,M.Gabay,D.Jaccard,et al.2006.Local switching of two-dimensional superconductivity using the ferroelectric field effect[J],Nature,441:195-198.
[201]J.Ramdani,R.Droopad,Z.Yu,et al.2000.Interface characterization of high-quality SrTiO_3 thin films on Si(100)substrates grown by molecular beam epitaxy[J].Appl.Surf.Sci,159-160:127-133.
[202]X.J.Lou.2009.Polarization fatigue in ferroelectric thin films and related materials[J].J.Appl.Phys.,105:024101-024124.
[203]A.K.Tagantsev,I.Stolichnov,E.L.Colla,et al.2001.Polarization fatigue in ferroelectric films:Basic experimental findings,phenomenological scenarios,and microscopic fearures[J].J.Appl.Phys.,90:1387-1402.
[204]E.L.Colla,A.K.Tagantsev,D.Taylor,et al.1998.Field-adjusted suppression of the switching polarization in ferroelectric PZT thin films with Pt-electrodes[J].J.Korean Phys.Soc,32:S1353-S1356.
[205]A.V.Rao,S.A.Mansour,and A.L.Bement.1996.Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO)electrodes[J].Mater.Lett.,29:255-258.
[206]C.H.Seager,D.Mcintyre,B.A.Tuttle,et al.1995.Mechanisms for the operation of thin film transistors on ferroelectrics[J].Integr.Ferroelectr.,6:47-68.
[207]J.F.M.Cillessen,R.M.Wolf,J.B.Giesbers,et al.1996.Growth,structuring and characterization of all-oxide thin film devices prepared by pulsed laser deposition[J].Apl.Surf.Sci.,744-751:96-98.
[208]M.W.J.Prins,S.E.Zinnemers,J.F.M.Cillessen,et al.1996.Depletion-type thin-film transistors with a ferroelectric insulator[J].Appl.Phys.Lett.,70:27-29.
[209]T.Miyasako,M.Senoo,and E.Tokumitsu.2005.Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability[J].Appl.Phys.Lett.,86:162902-162904.
[210]I.E.Titkov,I.P.Pronin,I.A.Liniichuk,et al.2005.Transparent ferroelectric field effect transistor with a single-crystal SnO_2 channel[J].Integr.Ferroelectr.,72:53-60.
[1]D.S.Ginley,and C.Bright.2000.Transparent conducting oxides[J].Mater.Res.Soc.Bull.,25:15-18.
[2]H.Ohta,K.Nomura,H.Hiramatsu,et al.2003.Frontier of transparent oxide semiconductors[J].Solid-State Electron.,47:2261-2267.
[3]H.Hosono.2007.Recent progress in transparent oxide semiconductors:Materials and device application[J].Thin Solid Films,515:6000-6014.
[4]Y.Park,V.Choong,and Y.Gao.1996.Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy[J].Appl.Phys.Lett.,68:2699-2701.
[5]T.Minami.2000.New n-type transparent conducting oxides[J].MRS Bull.,25:38-44.
[6]M.L.Bernardi,L.E.Soledade,I.A.Santos,et al.2002.Influence of the concentration of Sb_2O_3 and the viscosity of the precursor solution on the electrical and optical properties of SnO_2 thin films produced by the pechini method[J].Thin Solid Films,405:228-233.
[7]K.L.Chopra,S.Major,D.K.Pandya.1983.Transparent conductors-a status review[J].Thin Solid Films,102:1-46.
[8]G.Frank,H.K(o|¨)stlin.1982.Electrical properties and defect model of tin-doped indium oxide layers[J].Appl.Phys.A,27:197-206.
[9]H.Ohta,M.Orita,and M.Hirano.2000.Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia(100) by pulsed-laser deposition[J].Appl.Phys.Lett.,76:2740-2742.
[10]Z.M.Jarzebski.1982.Preparation and physical properties of transparent conducting oxide films[J].Phys.Status.Solidi a,71:13-41.
[11]S.Zoppel,H.Huber,and G.A.Reider.2007.Selective ablation of thin Mo and TCO films with femtosecond laser pulses for structuring thin film solar cells[J].Appl.Phys.A,89:161-163.
[12]K.IGA.2008.Vertical-Cavity Surface-Emitting Laser:Its Conception and Evolution[J].Jpn.J.Appl.Phys.,47:1-10.
[13]M.W.J.Prins,K.-O.Grosse-Holz,G.M(u|¨)ller,et al.1996.A ferroelectric transparent thin-films transistor[J].Appl.Phys.Lett.,68:3650-3652.
[14]K.Nomura,H.Ohta,K.Ueda,et al.2003.Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor[J].Science,300:1269-1272.
[15]C.H.Ahn,J.-M.Triscone,and J.Mannhart.2003.Electric field effect in correlated oxide systems[J].Nature,424:1015-1018.
[16]O.Auciello,J.F.Scott,and R.Ramesh.1998.The physics of ferroelectric memories[J].Phys.Todady,51:22-27.
[17]K.D(o|¨)rr.2006.Ferromagnetic manganites:spin-polarized conduction versus competing interactions[J].J.Phys.D,39:R125-R150.
[18]B.N.Mbenkum,N.Ashkenov,M.Schubert,et al.2005.Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO_3-ZnO heterostructure grown by pulsed-laser deposition[J].Appl.Phys.Lett.,86:091904-091906.
[19]H.H.Wang,F.Chen,S.Y.Dai,et al.2001.Sb-doped SrTiO_3 transparent semiconductor thin films[J].Appl.Phys.Lett.,78:1676-1678.
[20]H.H.Wang,D.F.Cui,S.Y.Dai,et al.2001.Optical and transport properties of Sb-doped SrTiO_3 thin films[J].J.Appl.Phys.,90:4664-4667.
[21]J.H.Cho,and H.J.Cho.2001.Optical transparency of metallic La_(0.5)Sr_(0.5)TiO_(3+δ) thin films[J].Appl.Phys.Lett.,79:1426-1428.
[22]H.Z.Guo,L.F.Liu,Y.Y.Fei,et al.2003.Optical properties of p-type In-doped SrTiO_3 thin films[J].J.Appl.Phys.,94:4558-4562.
[23]R.P.Wang,and C.J.Tao.2002.Nb-doped CaTiO_3 transparent semiconductor thin films[J].J.Crystal Growth,.245:63-66.
[24]H.Tetsuka,Y.J.Shan,K.Tezuka,et al.2006.Transparent conductive Cd_3TeO_6 thin films with perovskite structure[J].J.Vac.Sci.Technol.A,24:L4-L6.
[25]L.Geske,V.Lorenz,T.M(u|¨)ller,et al.2005.Dielectric and electromechanical characterisation of fine-grain BaTi_(0.95)Sn_(0.05)O_3 ceramics sintered from glycolate-precursor powder[J].J.Eur.Ceram.Soc.,25:2537-2542.
[26]U.Lampe,J.Gerblinger,and H.Meixner.1995.Nitrogen oxide sensors based on thin films of BaSnO_3[J].Sens.Actuators B,26:97-98.
[27]S.W.Tao,F.Gao,X.Q.Liu,et al.2000.Ethanol-sensing characteristics of barium stannate prepared by chemical precipitation[J].Sens.Actuators B,71:223-227.
[28]K.Chiba,S.Makino,N.Mukaida,et al.2001.The effect of lattice matching between buffer layer and YBa_2Cu_3O_(7-δ) thin films on in-plane alignment of c-axis oriented thin films[J].IEEE Trans.Appl.Supercond.,11:2734-2737.
[29]H.Wakana,S.Adachi,A.Kamitani,et al.2005.Improvement in reproducibility of multilayer and junction process for HTS SFQ circuits[J].IEEE Trans.Appl.Supercond.,15:153-156.
[30]Y.Hinatsu.1996.Electron paramagnetic resonance of Pr~(4+) in BaCeO_3,BaZrO_3,BaSnO_3,and their solid solutions[J].J.Solid State Chem.,122:384-389.
[31]B.Ostrick,M.Fleischer,and H.Meixner.1997.High-temperature hall measurements on BaSnO_3 ceramics[J].J.Am.Ceram.Soc.,80:2153-2156.
[32]S.Upadhyay,O.Parkash,and D.Kumar.2004.Synthesis,structure and electrical behaviour of Lanthanum-doped barium stannate[J].J.Phys.D:Appl.Phys.,37:1483-1491.
[33]D.J.Singh,and D.A.Papaconstantopoulos.1991.Electronic structure of Ba(Sn,Sb)O_3:Absence of superconductivity[J].Phys.Rev.B,44:9519-9523.
[34]T.Huang,T.Nakamura,M.Itoh,et al.1995.Electrical properties of BaSnO_3 in substitution of antimony for tin and lanthanum for barium[J].J.Mater.Sci.,30:1556-1560.
[35]S.Upadhyay,O.Parkash,and D.Kumar.2001.Solubility of lanthanum,nickel and chromium in barium stannate[J].Mater.Lett.,49:251-255.
[36]S.Upadhyay,O.Parkash,and D.Kumar.2007.Dielectric relaxation and variable-range-hopping conduction in BaSn_(1-x)Cr_xO_3 system[J].J.Electroceram,18:45-55.
[37]S.Upadhyay.2008.Humidity-sensitive characteristic of Ba_(0.99)La_(0.01)SnO_3[J].Phys.Stat.Sol.(a),205:1113-1119.
[38]W.Ramadan,S.B.Ogale,S.Dhar,et al.2006.Substrate-induced strain effects on the transport properties of pulsed laser-deposited Nb-doped SrTiO_3 films[J].Appl.Phys.Lett.,88:142903-142905.
[1]B.Durand,and H.Loiseleur.1978.Crystal data for an ilmenite variety of calcium stannate CaSnO_3[J].J.Appl.Cryst.,11:289-290.
[2]J.Zhao,N.L.Ross,and R.J.Angel.2004.Tilting and distortion of CaSnO_3 perovskite to 7GPa determined from single-crystal X-ray diffraction[J].Phys.Chem.Miner.31:299-305.
[3]J.M.Henriques,E.W.S.Caetano,V.H.Freire,et al.2007.Structural,electronic,and optical absorption properties of orthorhombic CaSnO_3 through ab initio calculations[J].J.Phys.Condens.Matter.,19:106214-106222.
[4]A.M.Azad,L.L.W.Shyan,T.Y.Pang,et al.2000.Microstructural evolution in MSnO_3ceramics derived via self-heat-sustained(SHS) reaction technique[J].Ceram.Int.,26:685-692.
[5]A.Vegas,M.Vallet-Reg(?),J.M.Gonz(?)lez-Calber,et al.1986.The ASnO_3(A=Ca,Sr)perovskite[J].Acta Cryst.,B42:167-172.
[6]T.Endo,T.Masuda,H.Takizawa,et al.1992.Eu~(2+) Iuminescence in Sr_(n+1)Sn_nO_(3n+1) with layered perovskite structure[J].J.Mater.Sci.Lett.,11:1330-1332.
[7]W.F.Zhang,J.W.Tang,and J.H.Ye.2006.Photoluminescence and photocatalytic properties of SrSnO_3 perovskite[J].Chem.Phys.Lett.,418:174-178.
[8]B.Hadjarab,A.Bouguelia,and M.Trari.2007.Synthesis,physical and photo electrochemical characterization of La-doped SrSnO_3[J].J.Phys.Chem.Solids,68:1491-1499.
[9]M.K.Mahapatra,P.Singh,D.Kumar,et al.Synthesis,crystal structure,microstructure and electrical behaviour of systems Sr_(1-x)La_xSnO_3 and SrSn_(1-x)Ni_xO_3(x≤0.10)[J].Adv.Appl.Ceram.,105:280-284.
[10]K.S.Rob,K.H.Ryu,and C.H.Yo.1999.Nonstoichiometry and physical properties of the SrSn_(1-x)Fe_xO_(3-y) system[J].J.Solid State Chem.,142:288-293.
[11]O.Parkash,K.D.Mandal,C.C.Christopher,et al.1996.Dielectric properties of the Sr_(1-x)La_xSn_(1-x)Co_xO_3 system[J].J.Mater.Sci.,31:4705-4708.
[12]H.-M.Christen,L.A.Boatner,J.d.Budai,et al.1997.Semiconducting epitaxial films of metastable SrRu_(0.5)Sn_(0.5)O_3 grown by pulsed laser deposition[J].Appl.Phys.Lett.,70:2147-2149.
[13]N.F.Mott,E.A.Davis.1971.Electronic processes in non-crystalline materials[M].London:Oxford University Press.
[14]K.Nomura,H.Ohta,K.Ueda,et al.2003.Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor[J].Science,300:1269-1272.
[15]M.Snure and A.Tiwari.2007.Structural,electrical,and optical characterizations of epitaxial Zn_(1-x)Ga_xO films grown on sapphire(0001) substrate[J].J.Appl.Phys.,101:124912-124917.
[1]钟维烈.1996.铁电体物理学[M].北京:科学出版社,22-44.
[2]O.Auciello,J.F.Scott,and R.Ramesh.1998.The physics of ferroelectric memories[J].Phys.Today,51:22-27.
[3]J.F.Scott,C.A.D.Araujo.1989.Ferroelectric memories[J].Science,246:1400-1405.
[4]T.Zhao,S.B.Ogale.S.R.Shinde,et al.2004.Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si[J].Appl.Phys.Lett.,84:750-752.
[5]Gordon Thomas.1997.Materials science:Invisible circuits[J].Nature,389:907-908.
[6]H.Hosono.2007.Recent progress in transparent oxide semiconductors:Materials and device application[J].Thin Solid Films,515:6000-6014.
[7]A.L.Dawar,and J.C.Joshi.1984.Semiconducting transparent thin films:their properties and applications[J].J.Mater.Sci.,19:1-23.
[8]H.Kawazoe,H.Yasukawa,K.Ueda,et al.2000.Transparent p-type conducting oxides:Design and fabrication of p-n heterojunctions[J].MRS Bulletin.,25:28-36.
[9]A.V.Rao,S.A.Mansour,and A.L.Bement.1996.Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide(ITO) electrodes[J].Mater.Lett.,29:255-258.
[10]M.W.J.Prins,K.-O.Grosse-Holz,G.M(u|¨)ller,et al.1996.A ferroelectric transparent thin-film transistor[J].Appl.Phys.Lett.,68:3650-3652.
[11]C.H.Seager,D.Mcintyre,B.A.Tuttle,et al.1995.Mechanisms for the operation of thin film transistors on ferroelectrics[J].Integr.Ferroelectr.,6:47-68.
[12]M.W.J.Prins,S.E.Zinnemers,J.F.M.Cillessen,et al.1996.Depletion-type thin-film transistors with a ferroelectric insulator[J].Appl.Phys.Lett.,70:27-29.
[13]K.Nomura,H.Ohta,K.Ueda,et al.2003.Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor[J].Science,300:1269-1272.
[14]I.E.Titkov,I.P.Pronin,I.A.Liniichuk,et al.2005.Transparent ferroelectric field effect transistor with a single-crystal SnO_2 channel[J].Integr.Ferroelectr.,72:53-60.
[15]M.-W.Chu,I.Szafranisk,R.Scholz,et al.2004.Impact of misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites[J].Nature Mater.,3:87-90.
[16]J.W.Johnson,B.Luo,F.Ren,et al.2000.Gd_2O_3/GaN metal-oxide-semiconductor field-effect transistor[J].Appl.Phys.Lett.,77:3230-3232.
[17]S.P.Alpay,I.B.Misirlioglu,and V.Nagarajan.2004.Can interface dislocations degrade ferroelectric properties?[J].Appl.Phys.Lett.,85:2044-2046.
[18]Y.Watanabe.1999.Electrical transport through Pb(Zr,Ti)O_3 p-n and p-p heterostructures modulated by bound charges at a ferroelectric surface:Ferroelectric p-n diode[J].Phys.Rev.B,59:11257-11266.
[19]H.Yang,H.M.Luo,H.Wang,et al.2008.Rectifying current-voltage characteristics of BiFeO_3/Nb-doped SrTiO_3[J].Appl.Phys.Lett,92:102113-102115.
[20]S.M.Guo,Y.G.Zhao,C.M.Xiong,et al.2006.Rectifying Ⅰ-Ⅴ characteristic of LiNbO_3/Nb-doped SrTiO_3 heterojunction[J].Appl.Phys.Lett.,89:223506-223508.
[21]X.D.Qi,M.Wei,Y.Lin,et al.2005.High-resolution x-ray diffraction and transmission electron microscopy of multiferroic BiFeO_3 films[J].Appl.Phys.Lett.,86:071913-071915.
[22]M.Bibes,M.-J.Casanove,L.Balcells,et al.2002.Magnetotransport properties of fully strained epitaxial thin films of La_(2/3)Ca_(1/3)MnO_3 grown on SrTiO_3[J].Appl.Sur.Sci.,1-2:202-208.
[23]X.J.Lou.2009.Polarization fatigue in ferroelectric thin films and related materials [J].J.Appl.Phys.,105:024101-024124.
[24]A.K.Tagantsev,I.Stolichnov,E.L.Colla,et al.2001.Polarization fatigue in ferroelectric films:Basic experimental findings,phenomenological scenarios,and microscopic features[J].J.Appl.Phys.,90:1387-1402.
[25]X.F.Du,and I.W.Chen.1998.Fatigue of Pb(Zr_(0.53)Ti_(0.47))O_3 ferroelectric thin films[J].J.Appl.Phys,83:7789-7798.
[26]Y.Xiao,B.Vivek,and K.Bhattacharya.2005.Depletion layers and domain walls in semiconducting ferroelectric thin films[J].Phys.Rev.Lett,95:247603-247606.
[27]Z.Zhang,Y.H.Sun,Y.G.Zhao,et al.2008.Manganite thin film/ZnO nanowire (nanosheets)p-n junctions[J].Appl.Phys.Lett,92:103113-103115.
[28]Feng Chen,Q.Z.Liu,H.F.Wang,et al.2007.Polarization switching and fatigue in Pb(Zr_(0.52)Ti_(0.48))O_3 films sandwiched by oxide electrodes with different carrier types[J].Appl.Phys.Lett,90:192907-192909.
[29]J.Wang,J.B.Neaton,R.Ramesh,et al.2003.Epitaxial BiFeO_3 multiferroic thin film heterostructures[J].Science,299:1719-1722.
[30]S.K.Singh,H.Ishiwara,K.Maruyama.2006.Room temperature ferroelectric properties of Mn-substituted BiFeO_3 thin films deposited on Pt electrodes using chemical solution deposition[J].Appl.Phys.Lett,88:262908-262910.
[31]S.R.Basu,L.W.Martin,Y.H.Chu,et al.2008.Photoconductivity in BiFeO_3 thin films[J].Appl.Phys.Lett,92:091905-091907.
[32]R.F.Pierret.1996.Semiconductor device fundamentals[M].New York:Addison-Wesley.
[33]J.Yuan,H.Wu,L.X.Cao,et al.2007.Metallic oxide p-i-n junctions with ferroelectric as the barrier[J].Appl.Phys.Lett.,Appl.Phys.Lett.,90:102113-102115.
[34]F.X.Hu,J.Gao,J.R.Sun,et al.2003.Good rectifying characteristic in p-n junctions composed of La_(0.66)Ca_(0.33)MnO_(3-δ)/Nb-0.7 wt%-doped SrTiO3[J].Appl.Phys.Lett.,83:1869-1871.
[35]刘洪图主编.2003.半导体材料物理[M].合肥:中国科学技术大学出版社.
[36]J.F.Scott.1999.Device physics of ferroelectric thin-film memories[J].Jpn.J.Appl.Phys.,38:2272-2274.
[37]S.K.Pandey,A.R.James,R.Raman,et al.2005.Structural,ferroelectric and optical properties of PZT thin films[J].Physica B:Condens.Matter.,369:135-142.
[38]H.Yang,H.M.Luo,H.Wang,et al.2008.Rectifying current-voltage characteristics of BiFeO_3/Nb-doped SrTiO_3 heterojunction[J].Appl.Phys.Lett.,92:102113-102115.
[39]D.A.Neamen.2003.Semiconductor physics and devices:Basic principles[M].3~(rd).New York:Mcgraw-Hill.350-359.
[40]M.M.Kumar,V.R.Palkar.2000.Ferroelectricity in a pure BiFeO_3 ceramic[J].Appl.Phys.Lett.,76:2764-2766.
[41]T.Choi,S.Lee,Y.J.Choi,et al.2009.Switchable ferroelectric diode and photovoltaic effect in BiFeO_3[J].Science,324:63-66.
[42]S.J.Clark,and J.Robertson.2007.Band gap and schottky barrier heights of multiferroic BiFeO_3[J].Appl.Phys.Lett.,90:132903-132905.
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