纳米晶金刚石薄膜场致发射特性研究
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摘要
近年来 ，国内外不断有实验和理论研究表明，金刚石薄膜特别是纳米晶金刚石薄膜，在低的开启电压作用下，即可获得很高的场致发射电流密度，具有十分优秀的场致电子发射特性，是一种理想的场致发射阴极材料。采用金刚石薄膜制备成的场致发射冷阴极在微波电真空器件和平面显示器等方面有着广阔的应用前景。
微波等离子体增强化学气相沉积法（MPCVD法）是众多低气压下激活CVD工艺方法的一种，也是目前在国内外比较流行的制备金刚石薄膜的工艺方法之一。其特点是低温、低压、清洁。
本论文中，作者分析了MPCVD方法中气源成分比、微波功率、等离子体球的位置、成核技术等各种工艺条件对金刚石薄膜质量的影响，并总结得到了一些有意义的结论；同时，在自行研制的MPCVD沉积系统上，于4-7Kpa、1000℃左右的热力学条件下，采用CH4/H2气源气氛在光滑的硅衬底上制备出了晶粒尺寸在300纳米以下的纳米晶金刚石薄膜，测试得到了较好的薄膜场致电子发射性能，为金刚石薄膜场致发射冷阴极的研究工作打下了实验基础。
Recently, a number of experiments and theoretical researches have showed that diamond thin films，especially nanocrystalline diamond thin films, could emit electrons at very low fields, and be well suited for field emission cold cathode which is applied in many field emission applications, such as microwave vacuum devices and field emission displays.
Microwave plasma chemical vapor deposition (MPCVD) ,a kind of chemical vapor deposition method with low temperature，low intensity of pressure and clearance ，is commonly used for the growth of diamond thin films.
In this paper，first ,the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during MPCVD process，including gas proportion，the power of microwave，the plasma's location ,the nucleation technique ,etc.. Finally，the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using CH4/H2 gases in the MPCVD system，and the nanocrystalline diamond thin films was proved to have good field emission performance. All these researches will make the foundation for the field emission cathode of diamond films.
微波等离子体增强化学气相沉积法（MPCVD法）是众多低气压下激活CVD工艺方法的一种，也是目前在国内外比较流行的制备金刚石薄膜的工艺方法之一。其特点是低温、低压、清洁。
本论文中，作者分析了MPCVD方法中气源成分比、微波功率、等离子体球的位置、成核技术等各种工艺条件对金刚石薄膜质量的影响，并总结得到了一些有意义的结论；同时，在自行研制的MPCVD沉积系统上，于4-7Kpa、1000℃左右的热力学条件下，采用CH4/H2气源气氛在光滑的硅衬底上制备出了晶粒尺寸在300纳米以下的纳米晶金刚石薄膜，测试得到了较好的薄膜场致电子发射性能，为金刚石薄膜场致发射冷阴极的研究工作打下了实验基础。
Recently, a number of experiments and theoretical researches have showed that diamond thin films，especially nanocrystalline diamond thin films, could emit electrons at very low fields, and be well suited for field emission cold cathode which is applied in many field emission applications, such as microwave vacuum devices and field emission displays.
Microwave plasma chemical vapor deposition (MPCVD) ,a kind of chemical vapor deposition method with low temperature，low intensity of pressure and clearance ，is commonly used for the growth of diamond thin films.
In this paper，first ,the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during MPCVD process，including gas proportion，the power of microwave，the plasma's location ,the nucleation technique ,etc.. Finally，the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using CH4/H2 gases in the MPCVD system，and the nanocrystalline diamond thin films was proved to have good field emission performance. All these researches will make the foundation for the field emission cathode of diamond films.
引文
[1] 廖复疆，真空电子技术，北京：国防工业出版社，1999
[2] 沈一，皮德富，真空微电子学的研究方向与主要内容，真空电子技术，No.5，1996，22-24
[3] 林志贤，郭太良，场致发射材料的特性，福州大学学报（自然科学版），Vol.28，No.4，Aug，2000，22-24
[4] 承欢，江剑平，阴极电子学，西安：西北电讯工程学院，1986
[5] Jessing J. R.，Fabrication and characterization of gated porous silicon cathode field emission arrays，J.Vac.Sci.Technol B，16(2)，1998，777-779
[6] Hong D.， Aslam D.M.，Poly-diamond gated field-emitter display cells， IEEE transaction on ED，46(4)，1999，787-791
[7] N.S.Xu,，J.C.She， S.E.Huq， J.Chen， S.Z.Deng， Enhancing electron emission from silicon tip arrays by using thin amorphous diamond coating，Appl.Phys.Lett.，vol.73，1998，3668-3670
[8] 廖梅勇等，金刚石的场致发射，半导体技术，Vol.24，No.1，1999，55-57
[9] 曾葆青，谢扩军等，无氧铜基金刚石薄膜场致发射特性研究，真空科学与技术，Vol.21，No.1，2000，64-66
[10] Wang weibiao，Jin changchun，Ji hong，Yuan guang，Zhao haifeng，Fan xiwu，Liang jinqiu，Yao jinsong，Field emission performance of diamond film with grid，Vacuum microelectronics conference ，1998，182-183
[11] V.Malcher，A.Kromka，J.Janik，V.Dubravcova，Growth of polycrystalline diamond-films for low field electron emission，The third international euroconference on advanced semiconductor devices and Microsystems，October，2000，209-213
[12] Sacharia albin，Linwood watkins，Current-voltage characteristics of thin film and bulk diamond treated in hydrogen plasma，IEEE electron device letters.，Vol.11，No.4，1990，159-161
[13] T.Soga，T.Sharda，T.Jimbo，M.Umeno，Deposition and characterization of nanocrystalline diamond films on mirror-polished si substrate by biased enhanced microwave plasma chemical vapor deposition，International journal of modern physics b，Vol.16，NO.6，2002，845-852
[14] 张志勇，王雪文等，热丝CVD技术制备场发射冷阴极金刚石薄膜，光子学报，Vol.31，No.4，2002，450-453
[15] 陈灵，刘正义等，射频辉光放电等离子体化学气相沉积金刚石薄膜的性能研究，真空科学与技术学报，Vol.22，No.5，2002，379-381
[16] D.Zhou，A.R.Krauss，L.C.Qin，T.G.McCauley，D.M.Gruen，Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasma，J.Appl.Phys.，82(9)，1997，4546-4549
[17] Timothy d.corrigan，Field emission properties and characterization of ultrananocrystalline diamond thin films，The doctoral dissertation of the northwestern university，U.S.A.，2000
[18] Kang min-sik，Lee wook-seong，Baik young-joon，Morphology variation of diamond with increasing pressure up to 400 torr during deposition using hot filament cvd，Thin solid film，vol.398-399，2001，175-179
[19] K.Chakrabarti，R.Chakrabarit，K.K.Chattopadhyay，S.Chaudhuri，A.K.Pal，Nano-diamond films produced from CVD of camphor，Diamond and related materials，Vol.7，1998，845-852
[20] 王季陶，张卫，刘志杰，金刚石低压气相生长的热力学耦合模型，科学出版社，2000
[21] 刘志杰，张卫，万永中，王季陶，甲烷-氢气体系金刚石生长的热力学相图分析，微细加工技术，No.1，1998，69-71
[22] 刘志杰，张卫，万永中，王季陶，含氮体系CVD低压金刚石薄膜淀积条件，无机材料学报，Vol.14，No.1，Feb.，1999，114-116
[23] 刘志杰，张卫，万永中，王季陶，激活温度对C-H体系低压金刚石生长条件的影响，无机材料学报，Vol.13，No.3，Jun.，1998，432-434
[24] 曾葆青，场致发射的阵列阴极（FEA）的理论与实验研究，电子科技大学博士毕业论文，1999
[25] 霍晓，任家烈，鹿安理，导致金刚石薄膜不均匀沉积的机理，金属学报，Vol.33，No.6，1997，650-653
[26] R.C.Devries，Synthesis of diamond under metastable conditions，Ann.Rev.Mater.Sci.，Vol.17，1987，161-162
[27] E.G.Rakov，Calculation of diamond chemical vapor deposition region in C-H-O phase diagram，Applied physics letters，Vol.69，1996，2370-2372
[28] 王沫然，MATLAB6.0与科学计算，北京：电子工业出版社，2001
[2] 沈一，皮德富，真空微电子学的研究方向与主要内容，真空电子技术，No.5，1996，22-24
[3] 林志贤，郭太良，场致发射材料的特性，福州大学学报（自然科学版），Vol.28，No.4，Aug，2000，22-24
[4] 承欢，江剑平，阴极电子学，西安：西北电讯工程学院，1986
[5] Jessing J. R.，Fabrication and characterization of gated porous silicon cathode field emission arrays，J.Vac.Sci.Technol B，16(2)，1998，777-779
[6] Hong D.， Aslam D.M.，Poly-diamond gated field-emitter display cells， IEEE transaction on ED，46(4)，1999，787-791
[7] N.S.Xu,，J.C.She， S.E.Huq， J.Chen， S.Z.Deng， Enhancing electron emission from silicon tip arrays by using thin amorphous diamond coating，Appl.Phys.Lett.，vol.73，1998，3668-3670
[8] 廖梅勇等，金刚石的场致发射，半导体技术，Vol.24，No.1，1999，55-57
[9] 曾葆青，谢扩军等，无氧铜基金刚石薄膜场致发射特性研究，真空科学与技术，Vol.21，No.1，2000，64-66
[10] Wang weibiao，Jin changchun，Ji hong，Yuan guang，Zhao haifeng，Fan xiwu，Liang jinqiu，Yao jinsong，Field emission performance of diamond film with grid，Vacuum microelectronics conference ，1998，182-183
[11] V.Malcher，A.Kromka，J.Janik，V.Dubravcova，Growth of polycrystalline diamond-films for low field electron emission，The third international euroconference on advanced semiconductor devices and Microsystems，October，2000，209-213
[12] Sacharia albin，Linwood watkins，Current-voltage characteristics of thin film and bulk diamond treated in hydrogen plasma，IEEE electron device letters.，Vol.11，No.4，1990，159-161
[13] T.Soga，T.Sharda，T.Jimbo，M.Umeno，Deposition and characterization of nanocrystalline diamond films on mirror-polished si substrate by biased enhanced microwave plasma chemical vapor deposition，International journal of modern physics b，Vol.16，NO.6，2002，845-852
[14] 张志勇，王雪文等，热丝CVD技术制备场发射冷阴极金刚石薄膜，光子学报，Vol.31，No.4，2002，450-453
[15] 陈灵，刘正义等，射频辉光放电等离子体化学气相沉积金刚石薄膜的性能研究，真空科学与技术学报，Vol.22，No.5，2002，379-381
[16] D.Zhou，A.R.Krauss，L.C.Qin，T.G.McCauley，D.M.Gruen，Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasma，J.Appl.Phys.，82(9)，1997，4546-4549
[17] Timothy d.corrigan，Field emission properties and characterization of ultrananocrystalline diamond thin films，The doctoral dissertation of the northwestern university，U.S.A.，2000
[18] Kang min-sik，Lee wook-seong，Baik young-joon，Morphology variation of diamond with increasing pressure up to 400 torr during deposition using hot filament cvd，Thin solid film，vol.398-399，2001，175-179
[19] K.Chakrabarti，R.Chakrabarit，K.K.Chattopadhyay，S.Chaudhuri，A.K.Pal，Nano-diamond films produced from CVD of camphor，Diamond and related materials，Vol.7，1998，845-852
[20] 王季陶，张卫，刘志杰，金刚石低压气相生长的热力学耦合模型，科学出版社，2000
[21] 刘志杰，张卫，万永中，王季陶，甲烷-氢气体系金刚石生长的热力学相图分析，微细加工技术，No.1，1998，69-71
[22] 刘志杰，张卫，万永中，王季陶，含氮体系CVD低压金刚石薄膜淀积条件，无机材料学报，Vol.14，No.1，Feb.，1999，114-116
[23] 刘志杰，张卫，万永中，王季陶，激活温度对C-H体系低压金刚石生长条件的影响，无机材料学报，Vol.13，No.3，Jun.，1998，432-434
[24] 曾葆青，场致发射的阵列阴极（FEA）的理论与实验研究，电子科技大学博士毕业论文，1999
[25] 霍晓，任家烈，鹿安理，导致金刚石薄膜不均匀沉积的机理，金属学报，Vol.33，No.6，1997，650-653
[26] R.C.Devries，Synthesis of diamond under metastable conditions，Ann.Rev.Mater.Sci.，Vol.17，1987，161-162
[27] E.G.Rakov，Calculation of diamond chemical vapor deposition region in C-H-O phase diagram，Applied physics letters，Vol.69，1996，2370-2372
[28] 王沫然，MATLAB6.0与科学计算，北京：电子工业出版社，2001