大功率白光LED器件及照明灯具的热设计与光设计
摘要
大功率白光LED因其具有低电压、低能耗、长寿命、高可靠性等优点,而有望成为第四代照明光源,但是热设计和光设计上的不成熟性制约了其在照明领域的推广。
利用有限元分析的方法从LED器件和芯片的角度研究了散热结构中各因素对散热性能的影响,其中包括热沉尺寸、热扩散层以及侧面热扩散等。利用正交设计的方法分析了常用肋片型和针肋型散热热沉各参数对散热系统的影响规律,并得出了这两种结构的最优化参数。
本文提出了一种带凹槽铜基板强化热扩散的结构,从有限元和试验两个角度验证了其可行性,并将其应用到LED投射灯的组装当中,最后的测试结果验证了这种结构的实际散热效果。
使用Tracepro光学仿真软件以及正交设计的方法详细分析了旋转抛物面反射体的各因素,并得出了焦距对法向光强和半强度角的影响趋势。得出了通过两个LED照度分布估算间距的方法,并将其应用于估算M×N LED阵列的间距,解决了难于直接用照度分布函数求解间距的问题,但结果的准确性受到LED阵列大小的影响。
High-power white LED due to its advantages, such as low voltage, low energy consumption, long service life, high reliability, and so on, could possibly be the 4th generation illuminating light, but the immaturity of thermal and optical designs has restricted its generalization in illuminating field.
The influence of parameters of the heat dissipating structure, including heat sink dimension, heat spreading layer and lateral heat dissipation, has been investigated by using finite element analysis in the sense of LED device and chip. Moreover, orthogonal test has been applied into the analysis of rule of parameters of the laminar and pin rib, and optimum results have been arrived.
A heat spreading structure of copper heat spreader with indent has been proposed, the feasibility of which has been verified by using finite element analysis and experiment. Test results of LED projector lamp using this structure have confirmed the heat dissipating efficiency of the structure.
By using the optical simulation software Tracepro and orthogonal test, parameters of parabolic reflector have been analyzed in detail, and the rule of focal length’s influence on normal luminous intensity and half-intensity angle has been obtained. The method of approximating the clearance by analyzing the illuminance function of double LEDs has been applied into M×N LED array, avoiding the difficulty in resolving clearance of array directly, but the accuracy of result could be affected by the size of LED array.
利用有限元分析的方法从LED器件和芯片的角度研究了散热结构中各因素对散热性能的影响,其中包括热沉尺寸、热扩散层以及侧面热扩散等。利用正交设计的方法分析了常用肋片型和针肋型散热热沉各参数对散热系统的影响规律,并得出了这两种结构的最优化参数。
本文提出了一种带凹槽铜基板强化热扩散的结构,从有限元和试验两个角度验证了其可行性,并将其应用到LED投射灯的组装当中,最后的测试结果验证了这种结构的实际散热效果。
使用Tracepro光学仿真软件以及正交设计的方法详细分析了旋转抛物面反射体的各因素,并得出了焦距对法向光强和半强度角的影响趋势。得出了通过两个LED照度分布估算间距的方法,并将其应用于估算M×N LED阵列的间距,解决了难于直接用照度分布函数求解间距的问题,但结果的准确性受到LED阵列大小的影响。
High-power white LED due to its advantages, such as low voltage, low energy consumption, long service life, high reliability, and so on, could possibly be the 4th generation illuminating light, but the immaturity of thermal and optical designs has restricted its generalization in illuminating field.
The influence of parameters of the heat dissipating structure, including heat sink dimension, heat spreading layer and lateral heat dissipation, has been investigated by using finite element analysis in the sense of LED device and chip. Moreover, orthogonal test has been applied into the analysis of rule of parameters of the laminar and pin rib, and optimum results have been arrived.
A heat spreading structure of copper heat spreader with indent has been proposed, the feasibility of which has been verified by using finite element analysis and experiment. Test results of LED projector lamp using this structure have confirmed the heat dissipating efficiency of the structure.
By using the optical simulation software Tracepro and orthogonal test, parameters of parabolic reflector have been analyzed in detail, and the rule of focal length’s influence on normal luminous intensity and half-intensity angle has been obtained. The method of approximating the clearance by analyzing the illuminance function of double LEDs has been applied into M×N LED array, avoiding the difficulty in resolving clearance of array directly, but the accuracy of result could be affected by the size of LED array.
引文
1.王垚浩,余彬海,李舜勉.功率LED芯片键合材料对器件热特性影响的分析与仿真.佛山科学技术学院学报(自然科学版). 2005, 23(4):14~17
2.陈明祥,罗小兵,马泽涛等.大功率白光LED封装设计与研究进展.半导体光电,2006,27(6):653~658
3. Liqnqiao Yang, Sunho Jang, Woongjoon Hwang. Thermal analysis of high power GaN-based LEDs with ceramic package. ScienceDirect, 2007, 455:95~99
4. Lan Kim, Moo Whan Shin. Thermal analysis and design of high power LED packages and systems. Proc. Of SPIE,63370U-1~9
5. Moo Whan Shin. Thermal design of high-power LED package and system. Proc. of SPIE, 635509-1~13
6.钱可元,郑代顺,罗毅. GaN基功率型LED芯片散热性能测试与分析. Semiconductor Optoelectronics. 2006, 27(3):236~239
7.吕家东.一种新的LED制冷方案-微通道制冷器.光源与照明, 2007, 1:28~30
8. Jen-Hau Cheng, Chun-Kai Liu, Yu-Lin Chao, et al. Cooling performance of silicon-based thermoelectric device on high power led. international conference on thermoelectrics, 2005:53~56
9. Xiaobing Luo, Sheng Liu. A Microjet Array Cooling system for thermal mangement of high-brightness LEDs. IEEE Transcations On Advanced Packaging, 2007, 30:475~484
10. Ray-Hua Horng, Shao-Hua Huang, Chiao-Chih Yang, et al. Efficiency improvement of GaN-Based LEDs with ITO texturing window layers using natural lithography. IEEE Journal of Selected Topics in Quantum Electrics, 2006, 12:1196~1201
11. C. M. Tsai, J. K. Sheu, W. C. Lai, et al. Ehanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD. IEEE Electron Device Letters, 2005, 26:464~466
12. Shun-Cheng Hsu, Dong-Sing Wuu, Chong-Yi Lee, et al. High-efficiency1-mm2 AlGaInP LEDs sandwiched by ITO omni-directional reflector and current-spreading layer. IEEE Photonics Technology Letters, 2007, 19:492~494
13. S. J. Chang, C. S. Chang, Y. K. Su, et al. Nitride-based LEDs with an sps tunneling contact layer and an ITO transparent contact. IEEE Photonics Technology Letters, 2004, 16:1002~1004
14. M. Fujita, T. Ueno, T. Asano, et al. Organic light-emitting diode with ITO/organic photonic crystal. Electronics Letters, 2003, 39(24)
15. C. S. Chang, S. J. Chang, Y. K. Su, et al. High brightness InGaN green LEDs with an ITO on n++-SPS upper contact. IEEE Transactions On Electron Devices, 2003, 50:2208~2212
16. Shun-Cheng Hsu, Chong-Yi Lee, Jung-Min, et al. Ehanced light output in roughened GaN-Based light-emitting diodes using electrodeless photoelectrochemical etching. IEEE Photonics Technology Letters, 2006, 18:2472~2474
17. Chih-Chiang Kao, H. C. Kuo, K. F. Yeh, et al. Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching. IEEE Photonics Technology Letters, 2007, 19:849~851
18. Ching-Cherng Sun, Chao-Ying Lin. Optical modeling and light extraction of an LED with surface roughening and sharpening. 3rd International Conference on Solid State Lighting, 2004, 5187:100~106
19. Chia-Feng Lin, Zhong-Jie Yang, Jing-Hui Zheng, et al. Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall. IEEE Photonics Technology Letters, 2005, 17:2038~2040
20. H. W. Huang, H. C. Kuo, C. F. Lai, et al. High-performance GaN-Based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness. IEEE Photonics Technology Letters, 2007, 19:565~567
21. Hung-Wen Huang, C. C. Kao, J. T. Chu, et al. Improvement of InGaN light-emitting diode performance with a nano-roughened p-GaN surface. IEEE Photonics Technology Letters, 2005, 17:983~985
22. Y. J. Lee, H. C. Kuo, S. C. Wang, et al. Increasing the extractionefficiency of AlGaInP LEDs via n-side surface roughening. IEEE Photonics Technology Letters, 2005, 17:2289~2291
23. Y.J. Lee, J.M. Hwang, T.C. Hsu, et al. GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror. IEEE Photonics Technology Letters, 2006, 18:724~726
24. C. F. Shen, S. J. Chang, W. S. Chen, et al. Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate. IEEE Photonics Technology Letters, 2007, 19:780~782
25. D. S. Wuu, W. K. Wang, W. C. Shih, et al. Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates. IEEE Photonics Technology Letters, 2005, 17:288~290
26. Shao-Hua Huang, Ray-Hua Horng, Kuo-Sheng Wen, et al. Improved light extraction of nitride-based flip-chip light-emitting diodes via sapphire shaping and texturing. IEEE Photonics Technology Letters, 2006, 18:2623~2625
27. Woei-Kai Wang, Dong-Sing Wuu, Shu-Hei Lin, et al. Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrate. IEEE Journal of Quantum Electronics, 2005, 41:1403~1408
28. Y. J. Lee, J. M. Hwang, T. C. Hsu, et al. Enhancing the output power of GaN-Based LEDs grown on wet-etched patterned sapphire substrates. IEEE Photonics Technology Letters, 2006, 18:1152~1154
29. Ja-Yeon Kim, Min-Ki Kwon, Jae-Pil Kim, et al. Ehanced light extraction from triangular GaN-Based light-emitting diodes. IEEE Photonics Technology Letters, 2007:1865~1867
30. Steven C.Allen, Andrew J. Steckl. ELiXIR-solid-state luminaire with enhanced light extraction by internal reflection. Journal of Display Technology, 2007, 3:155~159
31. R. Mueller-Mach, G. O. Mueller, M. R. Krames, et al. High-power phosphor-converted light-emitting diodes based on III-nitrides. IEEE J. Sel. Topics Quantum Electron, 2002, 8:339~345
32. N. Narendran, Y. Gu, J. P. Freyssinier-Nova, et al. Extracting phosphor-scattered photons to improve white LED efficiency. Phys. Stat. Sol., 2005, 202:60~62
33. R. Mueller-Mach, G. O. Mueller, T. Trottier, et al. Green phosphor-converted LED. Proc. SPIE, 2002, 4776:131~136
34. O. N. Ermakov, M. G. Kaplunov, O. N. Efinmov, et al. Hybrid organic-inorganic light-emitting diodes. Microelectron. Eng., 2003, 69:208~212
35. A. J. Steckl, J. Heikenfeld, S. C. Allen. Light wave coupled flat panel displays and solid-state lighting using hybrid inorganic/organic materials. J. Display Technol., 2005, 1:157~166
36. H. F. Xiang, S. C. Yu, C. M. Che, et al. Efficient white and red light emission from GaN/tris-(8-hydroxyquinolato) aluminum/platinum(II) meso-tetrakis(pentafluorophenyl) porphyrin hybrid light-emitting Diodes. Appl. Phys. Lett., 2003, 83:1518~1520
37.杨毅,钱可元,罗毅.一种新型的基于非成像光学的LED均匀照明系统.光学技术, 2007, 33(1):110~115
38.屠其非,陈捷,周伟等. LED信号灯二次光学设计.照明工程学报, 2002, 13(1):11~14
39.陈波,李伟平,黄杨程等.一款LED后位灯的光学设计与仿真.光学仪器, 2006, 28(5):37~41
40.陈元灯. LED制造技术与应用.电子工业出版社, 2007:124~129
41.李云雁,胡传荣.试验设计与数据处理.化学工业出版社, 2005:79~112
2.陈明祥,罗小兵,马泽涛等.大功率白光LED封装设计与研究进展.半导体光电,2006,27(6):653~658
3. Liqnqiao Yang, Sunho Jang, Woongjoon Hwang. Thermal analysis of high power GaN-based LEDs with ceramic package. ScienceDirect, 2007, 455:95~99
4. Lan Kim, Moo Whan Shin. Thermal analysis and design of high power LED packages and systems. Proc. Of SPIE,63370U-1~9
5. Moo Whan Shin. Thermal design of high-power LED package and system. Proc. of SPIE, 635509-1~13
6.钱可元,郑代顺,罗毅. GaN基功率型LED芯片散热性能测试与分析. Semiconductor Optoelectronics. 2006, 27(3):236~239
7.吕家东.一种新的LED制冷方案-微通道制冷器.光源与照明, 2007, 1:28~30
8. Jen-Hau Cheng, Chun-Kai Liu, Yu-Lin Chao, et al. Cooling performance of silicon-based thermoelectric device on high power led. international conference on thermoelectrics, 2005:53~56
9. Xiaobing Luo, Sheng Liu. A Microjet Array Cooling system for thermal mangement of high-brightness LEDs. IEEE Transcations On Advanced Packaging, 2007, 30:475~484
10. Ray-Hua Horng, Shao-Hua Huang, Chiao-Chih Yang, et al. Efficiency improvement of GaN-Based LEDs with ITO texturing window layers using natural lithography. IEEE Journal of Selected Topics in Quantum Electrics, 2006, 12:1196~1201
11. C. M. Tsai, J. K. Sheu, W. C. Lai, et al. Ehanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD. IEEE Electron Device Letters, 2005, 26:464~466
12. Shun-Cheng Hsu, Dong-Sing Wuu, Chong-Yi Lee, et al. High-efficiency1-mm2 AlGaInP LEDs sandwiched by ITO omni-directional reflector and current-spreading layer. IEEE Photonics Technology Letters, 2007, 19:492~494
13. S. J. Chang, C. S. Chang, Y. K. Su, et al. Nitride-based LEDs with an sps tunneling contact layer and an ITO transparent contact. IEEE Photonics Technology Letters, 2004, 16:1002~1004
14. M. Fujita, T. Ueno, T. Asano, et al. Organic light-emitting diode with ITO/organic photonic crystal. Electronics Letters, 2003, 39(24)
15. C. S. Chang, S. J. Chang, Y. K. Su, et al. High brightness InGaN green LEDs with an ITO on n++-SPS upper contact. IEEE Transactions On Electron Devices, 2003, 50:2208~2212
16. Shun-Cheng Hsu, Chong-Yi Lee, Jung-Min, et al. Ehanced light output in roughened GaN-Based light-emitting diodes using electrodeless photoelectrochemical etching. IEEE Photonics Technology Letters, 2006, 18:2472~2474
17. Chih-Chiang Kao, H. C. Kuo, K. F. Yeh, et al. Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching. IEEE Photonics Technology Letters, 2007, 19:849~851
18. Ching-Cherng Sun, Chao-Ying Lin. Optical modeling and light extraction of an LED with surface roughening and sharpening. 3rd International Conference on Solid State Lighting, 2004, 5187:100~106
19. Chia-Feng Lin, Zhong-Jie Yang, Jing-Hui Zheng, et al. Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall. IEEE Photonics Technology Letters, 2005, 17:2038~2040
20. H. W. Huang, H. C. Kuo, C. F. Lai, et al. High-performance GaN-Based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness. IEEE Photonics Technology Letters, 2007, 19:565~567
21. Hung-Wen Huang, C. C. Kao, J. T. Chu, et al. Improvement of InGaN light-emitting diode performance with a nano-roughened p-GaN surface. IEEE Photonics Technology Letters, 2005, 17:983~985
22. Y. J. Lee, H. C. Kuo, S. C. Wang, et al. Increasing the extractionefficiency of AlGaInP LEDs via n-side surface roughening. IEEE Photonics Technology Letters, 2005, 17:2289~2291
23. Y.J. Lee, J.M. Hwang, T.C. Hsu, et al. GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror. IEEE Photonics Technology Letters, 2006, 18:724~726
24. C. F. Shen, S. J. Chang, W. S. Chen, et al. Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate. IEEE Photonics Technology Letters, 2007, 19:780~782
25. D. S. Wuu, W. K. Wang, W. C. Shih, et al. Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates. IEEE Photonics Technology Letters, 2005, 17:288~290
26. Shao-Hua Huang, Ray-Hua Horng, Kuo-Sheng Wen, et al. Improved light extraction of nitride-based flip-chip light-emitting diodes via sapphire shaping and texturing. IEEE Photonics Technology Letters, 2006, 18:2623~2625
27. Woei-Kai Wang, Dong-Sing Wuu, Shu-Hei Lin, et al. Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrate. IEEE Journal of Quantum Electronics, 2005, 41:1403~1408
28. Y. J. Lee, J. M. Hwang, T. C. Hsu, et al. Enhancing the output power of GaN-Based LEDs grown on wet-etched patterned sapphire substrates. IEEE Photonics Technology Letters, 2006, 18:1152~1154
29. Ja-Yeon Kim, Min-Ki Kwon, Jae-Pil Kim, et al. Ehanced light extraction from triangular GaN-Based light-emitting diodes. IEEE Photonics Technology Letters, 2007:1865~1867
30. Steven C.Allen, Andrew J. Steckl. ELiXIR-solid-state luminaire with enhanced light extraction by internal reflection. Journal of Display Technology, 2007, 3:155~159
31. R. Mueller-Mach, G. O. Mueller, M. R. Krames, et al. High-power phosphor-converted light-emitting diodes based on III-nitrides. IEEE J. Sel. Topics Quantum Electron, 2002, 8:339~345
32. N. Narendran, Y. Gu, J. P. Freyssinier-Nova, et al. Extracting phosphor-scattered photons to improve white LED efficiency. Phys. Stat. Sol., 2005, 202:60~62
33. R. Mueller-Mach, G. O. Mueller, T. Trottier, et al. Green phosphor-converted LED. Proc. SPIE, 2002, 4776:131~136
34. O. N. Ermakov, M. G. Kaplunov, O. N. Efinmov, et al. Hybrid organic-inorganic light-emitting diodes. Microelectron. Eng., 2003, 69:208~212
35. A. J. Steckl, J. Heikenfeld, S. C. Allen. Light wave coupled flat panel displays and solid-state lighting using hybrid inorganic/organic materials. J. Display Technol., 2005, 1:157~166
36. H. F. Xiang, S. C. Yu, C. M. Che, et al. Efficient white and red light emission from GaN/tris-(8-hydroxyquinolato) aluminum/platinum(II) meso-tetrakis(pentafluorophenyl) porphyrin hybrid light-emitting Diodes. Appl. Phys. Lett., 2003, 83:1518~1520
37.杨毅,钱可元,罗毅.一种新型的基于非成像光学的LED均匀照明系统.光学技术, 2007, 33(1):110~115
38.屠其非,陈捷,周伟等. LED信号灯二次光学设计.照明工程学报, 2002, 13(1):11~14
39.陈波,李伟平,黄杨程等.一款LED后位灯的光学设计与仿真.光学仪器, 2006, 28(5):37~41
40.陈元灯. LED制造技术与应用.电子工业出版社, 2007:124~129
41.李云雁,胡传荣.试验设计与数据处理.化学工业出版社, 2005:79~112