基于自动温控光谱测试系统的深紫外LED光电特性研究
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摘要
为研究温度对AlGaN基274nm深紫外LED光电参数的影响.基于自动温控深紫外光谱分析测量系统的测试结果表明,在25～100℃范围内该深紫外LED的工作电压和基板温度呈负线性关系,温度系数约为-8.79 mV/℃,较大的温度系数可能来源于深紫外LED中p-AlGaN较低的掺杂浓度.通过瞬态和稳态工作电压测试及结合温度系数,计算得到深紫外LED样品的热阻为20.8℃/W,该热阻对应芯片PN结到管壳引脚之间的导热通道.随温度升高,该深紫外LED峰值波长的稳定性和单色性较好.该深紫外LED辐射光谱由UVA、UVB和UVC三种成分组成;随着温度升高,UVA和UVC成分减少,UVB成分增加,UVB成分可能来源于器件中低Al组分外延层材料吸收量子阱发光后的二次辐射.研究表明,温度对深紫外LED的工作电压、热阻以及辐射光谱等性能有着重要影响,相关光电参数的准确测量需要精确控温.
The effect of temperature on the photoelectric parameters of AlGaN-based 274 nm deep ultraviolet LED(UV-LED) was investigated.The test results based on the automatic temperature-controlled deep ultraviolet spectroscopy measurement system show that the working voltage of the deep ultraviolet LED and the substrate temperature are negatively linear in the range of 25～100℃, and the temperature coefficient is about-8.79 mV/℃. Larger temperature coefficient may be derived from the lower doping concentration of p-AlGaN in deep UV-LED.Through the trasient and steady-state operating voltage test and combined with temperature coefficient, the thermal resistance of the deep UV-LED is calculated to be 20.8 ℃/W. The thermal resistance corresponds to the thermal conduction path between the chip's PN junction and the pin of package. As the temperature increases, the stability and monochromaticity of the peak wavelength of the deep ultraviolet LED are better. The radiation spectrum of deep UV-LED is composed of three components: UVA, UVB, and UVC. The UVA and UVC decrease with increasing temperature, while the UVB increases with increasing temperature. The component of UVB may be derived from the secondary radiation of epitaxial layer materials with low-Al composition, which absorbs the quantum well light emitting to light up.The results show that temperature has an significant influence on the operating voltage, thermal resistance, and radiation spectrum of deep UV-LED LED. Accurate measurement of relevant photoelectric parameters requires precise temperature control.
The effect of temperature on the photoelectric parameters of AlGaN-based 274 nm deep ultraviolet LED(UV-LED) was investigated.The test results based on the automatic temperature-controlled deep ultraviolet spectroscopy measurement system show that the working voltage of the deep ultraviolet LED and the substrate temperature are negatively linear in the range of 25～100℃, and the temperature coefficient is about-8.79 mV/℃. Larger temperature coefficient may be derived from the lower doping concentration of p-AlGaN in deep UV-LED.Through the trasient and steady-state operating voltage test and combined with temperature coefficient, the thermal resistance of the deep UV-LED is calculated to be 20.8 ℃/W. The thermal resistance corresponds to the thermal conduction path between the chip's PN junction and the pin of package. As the temperature increases, the stability and monochromaticity of the peak wavelength of the deep ultraviolet LED are better. The radiation spectrum of deep UV-LED is composed of three components: UVA, UVB, and UVC. The UVA and UVC decrease with increasing temperature, while the UVB increases with increasing temperature. The component of UVB may be derived from the secondary radiation of epitaxial layer materials with low-Al composition, which absorbs the quantum well light emitting to light up.The results show that temperature has an significant influence on the operating voltage, thermal resistance, and radiation spectrum of deep UV-LED LED. Accurate measurement of relevant photoelectric parameters requires precise temperature control.
引文
[1] KHAN A,BALAKRISHNAN K,KATONA T.Ultraviolet light-emitting diodes based on group three nitrides [J].Nature Photonics,2008,2(2):77-84.
[2] BAN K,YAMAMOTO J I,TAKEDA K,et al.Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells[J].Applied Physics Express,2011,4(5):2101.
[3] 王军喜,闫建昌,郭亚楠,等.氮化物深紫外LED研究新进展[J].中国科学:物理学力学天文学,2015,45:067303
[4] HIRAYAMA H,MAEDA N,FUJIKAWA S,et al.Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes[J].Japanese Journal of Applied Physics,2014,53(10):100209.
[5] QiAO Y,FENG S,XIONG C,et al.The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique[J].Solid State Electronics,2013,79(1):192-195.
[6] EIA/JEDEC Standard.JESD51—1 Integrated Circuits Thermal Measurement Method Electrical Test Method (Single Semiconductor Device)[S].USA:Electronic Industries Alliance,1995.
[7] 李炳乾,布良基,甘雄文,等.LED正向压降随温度的变化关系研究[J].光子学报,2003,32(11):1349-1351.
[8] 张海兵,吕毅军,李开航,等.功率型LED电压温度系数的研究[J].光电子激光,2008,19(12):1580-1583.
[9] DING X,YONG T,LI Z,et al.Thermal and optical investigations of high power LEDs with metal embedded printed circuit boards[J].International Communications in Heat & Mass Transfer,2015,66:32-39.
[10] 中华人民共和国信息产业部.SJ 20788—2000半导体发光二极管热阻抗测试方法[S].北京:中国标准出版社,2003.
[11] 曹玉春,陈亚飞,周慧慧,等.功率型LED结温电学法测量研究[J].常州大学学报:自然科学版,2016,28(2):88-92.
[12] 刘小凤.关于大功率LED散热技术分析[J].电子世界,2018,544(10):147-148.
[13] 王巧,刘宁炀,王君君,等.电流及温度应力对LED电致发光光谱特性的影响[J].材料研究与应用,2016,10(3):186-190.
[2] BAN K,YAMAMOTO J I,TAKEDA K,et al.Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells[J].Applied Physics Express,2011,4(5):2101.
[3] 王军喜,闫建昌,郭亚楠,等.氮化物深紫外LED研究新进展[J].中国科学:物理学力学天文学,2015,45:067303
[4] HIRAYAMA H,MAEDA N,FUJIKAWA S,et al.Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes[J].Japanese Journal of Applied Physics,2014,53(10):100209.
[5] QiAO Y,FENG S,XIONG C,et al.The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique[J].Solid State Electronics,2013,79(1):192-195.
[6] EIA/JEDEC Standard.JESD51—1 Integrated Circuits Thermal Measurement Method Electrical Test Method (Single Semiconductor Device)[S].USA:Electronic Industries Alliance,1995.
[7] 李炳乾,布良基,甘雄文,等.LED正向压降随温度的变化关系研究[J].光子学报,2003,32(11):1349-1351.
[8] 张海兵,吕毅军,李开航,等.功率型LED电压温度系数的研究[J].光电子激光,2008,19(12):1580-1583.
[9] DING X,YONG T,LI Z,et al.Thermal and optical investigations of high power LEDs with metal embedded printed circuit boards[J].International Communications in Heat & Mass Transfer,2015,66:32-39.
[10] 中华人民共和国信息产业部.SJ 20788—2000半导体发光二极管热阻抗测试方法[S].北京:中国标准出版社,2003.
[11] 曹玉春,陈亚飞,周慧慧,等.功率型LED结温电学法测量研究[J].常州大学学报:自然科学版,2016,28(2):88-92.
[12] 刘小凤.关于大功率LED散热技术分析[J].电子世界,2018,544(10):147-148.
[13] 王巧,刘宁炀,王君君,等.电流及温度应力对LED电致发光光谱特性的影响[J].材料研究与应用,2016,10(3):186-190.