Scaleup of Cu(InGa)Se2 Thin-Film Coevaporative Physical Vapor Deposition Process, 2. Evaporation Source Design

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• 作者：Kapil Mukati ; Babatunde A. Ogunnaike ; Erten Eser ; Shannon Fields ; Robert W. Birkmire
• 刊名：Industrial & Engineering Chemistry Research
• 出版年：2009
• 出版时间：July 1, 2009
• 年：2009
• 卷：48
• 期：13
• 页码：5992-5999
• 全文大小：398K
• 年卷期：v.48,no.13(July 1, 2009)
• ISSN：1520-5045

文摘

We recently presented the development and experimental validation of two models that are essential for effective commercial-scale source design for Cu(InGa)Seb>2b> thin film coevaporative physical vapor deposition processes: a three-dimensional thermal model of the evaporation source, and a Direct Simulation Monte Carlo (DSMC)-method-based effusion model. We showed that these models can be used to obtain reasonably accurate melt temperature dynamics and nozzle effusion flow properties. We now present how these simulation tools are used to develop a scale-up methodology for the effective commercialization of the pilot-scale physical vapor deposition (PVD) process at the University of Delaware’s Institute of Energy Conversion (IEC). We illustrate the methodology using two commercial-scale source design studies: a three-nozzle single source and a four-nozzle modular source. We also show that the proposed source designs are robust to modeling errors and the important process parameter of the source-to-substrate distance.