X-ray Absorption Spectroscopy of Functionalized Silicon Nanocrystals

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• 作者：Joel A. Kelly ; Eric J. Henderson ; Rhett J. Clark ; Colin M. Hessel ; Ronald G. Cavell ; Jonathan G. C. Veinot
• 刊名：Journal of Physical Chemistry C
• 出版年：2010
• 出版时间：December 30, 2010
• 年：2010
• 卷：114
• 期：51
• 页码：22519-22525
• 全文大小：210K
• 年卷期：v.114,no.51(December 30, 2010)
• ISSN：1932-7455

文摘

We present an X-ray absorption spectroscopic study of the optical and electronic properties of freestanding, alkyl-functionalized silicon nanocrystals (Si-NCs). These materials were derived from thermal processing of hydrogen silsesquioxane, subsequently etched with hydrofluoric acid and functionalized via photochemical hydrosilylation with alkenes. These materials are of interest for their size-dependent photoluminescence (PL), that spans the visible and near-IR regions. Using near-edge X-ray absorption fine structure spectroscopy and X-ray excited optical luminescence, we have investigated the impact of quantum confinement effects and surface species on the Si-NC PL. These materials exhibit PL found to be consistent with the quantum confinement model; however, ambient oxidation was proposed to strongly influence the results.