Study of Growth Parameters for Single InAs QD Formation on GaAs(001) Patterned Substrates by Local Oxidation Lithography

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• 作者：Jes煤s Herranz ; Luisa Gonz谩lez ; Lukasz Wewior ; Benito Al茅n ; David Fuster ; Yolanda Gonz谩lez
• 刊名：Crystal Growth & Design
• 出版年：2015
• 出版时间：February 4, 2015
• 年：2015
• 卷：15
• 期：2
• 页码：666-672
• 全文大小：412K
• ISSN：1528-7505

文摘

This work studies the selective nucleation of InAs within nanoholes on GaAs(001) substrates patterned by atomic force microscopy local oxidation. The effects of substrate temperature and As₄ overpressure during InAs deposition directly on the patterned substrate (without a GaAs buffer layer) are considered. It is found that when InAs is deposited at substrate temperature of 510 掳C under low As₄ overpressure, a single InAs quantum dot per nanohole is obtained for a broad range of sizes of pattern motifs. The use of these InAs quantum dots as seed nuclei for vertical stacking of optically active single InAs site-controlled quantum dots is investigated.