Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride

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• 作者：Christoph Neumann ; Leo Rizzi ; Sven Reichardt ; Bernat Terrés ; Timofiy Khodkov ; Kenji Watanabe ; Takashi Taniguchi ; Bernd Beschoten ; Christoph Stampfer
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：April 13, 2016
• 年：2016
• 卷：8
• 期：14
• 页码：9377-9383
• 全文大小：455K
• 年卷期：0
• ISSN：1944-8252

文摘

We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride heterostructures. The technique is based on photoinduced doping by a focused laser beam and does neither require masks nor photoresists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is limited by only the laser spot size (≈600 nm) and the accuracy of sample positioning. Our optical doping method offers a way to implement and to test different, complex doping patterns in one and the very same graphene device, which is not achievable with conventional gating techniques.