Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires

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• 作者：Guanxiong LiuSergey Rumyantsev ; Matthew A. Bloodgood ; Tina T. Salguero ; Michael Shur ; Alexander A. Balandin
• 刊名：Nano Letters
• 出版年：2017
• 出版时间：January 11, 2017
• 年：2017
• 卷：17
• 期：1
• 页码：377-383
• 全文大小：405K
• ISSN：1530-6992

文摘

We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe₃ capped with quasi-2D h-BN layers. Semimetallic TaSe₃ is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe₃ nanowires have lower levels of the normalized noise spectral density, S_I/I², compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f² type as temperature increases to ∼400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta–Horn random fluctuation model of the electronic noise in metals, we determined that the noise activation energy for quasi-1D TaSe₃ nanowires is approximately E_P ≈ 1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration is E_A = 0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semimetals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.