Low-Temperature Atomic Layer Deposition of CuSbS2 for Thin-Film Photovoltaics

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• 作者：Shannon C. RihaAlexandra A. Koegel ; Jonathan D. Emery ; Michael J. PellinAlex B. F. Martinson
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2017
• 出版时间：February 8, 2017
• 年：2017
• 卷：9
• 期：5
• 页码：4667-4673
• 全文大小：391K
• ISSN：1944-8252

文摘

Copper antimony sulfide (CuSbS₂) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (∼1.5 eV), large absorption coefficient (>10⁴ cm^–1), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS₂ thin films via atomic layer deposition has been developed. After a short (15 min) postprocess anneal at 225 °C, the ALD-grown CuSbS₂ films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10⁴ cm^–1, as well as a hole concentration of 10¹⁵ cm^–3. Finally, the ALD-grown CuSbS₂ films were paired with ALD-grown TiO₂ to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS₂ PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS₂/CdS heterojunction PV devices. While far from optimized, this work demonstrates the potential for ALD-grown CuSbS₂ thin films in environmentally benign photovoltaics.