Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green

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• 作者：Guo-En Weng (1)
  Wan-Ru Zhao (2)
  Shao-Qiang Chen (3) (4)
  Hidefumi Akiyama (3)
  Zeng-Cheng Li (5)
  Jian-Ping Liu (5)
  Bao-Ping Zhang (2)
  
  1. Department of Physics and Semiconductor Photonics Research Center ; Xiamen University ; 422 South Siming Road ; Xiamen ; 361005 ; P. R. China
  2. Department of Electronic Engineering ; Optoelectronics Engineering Research Center ; Xiamen University ; 422 South Siming Road ; Xiamen ; 361005 ; P. R. China
  3. Institute for Solid State Physics ; The University of Tokyo ; 5-1-5 Kashiwanoha ; Kashiwa ; Chiba ; 277-8581 ; Japan
  4. Department of Electronic Engineering ; East China Normal University ; 500 Dongchuan Road ; Shanghai ; 200241 ; P. R. China
  5. Suzhou Institute of Nano-Tech and Nano-Bionics ; Chinese Academy of Sciences ; 398 Ruoshui Road ; Suzhou ; 215123 ; P. R. China
  
• 关键词：InGaN ; Quantum dots ; Localization effect ; Carrier relaxation dynamics
• 刊名：Nanoscale Research Letters
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：10
• 期：1
• 全文大小：1,334 KB
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• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X

文摘

Strong localization effect in self-assembled InGaN quantum dots (QDs) grown by metalorganic chemical vapor deposition has been evidenced by temperature-dependent photoluminescence (PL) at different excitation power. The integrated emission intensity increases gradually in the range from 30 to 160 K and then decreases with a further increase in temperature at high excitation intensity, while this phenomenon disappeared at low excitation intensity. Under high excitation, about 40% emission enhancement at 160 K compared to that at low temperature, as well as a higher internal quantum efficiency (IQE) of 41.1%, was observed. A strong localization model is proposed to describe the possible processes of carrier transport, relaxation, and recombination. Using this model, the evolution of excitation-power-dependent emission intensity, shift of peak energy, and linewidth variation with elevating temperature is well explained. Finally, two-component decays of time-resolved PL (TRPL) with various excitation intensities are observed and analyzed with the biexponential model, which enables us to further understand the carrier relaxation dynamics in the InGaN QDs.