Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells

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• 作者：Jinling Yu (10) (8)
  Shuying Cheng (8)
  Yunfeng Lai (8)
  Qiao Zheng (8)
  Yonghai Chen (9)
  
  10. Key Laboratory of Optoelectronic Materials Chemistry and Physics ; Chinese Academy of Sciences ; Fuzhou ; 350002 ; People鈥檚 Republic of China
  8. Institute of Micro/Nano Devices and Solar Cells ; School of Physics and Information Engineering ; Fuzhou University ; Fuzhou ; 350108 ; People鈥檚 Republic of China
  9. Key Laboratory of Semiconductor Materials Science ; Institute of Semiconductors ; Chinese Academy of Sciences ; P.O. Box 912 ; Beijing ; 100083 ; People鈥檚 Republic of China
  
• 关键词：Circular photogalvanic effect spectroscopy ; Reflectance difference spectroscopy ; Rashba and Dresselhaus spin splitting ; In ; plane optical anisotropy
• 刊名：Nanoscale Research Letters
• 出版年：2014
• 出版时间：December 2014
• 年：2014
• 卷：9
• 期：1
• 全文大小：578 KB
• 参考文献：1. Wunderlich, J, Irvine, AC, Sinova, J, Park, BG, Zarbo, LP, Xu, XL, Kaestner, B, Novak, V, Jungwirth, T (2009) Spin-injection hall effect in a planar photovoltaic cell. Nat Phys 5: pp. 675-681 CrossRef
  2. Ganichev, SD, Prettl, W (2003) Spin photocurrents in quantum wells. J Phys-Condensed Matt 15: pp. 935-983 CrossRef
  3. Golub, LE (2003) Spin-splitting-induced photogalvanic effect in quantum wells. Physical Review B 67: pp. 235320 CrossRef
  4. Ganichev, SD, Bel鈥檏ov, VV, Golub, LE, Ivchenko, EL, Schneider, P, Giglberger, S, Eroms, J, De Boeck, J, Borghs, G, Wegscheider, W, Weiss, D, Prettl, W (2004) Experimental separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells. Phys Rev Lett 92: pp. 256601 CrossRef
  5. Yang, CL, He, HT, Ding, L, Cui, LJ, Zeng, YP, Wang, JN, Ge, WK (2006) Spectral dependence of spin photocurrent and current-induced spin polarization in an InGaAs/InAlAs two-dimensional electron gas. Phys Rev Lett 96: pp. 186605 CrossRef
  6. Cho, KS, Liang, CT, Chen, YF, Tang, YQ, Shen, B (2007) Spin-dependent photocurrent induced by Rashba-type spin splitting in Al 0.25 Ga 0.75 N/GaN heterostructures. Phys Rev B 75: pp. 085327 CrossRef
  7. Giglberger, S, Golub, LE, Bel鈥檏ov, VV, Danilov, SN, Schuh, D, Gerl, C, Rohlfing, F, Stahl, J, Wegscheider, W, Weiss, D, Prettl, W, Ganichev, SD (2007) Rashba and Dresselhaus spin splittings in semiconductor quantum wells measured by spin photocurrents. Phys Rev B 75: pp. 035327 CrossRef
  8. Eldridge, PS, Leyland, WJH, Lagoudakis, PG, Harley, RT, Phillips, RT, Winkler, R, Henini, M, Taylor, D (2010) Rashba spin-splitting of electrons in asymmetric quantum wells. Phys Rev B 82: pp. 045317 CrossRef
  9. Walser, MP, Siegenthaler, U, Lechner, V, Schuh, D, Ganichev, SD, Wegscheider, W, Salis, G (2012) Dependence of the Dresselhaus spin-orbit interaction on the quantum well width. Phys Rev B 86: pp. 195309 CrossRef
  10. Yin, C, Yuan, H, Wang, X, Liu, S, Zhang, S, Tang, N, Xu, F, Chen, Z, Shimotani, H, Iwasa, Y, Chen, Y, Ge, W, Shen, B (2013) Tunable surface electron spin splitting with electric double-layer transistors based on InN. Nano Lett 13: pp. 2024-2029 CrossRef
  11. Awschalom, DD, Flatte, ME (2007) Challenges for semiconductor spintronics. Nat Phys 3: pp. 153-159 CrossRef
  12. Wunderlich, J, Park, BG, Irvine, AC, Zarbo, LP, Rozkotova, E, Nemec, P, Novak, V, Sinova, J, Jungwirth, T (2010) Spin hall effect transistor. Science 330: pp. 1801-1804 CrossRef
  13. Fiederling, R, Keim, M, Reuscher, G, Ossau, W, Schmidt, G, Waag, A, Molenkamp, LW (1999) Injection and detection of a spin-polarized current in a light-emitting diode. Nature 402: pp. 787-790 CrossRef
  14. Kotissek, P, Bailleul, M, Sperl, M, Spitzer, A, Schuh, D, Wegscheider, W, Back, CH, Bayreuther, G (2007) Cross-sectional imaging of spin injection into a semiconductor. Nat Phys 3: pp. 872-877 CrossRef
  15. Dresselhaus, G (1955) Spin-orbit coupling effects in zinc blende structures. Phys Rev 100: pp. 580-586 CrossRef
  16. Bychkov, YA, Rashba, EI (1984) Oscillatory effects and the magnetic susceptibility of carriers in inversion layers. J Phys C Solid State Phys 17: pp. 6039 CrossRef
  17. Nitta, J, Akazaki, T, Takayanagi, H, Enoki, T (1997) Gate control of spin-orbit interaction in an inverted In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As heterostructure. Phys Rev Lett 78: pp. 1335-1338 CrossRef
  18. He, XW, Shen, B, Tang, YQ, Tang, N, Yin, C. M, Xu, FJ, Yang, Z. J, Zhang, GY, Chen, YH, Tang, CG, Wang, ZG (2007) Circular photogalvanic effect of the two-dimensional electron gas in Al x Ga 1-x N/GaN heterostructures under uniaxial strain. Appl Phys Lett 91: pp. 071912 CrossRef
  19. Yu, JL, Chen, YH, Jiang, CY, Liu, Y, Ma, H, Zhu, LP (2012) Spectra of Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in GaAs/AlGaAs quantum wells and their behaviors under external strain. Appl Phys Lett 100: pp. 152110 CrossRef
  20. Averkiev, NS, Golub, LE, Gurevich, AS, Evtikhiev, VP, Kochereshko, VP, Platonov, AV, Shkolnik, AS, Efimov, YP (2006) Spin-relaxation anisotropy in asymmetrical (001) Al x Ga 1-x As quantum wells from Hanle-effect measurements: relative strengths of Rashba and Dresselhaus spin-orbit coupling. Phys Rev B 74: pp. 033305 CrossRef
  21. de Andrada e Silva, EA, La Rocca, GC, Bassani, F (1997) Spin-orbit splitting of electronic states in semiconductor asymmetric quantum wells. Physical Review B 55: pp. 16293-16299 CrossRef
  22. Hao, YF, Chen, YH, Liu, Y, Wang, ZG (2009) Spin splitting of conduction subbands in Al 0.3 Ga 0.7 As/GaAs/Al x Ga 1-x As/Al 0.3 Ga 0.7 As step quantum wells. Europhys Lett 85: pp. 37003 CrossRef
  23. Cho, KS, Chen, YF, Tang, YQ, Shen, B (2007) Photogalvanic effects for interband absorption in AlGaN/GaN superlattices. Appl Phys Lett 90: pp. 041909 CrossRef
  24. Bel鈥檏ov, VV, Ganichev, SD, Schneider, P, Back, C, Oestreich, M, Rudolph, J, Hagele, D, Golub, LE, Wegscheider, W, Prettl, W (2003) Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. Solid State Commun 128: pp. 283-286 CrossRef
  25. Yu, JL, Chen, YH, Jiang, CY, Liu, Y, Ma, H, Zhu, LP (2012) Observation of the photoinduced anomalous hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature. Appl Phys Lett 100: pp. 142109 CrossRef
  26. Yu, JL, Chen, Y. H, Jiang, CY, Liu, Y, Ma, H (2011) Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells. J Appl Phys 109: pp. 053519 CrossRef
  27. Chen, YH, Ye, XL, Wang, JZ, Wang, ZG, Yang, Z (2002) Interface-related in-plane optical anisotropy in GaAs/Al x Ga 1-x As single-quantum-well structures studied by reflectance difference spectroscopy. Phys Rev B 66: pp. 195321 CrossRef
  28. Ye, XL, Chen, YH, Xu, B, Wang, ZG (2002) Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry. Materials Science and Engineering B-Solid State Materials for Advanced Technol 91: pp. 62-65 CrossRef
  29. Zhu, BF, Chang, YC (1994) Inversion asymmetry, hole mixing, and enhanced Pockels effect in quantum wells and superlattices. Phys Rev B 50: pp. 11932 CrossRef
  30. Kwok, SH, Grahn, HT, Ploog, K, Merlin, R (1992) Giant electropleochroism in GaAs-(Al,Ga) as heterostructures - the quantum-well Pockels effect. Phys Rev Lett 69: pp. 973-976 CrossRef
  31. Tang, CG, Chen, YH, Xu, B, Ye, XL, Wang, ZG (2009) Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry. J Appl Phys 105: pp. 103108 CrossRef
  32. Tang, CG, Chen, YH, Ye, XL, Wang, ZG, Zhang, WF (2006) Strain-induced in-plane optical anisotropy in (001) GaAs/AlGaAs superlattice studied by reflectance difference spectroscopy. J Appl Phys 100: pp. 113122 CrossRef
  33. Krebs, O, Voisin, P (1996) Giant optical anisotropy of semiconductor heterostructures with no common atom and the quantum-confined Pockels effect. Phys Rev Lett 77: pp. 1829 CrossRef
  34. Yu, J, Chen, Y, Cheng, S, Lai, Y (2013) Spectra of circular and linear photogalvanic effect at inter-band excitation in In 0.15 Ga 0.85 As/Al 0.3 Ga 0.7 As multiple quantum wells. Phys E: Low-dimensional Systems and Nanostructures 49: pp. 92-96
  35. Takagi, T (1978) Refractive index of Ga 1-x In x As prepared by vapor-phase epitaxy. Japanese J Appl Phys 17: pp. 1813-1817 CrossRef
  36. Park, YS, Reynolds, DSC (1963) Exciton structure in photoconductivity of CdS, CdSe, and CdS: Se single crystals. Phys Rev 132: pp. 2450-2457 CrossRef
  37. Ohno Y, Terauchi R, Adachi T, Matsukura F, Ohno H: Spin relaxation in GaAs(110) quantum wells . / Phys Rev Lett 83:4196鈥?199.
  38. Damen, TC, Via, L, Cunningham, JE, Shah, J, Sham, LJ (1991) Subpicosecond spin relaxation dynamics of excitons and free carriers in GaAs quantum wells. Phys Rev Lett 67: pp. 3432-3435 CrossRef
  39. Roussignol, P, Rolland, P, Ferreira, R, Delalande, C, Bastard, G, Vinattieri, A, Martinez-Pastor, J, Carraresi, L, Colocci, M, Palmier, JF, Etienne, B (1992) Hole polarization and slow hole-spin relaxation in an n-doped quantum-well structure. Phys Rev B 46: pp. 7292-7295 CrossRef
  40. Mattana, R, George, J-M, Jaffr猫s, H, Nguyen Van Dau, F, Fert, A, L茅pine, B, Guivarc鈥檋, A, J茅z茅quel, G (2003) Electrical detection of spin accumulation in a p-type GaAs quantum well. Phys Rev Lett 90: pp. 166601 CrossRef
  41. Bulaev, DV, Loss, D (2005) Spin relaxation and decoherence of holes in quantum dots. Phys Rev Lett 95: pp. 076805 CrossRef
  42. Gvozdic, DM, Ekenberg, U (2006) Superefficient electric-field-induced spin-orbit splitting in strained p-type quantum wells. Europhys Lett 73: pp. 927 CrossRef
  43. Chao, CY, Chuang, SL (1992) Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells. Physical Review B 46: pp. 4110 CrossRef
  44. Foreman, BA (1998) Analytical envelope-function theory of interface band mixing. Phys Rev Lett 81: pp. 425 CrossRef
  45. Muraki, K, Fukatsu, S, Shiraki, Y, Ito, R (1992) Surface segregation of in atoms during molecular-beam epitaxy and its influence on the energy-levels in InGaAs/GaAs quantum-wells. Appl Phys Lett 61: pp. 557-559 CrossRef
  46. Chen, YH, Wang, ZG, Yang, ZY (1999) A new interface anisotropic potential of zinc-blende semiconductor interface induced by lattice mismatch. Chinese Phys Lett 16: pp. 56-58 CrossRef
  47. Yu, JL, Chen, YH, Tang, CG, Jiang, CY, Ye, X (2011) Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain. Nanoscale Research Letters 6: pp. 210 CrossRef
  48. Lin, Y, Koga, T, Nitta, J (2005) Effect of an InP/In 0.53 Ga 0.47 As interface on spin-orbit interaction in In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As heterostructures. Phys Rev B 71: pp. 045328 CrossRef
  
• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X

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