Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: A theoretical assessment

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• 作者：Hasan Y&#x131 ; ld&#x131 ; r&#x131 ; m ; Ceyhun Bulutay
• 关键词：Third-order nonlinearities ; Embedded nanocrystals ; Optical switching parameter
• 刊名：Optics Communications
• 出版年：2008
• 期刊代码：50_00304018
• 类别：ph
• 出版时间：August 2008
• 卷：281
• 期：15-16
• 页码：4118-4120
• 文件大小：470 K

摘要

Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon absorption and optical switching parameter are examined from small clusters to NCs up to a size of 3 nm. Compared to bulk values, Si NCs show higher third-order optical nonlinearities and much wider two-photon absorption-free energy gap which gives rise to enhancement in the optical switching parameter.