Magnetoelectric coupling in multiferroic heterostructure of rf-sputtered Ni-Mn-Ga thin film on PMN-PT

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• 作者：M.Y. Teferi^a ; ^b ; ^{mandefero2002@yahoo.com} ; V.S. Amaral^a ; ^b ; A.C. Lounrenco^a ; ^b ; S. Das^a ; ^b ; J.S. Amaral^a ; ^b ; ^e ; D.V. Karpinsky^b ; ^c ; N. Soares^a ; ^b ; N.A. Sobolev^a ; ^d ; A.L. Kholkin^b ; ^c ; P.B. Tavares^f
• 关键词：Magnetoelectric ; Multiferroic ; Thin film ; Ni&ndash ; Mn&ndash ; Ga alloy ; Piezoelectric
• 刊名：Journal of Magnetism and Magnetic Materials
• 出版年：2012
• 期刊代码：31_03048853
• 类别：ph
• 出版时间：June, 2012
• 卷：324
• 期：11
• 页码：1882-1886
• 文件大小：397 K

摘要

In this paper, we report a preparation of multiferroic heterostructure from thin film of Ni-Mn-Ga (NMG) alloy and lead magnesium niobate-lead titanate (PMN-PT) with effective magnetoelectric (ME) coupling between the film as ferromagnetic material and PMN-PT as piezoelectric material. The heterostructure was prepared by relatively low temperature (400 掳C) deposition of the film on single crystal of piezoelectric PMN-PT substrate using rf magnetron co-sputtering of Ni₅₀Mn₅₀ and Ni₅₀Ga₅₀ targets. Magnetic measurements by Superconducting Quantum Interference Design (SQIUD) Magnetometer and Vibrating Sample Magnetometer (VSM) on the film revealed that the film is in ferromagnetically ordered martensitic state at room temperature with saturation magnetization of 鈭?40 emu/cm³ and Curie temperature of 鈭?37 K. Piezoresponse force microscopy (PFM) measurement done at room temperature on the substrate showed the presence of expected hysteresis loop confirming the stability of the piezoelectric state of the substrate after deposition. Room temperature ME voltage coefficient (伪_ME) of the heterostructure was measured as a function of applied bias dc magnetic field in Longitudinal-Transverse (L-T) ME coupling mode by lock-in technique. A maximum ME coefficient 伪_ME of 3.02 mV/cm Oe was measured for multiferroic NMG/PMN-PT heterostructure which demonstrates that there is ME coupling between the film as ferromagnetic material and PMN-PT as piezoelectric material.