Ferroelectric switching behavior of pulsed laser deposited Bab>0.8b>Srb>0.2b>TiOb>3b> thin films

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• 作者：José ; P.B. Silva ; ^{josesilva@fisica.uminho.pt} ; Koppole C. Sekhar ; Sofia A.S. Rodrigues ; Anatoli Khodorov ; Javier Martí ; n-Sanchez ; M&aacute ; rio Pereira ; Maria J.M. Gomes
• 关键词：Films ; BaTiO3 and titanates ; Ferroelectric properties ; Fatigue ; Polarization switching
• 刊名：Current Applied Physics
• 出版年：2012
• 期刊代码：15_15671739
• 类别：ph
• 出版时间：July, 2012
• 卷：12
• 期：4
• 页码：1144-1147
• 文件大小：519 K

摘要

The effect of pulse amplitude on the ferroelectric and switching properties of pulsed laser deposited Bab>0.8b>Srb>0.2b>TiOb>3b> thin films has been studied. The structural and morphological analysis revealed that the films had a well crystallized perovskite phase and grain size of about 30-40 nm. A well saturated P-E hysteresis loop was observed with a remnant polarization (m>Pm>b>m>rm>b>) 鈮?#xA0;4.8 渭C/cm² and a coercive field 鈮?#xA0;100 kV/cm at a frequency of 1 kHz. The m>Pm>b>m>rm>b> has been found to be decreased only 4.3%after passing 8.0 脳 10⁸ cycles. The analysis of switching response with nucleation limited switching model reveals that characteristic switching time (m>tm>b>0b>) variance is due to the random distribution of the local electric fields. The peak value of polarization current and m>tm>b>0b> exhibits exponential dependence on reciprocal of pulse amplitude.