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IPM死区保护与功率驱动保护冲突的一种解决技术
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  • 英文篇名:Technology to Solve The conflict of IPM Dead Zone Protection and Power Drive Protection
  • 作者:严海龙
  • 英文作者:Yan Hailong;College of Electrical Engineering and Automation,Fuzhou University;
  • 关键词:死区保护 ; 功率驱动保护 ; 冲突问题 ; 与非门组合
  • 英文关键词:dead zone protection;;power drive protection;;conflict;;combination of NAND gate circuit
  • 中文刊名:DQJS
  • 英文刊名:Electrical Engineering
  • 机构:福州大学电气工程与自动化学院;
  • 出版日期:2016-10-15
  • 出版单位:电气技术
  • 年:2016
  • 期:No.204
  • 基金:欧盟FP7国际科技基金资助项目(909880);; 福建省杰出青年科学基金资助项目(2012J06012)
  • 语种:中文;
  • 页:DQJS201610023
  • 页数:4
  • CN:10
  • ISSN:11-5255/TM
  • 分类号:94-97
摘要
简单分析了交流变频调速中IPM死区保护和DSP功率驱动保护的原理与作用,详细阐明了两者之间在具体实现时所产生的冲突问题。并且针对这一问题,本文提出了一种解决技术,该技术采用与非门组合电路,简单实现了保护信号的冲突问题。所设计的电路可同时满足IPM正常工作、死区保护、DSP功率驱动保护的需要。仿真结果,最终验证了该方案的可行性。
        This article briefly analyzed the principle of IPM dead zone protection and DSP power drive protection for AC frequency control system. Then this article illustrated the conflict between the two protection during implementation. To solve this problem, a solution technique was proposed in this article. The technology uses a combination of NAND gate circuit. It can simply solve the conflict of protection waveforms during the two protection. The design of this circuit can also meet the needs of IPM working, dead zone protection, DSP power drive protection. The experimental results validated the feasibility of the solution.
引文
[1]Wu Fengjiang,Duan Jiandong,Feng Fan.Modified single-carrier multilevel sinusoidal pulse width modulation for asymmetrical insulated gate bipolar transistor-clamped grid-connected inverter[J].IET Power Electronics,2015,8(8):1531-1541.
    [2]Sidney RB,Clark PR.Regular-sampled harmonicelimination PWM control of inverter drives[J].IEEE Trans.on Power Electronics,1995,10(5):521-531.
    [3]陈坚.电力电子学——电力电子变换和控制技术[M].2版.北京:高等教育出版社,2004.
    [4]冬雷.DSP原理及电机控制系统应用[M].2版.北京:北京航空航天大学出版社,2007.
    [5]严海龙,王榕生.新型线性组合采样法SPWM谐波数值分析[J].电气技术,2012,13(9):61-64.

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