碳化硅MOSFET电路模型及其应用
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摘要
建立了新颖的碳化硅金属氧化物半导体场效应晶体管等效电路模型.在常规碳化硅金属氧化物半导体场效应晶体管等效电路模型的基础上,引入了栅极氧化层泄漏电流模型和PN结的泄漏电流模型,并用能够反映碳化硅/氧化层界面特性的迁移率模型替换常规碳化硅金属氧化物半导体场效应晶体管电路模型中的常数迁移率.有关文献的实验数据验证了所建立的碳化硅金属氧化物半导体场效应晶体管电路模型的准确性.与常规碳化硅金属氧化物半导体场效应晶体管电路模型相比,文中的电路模型能较为准确地模拟出碳化硅金属氧化物半导体场效应晶体管的氧化层泄漏电流和短路失效现象.另外,该模型还可以用于讨论碳化硅/氧化层界面陷阱对工作在短路状态下的碳化硅金属氧化物半导体场效应晶体管特性的影响.
A new equivalent-circuit model of the SiC MOSFET is suggested.Based on the conventional equivalent-circuit model of the SiC MOSFET,the leakage current of the gate oxide and PN junction is included,and the invariable mobility in the conventional model is replaced by an advanced mobility model which can reflect the interface characterization of SiC/SiO2.The accuracy of the proposed model is verified by experimental results from references.Compared to the conventional model,the proposed model can simulate the gate leakage current and the failure of SiC MOSFET.In addition,the suggested model can be utilized to study the effect of interface traps on the characteristics of the SiC MOSFET operated under the short-circuit condition.
A new equivalent-circuit model of the SiC MOSFET is suggested.Based on the conventional equivalent-circuit model of the SiC MOSFET,the leakage current of the gate oxide and PN junction is included,and the invariable mobility in the conventional model is replaced by an advanced mobility model which can reflect the interface characterization of SiC/SiO2.The accuracy of the proposed model is verified by experimental results from references.Compared to the conventional model,the proposed model can simulate the gate leakage current and the failure of SiC MOSFET.In addition,the suggested model can be utilized to study the effect of interface traps on the characteristics of the SiC MOSFET operated under the short-circuit condition.
引文
[1]汤晓燕,张玉明,张义门.4H-SiC n-MOSFET新型反型层迁移率模型[J].西安电子科技大学学报,2011,38(1):42-46.TANG Xiaoyan,ZHANG Yuming,ZHANG Yimen.New Inversion Channel Electron Mobility Model of the 4H-SiC nMOSFET[J].Journal of Xidian University,2011,38(1):42-46.
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[11]SUN K,WU H,LU J,et al.Improved Modeling of Medium Voltage SiC MOSFET within Wide Temperature Range[J].IEEE Transactions on Power Electronics,2014,29(5):2229-2237.
[12]CHEN K,ZHAO Z,YUAN L,et al.The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET[J].IEEE Transactions on Electron Devices,2015,62(2):333-338.
[13]SOMETANI M,OKAMOTO D,HARADA S,et al.Temperature-dependent Analysis of Conduction Mechanism of Leakage Current in Thermally Grown Oxide on 4H-SiC[J].Journal of Applied Physics,2015,117(2):024505.
[14]SAMANTA P,MANDAL K C.Leakage Current Conduction,Hole Injection,and Time-dependent Dielectric Breakdown of n-4H-SiC MOS Capacitors during Positive Bias Temperature Stress[J].Journal of Applied Physics,2017,121(3):034501.
[15]OUENNOUGHI Z,STRENGER C,BOUROUBA F,et al.Conduction Mechanisms in Thermal Nitride and Dry Gate Oxides Grown on 4H-SiC[J].Microelectronics Reliability,2013,53(12):1841-1847.
[16]PEREZ-TMOAS A,BROSSELARD P,GODIGNON P,et al.Field-effect Mobility Temperature Modeling of 4H-SiCMetal-oxide-semiconductor Transistors[J].Journal of Applied Physics,2006,100(11):114508.
[17]ROZEN J,DHAR S,ZVANUT M E,et al.Density of Interface States,Electron Traps,and Hole Traps as a Function of the Nitrogen Density in SiO2on SiC[J].Journal of Applied Physics,2009,105(12):124506.
[2]韩茹,杨银堂.6H-SiC NMOS与PMOS温度特性分析[J].西安电子科技大学学报,2007,34(1):16-20.HAN Ru,YANG Yintang.Analyses of the Temperature Properties of the 6H-SiC NMOS and PMOS[J].Journal of Xidian University,2007,34(1):16-20.
[3]KAMPITSIS G,PAPATHANASSIOU S,MANIAS S.Comparative Evaluation of the Short-circuit Withstand Capability of 1.2kV Silicon Carbide(SiC)Power Transistors in Real Life Applications[J].Microelectronics Reliability,2015,55(12):2640-2646.
[4]OTHMAN D,BERKANI M,LEFEBVRE S,et al.Comparison Study on Performances and Robustness between SiCMOSFET&JFET Devices-Abilities for Aeronautics Application[J].Microelectronics Reliability,2012,52(9/10):1859-1864.
[5]ROMANO G,FAYYAZ A,RICCIO M,et al.A Comprehensive Study of Short-circuit Ruggedness of Silicon Carbide Power MOSFETs[J].IEEE Journal of Emerging and Selected Topics in Power Electronics,2016,4(3):978-987.
[6]WANG Z,SHI X,TOLBERT L M,et al.Temperature-dependent Short-circuit Capability of Silicon Carbide Power MOSFETs[J].IEEE Transactions on Power Electronics,2016,31(2):1555-1566.
[7]NGUYEN T T,AHMED A,THANG T V,et al.Gate Oxide Reliability Issues of SiC MOSFETs under Short-circuit Operation[J].IEEE Transactions on Power Electronics,2015,30(5):2445-2455.
[8]CHEN C,LABROUSSE D,LEFEBVRE S,et al.Study of Short-circuit Robustness of SiC MOSFETs,Analysis of the Failure Modes and Comparison with BJTs[J].Microelectronics Reliability,2015,55(9/10):1708-1713.
[9]YOSHIOKA H,SENZAKI J,SHIMOZATO A,et al.Effects of Interface State Density on 4H-SiC n-channel Fieldeffect Mobility[J].Applied Physics Letters,2014,104(8):83516.
[10]WANG J,ZHAO T,LI J,et al.Characterization,Modeling,and Application of 10-kV SiC MOSFET[J].IEEETransactions on Electron Devices,2008,55(8):1798-1806.
[11]SUN K,WU H,LU J,et al.Improved Modeling of Medium Voltage SiC MOSFET within Wide Temperature Range[J].IEEE Transactions on Power Electronics,2014,29(5):2229-2237.
[12]CHEN K,ZHAO Z,YUAN L,et al.The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET[J].IEEE Transactions on Electron Devices,2015,62(2):333-338.
[13]SOMETANI M,OKAMOTO D,HARADA S,et al.Temperature-dependent Analysis of Conduction Mechanism of Leakage Current in Thermally Grown Oxide on 4H-SiC[J].Journal of Applied Physics,2015,117(2):024505.
[14]SAMANTA P,MANDAL K C.Leakage Current Conduction,Hole Injection,and Time-dependent Dielectric Breakdown of n-4H-SiC MOS Capacitors during Positive Bias Temperature Stress[J].Journal of Applied Physics,2017,121(3):034501.
[15]OUENNOUGHI Z,STRENGER C,BOUROUBA F,et al.Conduction Mechanisms in Thermal Nitride and Dry Gate Oxides Grown on 4H-SiC[J].Microelectronics Reliability,2013,53(12):1841-1847.
[16]PEREZ-TMOAS A,BROSSELARD P,GODIGNON P,et al.Field-effect Mobility Temperature Modeling of 4H-SiCMetal-oxide-semiconductor Transistors[J].Journal of Applied Physics,2006,100(11):114508.
[17]ROZEN J,DHAR S,ZVANUT M E,et al.Density of Interface States,Electron Traps,and Hole Traps as a Function of the Nitrogen Density in SiO2on SiC[J].Journal of Applied Physics,2009,105(12):124506.
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