SiC MOSFET驱动技术及其在电力系统中的应用
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摘要
设计了并网逆变器以及电力电子变压器中SiC MOSFET功率器件的驱动电路,搭建了用于测试驱动电路的双脉冲测试平台,并且介绍了谐振门极驱动电路的工作原理、特点以及优势;还对电网中SiC MOSFET的过电流保护原理进行了详细分析,进而给出了两种过电流保护方案,并且论证了两种方案的可行性。最后,介绍了几种常见的SiC MOSFET在电网中的应用实例,并对其应用进行总结与展望。
The drive circuit of SiC MOSFET in grid-connected inverter and power electronic transformer was designed,the double pulse test platform was built to test gate driver,and then the characteristics and advantages of resonant gate drive circuit were introduced.The principle of overcurrent protection of SiC MOSFET in power system was analyzed in detail.Two overcurrent protection schemes were proposed,and the in feasibility was demonstrated.Finally,several common applications of SiC MOSFET in power system were introduced,and their prospects were summarized.
The drive circuit of SiC MOSFET in grid-connected inverter and power electronic transformer was designed,the double pulse test platform was built to test gate driver,and then the characteristics and advantages of resonant gate drive circuit were introduced.The principle of overcurrent protection of SiC MOSFET in power system was analyzed in detail.Two overcurrent protection schemes were proposed,and the in feasibility was demonstrated.Finally,several common applications of SiC MOSFET in power system were introduced,and their prospects were summarized.
引文
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[3] LAGIER T,LADOUX P,DWORAKOWSKI P.Potential of silicon carbide MOSFETs in the DC/DC converters for future HVDC offshore wind farms[J].High Voltage,2017,2(4):233-243.
[4] YIN S,TSENG K J,SIMANJORANG R.Experimental comparison of high-speed gate driver design for 1.2-kV/120-A Si IGBT and SiC MOSFET modules[J].IET Power Electronics,2017,10(9):979-986.
[5] RABKOWSKI J,PATEK T.Comparison of the power losses in 1 700VSi IGBT and SiC MOSFET modules including reverse conduction[C]∥IEEE.European Conference on Power Electronics and Applications.Geneva,Switzerland,2015:1-10.
[6]朱义诚,赵争鸣,王旭东,等.SiC MOSFET与SiC SBD换流单元瞬态模型[J].电工技术学报,2017,32(12):58-69.ZHU Y C,ZHAO Z M,WANG X D,et al.Analytical transient model of commutation units with SiC MOSFET and SiC SBD pair[J].Transactions of China Electrotechnical Society,2017,32(12):58-69.
[7]邓小川,谭犇,万殊燕,等.超高压SiC电力电子器件及其在电网中的应用[J].智能电网,2017,5(8):733-741.DENG X C,TAN H,WAN S Y,et al.Ultra high voltage SiC power electronic device and its application in power grid[J].Smart Grid,2017,5(8):733-741.
[8] FAYYAZ A,CASTELLAZZI A.High temperature pulsed-gate robustness testing of SiC power MOSFETs[J].Microelectronics Reliability,2015,55(9/10):1724-1728.
[9] CHENNU J V P S,MAHESHWARI R,LI H.New resonant gate driver circuit for high-frequency application of silicon carbide MOSFETs[J].IEEE Transactions on Industrial Electronics,2017,64(10):8277-8287.
[10] SUN Y,SUGANO R,WEI X,et al.High-speed driver for SiC MOSFET based on class-E inverter[C]IEEE.∥IEEE International Symposium on Circuits and Systems,2017:1-4.
[11] BHATTACHARYA S.Wide-band Gap(WBG)devices enabled MV power converters for utility applications-opportunities and challenges[C]∥IEEE.Wide Bandgap Power Devices and Applications,2014:1-125.
[12] HUANG A Q,ZHU Q,WANG L,et al.15kV SiC MOSFET:an enabling technology for medium voltage solid state transformers[J].CPSS Transactions on Power Electronics&Applications,2017,2(2):118-130.
[13] WANG Z,SHI X,TOLBERT L M,et al.A high temperature silicon carbide MOSFET power module with integrated siliconon-insulator based gate drive[J].IEEE Transactions on Power Electronics,2015,30(3):1432-1445.
[14] NAYAK P,HATUA K.Active gate driving technique for a 1200VSiC MOSFET to minimize detrimental effects of parasitic inductance in the converter layout[J].IEEE Transactions on Industry Applications,2017,54(2):1622-1633.
[15]曾正,邵伟华,陈昊,等.基于栅极驱动回路的SiC MOSFET开关行为调控[J].中国电机工程学报,2018,38(4):1165-1176.ZENG Z,SHAO W H,CHEN H,et al.On-off behavior control of SiC MOSFET by gate drive loops[J].Proceedings of the CSEE,2018,38(4):1165-1176.
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