D波段InP基高增益低噪声放大芯片的设计与实现（英文）
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摘要
利用90nmInAlAs/InGaAs/InPHEMT工艺设计实现了两款D波段(110～170GHz)单片微波集成电路放大器.两款放大器均采用共源结构,布线选取微带线.基于器件A设计的三级放大器A在片测试结果表明:最大小信号增益为11.2dB@140GHz,3dB带宽为16GHz,芯片面积2.6mm×1.2mm.基于器件B设计的两级放大器B在片测试结果表明:最大小信号增益为15.8dB@139GHz,3dB带宽12GHz,在130～150GHz频带范围内增益大于10dB,芯片面积1.7mm×0.8mm,带内最小噪声为4.4dB、相关增益15dB@141GHz,平均噪声系数约为5.2dB.放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数.该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义.
In this paper,two D-band( 110 ～ 170 GHz) monolithic millimeter-wave integrated circuit( MMIC)amplifiers have been designed and realized using 90-nm InA lAs/InG aAs/InP high gain electron mobility transistors( HEMT) technology. The amplifiers are developed in common source and microstrip technology. The three-stage MMIC amplifier A is designed based on device A and measured on wafer with a small-signal peak gain of 11. 2 dB at 140 GHz and 3-dB-bandwidth is 16 GHz with a chip size of 2. 6 mm × 1. 2 mm. The two-stage MMIC amplifier B is designed based on device B and measured on wafer with a small-signal peak gain of 15. 8 dB at 139 GHz and3-dB-bandwidth is 12 GHz and the gain is higher than 10 dB from 130 GHz to 150 GHz with a chip size of 1. 7 mm× 0. 8 mm. The amplifier B also shows an excellent noise character with noise figure of 4. 4 dB when the associated gain of 15 dB is acquired at 141 GHz and the average noise figure is about 5. 2 dB over the bandwidth. The amplifier B exhibits a higher gain-per-stage,competitive gain-area ratio and lower noise figure. The successful realization of MMIC amplifiers is of great potential for receiver-front-end applications at D-band.
In this paper,two D-band( 110 ～ 170 GHz) monolithic millimeter-wave integrated circuit( MMIC)amplifiers have been designed and realized using 90-nm InA lAs/InG aAs/InP high gain electron mobility transistors( HEMT) technology. The amplifiers are developed in common source and microstrip technology. The three-stage MMIC amplifier A is designed based on device A and measured on wafer with a small-signal peak gain of 11. 2 dB at 140 GHz and 3-dB-bandwidth is 16 GHz with a chip size of 2. 6 mm × 1. 2 mm. The two-stage MMIC amplifier B is designed based on device B and measured on wafer with a small-signal peak gain of 15. 8 dB at 139 GHz and3-dB-bandwidth is 12 GHz and the gain is higher than 10 dB from 130 GHz to 150 GHz with a chip size of 1. 7 mm× 0. 8 mm. The amplifier B also shows an excellent noise character with noise figure of 4. 4 dB when the associated gain of 15 dB is acquired at 141 GHz and the average noise figure is about 5. 2 dB over the bandwidth. The amplifier B exhibits a higher gain-per-stage,competitive gain-area ratio and lower noise figure. The successful realization of MMIC amplifiers is of great potential for receiver-front-end applications at D-band.
引文
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[15]Yishay R B,Shumaker E,Elad D.A 122-150 GHz LNA with 30 d Bgain and 6.2 d B noise figure in SiGe BiCMOS technology[C].Silicon Monolithic Integrated Circuits in Rf Systems.IEEE,2015:15-17.
[16]WANG Zhi-Ming,HUANG Hui,HU Zhi-Fu,et al.Design and Realization of THz In Al As/InGaAs InP-based PHEMTs[J].J.Infrared Millim.Waves(王志明,黄辉,胡志富,等.太赫兹In P基InAlAs/InGa As PHEMTs的研制,红外与毫米波学报),2018,37(2):135-139.
[17]Katayama K,Takano K,Amakawa S,et al.14.4-dB CMOS D-band low-noise amplifier with 22.6 m W power consumption utilizing biasoptimization technique[C].IEEE International Symposium on RadioFrequency Integration Technology.IEEE,2016:1-3.
[18]Weber R,Massler H,Leuther A.D-band low-noise amplifier MMICwith 50%bandwidth and 3.0 dB noise figure in 100 nm and 50 nm m HEMT technology[C].Microwave Symposium.IEEE,2017:756-759.
[2]Kim D H,Kim D,Rieh J S.A$D$-Band CMOS amplifier with a new dual-frequency interstage matching technique[J].IEEE Transactions on Microwave Theory&Techniques,2017,65(5):1580-1588.
[3]Parveg D,Varonen M,Karaca D,et al.Design of a D-Band CMOSamplifier utilizing coupled slow-wave coplanar waveguides[J].IEEETransactions on Microwave Theory&Techniques,2017,99:1-15.
[4]Leong K M K H,Mei X,Yoshida W H,et al.850 GHz receiver and transmitter front-ends using In P HEMT[J].IEEE Transactions on Terahertz Science&Technology,2017,99:1-10.
[5]Cleriti R.D-band LNA using a 40 nm Ga As m HEMT technology[C].12th European Microwave Integrated Circuits Conference(EuMIC),Nuremberg,2017:105-108.
[6]Varonen M,Larkoski P,Fung A,et al.160-270-GHz InP HEMTMMIC low-noise amplifiers[J].IEEE Compound Semiconductor Integrated Circuit Symposium(CSICS),2012:1-4.
[7]Karkkainen M,Kantanen M,Caujolle-Bert S,et al.MHEMT G-band low-noise amplifiers[C].Microwave Symposium Digest.IEEE,2014:1-4.
[8]Chiong C C,Chen H M,Kao J C,et al.180-220 GHz MMIC amplifier using 70-nm Ga As MHEMT technology[C].IEEE International Symposium on Radio-Frequency Integration Technology.IEEE,2016:1-4.
[9]Weissbrodt E,Kallfass I,Weber R,et al.Low-noise amplifiers in D-band using 100 nm and 50 nm m HEMT technology[C].German Microwave Conference.IEEE,2010:55-58.
[10]Wang Y,Wu H,Li J,et al.The D-band MMIC LNA circuit using70nm InP HEMT technology[C].IEEE,International Conference on Asic.IEEE,2017:887-890.
[11]Merkle T,Leuther A,Koch S,et al.Backside process free broadband amplifier MMICs at D-Band and H-Band in 20 nm m HEMT technology[C].Compound Semiconductor Integrated Circuit Symposium.IEEE,2014:1-4.
[12]Tessmann A,Leuther A,Hurm V,et al.Metamorphic HEMT MMICs and modules operating between 300 and 500 GHz[J].IEEE Journal of Solid-State Circuits,2011,46(10):2193-2202.
[13]Leong K,Mei G,Radisic V,et al.THz integrated circuits using In PHEMT transistors[C].International Conference on Indium Phosphide and Related Materials.IEEE,2013:1-4.
[14]Deal W,Mei X B,Leong K M K H,et al.THz monolithic integrated circuits using InP high electron mobility transistors[J].IEEE Transactions on Terahertz Science&Technology,2011,1(1):25-32.
[15]Yishay R B,Shumaker E,Elad D.A 122-150 GHz LNA with 30 d Bgain and 6.2 d B noise figure in SiGe BiCMOS technology[C].Silicon Monolithic Integrated Circuits in Rf Systems.IEEE,2015:15-17.
[16]WANG Zhi-Ming,HUANG Hui,HU Zhi-Fu,et al.Design and Realization of THz In Al As/InGaAs InP-based PHEMTs[J].J.Infrared Millim.Waves(王志明,黄辉,胡志富,等.太赫兹In P基InAlAs/InGa As PHEMTs的研制,红外与毫米波学报),2018,37(2):135-139.
[17]Katayama K,Takano K,Amakawa S,et al.14.4-dB CMOS D-band low-noise amplifier with 22.6 m W power consumption utilizing biasoptimization technique[C].IEEE International Symposium on RadioFrequency Integration Technology.IEEE,2016:1-3.
[18]Weber R,Massler H,Leuther A.D-band low-noise amplifier MMICwith 50%bandwidth and 3.0 dB noise figure in 100 nm and 50 nm m HEMT technology[C].Microwave Symposium.IEEE,2017:756-759.
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