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T型三电平逆变器功率器件结温控制研究
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  • 英文篇名:Research on the Power Devices Junction Temperature Control of T-type Three-level Inverter
  • 作者:周朋飞 ; 陈权 ; 李国丽
  • 英文作者:ZHOU Pengfei;CHEN Quan;LI Guoli;College of Electrical Engineering and Automation,Anhui University;National Engineering Laboratory of Energy-saving Motor&Control Technology,Anhui University;Engineering Research Center of Power Quality,Ministry of Education,Anhui University;
  • 关键词:T型三电平 ; 功率器件 ; 开关频率 ; 多重化结构 ; 可靠性
  • 英文关键词:T-type three-level;;power devices;;switching frequency;;multiplex structure;;reliability
  • 中文刊名:DQCZ
  • 英文刊名:Electric Drive
  • 机构:安徽大学电气工程与自动化学院;安徽大学高节能电机及控制技术国家地方联合实验室;安徽大学教育部电能质量工程研究中心;
  • 出版日期:2019-04-19
  • 出版单位:电气传动
  • 年:2019
  • 期:v.49;No.354
  • 基金:安徽省自然科学基金(1308085ME81);; 安徽省高校自然基金(KJ2013A011)
  • 语种:中文;
  • 页:DQCZ201904008
  • 页数:5
  • CN:04
  • ISSN:12-1067/TP
  • 分类号:40-44
摘要
三电平逆变器系统中绝缘栅双极晶体管(IGBT)的结温及其幅值变化直接影响器件热失效等可靠性问题。以T型三电平逆变器为对象,结合IGBT的开关损耗模型及结温热模型,推导出其开关损耗、结温与开关频率之间的定量关系。提出采用多重化结构对逆变系统中T型三电平逆变器拓扑进行重构,在不影响系统输出性能的前提下有效地降低了功率器件的开关损耗和结温,提高系统的可靠性。仿真和实验验证了所提控制策略的有效性。
        The junction temperature and amplitude fluctuation of insulated gate bipolar transisto(rIGBT)affect devices failure directly due to overheating and other reliability problems in the three-level inverter system. T-type threelevel inverter as the research object,combined with switching loss model and junction temperature model,the quantitative relationship between switching loss,junction temperature with switching frequency was derived. The reconfiguration of T-type three-level inverter was proposed by using multiplex structure. The switching loss and junction temperature of the power device could be reduced effectively without affecting the output performance of the inverter,and the reliability of the system could be improved. Simulation and experimental results show the effectiveness of the proposed control strategy.
引文
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