GIC-4117串列加速器系统及应用研究
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摘要
本论文包括三个部分内容,第一部分介绍GIC4117串列加速器为主体的加速器系统,包括离子源、加速管、质量分析器、聚焦、扫描系统等的工作原理与实验技术,还描述了针对系统设备所做的一些升级改进工作,如沟道测试系统的自动化控制,串列加速器的加速管的拆卸与安装过程等,实验中遇到的一些问题和解决办法。
第二部分是介绍离子注入和离子束分析,对包括卢瑟福背散射Rutherford Backscattering Spectrometry (RBS)分析、质子激发X射线荧光射线Proton Induced X-Ray Emission(PIXE)分析、弹性反冲分析、核反应分析和沟道分析在内的多种分析方法的原理、实验技术、相关分析软件,各种核探测器技术等都做了详细介绍。
第三部分是加速器在制备和分析磁性半导体材料方面的应用,主要介绍离子注入形成的磁性半导体材料的离子束分析和其它表征结果,系统研究了注入剂量、退火条件等对材料结构和铁磁性的影响。
主要工作内容和结论如下：
1.加速器的运行、改造与升级,首次用标准安装程序来安装串列加速器的加速管,改进了RBS/C系统,使得沟道扫描自动化能正常运行。
2.GaN薄膜用多种能量调制注入Co离子,钴原子均匀分布在GaN表面以下的200nm左右的注入层中,离子注入造成表面溅射和损伤,还导致晶体结构的变化。离子注入形成的损伤率在50%到70%左右,经过退火后,晶体结构得到了一定程度的恢复,850℃退火20分钟恢复了60%的损伤。退火的GaN:Co样品表现出室温下的铁磁性。
3.硅锗薄膜的大剂量铁离子注入形成硅铁化合物,空气气氛下的高温退火引起的氧化极其严重,会使得在注入层之上形成较厚的氧化层,铁原子和Ge原子都有往深处扩散的趋势。
4.Mn注入CdTe形成了CdTe:Mn,观测到阴极荧光峰随注入和退火条件的变化,为电滞回线提供了解释的依据。
This paper is intended to provide an introduction of our work about the accelerator lab which based on a GIC4117 tandem. A multifunction ion beam system has been established based on a tandem accelerator, which including low and high energy (10-30keV,50-200keV, and 500-5000keV) implantation, RBS, PIXE, ERD, and NRA, Channeling analysis.
The paper is divided into three parts. In the first part, an introduction of our work on the equipments which is concerned with accelerators is given, which including the following part:installation of negative ion implantation chamber, assembling of new 1.7MV accelerate tube, a computerized controlled Rutherford backscattering/channeling system's installment, which main components are a PC equipped with a multichannel analyzer data acquisition board, motion control hardware including the stepping motor controller and integrated circuit modules, and a LabVIEW programmed operating system with associated electronics.
The second part deals with the various kinds ion beam analysis techniques including the fundamentals and experimental technique. This part focus on the fundamental physics of the interaction between incident ions and individual atoms in the solid provides the underlying science for ion beam analysis, then, and gives some introduction about the experimental details such as the ion beam analysis instrumentation, the Computer Simulation Codes.
The third part covers the accelerator's applications, giving several examples of research on multiferroics films synthesized by ion implantation and analysis by RBS/Channeling. Several semiconductor films including CdS, GeSi, and GaN are implanted with metal ions. The structural and ferromagnetic properties are studied. The virgin GaN films have an excellent crystal quantity and in the implanted samples 60% disorder induced by ion implantation was recovered after annealing.
第二部分是介绍离子注入和离子束分析,对包括卢瑟福背散射Rutherford Backscattering Spectrometry (RBS)分析、质子激发X射线荧光射线Proton Induced X-Ray Emission(PIXE)分析、弹性反冲分析、核反应分析和沟道分析在内的多种分析方法的原理、实验技术、相关分析软件,各种核探测器技术等都做了详细介绍。
第三部分是加速器在制备和分析磁性半导体材料方面的应用,主要介绍离子注入形成的磁性半导体材料的离子束分析和其它表征结果,系统研究了注入剂量、退火条件等对材料结构和铁磁性的影响。
主要工作内容和结论如下：
1.加速器的运行、改造与升级,首次用标准安装程序来安装串列加速器的加速管,改进了RBS/C系统,使得沟道扫描自动化能正常运行。
2.GaN薄膜用多种能量调制注入Co离子,钴原子均匀分布在GaN表面以下的200nm左右的注入层中,离子注入造成表面溅射和损伤,还导致晶体结构的变化。离子注入形成的损伤率在50%到70%左右,经过退火后,晶体结构得到了一定程度的恢复,850℃退火20分钟恢复了60%的损伤。退火的GaN:Co样品表现出室温下的铁磁性。
3.硅锗薄膜的大剂量铁离子注入形成硅铁化合物,空气气氛下的高温退火引起的氧化极其严重,会使得在注入层之上形成较厚的氧化层,铁原子和Ge原子都有往深处扩散的趋势。
4.Mn注入CdTe形成了CdTe:Mn,观测到阴极荧光峰随注入和退火条件的变化,为电滞回线提供了解释的依据。
This paper is intended to provide an introduction of our work about the accelerator lab which based on a GIC4117 tandem. A multifunction ion beam system has been established based on a tandem accelerator, which including low and high energy (10-30keV,50-200keV, and 500-5000keV) implantation, RBS, PIXE, ERD, and NRA, Channeling analysis.
The paper is divided into three parts. In the first part, an introduction of our work on the equipments which is concerned with accelerators is given, which including the following part:installation of negative ion implantation chamber, assembling of new 1.7MV accelerate tube, a computerized controlled Rutherford backscattering/channeling system's installment, which main components are a PC equipped with a multichannel analyzer data acquisition board, motion control hardware including the stepping motor controller and integrated circuit modules, and a LabVIEW programmed operating system with associated electronics.
The second part deals with the various kinds ion beam analysis techniques including the fundamentals and experimental technique. This part focus on the fundamental physics of the interaction between incident ions and individual atoms in the solid provides the underlying science for ion beam analysis, then, and gives some introduction about the experimental details such as the ion beam analysis instrumentation, the Computer Simulation Codes.
The third part covers the accelerator's applications, giving several examples of research on multiferroics films synthesized by ion implantation and analysis by RBS/Channeling. Several semiconductor films including CdS, GeSi, and GaN are implanted with metal ions. The structural and ferromagnetic properties are studied. The virgin GaN films have an excellent crystal quantity and in the implanted samples 60% disorder induced by ion implantation was recovered after annealing.
引文
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