低介电常数聚酰亚胺/纯硅沸石杂化膜的制备
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摘要
聚酰亚胺(polyimide, PI)因集多种优异性能于一体而被广泛应用于电子电气产业中。随着高性能超大规模集成电路的快速发展，电路中导线密度不断增加及器件尺寸不断减小对电介质提出了更高要求，要求相应电介质材料具有更低的介电常数。PI受制于其较高的本征介电常数，尚不能满足现代微电子产业的要求。因此，制备新一代兼具低介电常数和优异综合性能的PI材料成为近年来材料领域的一个研究重点。
本文合成了具有较低框架密度的MEL型纯硅沸石纳米晶(pure silica zeolitenanocrystal, PSZN)，并通过表面改性制备了PSZN的氨基衍生物(amino-derivative ofPSZN, A-PSZN)，通过溶液共混法将A-PSZN添加至具有不同主链结构的PI的前驱体PAA溶液中，经涂膜和静电纺丝后再热酰亚胺化处理制备了一系列PI/A-PSZN杂化膜，并对杂化材料各方面性能进行系统研究。
1.以正硅酸乙酯(TEOS)为硅源，四丁基氢氧化铵(TBAOH)为模板剂及碱源，经合成釜内水热静态晶化法制备了PSZN，并采用硅烷偶联剂3-氨丙基三乙氧基硅烷(KH550)在弱酸性条件下对PSZN进行表面改性制备A-PSZN。通过考察和优化PSZN合成过程中各个影响因素，确定了制备粒径分布均匀且形貌规整的PSZN的适宜条件为：将各组分摩尔比为1TEOS/0.3TBAOH/20H2O的合成液在室温下搅拌预水解24h后，在110°C下晶化24h。随着TBAOH/TEOS摩尔比降低，H2O/TEOS摩尔比增大，晶化温度升高，PSZN的粒径增大，分布变宽，颗粒出现团聚现象且外观形貌不规则。研究结果表明，KH550主要在PSZN的(101)晶面进行接枝反应。因此，该表面改性处理并未对样品的微观形貌、结晶度及微孔特性产生明显影响，PSZN和A-PSZN均为单分散的橄榄形颗粒，具有高结晶度及相似的微孔性质，KH550在PSZN表面的接枝率为3.10%。
2.分别将A-PSZN和PSZN通过溶液共混法添加至均苯四甲酸酐(PMDA)-4,4’-二氨基二苯醚(ODA)型PI的前驱体聚酰胺酸(PAA)中，经热酰亚胺化制备了PMDA-ODA型PI/A-PSZN杂化膜和PMDA-ODA型PI/PSZN复合膜。研究表明，A-PSZN可通过氨基与基体反应而均匀分散并形成交联结构，而PSZN因与基体相容性差而团聚，相比之下，杂化膜比复合膜具有更为优异的综合性能。当A-PSZN添加量为5wt%时，杂化膜在1MHz测试频率下的介电常数由基体的3.52降至3.11，同时材料的热性能、力学性能和表面性能得到提升。然而，当A-PSZN添加量超过5wt%后，由于过量的A-PSZN不能通过化学键与基体良好结合而团聚，导致材料综合性能反而下降。
3.在PI的主链中引入-CF3取代基降低基体的介电常数，同时通过添加A-PSZN进一步降低含氟PI介电常数并改善其较差的热性能和力学性能。以4,4’-六氟亚异丙基邻苯二甲酸酐(6FDA)、4,4’-二氨基二苯醚(ODA)和4,4’-二氨基-2,2’-双三氟甲基联苯(TFDB)为单体，将A-PSZN通过溶液共混法添加至含氟PI的前驱体中，经热酰亚胺化处理制备了6FDA-ODA型PI/A-PSZN和6FDA-TFDB型PI/A-PSZN两种杂化薄膜。研究表明，由于氨基不仅能够通过与主链链端的酸酐发生反应形成共价键作用，还可与取代基-CF3形成分子间氢键作用，因此A-PSZN在含氟PI中分散均匀。当A-PSZN添加量为7wt%时，6FDA-ODA型PI/A-PSZN和6FDA-TFDB型PI/A-PSZN杂化薄膜具有较低介电常数，在1MHz测试频率下两种杂化膜的介电常数分别为2.73和2.56；同时，6FDA-ODA型PI/7wt%A-PSZN杂化膜的储存模量(storage modulus)、玻璃化转变温度(glass transition tempera, Tg)和分解温度(decomposition temperature, Tdec)分别比基体提高了0.59GPa、14.7°C和2.6°C，而热膨胀系数(in-plane coefficient of thermal expansion, CTE)则降低了11.5μm/m°C，6FDA-TFDB型PI/7wt%A-PSZN杂化膜的杨氏模量和拉伸强度则分别比基体提高了0.88GPa和27.1MPa，而吸水率降至0.79%。
4.通过静电纺丝技术制备具有二维蜘蛛网状结构的PMDA-ODA型PI纤维膜和PMDA-ODA型PI/A-PSZN杂化纤维膜。研究结果表明，本工作中制备形貌规整的PI纤维的合适条件为：推进速度为0.5mL/h，环境温度为25°C，相对湿度为40%，PAA溶液固含量为15wt%，外加电压为15kV，接收距离为15cm；实验测得PMDA-ODA型PI纤维膜的孔隙率高达87.20%，经Maxwell-Garnett方程计算可知PMDA-ODA型PI纤维膜的理论介电常数仅为1.22，但由于其内部的多孔结构导致易吸水，在1MHz的测试频率下PMDA-ODA型PI纤维膜的实际介电常数为1.61；尽管添加A-PSZN并未对纤维膜的介电常数带来明显影响，但是有利于提高纤维膜的力学性能，PMDA-ODA型PI/7wt%A-PSZN杂化纤维膜的拉伸强度由原来的29.4MPa提高至41.3MPa。
Polyimide (PI) possesses remarkable thermal stability, mechanical strength, durability andsolvent resistance, and has been widely applied in the electrical and electronic industries. Withthe rapid development of ultra large scale integrated circuit (ULSIC), the increasing density ofwire and decreasing size of device in ULSIC make a requirement for the dielectric materialwith lower dielectric constant. Constrained by the higher intrinsic dielectric constant, PI stillcan not meet the requirement of modern microelectronic industry. Therefore, the preparationof a new generation of PI with low dielectric constant and excellent overall performances is aresearch focus in the field of materials in the recent year.
In this paper, MEL-type pure silica zeolite nanocrystal (PSZN) and amino-derivative ofPSZN (A-PSZN) were synthesized, and then the inorganic filler was introduced into PI matrixvia solution blending with PI-precursor (PAA) and subsequently thermal imidization toprepare a series of PI/A-PSZN hybrid films, and the performances of hybrid films werestudies in detailed.
1. PSZN was synthesized from tetraethyl orthosilicate (TEOS) by usingtetrabutylammonium hydroxide (TBAOH) as template and alkali via the static hydrothermalcrystallization and then was surface modified to prepare A-PSZN byγ-aminopropyltriethoxysilane coupling agent (KH550) in acid medium. By making effort tooptimize the experimental parameters of synthesizing PSZN, the suitable experimentalcondition to synthesize uniform PSZN with regular morphology was obtained and showed asfollow: the solution with a molar ratio of1TEOS/0.3TBAOH/20H2O was stirred for24h at25°C, after pre-hydrolization, the solution was transferred into a Teflon-lined autoclave andwas further heated at110°C for24h crystallization. Meanwhile, the studies show that KH550tend to graft onto the (101) crystal face of PSZN and the surface modification does not bringsignificant impact on the morphology, crystallinity and microporous properties of sample, theamount of KH550grafted onto the surface of PSZN is3.10%.
2. PSZN and A-PSZN were incorporated respectively into pyromellitic dianhydride(PMDA)-4,4’-diaminodiphenyl ether (ODA) type PI matrix to preparedPI(PMDA-ODA)/PSZN composite films and PI(PMDA-ODA)/A-PSZN hybrid films. The studies show that A-PSZN can be uniformly dispersed in the matrix with the aid of thereaction between amino group of A-PSZN and anhydride of PI and form the crosslinkedstructure within the hybrid, while PSZN tend to agglomerate due to the poor compatibilitybetween PSZN and PI, thus PI(PMDA-ODA)/A-PSZN hybrid film possesses more excellentoverall performances compared with PI(PMDA-ODA)/PSZN composite film; when theaddition of A-PSZN is5wt%, the dielectric constant (1MHz) of PI(PMDA-ODA)/A-PSZNhybrid film decreases from3.52of matrix to3.11, moreover, hybrid film possesses increasedthermal and mechanical properties, as well as improved hydrophobicity with respect to matrix;however，when excessive A-PSZN is added, agglomeration will occur, and therefore resultingin worse overall performance.
3. The dielectric constant of PI matrix can be reduced by incorporated–CF3into PImain-chain, and the addition of A-PSZN not only can reduce the dielectric constant offluorinated PI, but also can improved the poor thermal and mechanical properties offluorinated PI. Using2,2-bis-(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA),4,4’-diaminodiphenyl ether (ODA) and2,2’-bis(trifluoromethyl)-4,4’-diaminobiphen (TFDB)as monomer, the hybrid films of PI(6FDA-ODA)/A-PSZN and PI(6FDA-TFDB)/A-PSZNwere prepared through the solution blending of A-PSZN with precursor of fluorinated PI. Thestudies show that when the addition of A-PSZN is7wt%, the hybrid film ofPI(6FDA-ODA)/A-PSZN and PI(6FDA-TFDB)/A-PSZN have the lowest dielectric constant,are2.73and2.56(1MHz), respectively; on the other hand, storage modulus, glass transitiontempera(Tg) and decomposition temperature(Tdec) of PI(6FDA-ODA)/7wt%A-PSZN increase0.59GPa,14.7°C and2.6°C than that of matrix, respectively, while Young’s modulus andtensile strength of PI(6FDA-TFDB)/7wt%A-PSZN improves0.88GPa and27.1MPa thanthat of matrix, respectively.
4. PI(PMDA-ODA) fiber membrane and corresponding A-PSZN hybrid fiber membranewere fabricated by electrospinning technology. The studies show that the optimizedelectrospinning is carried out with the feeding rate of0.5mL/h at applied voltage of15kV atambient temperature of25°C and relative humidity of40%, while PAA concentration andcollective distance is set to be15wt%and15cm, respectively; since moisture absorptionfrom the internal porous structure, PI(PMDA-ODA) fiber membrane possesses a dielectric constant of1.61(1MHz), which is higher than the theoretical dielectric constant of1.22calculated by Maxwell-Garnett equation; although the addition of A-PSZN does not affect thedielectric constant, but improved the mechanical properties, tensile strength ofPI/7wt%A-PSZN hybrid fiber membrane is improve to41.3MPa from29.4MPa of matrix.
本文合成了具有较低框架密度的MEL型纯硅沸石纳米晶(pure silica zeolitenanocrystal, PSZN)，并通过表面改性制备了PSZN的氨基衍生物(amino-derivative ofPSZN, A-PSZN)，通过溶液共混法将A-PSZN添加至具有不同主链结构的PI的前驱体PAA溶液中，经涂膜和静电纺丝后再热酰亚胺化处理制备了一系列PI/A-PSZN杂化膜，并对杂化材料各方面性能进行系统研究。
1.以正硅酸乙酯(TEOS)为硅源，四丁基氢氧化铵(TBAOH)为模板剂及碱源，经合成釜内水热静态晶化法制备了PSZN，并采用硅烷偶联剂3-氨丙基三乙氧基硅烷(KH550)在弱酸性条件下对PSZN进行表面改性制备A-PSZN。通过考察和优化PSZN合成过程中各个影响因素，确定了制备粒径分布均匀且形貌规整的PSZN的适宜条件为：将各组分摩尔比为1TEOS/0.3TBAOH/20H2O的合成液在室温下搅拌预水解24h后，在110°C下晶化24h。随着TBAOH/TEOS摩尔比降低，H2O/TEOS摩尔比增大，晶化温度升高，PSZN的粒径增大，分布变宽，颗粒出现团聚现象且外观形貌不规则。研究结果表明，KH550主要在PSZN的(101)晶面进行接枝反应。因此，该表面改性处理并未对样品的微观形貌、结晶度及微孔特性产生明显影响，PSZN和A-PSZN均为单分散的橄榄形颗粒，具有高结晶度及相似的微孔性质，KH550在PSZN表面的接枝率为3.10%。
2.分别将A-PSZN和PSZN通过溶液共混法添加至均苯四甲酸酐(PMDA)-4,4’-二氨基二苯醚(ODA)型PI的前驱体聚酰胺酸(PAA)中，经热酰亚胺化制备了PMDA-ODA型PI/A-PSZN杂化膜和PMDA-ODA型PI/PSZN复合膜。研究表明，A-PSZN可通过氨基与基体反应而均匀分散并形成交联结构，而PSZN因与基体相容性差而团聚，相比之下，杂化膜比复合膜具有更为优异的综合性能。当A-PSZN添加量为5wt%时，杂化膜在1MHz测试频率下的介电常数由基体的3.52降至3.11，同时材料的热性能、力学性能和表面性能得到提升。然而，当A-PSZN添加量超过5wt%后，由于过量的A-PSZN不能通过化学键与基体良好结合而团聚，导致材料综合性能反而下降。
3.在PI的主链中引入-CF3取代基降低基体的介电常数，同时通过添加A-PSZN进一步降低含氟PI介电常数并改善其较差的热性能和力学性能。以4,4’-六氟亚异丙基邻苯二甲酸酐(6FDA)、4,4’-二氨基二苯醚(ODA)和4,4’-二氨基-2,2’-双三氟甲基联苯(TFDB)为单体，将A-PSZN通过溶液共混法添加至含氟PI的前驱体中，经热酰亚胺化处理制备了6FDA-ODA型PI/A-PSZN和6FDA-TFDB型PI/A-PSZN两种杂化薄膜。研究表明，由于氨基不仅能够通过与主链链端的酸酐发生反应形成共价键作用，还可与取代基-CF3形成分子间氢键作用，因此A-PSZN在含氟PI中分散均匀。当A-PSZN添加量为7wt%时，6FDA-ODA型PI/A-PSZN和6FDA-TFDB型PI/A-PSZN杂化薄膜具有较低介电常数，在1MHz测试频率下两种杂化膜的介电常数分别为2.73和2.56；同时，6FDA-ODA型PI/7wt%A-PSZN杂化膜的储存模量(storage modulus)、玻璃化转变温度(glass transition tempera, Tg)和分解温度(decomposition temperature, Tdec)分别比基体提高了0.59GPa、14.7°C和2.6°C，而热膨胀系数(in-plane coefficient of thermal expansion, CTE)则降低了11.5μm/m°C，6FDA-TFDB型PI/7wt%A-PSZN杂化膜的杨氏模量和拉伸强度则分别比基体提高了0.88GPa和27.1MPa，而吸水率降至0.79%。
4.通过静电纺丝技术制备具有二维蜘蛛网状结构的PMDA-ODA型PI纤维膜和PMDA-ODA型PI/A-PSZN杂化纤维膜。研究结果表明，本工作中制备形貌规整的PI纤维的合适条件为：推进速度为0.5mL/h，环境温度为25°C，相对湿度为40%，PAA溶液固含量为15wt%，外加电压为15kV，接收距离为15cm；实验测得PMDA-ODA型PI纤维膜的孔隙率高达87.20%，经Maxwell-Garnett方程计算可知PMDA-ODA型PI纤维膜的理论介电常数仅为1.22，但由于其内部的多孔结构导致易吸水，在1MHz的测试频率下PMDA-ODA型PI纤维膜的实际介电常数为1.61；尽管添加A-PSZN并未对纤维膜的介电常数带来明显影响，但是有利于提高纤维膜的力学性能，PMDA-ODA型PI/7wt%A-PSZN杂化纤维膜的拉伸强度由原来的29.4MPa提高至41.3MPa。
Polyimide (PI) possesses remarkable thermal stability, mechanical strength, durability andsolvent resistance, and has been widely applied in the electrical and electronic industries. Withthe rapid development of ultra large scale integrated circuit (ULSIC), the increasing density ofwire and decreasing size of device in ULSIC make a requirement for the dielectric materialwith lower dielectric constant. Constrained by the higher intrinsic dielectric constant, PI stillcan not meet the requirement of modern microelectronic industry. Therefore, the preparationof a new generation of PI with low dielectric constant and excellent overall performances is aresearch focus in the field of materials in the recent year.
In this paper, MEL-type pure silica zeolite nanocrystal (PSZN) and amino-derivative ofPSZN (A-PSZN) were synthesized, and then the inorganic filler was introduced into PI matrixvia solution blending with PI-precursor (PAA) and subsequently thermal imidization toprepare a series of PI/A-PSZN hybrid films, and the performances of hybrid films werestudies in detailed.
1. PSZN was synthesized from tetraethyl orthosilicate (TEOS) by usingtetrabutylammonium hydroxide (TBAOH) as template and alkali via the static hydrothermalcrystallization and then was surface modified to prepare A-PSZN byγ-aminopropyltriethoxysilane coupling agent (KH550) in acid medium. By making effort tooptimize the experimental parameters of synthesizing PSZN, the suitable experimentalcondition to synthesize uniform PSZN with regular morphology was obtained and showed asfollow: the solution with a molar ratio of1TEOS/0.3TBAOH/20H2O was stirred for24h at25°C, after pre-hydrolization, the solution was transferred into a Teflon-lined autoclave andwas further heated at110°C for24h crystallization. Meanwhile, the studies show that KH550tend to graft onto the (101) crystal face of PSZN and the surface modification does not bringsignificant impact on the morphology, crystallinity and microporous properties of sample, theamount of KH550grafted onto the surface of PSZN is3.10%.
2. PSZN and A-PSZN were incorporated respectively into pyromellitic dianhydride(PMDA)-4,4’-diaminodiphenyl ether (ODA) type PI matrix to preparedPI(PMDA-ODA)/PSZN composite films and PI(PMDA-ODA)/A-PSZN hybrid films. The studies show that A-PSZN can be uniformly dispersed in the matrix with the aid of thereaction between amino group of A-PSZN and anhydride of PI and form the crosslinkedstructure within the hybrid, while PSZN tend to agglomerate due to the poor compatibilitybetween PSZN and PI, thus PI(PMDA-ODA)/A-PSZN hybrid film possesses more excellentoverall performances compared with PI(PMDA-ODA)/PSZN composite film; when theaddition of A-PSZN is5wt%, the dielectric constant (1MHz) of PI(PMDA-ODA)/A-PSZNhybrid film decreases from3.52of matrix to3.11, moreover, hybrid film possesses increasedthermal and mechanical properties, as well as improved hydrophobicity with respect to matrix;however，when excessive A-PSZN is added, agglomeration will occur, and therefore resultingin worse overall performance.
3. The dielectric constant of PI matrix can be reduced by incorporated–CF3into PImain-chain, and the addition of A-PSZN not only can reduce the dielectric constant offluorinated PI, but also can improved the poor thermal and mechanical properties offluorinated PI. Using2,2-bis-(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA),4,4’-diaminodiphenyl ether (ODA) and2,2’-bis(trifluoromethyl)-4,4’-diaminobiphen (TFDB)as monomer, the hybrid films of PI(6FDA-ODA)/A-PSZN and PI(6FDA-TFDB)/A-PSZNwere prepared through the solution blending of A-PSZN with precursor of fluorinated PI. Thestudies show that when the addition of A-PSZN is7wt%, the hybrid film ofPI(6FDA-ODA)/A-PSZN and PI(6FDA-TFDB)/A-PSZN have the lowest dielectric constant,are2.73and2.56(1MHz), respectively; on the other hand, storage modulus, glass transitiontempera(Tg) and decomposition temperature(Tdec) of PI(6FDA-ODA)/7wt%A-PSZN increase0.59GPa,14.7°C and2.6°C than that of matrix, respectively, while Young’s modulus andtensile strength of PI(6FDA-TFDB)/7wt%A-PSZN improves0.88GPa and27.1MPa thanthat of matrix, respectively.
4. PI(PMDA-ODA) fiber membrane and corresponding A-PSZN hybrid fiber membranewere fabricated by electrospinning technology. The studies show that the optimizedelectrospinning is carried out with the feeding rate of0.5mL/h at applied voltage of15kV atambient temperature of25°C and relative humidity of40%, while PAA concentration andcollective distance is set to be15wt%and15cm, respectively; since moisture absorptionfrom the internal porous structure, PI(PMDA-ODA) fiber membrane possesses a dielectric constant of1.61(1MHz), which is higher than the theoretical dielectric constant of1.22calculated by Maxwell-Garnett equation; although the addition of A-PSZN does not affect thedielectric constant, but improved the mechanical properties, tensile strength ofPI/7wt%A-PSZN hybrid fiber membrane is improve to41.3MPa from29.4MPa of matrix.
引文
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