电镀金刚石线锯切割单晶硅技术及机理研究
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摘要
目前,半导体材料广泛地应用于各种微电子领域,如计算机系统、电子通讯设备、汽车、消费电子系统和工业自动控制系统等,而绝大多数的半导体材料是采用硅晶片。切片是把单晶硅由硅棒变成硅片的一个重要工序,切片质量的好坏直接影响着后续工序的工作量和成本。固结磨料线锯切片技术以其锯切效率高、锯口损耗小、面形精度高和切割环境清洁等优点,有望成为单晶硅等硬脆材料切片的未来发展方向。本文对电镀金刚石线锯切割单晶硅技术进行了深入的试验研究与理论分析,以期为电镀金刚石线锯切片技术的进一步应用提供试验和理论依据。
在理论上探讨了单晶硅各向异性材料特性对电镀金刚石线锯切割硅晶片过程影响。分析了锯丝沿不同的晶面、晶向锯切对晶片质量的影响规律,并推荐了首选的锯丝切入方向。研究发现,在确定的工艺参数下,当锯丝切入方向使锯切两边材料的弹性模量分布关于锯丝切入方向呈对称性时,可有效地提高晶片面形质量。锯丝切入方向与被锯切晶面内的易开裂方向一致时,可有效减少晶片表面破碎。综合锯丝切入方向对晶片面形质量和表面破碎两方面影响的分析结果,锯切(100)晶面时,首选锯丝切入方向为[001]、[010]、[00(?)]和[0(?)0];锯切(110)晶面时,首选锯丝切入方向为[1(?)0]和[(?)10];锯切(111)晶面,[1(?)0],[(?)10],[01(?)],[0(?)1],[(?)01]和[10(?)]为首选的锯丝切入方向。
通过往复式电镀金刚石线锯加工单晶硅的试验,研究了锯丝速度,工件进给速度和切削液对锯切硅片表面形貌、表面粗糙度(SR)、翘曲度(Warp)、总厚度偏差(TTV)和亚表面损伤层厚度(SSD)的影响规律,并研究了锯丝磨损的形态和机理。在试验采用的工艺参数范围内,硅片的SR与SSD值随锯丝速度提高和工件进给速度降低而减小;硅片的Warp随锯丝速度和工件进给速度降低而减小;而综合考虑锯丝速度与进给速度的合理匹配关系是获得硅片低TTV值的原则。锯切试验中使用合成液做切削液改善晶片表面形貌,降低硅片的表面粗糙度、翘曲度和TTV的综合效果最好。研究发现电镀金刚石锯丝的磨损形式分为镀层磨损与磨粒磨损,主要磨损形式为磨粒的脱落,因此锯丝制造过程中应研究新措施来提高磨粒的把持力,从而提高锯丝的寿命。
建立了锯丝表面周向分布的磨粒在锯切过程中的平均切削厚度理论模型,并结合观察加工表面形貌和切屑形态,研究了电镀金刚石线锯加工单晶硅的材料去除和加工表面形成机理,分析了加工表面材料去除方式与工艺参数的关系。锯丝表面周向分布的磨粒切深与磨粒所在的位置有关,位于锯丝底部的磨粒切深大,主要贡献于材料的去除,形成锯口,实现切片;而分布于靠近加工表面的磨粒切深小,主要贡献于晶片表面的形成。当使用同一种锯丝进行单晶硅的加工时,锯丝表面某一位置处的磨粒平均切削深度g和工件进给速度V_W与锯丝速度V_S的比值q之间存在着近似的非线性的单调递增关系,为g∝D·(V_W/V_S)~(4/9),其中D为常数。硅片表面的材料去除方式与q值相关,在本文的试验条件下,当q≤1.0μm/mm时,硅片表面的材料去除可实现准塑性域去除方式。
建立了锯切硅片亚表面损伤层厚度预测的理论模型。该模型把线锯加工中磨粒的切削过程近似为受法向力与切向力共同作用的压头移动过程,综合考虑磨粒下方弹性应力场与残余应力场对中位裂纹扩展长度的影响。把中位裂纹扩展层深度看成是亚表层损伤层厚度,把磨粒下方横向裂纹产生深度看成是锯切后表面p-v粗糙度值,从而建立了亚表层损伤层厚度与表面粗糙度值之间的理论模型,用于预测损伤层厚度。锯切硅片的SSD值与加工表面的粗糙度值SR(R_z)之间存在非线性的单调递增的关系,即SSD—SR+χSR~(3/4)。采用此理论模型预测的SSD厚度值与试验测量值误差在12.78%内,说明理论预测结果与试验检测结果较为吻合,利用建立的理论模型能够快速、简便和准确预测线锯加工单晶硅的亚表面损伤层厚度。
高性能的固结磨料金刚石锯丝的研制是线锯技术发展应用的关键,因此对电镀金刚石锯丝制造技术进行了初步的试验研究,研究及优化了电镀金刚石锯丝的制作工艺与电镀参数。试验选取φ200μm的琴钢丝为基体和平均磨粒粒度为20μm的金刚石磨粒制作锯丝。通过分析锯丝制作过程中镀底层、上砂等过程的电流密度与上砂时间对锯丝的外观质量、锯丝表面金刚石磨粒密度和镀层与基体间结合力的影响规律,得到了制作电镀金刚石锯丝的最佳工艺参数。上砂过程采用埋砂法,制作质量良好的电镀金刚石锯丝的最佳工艺参数为:电镀液温度为35～40℃,PH值为3.8～4.2,对应各阶段的电流密度分别为1.8、1.5和2.0A/dm~2,其镀底层、上砂与加厚镀的时间依次为6、8和18min。电镀后的锯丝在200℃环境内保温一小时进行除氢处理。试制锯丝直径为250μm,提高了加工材料的利用率。
Nowadays,semiconductors are widely used in microelectronic applications,such as computer systems,automobiles,industrial automation,telecommunications equipment,consumer electronics and industry control systems.The majority of semiconductors are built on silicon wafers.Wafer slicing process is a key technology to machine the silicon rod to wafer,and the machining quality of wafer can directly affect the workloads and costs of next working procedures.The fixed-abrasive diamond wire saw machining technology,which has some advantages of high machining efficiency, low kerf loss,clean working environment and high wafer surface quality for slicing,is supposed to be used for slicing silicon crystal widely in the future.The electroplated diamond wire saw(EDWS) machining single crystal silicon technology was studied by experimental and theoretical analysis in this paper,in order to supply the experimental and theoretical basis for further application of EDWS machining technology.
The effects of single crystal silicon anisotropy on the wafer quality sliced by EDWS were studied theoretically.Then the recommendatory wire approach directions (WAD) were made by analyzing the influences of machining single crystal silicon along different crystal planes and orientations on wafer quality.The study results show that the wafer can get a better surface finish and reduce deviation from the desired surface normal by maintaining symmetry of the elastic modulus of silicon on the two sides of the wire.And the tendency of wafer breakage can be reduced by maintaining the same of the WAD and a cleavage direction in crystal planes.Synthesizing the research results of the effects of WADs on wafer surface shape quality and wafer breakage,when slicing (100) crystals,the preferred WAD are[001],[010],[001]and[010];when slicing (110) crystals,the preferred WADs are[110]and[110];And there are exactly preferred six WADs for slicing(111) crystals:[1(?)0],[(?)10],[01(?)],[0(?)1],[(?)01] and[10T].
Through the reciprocating electroplated diamond wire saw slicing single crystal silicon experiments,the influences of wire saw speeds,ingot feed speeds and cutting fluids on the silicon wafers surface topography,surface roughness(SR),warp,total thickness variation(TTV) and subsurface damage(SSD) depth were studied,and the wear forms and wear mechanism of wire saw were studies.In the range of the experimental parameters adopted in this paper,the SR and SSD values of silicon wafers decrease along with the increase of wire saw speed and the decrease of feed speed;the wafers warp values decrease along with the decrease of wire saw speed and feed speed; and the wafer TTV values are closely related with the matching relations between wire saw speed and ingot feed speed.The experimental results show that the synthetic cutting fluid has a good effect to reduce the silicon wafer surface roughness,warp and TTV,and get a better wafer surface.The wear forms of EDWS include grain-abrasion and coating wear,which was observed by using the SEM.But the pulled-out of grits is the main wear form,therefore,the new approaches should be studied to improve the grits retaining strength,which can improve the service life of wire saws.
Ignoring the lateral vibration of the wire,the geometrical model of wire saw machining process was founded to calculate the average cut depth of single grit on wire surface theoretically.Based on the geometrical mode and experimental observation of the machined surface topography and chip shapes,the material removal mechanism and wafer surface formation were studied.And the relationship between the material removal mode and process parameters was analyzed.The study results show that the single grit cut depth has a close relation with the grit position on the wire surface.The grits on the bottom of wire saw have deeper cut depths,contributing to main material removal to form the kerf;the grits near to silicon machined surface have lower cut depths,mainly contributing to wafer surface formation.When using the same wire to machining the single crystal silicon,the cut depth of any grit on wire surface has a monotone increasing non-linear correlation with the ratio r value of ingot feed speed and wire speed,is g∝D·(V_W/V_S)~(4/9),and D is an invariable value.The material removal mode can be changed through controlling and adjusting the r value.According to the experimental condition in this paper,when r≤1.0μm/mm,the material removal on wafer surface can be in a near-ductile removal mode.
A theoretical model for predicting the silicon wafer SSD depth was founded.This model considered the abrasives machining in wire sawing process as a moving indention subjected to both normal force and tangential force.Based on indentation fracture mechanics theory,the propagation length of median crack was analyzed by synthetically considering the contributions of elastic stress field and residual stress field beneath the abrasive.Then the depth of median crack propagation layer was postulated as equal as the subsurface damage layer thickness(SSD),and the lateral crack depth was equal to the peak-to-valley surface roughness(SR),thereby a theoretical model of relationship between SSD and SR was founded for predicting the SSD depth.There exists monotone increasing non-linear correlation between SSD depth and SR(R_z) in wire saw slicing single crystal silicon process,that is,SSD - SR+χSR~(3/4).The results indicate that the errors between the experimental measure values and the theoretical prediction values are less than 12.78%,which shows the experimental measure and theoretical prediction values coinciding comparatively.So the theoretical model can be used for predicting SSD rapidly,expediently and accurately.
The high performance diamond impregnated wire manufacture is the key of application for this technology,so the development of electroplated diamond wire was investigated briefly.The development process and electroplating parameters were studied and optimized.The piano wire with a 0.2mm diameter was selected as the saw matrix and the diamond grits with a 20um average size was selected to develop the EDWS.Some experimental studies were done to analyze the effects of cathode current density of pre-plating and electro-embedding of diamond grits(tack-on) and time at tack-on stage on the wire saw appearance,diamond grits density and adhesion between saw matrix and plating coating,then the optimum electroplating parameters for developing EDWS were obtained.Electro-embedding of diamond grits on the wire saw surface used the inter-sand method.And the optimum process parameters are as following:the temperature of the plating bath is 35～40℃,and the pH value is 3.8～4.2. The cathode current densities of pre-plating,tack-on and buildup process are 1.8,1.5 and 2.0A/dm~2 in turn,and the corresponding times at various stages are 6,8 and 18min. The wire saw is heat-treated for 1 hour at 200℃to remove hydrogen at last.The diameter of wire saw developed is about 0.25mm,which will increase the utilization rate of materials.
在理论上探讨了单晶硅各向异性材料特性对电镀金刚石线锯切割硅晶片过程影响。分析了锯丝沿不同的晶面、晶向锯切对晶片质量的影响规律,并推荐了首选的锯丝切入方向。研究发现,在确定的工艺参数下,当锯丝切入方向使锯切两边材料的弹性模量分布关于锯丝切入方向呈对称性时,可有效地提高晶片面形质量。锯丝切入方向与被锯切晶面内的易开裂方向一致时,可有效减少晶片表面破碎。综合锯丝切入方向对晶片面形质量和表面破碎两方面影响的分析结果,锯切(100)晶面时,首选锯丝切入方向为[001]、[010]、[00(?)]和[0(?)0];锯切(110)晶面时,首选锯丝切入方向为[1(?)0]和[(?)10];锯切(111)晶面,[1(?)0],[(?)10],[01(?)],[0(?)1],[(?)01]和[10(?)]为首选的锯丝切入方向。
通过往复式电镀金刚石线锯加工单晶硅的试验,研究了锯丝速度,工件进给速度和切削液对锯切硅片表面形貌、表面粗糙度(SR)、翘曲度(Warp)、总厚度偏差(TTV)和亚表面损伤层厚度(SSD)的影响规律,并研究了锯丝磨损的形态和机理。在试验采用的工艺参数范围内,硅片的SR与SSD值随锯丝速度提高和工件进给速度降低而减小;硅片的Warp随锯丝速度和工件进给速度降低而减小;而综合考虑锯丝速度与进给速度的合理匹配关系是获得硅片低TTV值的原则。锯切试验中使用合成液做切削液改善晶片表面形貌,降低硅片的表面粗糙度、翘曲度和TTV的综合效果最好。研究发现电镀金刚石锯丝的磨损形式分为镀层磨损与磨粒磨损,主要磨损形式为磨粒的脱落,因此锯丝制造过程中应研究新措施来提高磨粒的把持力,从而提高锯丝的寿命。
建立了锯丝表面周向分布的磨粒在锯切过程中的平均切削厚度理论模型,并结合观察加工表面形貌和切屑形态,研究了电镀金刚石线锯加工单晶硅的材料去除和加工表面形成机理,分析了加工表面材料去除方式与工艺参数的关系。锯丝表面周向分布的磨粒切深与磨粒所在的位置有关,位于锯丝底部的磨粒切深大,主要贡献于材料的去除,形成锯口,实现切片;而分布于靠近加工表面的磨粒切深小,主要贡献于晶片表面的形成。当使用同一种锯丝进行单晶硅的加工时,锯丝表面某一位置处的磨粒平均切削深度g和工件进给速度V_W与锯丝速度V_S的比值q之间存在着近似的非线性的单调递增关系,为g∝D·(V_W/V_S)~(4/9),其中D为常数。硅片表面的材料去除方式与q值相关,在本文的试验条件下,当q≤1.0μm/mm时,硅片表面的材料去除可实现准塑性域去除方式。
建立了锯切硅片亚表面损伤层厚度预测的理论模型。该模型把线锯加工中磨粒的切削过程近似为受法向力与切向力共同作用的压头移动过程,综合考虑磨粒下方弹性应力场与残余应力场对中位裂纹扩展长度的影响。把中位裂纹扩展层深度看成是亚表层损伤层厚度,把磨粒下方横向裂纹产生深度看成是锯切后表面p-v粗糙度值,从而建立了亚表层损伤层厚度与表面粗糙度值之间的理论模型,用于预测损伤层厚度。锯切硅片的SSD值与加工表面的粗糙度值SR(R_z)之间存在非线性的单调递增的关系,即SSD—SR+χSR~(3/4)。采用此理论模型预测的SSD厚度值与试验测量值误差在12.78%内,说明理论预测结果与试验检测结果较为吻合,利用建立的理论模型能够快速、简便和准确预测线锯加工单晶硅的亚表面损伤层厚度。
高性能的固结磨料金刚石锯丝的研制是线锯技术发展应用的关键,因此对电镀金刚石锯丝制造技术进行了初步的试验研究,研究及优化了电镀金刚石锯丝的制作工艺与电镀参数。试验选取φ200μm的琴钢丝为基体和平均磨粒粒度为20μm的金刚石磨粒制作锯丝。通过分析锯丝制作过程中镀底层、上砂等过程的电流密度与上砂时间对锯丝的外观质量、锯丝表面金刚石磨粒密度和镀层与基体间结合力的影响规律,得到了制作电镀金刚石锯丝的最佳工艺参数。上砂过程采用埋砂法,制作质量良好的电镀金刚石锯丝的最佳工艺参数为:电镀液温度为35～40℃,PH值为3.8～4.2,对应各阶段的电流密度分别为1.8、1.5和2.0A/dm~2,其镀底层、上砂与加厚镀的时间依次为6、8和18min。电镀后的锯丝在200℃环境内保温一小时进行除氢处理。试制锯丝直径为250μm,提高了加工材料的利用率。
Nowadays,semiconductors are widely used in microelectronic applications,such as computer systems,automobiles,industrial automation,telecommunications equipment,consumer electronics and industry control systems.The majority of semiconductors are built on silicon wafers.Wafer slicing process is a key technology to machine the silicon rod to wafer,and the machining quality of wafer can directly affect the workloads and costs of next working procedures.The fixed-abrasive diamond wire saw machining technology,which has some advantages of high machining efficiency, low kerf loss,clean working environment and high wafer surface quality for slicing,is supposed to be used for slicing silicon crystal widely in the future.The electroplated diamond wire saw(EDWS) machining single crystal silicon technology was studied by experimental and theoretical analysis in this paper,in order to supply the experimental and theoretical basis for further application of EDWS machining technology.
The effects of single crystal silicon anisotropy on the wafer quality sliced by EDWS were studied theoretically.Then the recommendatory wire approach directions (WAD) were made by analyzing the influences of machining single crystal silicon along different crystal planes and orientations on wafer quality.The study results show that the wafer can get a better surface finish and reduce deviation from the desired surface normal by maintaining symmetry of the elastic modulus of silicon on the two sides of the wire.And the tendency of wafer breakage can be reduced by maintaining the same of the WAD and a cleavage direction in crystal planes.Synthesizing the research results of the effects of WADs on wafer surface shape quality and wafer breakage,when slicing (100) crystals,the preferred WAD are[001],[010],[001]and[010];when slicing (110) crystals,the preferred WADs are[110]and[110];And there are exactly preferred six WADs for slicing(111) crystals:[1(?)0],[(?)10],[01(?)],[0(?)1],[(?)01] and[10T].
Through the reciprocating electroplated diamond wire saw slicing single crystal silicon experiments,the influences of wire saw speeds,ingot feed speeds and cutting fluids on the silicon wafers surface topography,surface roughness(SR),warp,total thickness variation(TTV) and subsurface damage(SSD) depth were studied,and the wear forms and wear mechanism of wire saw were studies.In the range of the experimental parameters adopted in this paper,the SR and SSD values of silicon wafers decrease along with the increase of wire saw speed and the decrease of feed speed;the wafers warp values decrease along with the decrease of wire saw speed and feed speed; and the wafer TTV values are closely related with the matching relations between wire saw speed and ingot feed speed.The experimental results show that the synthetic cutting fluid has a good effect to reduce the silicon wafer surface roughness,warp and TTV,and get a better wafer surface.The wear forms of EDWS include grain-abrasion and coating wear,which was observed by using the SEM.But the pulled-out of grits is the main wear form,therefore,the new approaches should be studied to improve the grits retaining strength,which can improve the service life of wire saws.
Ignoring the lateral vibration of the wire,the geometrical model of wire saw machining process was founded to calculate the average cut depth of single grit on wire surface theoretically.Based on the geometrical mode and experimental observation of the machined surface topography and chip shapes,the material removal mechanism and wafer surface formation were studied.And the relationship between the material removal mode and process parameters was analyzed.The study results show that the single grit cut depth has a close relation with the grit position on the wire surface.The grits on the bottom of wire saw have deeper cut depths,contributing to main material removal to form the kerf;the grits near to silicon machined surface have lower cut depths,mainly contributing to wafer surface formation.When using the same wire to machining the single crystal silicon,the cut depth of any grit on wire surface has a monotone increasing non-linear correlation with the ratio r value of ingot feed speed and wire speed,is g∝D·(V_W/V_S)~(4/9),and D is an invariable value.The material removal mode can be changed through controlling and adjusting the r value.According to the experimental condition in this paper,when r≤1.0μm/mm,the material removal on wafer surface can be in a near-ductile removal mode.
A theoretical model for predicting the silicon wafer SSD depth was founded.This model considered the abrasives machining in wire sawing process as a moving indention subjected to both normal force and tangential force.Based on indentation fracture mechanics theory,the propagation length of median crack was analyzed by synthetically considering the contributions of elastic stress field and residual stress field beneath the abrasive.Then the depth of median crack propagation layer was postulated as equal as the subsurface damage layer thickness(SSD),and the lateral crack depth was equal to the peak-to-valley surface roughness(SR),thereby a theoretical model of relationship between SSD and SR was founded for predicting the SSD depth.There exists monotone increasing non-linear correlation between SSD depth and SR(R_z) in wire saw slicing single crystal silicon process,that is,SSD - SR+χSR~(3/4).The results indicate that the errors between the experimental measure values and the theoretical prediction values are less than 12.78%,which shows the experimental measure and theoretical prediction values coinciding comparatively.So the theoretical model can be used for predicting SSD rapidly,expediently and accurately.
The high performance diamond impregnated wire manufacture is the key of application for this technology,so the development of electroplated diamond wire was investigated briefly.The development process and electroplating parameters were studied and optimized.The piano wire with a 0.2mm diameter was selected as the saw matrix and the diamond grits with a 20um average size was selected to develop the EDWS.Some experimental studies were done to analyze the effects of cathode current density of pre-plating and electro-embedding of diamond grits(tack-on) and time at tack-on stage on the wire saw appearance,diamond grits density and adhesion between saw matrix and plating coating,then the optimum electroplating parameters for developing EDWS were obtained.Electro-embedding of diamond grits on the wire saw surface used the inter-sand method.And the optimum process parameters are as following:the temperature of the plating bath is 35～40℃,and the pH value is 3.8～4.2. The cathode current densities of pre-plating,tack-on and buildup process are 1.8,1.5 and 2.0A/dm~2 in turn,and the corresponding times at various stages are 6,8 and 18min. The wire saw is heat-treated for 1 hour at 200℃to remove hydrogen at last.The diameter of wire saw developed is about 0.25mm,which will increase the utilization rate of materials.
引文
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