利用纳米压印技术构筑图案化微纳结构
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摘要
大规模集成电路技术的进一步发展需要开发新一代的刻蚀技术,但传统的光刻技术即将接近其技术极限,因此研究和开发高分辨率加工能力的纳米加工技术迫在眉睫。纳米压印技术是华裔科学家美国普林斯顿大学周郁在1995年首先提出的,目前,这项技术最先进的程度已达到5 nm以下的水平。纳米压印技术的显著优点是速度快、环节少、成本低,被认为是下一代微纳结构刻蚀技术之一。本文首先探究了纳米压印技术的条件;然后利用在荷叶表面沉积镀膜的方法制备得到压印模板从而进行压印;同时利用聚二甲基硅氧烷的特殊性质复制图案化的表面结构制备软模板,并进行了压印研究。本文主要分为以下几个部分:
在第二章中,我们制备了聚苯乙烯(PS)并对其进行了表征;利用原子力测量在不同的旋涂速度下聚苯乙烯和聚甲基丙烯酸甲酯(PMMA)阻挡层的厚度及表面形貌。
在第三章中,我们利用SEM观察荷叶表面的结构;用接触角测量仪研究其疏水性质;通过实验发现荷叶不适宜直接作为压印模板,于是我们利用离子束溅射的方法在荷叶的表面沉积无机膜(铜、硅等)增加荷叶微纳结构的强度,由于镀膜后仍保留了荷叶原来的微突结构,所以膜的表面仍然具有疏水性质,适合作为压印模板使用;最后进行了压印研究。
在第四章中,我们通过复制原始模板(光盘、光栅结构等)的图案化表面结构和生物表面结构制备聚二甲基硅氧烷(PDMS)压印模板;对利用旋涂的方法在硅片及其他基底上旋涂成膜的氧化锌纳米溶胶进行压印,从而得到构筑图案化微纳结构氧化锌薄膜。该方法同样适合其他具有规则结构表面的复制和转印,扩展了纳米压印的应用领域。
Further development of the large-scale integrated circuit technology needs to develop a new generation of lithography technology, however, the traditional lithography technologies approach their limits. Therefore, The development of new nanoprocessing technology with high-resolution processing capacity is imminent. Nanoimprint Lithography was firstly proposed in 1995 by professor Chou of Princeton University. Currently, the most advanced technology of nanoimprint has reached the level of below 5 nm. The significant advantages of nanoimprint technology are fast speed, easy operation and low cost, and it is considered the next generation of micro-nano structure processing technology for semiconductor industry. This thesis explores the experimental parameters for nanoimprint technology, then soft template of polydimethylsiloxane (PDMS) was used as nanoimprint stamp. This thesis is divided into the following sections:
In Chapter 2, we prepared polystyrene films as resist labyers and measured the thickness of the films using Scanning Probe Microscope (SPM). The imprint results were analyzed by the control of the imprint pressure, temperature and time.
In Chapter 3, the surface structure of lotus leaves were analyzed by scanning electron microscope, and the hydrophobic nature of lotus leaves were confirmed using contact angle measuring device. It found that lotus leaves was unfit for using as imprint template directly. So we enhanced the intensity of the micro-nano structure by depositing inorganic film on lotus leaves using ion beam sputtering technology. The surface of films also possessed hydrophobic property because of the existence of micro-nano structure after depositing inorganic films. So it was suitable to use as nanoimprint template. Finally, imprint experiments were performed and the effects of different imprint conditions were analyzed.
In Chapter 4, we duplicated the surface structure of different samples to prepare polydimethylsiloxane soft templates. Finally we construct the patterning micro-nano structure on ZnO sol and other substrates using PDMS as imprint stamps.
在第二章中,我们制备了聚苯乙烯(PS)并对其进行了表征;利用原子力测量在不同的旋涂速度下聚苯乙烯和聚甲基丙烯酸甲酯(PMMA)阻挡层的厚度及表面形貌。
在第三章中,我们利用SEM观察荷叶表面的结构;用接触角测量仪研究其疏水性质;通过实验发现荷叶不适宜直接作为压印模板,于是我们利用离子束溅射的方法在荷叶的表面沉积无机膜(铜、硅等)增加荷叶微纳结构的强度,由于镀膜后仍保留了荷叶原来的微突结构,所以膜的表面仍然具有疏水性质,适合作为压印模板使用;最后进行了压印研究。
在第四章中,我们通过复制原始模板(光盘、光栅结构等)的图案化表面结构和生物表面结构制备聚二甲基硅氧烷(PDMS)压印模板;对利用旋涂的方法在硅片及其他基底上旋涂成膜的氧化锌纳米溶胶进行压印,从而得到构筑图案化微纳结构氧化锌薄膜。该方法同样适合其他具有规则结构表面的复制和转印,扩展了纳米压印的应用领域。
Further development of the large-scale integrated circuit technology needs to develop a new generation of lithography technology, however, the traditional lithography technologies approach their limits. Therefore, The development of new nanoprocessing technology with high-resolution processing capacity is imminent. Nanoimprint Lithography was firstly proposed in 1995 by professor Chou of Princeton University. Currently, the most advanced technology of nanoimprint has reached the level of below 5 nm. The significant advantages of nanoimprint technology are fast speed, easy operation and low cost, and it is considered the next generation of micro-nano structure processing technology for semiconductor industry. This thesis explores the experimental parameters for nanoimprint technology, then soft template of polydimethylsiloxane (PDMS) was used as nanoimprint stamp. This thesis is divided into the following sections:
In Chapter 2, we prepared polystyrene films as resist labyers and measured the thickness of the films using Scanning Probe Microscope (SPM). The imprint results were analyzed by the control of the imprint pressure, temperature and time.
In Chapter 3, the surface structure of lotus leaves were analyzed by scanning electron microscope, and the hydrophobic nature of lotus leaves were confirmed using contact angle measuring device. It found that lotus leaves was unfit for using as imprint template directly. So we enhanced the intensity of the micro-nano structure by depositing inorganic film on lotus leaves using ion beam sputtering technology. The surface of films also possessed hydrophobic property because of the existence of micro-nano structure after depositing inorganic films. So it was suitable to use as nanoimprint template. Finally, imprint experiments were performed and the effects of different imprint conditions were analyzed.
In Chapter 4, we duplicated the surface structure of different samples to prepare polydimethylsiloxane soft templates. Finally we construct the patterning micro-nano structure on ZnO sol and other substrates using PDMS as imprint stamps.
引文
[1]张立德,纳米材料,化学工业出版社,2000
[2]白春礼,纳米科技及其发展前沿,2001,在国际华人纳米科技会上的报告
[3]黄昆,郑厚植等,中国科学院院士建议,2001,4(总84)
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[5] Ronald, P.A., Toimas, B., Matt, D., et al Science 1998, 272, 1323
[6] Christoph,W., Hans,K., Siegfried, S. IEEE Trans. On Electron. Devices, 1998, 45, 365
[7] Bumm, L.A., Arnold, J.J., Cygan, M.T. et al Science 1996, 271, 17D5
[8] Maa, C.D, Sun, W.Q., Shen, Z.Y., et al Nature 1999, 397, 144
[9] De Benedett V.M.Cx, Higlia, N.,Sismondi, P., et al Int. J. Biol. Markeris, 2000, 1
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[17] Zisman W A. Adhension and cohesion [M]. edited by Weiss P. New York: Elsevier, 1962. 183
[18] Shafrin E G, Zisman W A. J Phys Chem, 1960, 64: 519-524
[19] Hare E F, Shafrin E G, Zisman W A. J Phys Chem, 1954 58: 236-239
[20] Nishino T, Meguro M, Nakamae K, et al. Langmuir, 1999, 15: 4321-4323
[21] Colburn M E. Step and Flash Imprint Lithogrophy [D]. UT, Austin, 2001:34-36
[22] Chen J K, Ko F H, Hsieh K F, et al. J Vac Sci Technol B, 2004, 22(6): 3233-3241
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[24] Zhao X L, Kopelman R. J Phys Chem, 1996, 100: 11014-11018
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[2]白春礼,纳米科技及其发展前沿,2001,在国际华人纳米科技会上的报告
[3]黄昆,郑厚植等,中国科学院院士建议,2001,4(总84)
[4] Gautier, J. Microelectronic Engineering 1997, 39, 263
[5] Ronald, P.A., Toimas, B., Matt, D., et al Science 1998, 272, 1323
[6] Christoph,W., Hans,K., Siegfried, S. IEEE Trans. On Electron. Devices, 1998, 45, 365
[7] Bumm, L.A., Arnold, J.J., Cygan, M.T. et al Science 1996, 271, 17D5
[8] Maa, C.D, Sun, W.Q., Shen, Z.Y., et al Nature 1999, 397, 144
[9] De Benedett V.M.Cx, Higlia, N.,Sismondi, P., et al Int. J. Biol. Markeris, 2000, 1
[10] Delpech. M. Ann Biol Clin-Paris, 2000, 58, 29
[11]张立德,牟季美,纳米材料与纳米结构,科学出版社2000
[12]白春礼,物理,中国纳米科技研究的现状及思考.物理,2002,3l, 65
[13] Chou S Y, Krauss P R, Renstrom PJ. Applied Physics Letters, 1995, 67, 3114
[14] Michael D. Austin, Stephen Y. Chou, Applied Physics Letters, 2004, 84, 5299
[15] M. Colburn, S. Johnson, M.Stewart, S. Damle, B.J. Jin, T. Bailey, M. Wedlake, T. Michaelson, S.V. Screenivasan, J. Ekerdt, C.G. Willson. Proc. SPIE, 1999,3676, 379
[16] T.K. Widden, D.K. Ferry, M.N.Kozicki, A. Kumar, J. Wilbur, G.M. Witesides. Pattern transfer to silicon by microcontact printing and RIE [J]. 7 447-451, 1996
[17] Zisman W A. Adhension and cohesion [M]. edited by Weiss P. New York: Elsevier, 1962. 183
[18] Shafrin E G, Zisman W A. J Phys Chem, 1960, 64: 519-524
[19] Hare E F, Shafrin E G, Zisman W A. J Phys Chem, 1954 58: 236-239
[20] Nishino T, Meguro M, Nakamae K, et al. Langmuir, 1999, 15: 4321-4323
[21] Colburn M E. Step and Flash Imprint Lithogrophy [D]. UT, Austin, 2001:34-36
[22] Chen J K, Ko F H, Hsieh K F, et al. J Vac Sci Technol B, 2004, 22(6): 3233-3241
[23] Beck M, Graczyk M, Maximov I, et al. Microelectron. Eng., 2002, 61-62: 441-448
[24] Zhao X L, Kopelman R. J Phys Chem, 1996, 100: 11014-11018
[25] Lagrange J D, Markham J L. Langmuir, 1993, 9: 1749-1753
[26] Bailey T, Choi B J, Colburn M, et al. J Vac Sci Technol B, 2000, 18(6):3572-3577
[27] Scheer H C, Schulz H. A. Microelectron. Eng., 2001, 56(3-4): 311-332
[28] Schulz H, Scheer F, Fink M, et al. J Vac Sci Technol B, 2000,18(4): 1861-1865
[29] Heyderman L J, Schift H, David C, et al. Microelectron. Eng., 2000, 54(3-4): 229-245
[30] Scheer H C, Schulz H, Hoffmann T, et al. Academic Press, 2002. 1-60
[31] Lingjie Guo, Peter R. Krauss, and Stephen Y. Chou. Applied Physics Letters, 1997, 71, 1881
[32] Michael D. Austin and Stephen Y. Chou. Nano Lett., 2003, 3, 1687
[33] G. Luo, I. Maximov, D. Adolph, M. Graczyk, P. Carlberg, G.N. Sara, D. Hessman, T. Zhu, Z.F. Liu, H.Q. Xu, L. Montelius. Nano. Techno. 17 1906-1910, 2006.
[34] Haixiong Ge, Wei Wu, Zhiyong Li, et al. Nano Lett., 2005, 5, 179-182
[35] Michele Belotti, Emanuel Roy, Yong Chen. Journal of Applied Physics, 2006, 99, 024309
[36] Sara M. C. Vieira, Kenneth B. K. Teo, and William I. Milne. Applied Physics Letters, 2006, 89, 022111
[37] Mingtao Li, Jian Wang, Lei Zhuang, et al. 2000, 76(6): 673-675
[38] Yueh-Lin Loo, Robert L. Willett, Kirk W. Baldwin, John A. Rogers. Additive, Applied Physics Letters, 2002, 81(3): 562-564
[39] Changsoon Kim, Paul E Burrows, Stephen R Forrest, Science, 2000, 288(5467): 831-833
[40] Michael D. Austin, Stephen Y. Chou, Applied Physics Letters, 2002, 81(23): 4431-4433
[41] Gary M. McClelland, Mark W. Hart, Charles T. Rettner, et al. Applied Physics Letters, 2002, 81(8): 1483-148
[1] Gun-Young Jung, Ezekiel Johnston-Halperin, et al. Nano Lett. 2006, 6, 351-354
[2] Pyung-Soo Lee, Ok-Joo Lee, Sun-Kyu Hwang, et al. Chem. Mater. 2005, 17, 6181-6185
[3] Jing Wan, Zhen Shu, Shao-Ren Deng, Shen-Qi Xie, Bing-Rui Lu, and Ran Liu. J. Vac. Sci. Technol. B. 2009, 27, 19-22
[4] Elisa Mele, Francesca Di Benedetto, Luana Persano, Roberto Cingolani, and Dario Pisignano, Nano Lett. 2005, 5, 1915-1919
[4] Matthias Beinhoff, Anjuli T. Appapillai, Langmuir, 2006, 22, 2411-2414
[5] J. Tallal , M. Gordon, K. Berton, A.L. Charley, D. Peyrade, Microelectronic Engineering, 2006, 83, 851-854
[6] Yi Zhang a, Jian Lu, Satoshi Shimano, Haoshen Zhou, Ryutaro Maeda, Electrochemistry Communications, 2007, 9, 1365-1368
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