掺杂剂对200 mm重掺杂硅片APCVD工艺前表面颗粒的影响
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摘要
在重掺硅衬底片背封过程中,硅片表面颗粒的尺寸和数量将会极大的影响到沉积薄膜的质量,并影响硅片几何特征的形成。主要针对不同掺杂剂的200 mm重掺衬底硅片在进行常压化学气相沉积(atmospheric-pressure chemical vapor deposition, APCVD)生长SiO_2薄膜前的颗粒沾污开展研究。将经过相同清洗及干燥工艺处理的硅片放置于有风机过滤机组(fan filter unit, FFU)存在的百级环境中,利用表面激光扫描方法对硅片表面粒径在0.3～0.5μm范围的颗粒进行测试,分析重掺衬底硅片表面颗粒随存放时间的增长情况。结果表明:在有FFU存在的百级环境中,随存放时间的延长:(1)同种掺杂剂硅片表面颗粒呈增长趋势,且粒径小的颗粒增长幅度较大;(2)不同掺杂剂硅片中,相比于重掺As, Sb的硅片,重掺B硅片表面颗粒的增长速度最快,而其他两种掺杂剂硅片表面颗粒增长速度相对较缓且差别不大。
In the back-seal process of the heavily doped silicon wafers, the size and amount of particles on the surface had a great influence on the quality of the deposited films and the geometry formation of the silicon wafer. The particle contamination of 200 mm heavily doped silicon wafers with different dopants before the SiO_2 film growth under the condition of atmospheric-pressure chemical vapor deposition(APCVD) was studied. After the same cleaning and drying process, the silicon wafers were placed in class 100 environment with a fan filter unit(FFU), and then surface particles with size in rage of 0.3～0.5 μm were tested by surface laser scanning and the effects of storage time on the amounts of surface particles on heavily doped silicon wafers were analyzed. The results showed under class 100 environment where a FFU existed, with the prolonging of storage time:(1) the particles on the surface of silicon wafers with the same dopant showed an increasing trend, particularly the smaller ones increasing more quickly;(2) in the silicon wafers with different dopants, compared to the heavily As doped and the heavily Sb doped silicon wafers, the surface particles on the heavily B doped silicon wafers increased the fastest, while the growth rate of the surface particles of the other two dopants silicon wafers was relatively slow and the difference was not significant.
In the back-seal process of the heavily doped silicon wafers, the size and amount of particles on the surface had a great influence on the quality of the deposited films and the geometry formation of the silicon wafer. The particle contamination of 200 mm heavily doped silicon wafers with different dopants before the SiO_2 film growth under the condition of atmospheric-pressure chemical vapor deposition(APCVD) was studied. After the same cleaning and drying process, the silicon wafers were placed in class 100 environment with a fan filter unit(FFU), and then surface particles with size in rage of 0.3～0.5 μm were tested by surface laser scanning and the effects of storage time on the amounts of surface particles on heavily doped silicon wafers were analyzed. The results showed under class 100 environment where a FFU existed, with the prolonging of storage time:(1) the particles on the surface of silicon wafers with the same dopant showed an increasing trend, particularly the smaller ones increasing more quickly;(2) in the silicon wafers with different dopants, compared to the heavily As doped and the heavily Sb doped silicon wafers, the surface particles on the heavily B doped silicon wafers increased the fastest, while the growth rate of the surface particles of the other two dopants silicon wafers was relatively slow and the difference was not significant.
引文
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[17] Liu Y H,Wang G L,Yan Z R.Silicon wafer cleaning and new development [J].Journal of the Chinese Rare Earth Society,2003,(S1):144.(刘红艳,万关良,闫志瑞.硅片清洗及最新发展 [J].中国稀土学报,2003,(S1):144.)
[2] Zhong G H,Ning Y D,Wang X,Lu Y C,Zhou Q G,Li Y D.Influence of etching process on site flatness of as-polished wafers [J].Chinese Journal of Rare Metals,2017,41(6):108.(钟耕杭,宁永铎,王新,路一辰,周旗钢,李耀东.化学腐蚀对半导体硅片抛光后局部平整度的影响 [J].稀有金属,2017,41(6):108.)
[3] Liu Y L,Sang J X,Ye Z J.Analysis and researching of effect of surfactants on adsorbate particulate on Si wafers [J].Semiconductor Technology,2001,26(7):59.(刘玉岭,桑建新,叶占江.表面活性剂对硅单晶片表面吸附颗粒的作用 [J].半导体技术,2001,26(7):59.)
[4] Gao D,Tong L Y.Study on problem of LPCVD back-seal silicon wafer surface particle [J].Electronics Process Technology,2014,35(3):170.(高丹,佟丽英.LPCVD背封片表面颗粒问题研究 [J].电子工艺技术,2014,35(3):170.)
[5] Zhang J G.Particle contamination,the disruption of electronic connectors in the signal transmission system [J].浙江大学学报A(英文版),2007,8(3):361.
[6] Kinetic study of SiO2/S coating deposition by APCVD [J].Journal of Materials Science & Technology,2007,(4):535.
[7] Li L M,Han P D,Ja Y H,Luo C L.Study on defect control of silicon wafer wet cleaning process [J].Semiconductor Optoelectronics,2015,36(6):933.(李利民,韩沛东,贾远红,罗春林.硅片湿法清洗工艺缺陷控制研究 [J].半导体光电,2015,36(6):933.)
[8] Kern W.Handbook of Semiconductor Wafer Cleaning Technology [M].New Jersey:Noyes Publication,1993.28.
[9] Liu D L,Feng Q L,Zhou Q G,He Z Q,Chang L,Yan Z R.Particle defects on epitaxial surface with 300 mm Si substrates [J].Chinese Journal of Rare Metals,2012,36(3):446.(刘大力,冯泉林,周旗钢,何自强,常麟,闫志瑞.300 mmSi外延片表面颗粒缺陷的研究 [J].稀有金属,2012,36(3):446.)
[10] Zheng W Y,Liu Y L,Wang C W,Wang M,Rong X X,Wang H X,Tian Q W.Role of nano SiO2 abracsive in alkaline slurry during Cu CMP [J].Institute of Microelectronics,2013,(1):52.(郑伟艳,刘玉岭,王辰伟,王萌,戎向向,王海霞,田巧伟.碱性抛光液中纳米SiO2磨料在Cu CMP中的作用 [J].微纳电子技术,2013,(1):52.)
[11] Fan Zhang,Ahmed A.Busnaina,Michael A Fury,Wang S Q.The removal of deformed particles from silicon wafer [J].J.Electron Mater.,2000,23(2):207.
[12] Feng K,Shi X D,Li G,Xu F,Liu P D.Comparison of spinning spray and megasonics cleaning method [J].Chinese Journal of Semiconductor,2005,26(2):401.(凤坤,史迅达,李刚,许峰,刘培东.兆声清洗法和离心喷射清洗法的比较 [J].半导体学报,2005,26(2):410.)
[13] Shimura F.Semiconductor Silicon Crystal Technology [M].Academic Press,Inc:159.
[14] Chen Q M,Cui Q,Cai Y Q,Zhang B,Ma J,Zhang H.Effects of lattice miamatch and oxygen annealing on electrical properties of La0.825Ca0.175MnO3 thin films [J].Journal of Synthetic Crystals,2014,43(11):2874.(陈清明,崔琦,蔡云麒,张斌,马吉,张辉.晶格失配和退火氧压对La0.825Ca0.175MnO3薄膜的电学性能的影响 [J].人工晶体学报,2014,43(11):2874.)
[15] Dodge M R,Shadman F.Computer modeling of surface interactions and contaminant transport in microstructures during the rinsing of patterned semiconductor wafers [J].Computers and Chemical Engineering,2014,68:182.
[16] Qin K D,Li Y C.Mechanisms of particle removal from silicon wafer surface in wet chemical cleaning process [J].Journal of Colloid and Interface Science,2003,261:569.
[17] Liu Y H,Wang G L,Yan Z R.Silicon wafer cleaning and new development [J].Journal of the Chinese Rare Earth Society,2003,(S1):144.(刘红艳,万关良,闫志瑞.硅片清洗及最新发展 [J].中国稀土学报,2003,(S1):144.)
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