硅基光电子器件的辐射效应研究进展
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摘要
硅基光电子器件与芯片技术是通信领域的下一代关键技术,在光通信、高性能计算、数据中心等领域有广阔的市场,在生物传感领域也有广泛应用.根据硅光器件高集成度、重量小等特性,可以预见硅基光电子芯片在空间通信、核电站、高能粒子实验等辐射环境中也极具应用前景.本文综述了硅基光电子器件在高能粒子环境下的辐射效应研究工作,阐述了电离和非电离辐射效应;针对无源器件和有源器件分别介绍了辐射效应和响应机理,包括波导、环形谐振器、调制器、探测器、激光器、光纤等.高能辐射对无源器件的影响主要包括结构加速氧化、晶格缺陷、非晶结构致密化等.对于光电探测器和激光器,辐射引起的位移损伤占主导地位,其中点缺陷引入的深能级会影响载流子响应导致器件性能变化,而电光调制器在辐射环境下的主要损伤机制是电离损伤,产生的缺陷电荷会影响载流子浓度从而改变有效折射率.本文最后展望了硅基光电集成器件的辐射加固思路和在空间环境中的应用前景.
Silicon photonics is a fundamental technology, which has great potential applications in optical interconnection for telecom, datacom, and high performance computers, as well as in bio-photonics. Currently considered are the photonics integrated circuits that are able to work in harsh environments such as high energy equipment and future space systems including satellites, space stations and spacecraft. The understanding of the radiation effects of the photonics devices is critical for fabricating radiation hardened photonic integrate chips and maintaining the performance of the devices and the systems. In this paper, the recent progress of the radiation effects of silicon photonic components is summarized. The effects of the high energy particles that possibly degrade the performance of the device are explained, and the response of the passive and active device under radiation are reviewed comprehensively, including waveguides, ring resonators, modulators, detectors,lasers and optical fibers and so on. For passive devices, radiation-induced effects include accelerated-oxidation of the structures, radiation-generated lattice defects, and amorphous densification or compaction in the optical materials. The effective refractive index of the passive device may change consequently, leading the working frequency to shift, the optical confinement to decrease, and the optical power to leak, which accounts for the extra loss or other performance degradation behaviors. For photodetectors and lasers, radiation-induced displacement damage will be dominant. The induced point defects localized in the silicon layer bring about deep level in the forbidden band, acting as generation-recombination centers or trap centers of tunneling effect, which will compensate for either donor or acceptor levels, degrading the response of these optoelectronic device significantly. The plasma dispersion effect is the mainstream approach to building the silicon electro-optic modulators, which will suffer ionization damage in the high energy particle environment, because the interfacetrapped hole caused by ionizing radiation reduces the carrier concentration in the depletion region and even induces the pinch-off of the p-doped side of the modulator, which may result in device failure. To improve the radiation hardness of the silicon photonic device, the passivation of the surface, optimization of the waveguide shape, and the choice of appropriate thickness of the buried oxide layer are possible solutions, and more effective approaches are still to be developed.
Silicon photonics is a fundamental technology, which has great potential applications in optical interconnection for telecom, datacom, and high performance computers, as well as in bio-photonics. Currently considered are the photonics integrated circuits that are able to work in harsh environments such as high energy equipment and future space systems including satellites, space stations and spacecraft. The understanding of the radiation effects of the photonics devices is critical for fabricating radiation hardened photonic integrate chips and maintaining the performance of the devices and the systems. In this paper, the recent progress of the radiation effects of silicon photonic components is summarized. The effects of the high energy particles that possibly degrade the performance of the device are explained, and the response of the passive and active device under radiation are reviewed comprehensively, including waveguides, ring resonators, modulators, detectors,lasers and optical fibers and so on. For passive devices, radiation-induced effects include accelerated-oxidation of the structures, radiation-generated lattice defects, and amorphous densification or compaction in the optical materials. The effective refractive index of the passive device may change consequently, leading the working frequency to shift, the optical confinement to decrease, and the optical power to leak, which accounts for the extra loss or other performance degradation behaviors. For photodetectors and lasers, radiation-induced displacement damage will be dominant. The induced point defects localized in the silicon layer bring about deep level in the forbidden band, acting as generation-recombination centers or trap centers of tunneling effect, which will compensate for either donor or acceptor levels, degrading the response of these optoelectronic device significantly. The plasma dispersion effect is the mainstream approach to building the silicon electro-optic modulators, which will suffer ionization damage in the high energy particle environment, because the interfacetrapped hole caused by ionizing radiation reduces the carrier concentration in the depletion region and even induces the pinch-off of the p-doped side of the modulator, which may result in device failure. To improve the radiation hardness of the silicon photonic device, the passivation of the surface, optimization of the waveguide shape, and the choice of appropriate thickness of the buried oxide layer are possible solutions, and more effective approaches are still to be developed.
引文
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