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在“Elsevier”中，命中：1,168条，耗时：0.1439598 秒

1.The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In-Zn-O thin film transistors

作者：Sunghwan Lee ; Hongsik Park ; David C. Paine ; ^{David_Paine@brown.edu}

关键词：Indium Zinc oxide ; Thin Film Transistor ; Amorphous oxide semiconductors ; Contact resistance ; Field effect mobility

刊名：Thin Solid Films

出版年：2012

2.Novel carbon nanotube field effect transistor with graded double halo channel

作者：Ali Naderi ; ^{alinaderi_ac@yahoo.com} ; Parviz Keshavarzi ^{pkeshavarzi@semnan.ac.ir}

关键词：Carbon nanotube field effect transistor (CNTFET) ; Nonequilibrium Green&rsquo ; s function (NEGF) ; Graded double halo (GDH) ; Short channel effects ; Delay ; Power delay product (PDP) ; On/off current ratio

刊名：Superlattices and Microstructures

出版年：2012

3.Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics

作者：Seongjae Cho^a ; In Man Kang^b ; ^{imkang@ee.knu.ac.kr}

关键词：Silicon nanowire (SNW) ; Tunneling field-effect transistor (TFET) ; PNPN multi-junction ; Radio frequency (RF) ; Design optimization

刊名：Current Applied Physics

出版年：2012

4.Organic field-effect transistors based on semiconducting porphyrin single crystals

作者：Mai Ha Hoang^a ; ^b ; Dong Hoon Choi^a ; ; Suk Joong Lee^a ; ^{slee1@korea.ac.kr}

关键词：Field-effect transistors ; Porphyrins ; Single crystals ; Thin films ; Semiconductors

刊名：Synthetic Metals

出版年：2012

5.Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistors

作者：Yasin Kanbur^a ; ^b ; Mihai Irimia-Vladu^c ; ^b ; ^{Mihai.Irimia-Vladu@jku.at} ; Eric D. G艂owacki^b ; Gundula Voss^d ; Melanie Baumgartner^c ; Gü ; nther Schwabegger^e ; Lucia Leonat^f ; Mujeeb Ullah^e ; Hizir Sarica^g ; Sule Erten-Ela^g ; Reinhard Schwö ; diauer^c ; Helmut Sitter^e ; Zuhal Kü ; ç ; ü ; kyavuz^a ; Siegfried Bauer^c ; Niyazi Serdar Sariciftci^b

关键词：Dielectric polymer ; Vacuum processed polymer ; Evaporable polyethylene ; Low-operating voltage field effect transistors

刊名：Organic Electronics

出版年：2012

6.Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors

作者：Masashi Akabori ; ^{akabori@jaist.ac.jp} ; Tatsuya Murakami ; Syoji Yamada

关键词：A1. Nanostructures ; A3. Molecular beam epitaxy ; A3. Selective epitaxy ; B2. Semiconducting III&ndash ; V materials ; B3. Field effect transistors

刊名：Journal of Crystal Growth

出版年：2012

7.Phospholipid film in electrolyte-gated organic field-effect transistors

作者：Serafina Cotrone^a ; Marianna Ambrico^b ; Henrik Toss^c ; M. Daniela Angione^a ; Maria Magliulo^a ; Antonia Mallardi^d ; Magnus Berggren^c ; Gerardo Palazzo^a ; Gilles Horowitz^e ; Teresa Ligonzo^f ; ^{ligonzo@ba.infn.it} ; Luisa Torsi^a ; ^{torsi@chimica.uniba.it}

关键词：Electrolyte-gated field-effect transistors ; Phospholipid layers ; Poly-3-hexyl-thiophene (P3HT) ; Electrochemical impedance spectroscopy

刊名：Organic Electronics

出版年：2012

8.Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye

作者：J.C. Ribierre^a ; ^b ; ^{jcribierre@ewha.ac.kr} ; M. Sato^c ; A. Ishizuka^a ; ^c ; T. Tanaka^d ; S. Watanabe^e ; M. Matsumoto^e ; S. Matsumoto^c ; ¹ ; ^{smatsu@edhs.ynu.ac.jp} ; M. Uchiyama^a ; T. Aoyama^a ; ² ; ^{taoyama@riken.jp}

关键词：Organic field-effect transistor ; Bisazomethine dye ; J-aggregates ; Thickness dependence

刊名：Organic Electronics

出版年：2012

9.A model for the electrical characteristics of metal-ferroelectric-insulator-semiconductor field-effect transistor

作者：Jing Sun^a ; Xue Jun Zheng^a ; ^b ; ^{zhengxuejun@xtu.edu.cn} ; Wen Li^a

关键词：Metal-ferroelectric-insulator-semiconductor field-effect transistor ; Modeling ; Capacitance&ndash ; voltage characteristics ; Current&ndash ; voltage characteristics

刊名：Current Applied Physics

出版年：2012

10.Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors

作者：Ji Cao ; ^{ji.cao@epfl.ch} ; Adrian M. Ionescu

关键词：Carbon nanotubes ; Field-effect transistors ; Schottky barrier ; Dual lateral gates ; Self-aligned

刊名：Solid-State Electronics

出版年：2012

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