Cu₂ZnSnS₄ photovoltaic cell with improved efficiency fabricated by high-temperature annealing after CdS buffer-layer deposition

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• 作者：Shin Tajima ; Mitsutaro Umehara ; Masaki Hasegawa ; Takahiro Mise and Tadayoshi Itoh
• 刊名：Progress in Photovoltaics: Research and Applications
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：25
• 期：1
• 页码：14-22
• 全文大小：1145K
• ISSN：1099-159X

文摘

To improve the photovoltaic properties of Cu₂ZnSnS₄ (CZTS) cells, we investigated the effect of both the thickness of the deposited CdS layers and the post-annealing temperature following CdS deposition on the photovoltaic properties of CZTS cells using a two-layer CZTS structure. By depositing a thin CdS layer (40 nm) followed by high temperature annealing (603 K), we observed a remarkable increase in the short-circuit current density because of the enhancement of the external quantum efficiency in the wavelength range of 400–800 nm. The best CZTS cell exhibited a conversion efficiency of 9.4% in the active area (9.1% in the designated area). In addition, we also fabricated a CZTS cell with open-circuit voltage of 0.80 V by appropriately tuning the composition of the CZTS layers. Copyright