Giant Rashba Splitting in Pb<sub>1-sub><sub>xsub>Sn<sub>xsub>Te (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk
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- 作者：Valentine V. Volobuev ; Partha S. Mandal ; Marta Galicka ; Ondřej Caha ; Jaime Sá ; nchez-Barriga ; Domenico Di Sante ; Andrei Varykhalov ; Amir Khiar ; Silvia Picozzi ; Gü ; nther Bauer ; Perla Kacman ; Ryszard Buczko ; Oliver Rader and Gunther Springholz
- 刊名：Advanced Materials
- 出版年：2017
- 出版时间：January 18, 2017
- 年：2017
- 卷：29
- 期：3
- 全文大小：5484K
- ISSN：1521-4095
文摘
The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb<sub>1-sub><sub>xsub>Sn<sub>xsub>Te (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.