Novel LTPS technology for large substrate

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• 作者：Nobutake Nodera ; Satoru Utsugi ; Shigeru Ishida ; Ryohei Takakura ; Yoshiaki Matsushima ; Satoshi Michinaka ; Takao Matsumoto ; Kazuki Kobayashi and Taimi Oketani
• 刊名：Journal of the Society for Information Display
• 出版年：2016
• 出版时间：June 2016
• 年：2016
• 卷：24
• 期：6
• 页码：394-401
• 全文大小：796K
• ISSN：1938-3657

文摘

We developed partial laser anneal silicon (PLAS) thin-film transistor (TFT) of novel low-temperature polycrystalline-silicon (LTPS) technology, which had the mobility of 28.1 cm²/Vs lager than that of mass produced oxide TFT and photo-stability comparable with that of LTPS TFT in bottom gate structure. This innovative technology enables the conversion from an α-Si TFT to a high-mobility TFT most easily and inexpensively. Moreover, there is no limit of substrate size, such as Gen10 and more. Photo-stability of PLAS will be suitable to organic light-emitting diode backplane, high-dynamic range TV, and outdoor IDP.