Synthesis of Silicon Carbide Nanocrystals Using Waste Poly(vinyl butyral) Sheet

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• 作者：Sung-Woo Park ; Jae-Chan Kim ; Byung-Kook Kim and Dong-Wan Kim
• 刊名：Journal of the American Ceramic Society
• 出版年：2016
• 出版时间：June 2016
• 年：2016
• 卷：99
• 期：6
• 页码：1885-1888
• 全文大小：1159K
• ISSN：1551-2916

文摘

SiC nanocrystals were prepared using waste poly(vinyl butyral) sheet as a carbon source. SiO₂/poly(vinyl butyral) mixtures are converted to SiO₂/pyrolytic carbon composites via pyrolysis at low temperatures (500°C) in an Ar atmosphere. Subsequently, low-temperature magnesiothermic reduction and purification processes result in the formation of tiny SiC nanocrystals. The size of the synthesized SiC nanocrystals ranged from 3 to 12 nm, i.e., they are smaller than the SiO₂ precursor offering large specific surface area of 175.76 m²/g and are single phase as 3C–SiC. Hence, 3C–SiC nanocrystals were successfully synthesized using waste poly(vinyl butyral) through this simple, inexpensive, and scalable process, which will be a new application in the recycling industry.