Solution-processed high-k oxide dielectric via deep ultraviolet and rapid thermal annealing for high-performance MoS<sub>2sub> FETs
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- 作者：Geonwook Yoo ; Sol Lea Choi ; Byungwook Yoo and Min Suk Oh
- 刊名：physica status solidi (a)
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：214
- 期：1
- 全文大小：1278K
- ISSN：1862-6319
文摘
So far most of MoS<sub>2sub>-based devices have been demonstrated on oxide gate dielectrics (e.g., SiO<sub>2sub>, Al<sub>2sub>O<sub>3sub>, HfO<sub>2sub>, etc) deposited by vacuum process or on polymer gate dielectrics. In this study, we report electrical characteristics of multilayer MoS<sub>2sub> transistors fabricated on solution-processed high-k AlO<sub>xsub> gate dielectric via deep ultraviolet (DUV) activation in combination with rapid thermal annealing process at 250 °C. The solution-processed AlO<sub>xsub> sol–gel film exhibited low leakage current of about 1.49 μA cm<sup>−2sup> at 1 MV cm<sup>−1sup> and a relative dielectric constant (k) of ∼6.1 at 1 kHz. The fabricated MoS<sub>2sub>-FETs exhibit median field-effect mobility of ∼23.3 cm<sup>2sup> V<sup>−1sup>s<sup>−1sup>, threshold voltage of ∼ 0.79 V, subthreshold slope of ∼0.30 V dec<sup>−1sup>, and on/off current ratio of ∼10<sup>7sup>. The electrical performance can be further improved by optimizing the AlO<sub>xsub> sol–gel film as well as the device structure, and the result implies that the solution-processed high-k AlO<sub>xsub> is promising for TMDC–based device applications.