文摘
In order to improve hole collection at the interface anode/electron donor in organic photovoltaic cells, it is necessary to insert a hole-transporting layer. CuI was shown to be a very efficient hole-transporting layer. However, its tendency to be quite rough tends to induce leakage currents and it is necessary to use a very slow deposition rate for CuI to avoid such negative effect. Herein, we show that the co-deposition of MoO3 and CuI avoids this difficulty and allows deposition of a homogeneous efficient hole-collecting layer at an acceptable deposition rate. Via an XPS study, we show that blending MoO3:CuI improves the hole collection efficiency through an increase of the gap state density. This increase is due to the formation of Mo5+ following interaction between MoO3 and CuI. Not only does the co-evaporation process allow for decreasing significantly the deposition time of the hole-transporting layer, but also it increases the efficiency of the device based on the planar heterojunction, CuPc/C60.