C-axis transport of pnictide superconductors
详细信息    查看全文
文摘
The generic structure of most high T<sub>csub> superconductors is a stacking sequence of superconducting planes separated by so-called charge reservoir layers. It is well known that carrier doping of these materials is achieved either by substitution of atoms or by nonstoichiometry in the charge reservoir layer. The alternating type of stacking causes yet another two important consequences. First, the transport anisotropy of these materials can be so high, that in the superconducting state the c-axis transport is governed by the intrinsic Josephson effect. Whereas the anisotropy of our investigated LaO<sub>1&ndash;xsub>F<sub>xsub>FeAs samples was not sufficient, optimum-doped Ca<sub>10sub>(FeAs)<sub>10sub>Pt<sub>4sub>As<sub>8sub> showed hysteretic c-axis current&ndash;voltage characteristics. Together with the Ambegaokar&ndash;Baratoff like temperature dependence of the critical current, this is a strong indication of intrinsic Josephson effects. Second, it is possible to deposit in the charge reservoir layers a substantial amount of charge only by injecting large c-axis currents. By charge compensation, this decreases the concentration of mobile electrons in the conducting layers of electron-doped materials. We were able to verify this in all details by c-axis transport measurements of LaO<sub>1&minus;xsub>F<sub>xsub>FeAs single crystals and pure and Pt doped (CaFe<sub>1&ndash;xsub>Pt<sub>xsub>As)<sub>10sub>Pt<sub>4sub>As<sub>8sub> single crystals. After current injection, we observed a decrease of T<sub>csub> for doping levels at or below the T<sub>csub> maximum, and a T<sub>csub> increase for doping levels beyond the maximum. In all cases, the resistivity of the samples increased significantly. In both material classes, heavily overdoped samples showed a spectacular T<sub>csub> increase by more than 10&thinsp;K only accomplished by carrier injection.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700