A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV
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- 作者：Shizhao Fan ; Ishiang Shih and Zetian Mi
- 刊名：Advanced Energy Materials
- 出版年：2017
- 出版时间：January 25, 2017
- 年：2017
- 卷：7
- 期：2
- 全文大小：1252K
- ISSN：1614-6840
文摘
Indium gallium nitride (InGaN) nanowire arrays (Eg ≈1.75 eV) are monolithically integrated on a Si solar cell through a Si tunnel junction. With such a nearly ideal energy bandgap configuration, a saturated photocurrent density of 16.3 mA cm−2 is achieved under AM1.5G one sun illumination. The applied-bias-photon-to-current efficiency reaches 8.3% at 0.5 V versus normal hydrogen electrode.