Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate
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- 作者：Fangfang Cui ; Cong Wang ; Xiaobo Li ; Gang Wang ; Kaiqiang Liu ; Zhou Yang ; Qingliang Feng ; Xing Liang ; Zhongyue Zhang ; Shengzhong Liu ; Zhibin Lei ; Zonghuai Liu ; Hua Xu and Jin Zhang
- 刊名：Advanced Materials
- 出版年：2016
- 出版时间：July 6, 2016
- 年：2016
- 卷：28
- 期：25
- 页码：5019-5024
- 全文大小：1549K
- ISSN：1521-4095
文摘
Anisotropic 2D layered material rhenium disulfide (ReS2) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 °C) and sulfur precursors in the temperature range of 460–900 °C with high efficiency.