Trapping behavior of GaN HEMTs and its implications on class B PA bias point selection
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- 作者：Pedro M. Cabral ; Luis C. Nunes ; Tiago Ressurreiç ; ã ; o and José ; C. Pedro
- 刊名：International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
- 出版年：2017
- 出版时间：January/February 2017
- 年：2017
- 卷：30
- 期：1
- 全文大小：949K
- ISSN：1099-1204
文摘
Gallium nitride high electron mobility transistors (GaN HEMTs) have been accused of suffering from soft-compression, a recognized form of nonlinearity. Recently published works showed that this phenomenon – explained with the devices' charge-trapping effects – is only observed under CW operation, which has little in common with generally used communication signals. In real operation, those effects (modeled as a self-biasing phenomenon visible as a threshold voltage variation) are also observable, but in an apparently different way. Several nonlinear models already take into account this variation and, more recently, the authors presented an extraction methodology for such complicated systems. Based on that information, this paper presents the trapping behavior of GaN HEMTs and a physically based way of adjusting the quiescent point of a desired class B GaN HEMT-based PA, designed to operate under dynamically varying signals. Copyright