Bismuth Interfacial Doping of Organic Small Molecules for High Performance n-type Thermoelectric Materials

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• 作者：Dazhen Huang ; Dr. Chao Wang ; Dr. Ye Zou ; Xingxing Shen ; Yaping Zang ; Hongguang Shen ; Prof. Xike Gao ; Prof. Yuanping Yi ; Prof. Wei Xu ; Dr. Chong-an Di and Prof. Daoben Zhu
• 刊名：Angewandte Chemie
• 出版年：2016
• 出版时间：August 26, 2016
• 年：2016
• 卷：128
• 期：36
• 页码：10830-10833
• 全文大小：2034K
• ISSN：1521-3757

文摘

Development of chemically doped high performance n-type organic thermoelectric (TE) materials is of vital importance for flexible power generating applications. For the first time, bismuth (Bi) n-type chemical doping of organic semiconductors is described, enabling high performance TE materials. The Bi interfacial doping of thiophene-diketopyrrolopyrrole-based quinoidal (TDPPQ) molecules endows the film with a balanced electrical conductivity of 3.3 S cm⁻¹ and a Seebeck coefficient of 585 μV K⁻¹. The newly developed TE material possesses a maximum power factor of 113 μW m⁻¹ K⁻², which is at the forefront for organic small molecule-based n-type TE materials. These studies reveal that fine-tuning of the heavy metal doping of organic semiconductors opens up a new strategy for exploring high performance organic TE materials.