Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes
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- 作者：Anastasia Holovchenko ; Julien Dugay ; Mó ; nica Gimé ; nez-Marqué ; s ; Ramó ; n Torres-Cavanillas ; Eugenio Coronado and Herre S. J. van der Zant
- 刊名：Advanced Materials
- 出版年：2016
- 出版时间：September 7, 2016
- 年：2016
- 卷：28
- 期：33
- 页码：7228-7233
- 全文大小：1840K
- ISSN：1521-4095
文摘
The charge transport properties of SCO [Fe(Htrz)2(trz)](BF4) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.