Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

详细信息    查看全文

• 作者：Jaewoo Shim ; Hyo Seok Kim ; Yoon Su Shim ; Dong-Ho Kang ; Hyung-Youl Park ; Jaehyeong Lee ; Jaeho Jeon ; Seong Jun Jung ; Young Jae Song ; Woo-Shik Jung ; Jaeho Lee ; Seongjun Park ; Jeehwan Kim ; Sungjoo Lee ; Yong-Hoon Kim and Jin-Hong Park
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：July 13, 2016
• 年：2016
• 卷：28
• 期：26
• 页码：5293-5299
• 全文大小：3668K
• ISSN：1521-4095

文摘

A WSe₂-based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 × 10⁷ at 180 K (3 × 10⁴ at room temperature). These features originate from a trap-assisted tunneling process involving WSe₂ defect states aligned near the graphene Dirac point.